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21. 发明申请

US20070087568A1 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
公开(公告)号：US20070087568A1
公开(公告)日：2007-04-19
申请号：US11582880
申请日：2006-10-17
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： C03C15/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

22. 发明申请

US20060246723A1 Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition 审中-公开
标题翻译：用于化学机械抛光的浆料组合物，使用其的半导体元件的表面的平面化方法以及用于控制浆料组成的选择比的方法
公开(公告)号：US20060246723A1
公开(公告)日：2006-11-02
申请号：US10540992
申请日：2003-12-25
申请人： Jea Park , Un Paik , Jin Park , Takeo Katoh
发明人： Jea Park , Un Paik , Jin Park , Takeo Katoh
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for controlling a selection ratio of a chemical-mechanical-polishing slurry composition for polishing and ablating an oxide layer selectively in relation to a nitride layer, the method includes: a step of confirming a polishing-rate selection ratio of an oxide layer to a nitride layer of a chemical-mechanical-polishing slurry composition which includes ceria polishing particles, a dispersing agent, and an anionic additive, while a concentration of the anionic additive is changed; and a step of adjusting the concentration of the anionic additive to attain a desired selection ratio of the slurry composition, on the basis of the confirmed polishing-rate selection ratio, thereby controlling the selection ratio of the slurry composition.
摘要翻译：一种用于控制用于相对于氮化物层选择性地研磨和消融氧化物层的化学机械抛光浆料组合物的选择比率的方法，所述方法包括：将氧化物层的研磨速率选择比确定为化学机械抛光浆料组合物的氮化物层，其中阴离子添加剂的浓度改变，其包括二氧化铈抛光颗粒，分散剂和阴离子添加剂; 以及基于确定的研磨速度选择比，调整阴离子添加剂的浓度以达到浆料组合物的期望选择比例的步骤，从而控制浆料组合物的选择比。

23. 发明申请

US20060118935A1 Laminated semiconductor substrate process for producing the same 有权
标题翻译：用于制造其的层叠半导体衬底工艺
公开(公告)号：US20060118935A1
公开(公告)日：2006-06-08
申请号：US10550761
申请日：2004-04-02
申请人： Eiji Kamiyama , Takeo Katoh , Jea Park
发明人： Eiji Kamiyama , Takeo Katoh , Jea Park
IPC分类号： H01L21/30 , H01L23/06
CPC分类号： H01L21/30608 , H01L21/76254
摘要： The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.
摘要翻译：本发明提供了一种键合衬底，其通过用键合衬底的有源层的表面上具有蚀刻效果的溶液进行仅1nm至1μm的蚀刻而使其最终有源层厚度为200nm以下的结合衬底，已经通过在其中一个被离子注入之后将两个基板接合，然后通过热处理来分离其一部分来制备。 SC-1溶液用于进行蚀刻。在蚀刻之前和/或之后，可以在有源层上分别施加抛光，氢退火和牺牲氧化。该有源层的膜厚度可以在整个表面积上均匀，并且活性层的表面粗糙度也可以降低。

24. 发明授权

US08877643B2 Method of polishing a silicon wafer 有权
标题翻译：抛光硅晶片的方法
公开(公告)号：US08877643B2
公开(公告)日：2014-11-04
申请号：US13376259
申请日：2010-05-28
申请人： Shuhei Matsuda , Tetsuro Iwashita , Ryuichi Tanimoto , Takeru Takushima , Takeo Katoh
发明人： Shuhei Matsuda , Tetsuro Iwashita , Ryuichi Tanimoto , Takeru Takushima , Takeo Katoh
IPC分类号： H01L21/461 , H01L21/02 , B24B37/04 , C09G1/02
CPC分类号： H01L21/02024 , B24B37/044 , C09G1/02 , Y10S438/959
摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.
摘要翻译：本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生以及抛光的硅晶片。通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

25. 发明授权

US08466071B2 Method for etching single wafer 有权
标题翻译：蚀刻单晶片的方法
公开(公告)号：US08466071B2
公开(公告)日：2013-06-18
申请号：US12162829
申请日：2007-01-24
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译：本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴，然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

26. 发明申请

US20120080775A1 METHOD OF POLISHING SILICON WAFER AS WELL AS SILICON WAFER 有权
标题翻译：抛光硅波作为硅波的方法
公开(公告)号：US20120080775A1
公开(公告)日：2012-04-05
申请号：US13376259
申请日：2010-05-28
申请人： Shuhei Matsuda , Tetsuro Iwashita , Ryuichi Tanimoto , Takeru Takushima , Takeo Katoh
发明人： Shuhei Matsuda , Tetsuro Iwashita , Ryuichi Tanimoto , Takeru Takushima , Takeo Katoh
IPC分类号： H01L21/306 , H01L29/34
CPC分类号： H01L21/02024 , B24B37/044 , C09G1/02 , Y10S438/959
摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer.The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.
摘要翻译：本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生以及抛光的硅晶片。通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

27. 发明授权

US07906438B2 Single wafer etching method 失效
标题翻译：单晶片蚀刻方法
公开(公告)号：US07906438B2
公开(公告)日：2011-03-15
申请号：US11669431
申请日：2007-01-31
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.
摘要翻译：本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面单晶晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，各喷嘴移动装置独立地移动多个供给喷嘴28,29，以及用于将蚀刻液14供给到多个供给喷嘴中的每一个的蚀刻液供给装置30，将蚀刻液14从各喷出口排出到晶片11。

28. 发明授权

US07648890B2 Process for producing silicon wafer 有权
标题翻译：硅晶片生产工艺
公开(公告)号：US07648890B2
公开(公告)日：2010-01-19
申请号：US11504969
申请日：2006-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.
摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转，晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

29. 发明申请

US20090004876A1 Method for Etching Single Wafer 有权
标题翻译：蚀刻单晶片的方法
公开(公告)号：US20090004876A1
公开(公告)日：2009-01-01
申请号：US12162829
申请日：2007-01-24
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译：本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴，然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

30. 发明申请

US20070224821A1 Method for Manufacturing Silicon Wafers 失效
标题翻译：硅晶片的制造方法
公开(公告)号：US20070224821A1
公开(公告)日：2007-09-27
申请号：US11597169
申请日：2005-09-02
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takatshi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takatshi , Takeo Katoh
IPC分类号： C30B33/00
CPC分类号： B24B37/042 , H01L21/02019 , H01L21/30604
摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.
摘要翻译：该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光。该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

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