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21. 发明授权

US06352918B1 Method of forming inter-metal interconnection 有权
标题翻译：形成金属间互连的方法
公开(公告)号：US06352918B1
公开(公告)日：2002-03-05
申请号：US09199877
申请日：1998-11-24
申请人： Yimin Huang , Chih-Chien Liu , Tri-Rung Yew
发明人： Yimin Huang , Chih-Chien Liu , Tri-Rung Yew
IPC分类号： H01L21311
CPC分类号： H01L21/76802
摘要： A method of forming an inter-metal interconnection is provided. A substrate is provided. A dielectric layer with a metal plug therein is formed on the substrate. An IMD layer is formed on the dielectric layer. An insulating layer and a PE-oxide layer are formed on the IMD layer. A photolithography and etching process is performed to form a trench in the IMD layer and to expose the metal plug in the dielectric layer. A metal is filled into the trench to electrically connect to the metal plug.
摘要翻译：提供了形成金属间互连的方法。提供基板。在基板上形成有金属塞的电介质层。在电介质层上形成IMD层。在IMD层上形成绝缘层和PE-氧化物层。进行光刻和蚀刻工艺以在IMD层中形成沟槽并露出介电层中的金属插塞。将金属填充到沟槽中以电连接到金属插头。

22. 发明授权

US06339025B1 Method of fabricating a copper capping layer 有权
标题翻译：铜覆盖层的制造方法
公开(公告)号：US06339025B1
公开(公告)日：2002-01-15
申请号：US09304436
申请日：1999-04-03
申请人： Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
发明人： Chih-Chien Liu , Kun-Chih Wang , Wen-Yi Hsieh , Yimin Huang
IPC分类号： H01L2144
CPC分类号： H01L21/76886 , H01L21/3185 , H01L21/76807 , H01L21/76834 , H01L21/76849 , H01L21/76867
摘要： A method of fabricating a copper capping layer. A silicon rich nitride layer is formed on an exposed copper layer. Since the silicon rich nitride layer has more dangling bonds inside, the silicon in the silicon rich nitride layer easily reacts with the copper and a copper silicide layer is formed between the copper and the silicon rich nitride layer. Therefore, adhesion of the copper and the silicon rich nitride layer can be improved.
摘要翻译：一种制造铜覆盖层的方法。在暴露的铜层上形成富氮的氮化物层。由于富含硅的氮化物层内部具有更多的悬空键，富硅氮化物层中的硅容易与铜反应，并且在铜和富硅氮化物层之间形成铜硅化物层。因此，可以提高铜和富硅氮化物层的粘合性。

23. 发明授权

US06297561B1 Semiconductor chip 有权
标题翻译：半导体芯片
公开(公告)号：US06297561B1
公开(公告)日：2001-10-02
申请号：US09630529
申请日：2000-08-01
申请人： Hermen Liu , Yimin Huang
发明人： Hermen Liu , Yimin Huang
IPC分类号： H01L2348
CPC分类号： H01L24/05 , H01L23/3171 , H01L24/10 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05553 , H01L2224/05554 , H01L2224/05557 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/13 , H01L2224/13099 , H01L2224/451 , H01L2224/4807 , H01L2224/4845 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01016 , H01L2924/01022 , H01L2924/01029 , H01L2924/0105 , H01L2924/04941 , H01L2924/05042 , H01L2924/12044 , H01L2924/14 , H01L2224/45099 , H01L2924/00015 , H01L2924/00
摘要： The present invention provides a semiconductor chip. The semiconductor chip comprising an integrated circuit (IC) positioned within the semiconductor chip, and a bonding pad positioned on the surface of the semiconductor chip and electrically connected with the IC. The method comprises using a probe to contact a predetermined testing area on the surface of the bonding pad to electrically test the IC, and forming a passivation layer on the surface of the semiconductor chip to passivate the surface of the semiconductor chip. The testing area of the bonding pad is covered under the passivation layer and the passivation layer comprises an opening positioned on the bonding pad outside the testing area which is used as a connecting area for performing wire bonding or bumping.
摘要翻译：本发明提供一种半导体芯片。包括位于半导体芯片内的集成电路（IC）的半导体芯片和位于半导体芯片的表面上且与IC电连接的接合焊盘。该方法包括使用探针接触焊盘表面上的预定测试区域以对IC进行电测试，以及在半导体芯片的表面上形成钝化层以钝化半导体芯片的表面。接合焊盘的测试区域被覆盖在钝化层下方，并且钝化层包括位于测试区域外的焊盘上的开口，该开口用作用于进行引线接合或凸起的连接区域。

24. 发明授权

US6069066A Method of forming bonding pad 有权
标题翻译：形成焊盘的方法
公开(公告)号：US6069066A
公开(公告)日：2000-05-30
申请号：US208025
申请日：1998-12-09
申请人： Yimin Huang , Tri-Rung Yew
发明人： Yimin Huang , Tri-Rung Yew
IPC分类号： H01L21/60 , H01L23/485 , H01L21/44
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L2224/0401 , H01L2224/05546 , H01L2224/05647 , H01L2224/13099 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14
摘要： A method of forming a bonding pad is provided. A substrate is provided and a multi-metal layer is formed on the substrate. An inter-metal dielectric layer with a trench is formed on the multi-metal layer. A conformal barrier layer is formed on the inter-metal dielectric layer. A first metal layer is formed on the barrier layer to fill a part of the trench. A second metal layer is formed on the first metal layer to fill the trench. A part of the first metal layer and a part of the second metal layer flowing out the trench are removed to expose the inter-metal dielectric layer. A cap layer is formed on the inter-metal dielectric layer. A passivation layer is formed on the cap layer. A part of the passivation and a part of the cap layer are removed to form a bonding pad window by a defined masking layer.
摘要翻译：提供一种形成接合焊盘的方法。设置基板，在基板上形成多金属层。在多金属层上形成具有沟槽的金属间介电层。在金属间电介质层上形成保形阻挡层。在阻挡层上形成第一金属层以填充沟槽的一部分。在第一金属层上形成第二金属层以填充沟槽。去除第一金属层的一部分和流出沟槽的第二金属层的一部分，以露出金属间介电层。在金属间介电层上形成盖层。在盖层上形成钝化层。通过限定的掩模层去除钝化部分和覆盖层的一部分以形成焊盘窗口。

25. 发明授权

US06027994A Method to fabricate a dual metal-damascene structure in a substrate 失效
标题翻译：在基材中制造双金属镶嵌结构的方法
公开(公告)号：US06027994A
公开(公告)日：2000-02-22
申请号：US102083
申请日：1998-06-22
申请人： Yimin Huang , Tri-Rung Yew
发明人： Yimin Huang , Tri-Rung Yew
IPC分类号： H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/76808 , H01L23/5226 , H01L2221/1031 , H01L2924/0002
摘要： A method to fabricate a dual damascene structure in a substrate is disclosed in the present invention. A first silicon oxide layer is deposited over the substrate and a silicon nitride layer is formed on the first silicon oxide layer. The first silicon oxide layer and the silicon nitride layer are etched in order to form a via hole on the substrate. Afterwards, a second silicon oxide layer is deposited to refill into the via hole and to cover the silicon nitride layer. A dry etching process is performed to remove the second silicon oxide layer in the via hole and to form a metal trench in the second silicon oxide layer on the silicon nitride layer and a metal trench in the second silicon oxide layer above the via hole. After the formation of the metal trenches, a portion of the second silicon oxide layer is remained on the sidewalls and the bottom of the via hole. A dry etching process is performed to remove the remaining portion of the second silicon oxide layer. At last, metal material is deposited to refill into the via hole and the metal trench, it is followed by the metal CMP processs to remove the excess metal over the silicon oxide. The dual metal-damascene structure on the substrate is complete.
摘要翻译：在本发明中公开了一种在衬底中制造双镶嵌结构的方法。在衬底上沉积第一氧化硅层，在第一氧化硅层上形成氮化硅层。蚀刻第一氧化硅层和氮化硅层以在基板上形成通孔。然后，沉积第二氧化硅层以重新填充到通孔中并覆盖氮化硅层。进行干蚀刻处理以去除通孔中的第二氧化硅层，并且在氮化硅层上的第二氧化硅层中形成金属沟槽，在通孔上方的第二氧化硅层中形成金属沟槽。在形成金属沟槽之后，第二氧化硅层的一部分残留在通孔的侧壁和底部。执行干蚀刻处理以去除第二氧化硅层的剩余部分。最后，沉积金属材料以再填充到通孔和金属沟槽中，之后是金属CMP工艺以除去氧化硅上的多余金属。基板上的双金属镶嵌结构完整。

26. 发明授权

US08501570B2 Method of manufacturing source/drain structures 有权
标题翻译：制造源/漏结构的方法
公开(公告)号：US08501570B2
公开(公告)日：2013-08-06
申请号：US12981610
申请日：2010-12-30
申请人： Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
发明人： Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
IPC分类号： H01L21/02 , H01L21/306 , H01L29/165 , H01L29/66 , H01L29/78 , H01L21/265
CPC分类号： H01L29/7848 , H01L21/02057 , H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/30604 , H01L21/30608 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.
摘要翻译：用于制造集成电路器件的集成电路器件和方法通过在第一掺杂区域中形成第二掺杂区域并且去除第一和第二掺杂区域，从而提供对用于形成集成电路器件的源极和漏极特征的沟槽形状的改进的控制第二掺杂区域通过第一和第二湿蚀刻工艺。

27. 发明授权

US08096132B2 Air-cooled swirlerhead 有权
标题翻译：风冷旋流器
公开(公告)号：US08096132B2
公开(公告)日：2012-01-17
申请号：US12034064
申请日：2008-02-20
申请人： Yimin Huang , Shaun Sullivan , Brian Finstad , Alexander Haplau-Colan
发明人： Yimin Huang , Shaun Sullivan , Brian Finstad , Alexander Haplau-Colan
IPC分类号： F02C1/00 , F02G3/00
CPC分类号： F23R3/14 , F23R3/283 , F23R3/286 , F23R3/46
摘要： A combustor for a gas turbine engine is disclosed which is able to operate with high combustion efficiency, and low nitrous oxide emissions during gas turbine operations. The combustor consists of a can-type configuration which combusts fuel premixed with air and delivers the hot gases to a turbine. Fuel is premixed with air through a swirler and is delivered to the combustor with a high degree of swirl motion about a central axis. This swirling mixture of reactants is conveyed downstream through a flow path that expands; the mixture reacts, and establishes an upstream central recirculation flow along the central axis. A cooling assembly is located on the swirler co-linear with the central axis in which cooler air is conveyed into the prechamber between the recirculation flow and the swirler surface.
摘要翻译：公开了一种用于燃气涡轮发动机的燃烧器，其能够在燃气轮机操作期间以高燃烧效率和低氧化亚氮排放进行操作。燃烧器由罐型构成，其燃烧与空气预混合的燃料并将热气体输送到涡轮机。燃料通过旋流器与空气预混合并且以围绕中心轴线的高度漩涡运动输送到燃烧器。反应物的这种旋转混合物通过膨胀的流动路径向下游传送; 混合物反应，并建立沿中心轴的上游中央再循环流。冷却组件位于与中心轴线共线的旋流器上，其中较冷的空气被输送到再循环流和旋流器表面之间的预燃室中。

28. 发明申请

US20090205339A1 AIR-COOLED SWIRLERHEAD 有权
标题翻译：空冷式SWIRLERHEAD
公开(公告)号：US20090205339A1
公开(公告)日：2009-08-20
申请号：US12034064
申请日：2008-02-20
申请人： Yimin Huang , Shaun Sullivan , Brian Finstad , Alexander Haplau-Colan
发明人： Yimin Huang , Shaun Sullivan , Brian Finstad , Alexander Haplau-Colan
IPC分类号： F23R3/28 , F23R3/14 , F02C7/22
CPC分类号： F23R3/14 , F23R3/283 , F23R3/286 , F23R3/46
摘要： A combustor for a gas turbine engine is disclosed which is able to operate with high combustion efficiency, and low nitrous oxide emissions during gas turbine operations. The combustor consists of a can-type configuration which combusts fuel premixed with air and delivers the hot gases to a turbine. Fuel is premixed with air through a swirler and is delivered to the combustor with a high degree of swirl motion about a central axis. This swirling mixture of reactants is conveyed downstream through a flow path that expands; the mixture reacts, and establishes an upstream central recirculation flow along the central axis. A cooling assembly is located on the swirler co-linear with the central axis in which cooler air is conveyed into the prechamber between the recirculation flow and the swirler surface.
摘要翻译：公开了一种用于燃气涡轮发动机的燃烧器，其能够在燃气轮机操作期间以高燃烧效率和低氧化亚氮排放进行操作。燃烧器由罐型构成，其燃烧与空气预混合的燃料并将热气体输送到涡轮机。燃料通过旋流器与空气预混合并且以围绕中心轴线的高度漩涡运动输送到燃烧器。反应物的这种旋转混合物通过膨胀的流动路径向下游传送; 混合物反应，并建立沿中心轴的上游中央再循环流。冷却组件位于与中心轴线共线的旋流器上，其中较冷的空气被输送到再循环流和旋流器表面之间的预燃室中。

29. 发明授权

US06617234B2 Method of forming metal fuse and bonding pad 失效
标题翻译：形成金属熔丝和焊盘的方法
公开(公告)号：US06617234B2
公开(公告)日：2003-09-09
申请号：US09835014
申请日：2001-04-13
申请人： Sung-Hsiung Wang , Yimin Huang , Chiung-Sheng Hsiung
发明人： Sung-Hsiung Wang , Yimin Huang , Chiung-Sheng Hsiung
IPC分类号： H01L2144
CPC分类号： H01L24/02 , H01L23/5256 , H01L2224/0401 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , Y10S438/978
摘要： A method of forming metal fuses and bonding pads. A conductive layer is formed in a substrate. A dielectric layer is formed over the substrate. The dielectric layer has an opening that exposes a portion of the conductive layer. A metallic layer is formed over the dielectric layer. The metallic layer is patterned to form a metal fuse and a bonding pad. The bonding pad is electrically connected to the conductive layer via the opening. Both the metal fuse and the bonding pad have undercut sidewalls. Spacers are formed on the undercut sidewalls of the metal fuse and the bonding pad. Finally, a passivation layer that exposes the metal fuse and the bonding pad is formed over the substrate.
摘要翻译：一种形成金属熔断器和焊盘的方法。在衬底中形成导电层。介电层形成在衬底上。电介质层具有露出导电层的一部分的开口。在电介质层上形成金属层。将金属层图案化以形成金属熔丝和接合焊盘。接合焊盘经由开口电连接到导电层。金属保险丝和接合垫都有底切的侧壁。垫片形成在金属保险丝和接合垫的底切侧壁上。最后，在衬底上形成暴露金属熔丝和焊盘的钝化层。

30. 发明授权

US06268283B1 Method for forming dual damascene structure 有权
标题翻译：形成双镶嵌结构的方法
公开(公告)号：US06268283B1
公开(公告)日：2001-07-31
申请号：US09248159
申请日：1999-02-09
申请人： Yimin Huang
发明人： Yimin Huang
IPC分类号： H01L214763
CPC分类号： H01L21/76808
摘要： An improved method for forming a dual damascene structure is described. A via opening of the dual damascene structure is formed in a dielectric layer. A non-conformal cap layer is then formed on the substrate before the step of defining the photoresist layer. The non-conformal cap layer only covers the top region of the trench but does not fill the trench. A patterned photoresist layer is then formed on the substrate followed by an etching procedure so as to form a trench. The photoresist layer is then removed. The trench and via opening are filled with a conductive layer. Thereafter, redundant portions of the conductive layer are removed by a planarization process.
摘要翻译：描述了用于形成双镶嵌结构的改进方法。电介质层中形成双镶嵌结构的通孔。然后在限定光致抗蚀剂层的步骤之前，在基板上形成非保形盖层。非保形盖层仅覆盖沟槽的顶部区域，但不填充沟槽。然后在衬底上形成图案化的光致抗蚀剂层，然后进行蚀刻程序以形成沟槽。然后除去光致抗蚀剂层。沟槽和通孔开口填充有导电层。此后，通过平坦化处理去除导电层的冗余部分。

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