会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • CMP compositions containing a soluble peroxometalate complex and methods of use thereof
    • 含有可溶性过氧金属酸盐络合物的CMP组合物及其使用方法
    • US08541310B2
    • 2013-09-24
    • US11800188
    • 2007-05-04
    • Daniela WhiteJohn Parker
    • Daniela WhiteJohn Parker
    • H01L21/32H01L21/461B44C1/22C23F1/00C23F15/00
    • H01L21/3212C09G1/02
    • The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    • 本发明提供了一种用于在过氧化氢存在下抛光含钌底物的化学机械抛光(CMP)组合物,而在抛光过程中不形成四氧化钌的毒性水平。 组合物包含(a)催化氧化剂,其包含水溶性过氧金属酸盐络合物,过氧金属酸盐络合物的可氧化前体或其组合,(b)颗粒磨料; 和(c)水性载体。 过氧金属酸盐络合物及其前体各自具有通过过氧化氢可氧化的还原形式,以在化学机械抛光期间再生过氧金属酸盐络合物。 还提供了用CMP抛光含钌表面的CMP方法。
    • 22. 发明授权
    • Ruthenium CMP compositions and methods
    • 钌CMP组合物和方法
    • US08008202B2
    • 2011-08-30
    • US11888406
    • 2007-08-01
    • Daniela WhiteJohn Parker
    • Daniela WhiteJohn Parker
    • B24D3/34H01L21/302
    • H01L21/3212B24B37/044C09G1/02C09K3/1463C23F3/04
    • The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    • 本发明提供了一种用于在氧化剂如过氧化氢存在下抛光含钌底物的化学机械抛光(CMP)组合物,而在抛光过程中不形成四氧化钌的毒性水平。 该组合物包含悬浮在含有钌配位的氧化氮配体(N-O配体)如氮氧根(例如4-羟基-TEMPO)的含水载体中的颗粒磨料(例如二氧化硅,氧化铝和/或二氧化钛) )。 在氧化剂存在下,N-O配位体可以防止在基片表面沉积氧化态为Ⅳ或更高的钌物质,同时形成可氧化的Ru(II)N-O配位络合物 在基板的CMP期间形成钌。 还提供了用CMP抛光含钌表面的CMP方法。
    • 24. 发明申请
    • Ruthenium CMP compositions and methods
    • 钌CMP组合物和方法
    • US20090035942A1
    • 2009-02-05
    • US11888406
    • 2007-08-01
    • Daniela WhiteJohn Parker
    • Daniela WhiteJohn Parker
    • B24D3/34H01L21/302
    • H01L21/3212B24B37/044C09G1/02C09K3/1463C23F3/04
    • The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises a particulate abrasive (e.g., silica, alumina, and/or titania) suspended in an aqueous carrier containing a ruthenium-coordinating oxidized nitrogen ligand (N—O ligand), such as a nitroxide (e.g., 4-hydroxy-TEMPO). In the presence of the oxidizing agent, the N—O ligand prevents the deposition of ruthenium species having an oxidation state of IV or higher on the surface of the substrate, and concomitantly forms a soluble Ru(II) N—O coordination complex with oxidized ruthenium formed during CMP of the substrate. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.
    • 本发明提供了一种用于在氧化剂如过氧化氢的存在下抛光含钌底物的化学 - 机械抛光(CMP)组合物,而在抛光过程中不形成四氧化钌的毒性水平。 组合物包含悬浮在含有钌配位的氧化氮配体(N-O配体)如氮氧根(例如4-羟基-TEMPO)的含水载体中的颗粒磨料(例如二氧化硅,氧化铝和/或二氧化钛)。 在氧化剂的存在下,NO配体防止了在基板表面上具有IV或更高氧化态的钌物质的沉积,同时形成了在CMP期间形成的氧化钌的可溶性Ru(II)NO配位络合物 的基底。 还提供了用CMP抛光含钌表面的CMP方法。
    • 27. 发明授权
    • Thermosetting compositions containing carbamate-functional polylmers prepared using atom transfer radical polymerization
    • 含有使用原子转移自由基聚合制备的氨基甲酸酯官能聚合物的热固性组合物
    • US06306965B1
    • 2001-10-23
    • US09375020
    • 1999-08-16
    • Lawrence G. AndersonJames B. O'DwyerDennis A. SimpsonDaniela White
    • Lawrence G. AndersonJames B. O'DwyerDennis A. SimpsonDaniela White
    • C08F830
    • C08F220/36C08G18/3831C09D201/025
    • A thermosetting composition is provided comprising: (a) a crosslinking agent having at least two functional groups that are reactive with carbamates; and (b) a non-gelled, carbamate functional polymer prepared by atom transfer radical polymerization, in the presence of an initiator having at least one radically transferable group. The polymer contains at least one of the following polymer chain structures: —{(M)p—(G)q}x— or —{(G)q—(M)p}x— wherein M is a residue, that is free of carbamate functionality, of at least one ethylenically unsaturated radically polymerizable monomer; G is a residue, that has carbamate functionality, of at least one ethylenically unsaturated radically polymerizable monomer; p and q represent average numbers of residues occurring in a block of residues in each polymer chain structure; and p, q, and x are each independently selected for each structure such that the carbamate functional polymer has a number average molecular weight of at least 250. Also provided by the present invention are methods of coating a substrate using compositions of the present invention and substrates coated by such methods, as well as color-plus-clear composite coatings.
    • 提供一种热固性组合物,其包括:(a)具有至少两个与氨基甲酸酯反应的官能团的交联剂; 和(b)在具有至少一个可自由基转移基团的引发剂的存在下通过原子转移自由基聚合制备的非胶凝的氨基甲酸酯官能聚合物。 所述聚合物含有至少一种以下聚合物链结构:或其中M是不含氨基甲酸酯官能团的至少一种烯属不饱和自由基聚合单体的残基; G是具有氨基甲酸酯官能团的至少一种烯属不饱和自由基聚合单体的残基; p和q表示在每个聚合物链结构的残基块中发生的残基的平均数目; 对于每种结构,p,q和x各自独立地选择,使得氨基甲酸酯官能聚合物的数均分子量至少为250.本发明还提供了使用本发明的组合物涂覆底物的方法和 通过这些方法涂覆的基材,以及彩色 - 透明复合涂层。
    • 30. 发明授权
    • Copper-passivating CMP compositions and methods
    • 铜钝化CMP组合物和方法
    • US07955520B2
    • 2011-06-07
    • US11986921
    • 2007-11-27
    • Daniela WhiteJason KeleherJohn Parker
    • Daniela WhiteJason KeleherJohn Parker
    • C09K13/00
    • H01L21/3212C09G1/02C09K3/1409C23F3/04C23F3/06
    • The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.
    • 本发明提供用于抛光含铜基材的化学机械抛光(CMP)方法和组合物。 本发明的方法需要用本发明的CMP组合物,优选在氧化剂(例如过氧化氢)的存在下研磨含铜基材的表面。 本发明的CMP组合物包含颗粒磨料,铜络合剂,带有酸性OH基团的铜钝化剂和与酸性OH基团1,6关系的另外的氧取代基和水性载体。 本发明的优选组合物包含约0.01至约1重量%的颗粒磨料,约0.1至约1重量%的铜络合剂,约10至约1000ppm的铜钝化剂。