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21. 发明授权

US07435641B2 Low leakage MIM capacitor 有权
公开(公告)号：US07435641B2
公开(公告)日：2008-10-14
申请号：US11932677
申请日：2007-10-31
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/8242
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

22. 发明授权

US07378719B2 Low leakage MIM capacitor 有权
标题翻译：低泄漏MIM电容
公开(公告)号：US07378719B2
公开(公告)日：2008-05-27
申请号：US09745114
申请日：2000-12-20
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L29/00
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
摘要翻译：用于集成电路的电容器结构及其制造方法。电容器结构包括底电极，顶电极和置于底电极和顶电极之间的电介质层。电容器结构还包括置于电介质层和底电极和顶电极中的至少一个之间的金属氧化物缓冲层。每个金属氧化物缓冲层起着改善电容和减少电容器泄漏的作用。这些电容器适用于作为存储单元和并入这种存储单元的装置以及其他集成电路。

23. 发明授权

US07368343B2 Low leakage MIM capacitor 有权
公开(公告)号：US07368343B2
公开(公告)日：2008-05-06
申请号：US10215462
申请日：2002-08-09
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： H01L21/8234
CPC分类号： H01L27/10805 , G11C11/404 , G11C2211/4016 , H01L21/76895 , H01L27/10852 , H01L28/56 , H01L28/91 , Y10S257/906 , Y10S438/957
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

24. 发明申请

US20060165894A1 Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layer 有权
公开(公告)号：US20060165894A1
公开(公告)日：2006-07-27
申请号：US11389707
申请日：2006-03-27
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： C23C16/00
CPC分类号： H01L29/495 , C23C16/40 , C23C16/56 , H01L21/28556 , H01L27/108 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L28/65 , H01L28/90
摘要： A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.

25. 发明授权

US07018675B2 Method for forming a ruthenium metal layer 失效
公开(公告)号：US07018675B2
公开(公告)日：2006-03-28
申请号：US10658868
申请日：2003-09-08
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： C23C16/06 , C23C16/40
CPC分类号： H01L29/495 , C23C16/40 , C23C16/56 , H01L21/28556 , H01L27/108 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L28/65 , H01L28/90
摘要： A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.

26. 发明申请

US20060014863A1 Flame retardant thermoplastic resin composition 有权
标题翻译：阻燃热塑性树脂组合物
公开(公告)号：US20060014863A1
公开(公告)日：2006-01-19
申请号：US10520571
申请日：2002-09-30
申请人： Jong Cheol Lim , Sam Yang
发明人： Jong Cheol Lim , Sam Yang
IPC分类号： C08K5/49
CPC分类号： C08K5/523 , C08L27/12 , C08L51/04 , C08L69/00 , C08L2666/02
摘要： The flame retardant thermoplastic resin composition of the present invention comprises (A) 45˜95 parts by weight of a thermoplastic polycarbonate resin; (B) 1˜50 parts by weight of a vinyl graft copolymer; (C) 0˜50 parts by weight of a vinyl copolymer or a mixture of vinyl copolymers; (D) 1˜30 parts by weight of a mixture of organic phosphorous compounds consisting of (D-1) 5˜95 parts by weight of a monomeric phosphoric acid ester compound or a mixture of monomeric phosphoric acid ester compounds and (D-2) 95˜5 parts by weight of an oligomeric phosphoric acid ester compound or a mixture of oligomeric phosphoric acid ester compounds, per 100 parts by weight of the sum of (A), (B) and (C); and (E) 0.05˜5 parts by weight of a fluorinated polyolefin resin per 100 parts by weight of the sum of (A), (B) and (C).
摘要翻译：本发明的阻燃热塑性树脂组合物包含（A）45〜95重量份的热塑性聚碳酸酯树脂; （B）1〜50重量份的乙烯基接枝共聚物; （C）0〜50重量份的乙烯基共聚物或乙烯基共聚物的混合物; （D）1〜30重量份由（D-1）5-95重量份单体磷酸酯化合物或单体磷酸酯化合物和（D-2）的混合物组成的有机磷化合物的混合物）95〜5重量份低聚磷酸酯化合物或低聚磷酸酯化合物的混合物，相对于（A），（B）和（C）的总和为100重量份。和（E）每100重量份（A），（B）和（C）的总和为0.05〜5重量份的氟化聚烯烃树脂。

27. 发明授权

US06631069B2 Metal oxynitride capacitor barrier layer 有权
公开(公告)号：US06631069B2
公开(公告)日：2003-10-07
申请号：US09997876
申请日：2001-11-30
申请人： Sam Yang , Vishnu K. Agarwal
发明人： Sam Yang , Vishnu K. Agarwal
IPC分类号： H01G4228
CPC分类号： H01L28/56 , H01L27/10852 , H01L28/75
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

28. 发明授权

US06524912B1 Planarization of metal container structures 失效
标题翻译：金属容器结构的平面化
公开(公告)号：US06524912B1
公开(公告)日：2003-02-25
申请号：US09653280
申请日：2000-08-31
申请人： Sam Yang , John M. Drynan
发明人： Sam Yang , John M. Drynan
IPC分类号： H01L218242
CPC分类号： H01L21/76843 , H01L21/3212 , H01L21/7684 , H01L27/10852 , H01L27/10855 , H01L28/90 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.
摘要翻译：导电材料设置在形成于绝缘材料的开口中。该方法包括首先在该开口的至少一部分上方和在该开口外部的至少一部分绝缘材料上形成导电材料。接下来，在开口内部的导电材料的至少一部分上形成含金属填充材料，并且还在开口外部的绝缘材料上方。含金属的材料至少部分地填充开口。然后除去开口内部的含金属填充材料和导电材料的至少一部分。此后，除去开口内部的含金属填充材料的至少一部分。

29. 发明授权

US06417537B1 Metal oxynitride capacitor barrier layer 有权
公开(公告)号：US06417537B1
公开(公告)日：2002-07-09
申请号：US09484815
申请日：2000-01-18
申请人： Sam Yang , Vishnu K. Agarwal
发明人： Sam Yang , Vishnu K. Agarwal
IPC分类号： H01L27108
CPC分类号： H01L28/56 , H01L27/10852 , H01L28/75
摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

30. 发明授权

US08808052B2 Interactive electronic toy 有权
标题翻译：互动电子玩具
公开(公告)号：US08808052B2
公开(公告)日：2014-08-19
申请号：US13416562
申请日：2012-03-09
申请人： Sam Yang
发明人： Sam Yang
IPC分类号： A63H30/00
CPC分类号： A63H3/28 , A63H33/00 , A63H2200/00
摘要： An interactive electronic toy includes a body, a sensor module, a data storage module, an output module and a processing unit. The sensor module generates sensing signals when the body is being operated. The data storage module has stored therein standard status parameters each having an accurate response signal. The processing unit runs an operation mode subject to the steps of: receiving the sensing signals and processing the sensing signal into an actual parameter, receiving the standard status parameters, matching the actual parameters with the standard status parameters, and outputting to the output module the accurate response signal of the standard status parameter that matches the actual parameter.
摘要翻译：交互式电子玩具包括主体，传感器模块，数据存储模块，输出模块和处理单元。当身体运转时，传感器模块产生感应信号。数据存储模块已经存储了各自具有精确响应信号的标准状态参数。处理单元运行操作模式，其步骤为：接收感测信号并将感测信号处理成实际参数，接收标准状态参数，使实际参数与标准状态参数匹配，并将输出模块输出到输出模块与实际参数匹配的标准状态参数的准确响应信号。

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