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21. 发明授权

US06464162B2 Web processing system 失效
公开(公告)号：US06464162B2
公开(公告)日：2002-10-15
申请号：US10050108
申请日：2002-01-18
申请人： Kenji Watanabe , Tsuneo Yamazaki , Fujio Kuwabara , Akihiro Sanda
发明人： Kenji Watanabe , Tsuneo Yamazaki , Fujio Kuwabara , Akihiro Sanda
IPC分类号： B65H1804
CPC分类号： H02K49/106 , B65H18/106 , B65H2301/4148 , B65H2403/7254 , B65H2403/731 , B65H2515/32 , B65H2701/1719 , H02K49/108 , Y10S242/909 , Y10T83/2074 , Y10T83/7809 , B65H2220/02
摘要： A winding device has a drive shaft having a flange, and a holder rotatably mounted on the drive shaft in covering relation to the flange, for winding the web therearound. The holder has a first torque adjustment plate rotatably mounted on the drive shaft and having a surface disposed in facing relation to a surface of the flange, the first torque adjustment plate supporting a plurality of magnets on the surface thereof, and a second torque adjustment plate rotatably mounted on the drive shaft and having a surface disposed in facing relation to an opposite surface of the flange, the second torque adjustment plate supporting a plurality of magnets on the surface thereof. The winding device is capable of winding relatively wide webs having a large thickness ranging from 100 to 150 &mgr;m, e.g., photographic photosensitive webs (films), with a low tension fluctuation ratio of ±5% or less, while producing large tension easily and stably. The winding device is constructed for easy maintenance.

22. 发明授权

US06304243B1 Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US06304243B1
公开(公告)日：2001-10-16
申请号：US08132692
申请日：1993-10-06
申请人： Kenichi Kondo , Kunihiro Takahashi , Hiroaki Takasu , Tsuneo Yamazaki , Atsushi Sakurai
发明人： Kenichi Kondo , Kunihiro Takahashi , Hiroaki Takasu , Tsuneo Yamazaki , Atsushi Sakurai
IPC分类号： G09G336
CPC分类号： G02F1/13454 , G02F1/135 , G02F1/1362 , G02F2001/133354 , G02F2202/105 , G09G3/001 , G09G3/3611 , G09G3/3648 , G09G5/006 , G09G2310/027 , G09G2310/0297 , H01L27/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H01L2924/3025 , H04N13/158 , H04N13/189 , H04N13/194 , H04N13/239 , H04N13/324 , H04N13/363 , H04N13/398 , H01L2924/00014 , H01L2924/00
摘要： A highly integrated light valve is formed with a composite substrate formed of a quartz substrate and a monocrystalline silicon thin film layer bonded to the quartz substrate, in which an X driving circuit and a Y driving circuit are integrated utilizing very large scale integration processing. Driving electrodes are arranged in a matrix format on the composite substrate for providing signals output from the X driving circuit and the Y driving circuit to respective transistors and display pixel electrodes arranged at each intersection of the driving electrodes in the matrix. A control circuit for supplying timing signals to the X driving circuit and the Y driving circuit and a display data generating circuit for generating display data in order to display an image are also integrated on the composite substrate. A light source element driving circuit for driving a light source element is provided thereon for projecting a displayed image. A liquid crystal layer is sealed in a gap between the composite substrate and a second, opposed substrate with a sealing agent. The sealing agent is, for example, a resin which is stiffened by ultraviolet radiation and is supplied along a predetermined seal region. The present invention provides an improved structure for a light valve device having a high reliability, compact size, high pixel density and high resolution.
摘要翻译：由石英基板和与石英基板结合的单晶硅薄膜层形成的复合基板形成高度集成的光阀，其中X驱动电路和Y驱动电路采用非常大规模的集成处理。驱动电极以矩阵形式布置在复合衬底上，用于将从X驱动电路和Y驱动电路输出的信号提供给相应的晶体管，并且布置在矩阵中的驱动电极的每个交叉处的显示像素电极。用于向X驱动电路和Y驱动电路提供定时信号的控制电路和用于产生显示数据以显示图像的显示数据产生电路也被集成在复合基板上。在其上设置有用于驱动光源元件的光源元件驱动电路，用于投影所显示的图像。将液晶层密封在复合基板和具有密封剂的第二相对基板之间的间隙中。密封剂例如是通过紫外线照射而被加强并沿着预定的密封区域供给的树脂。本发明提供了具有高可靠性，紧凑尺寸，高像素密度和高分辨率的光阀装置的改进结构。

23. 发明授权

US06191476B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06191476B1
公开(公告)日：2001-02-20
申请号：US08859571
申请日：1997-05-20
申请人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
发明人： Kunihiro Takahashi , Mizuaki Suzuki , Tsuneo Yamazaki , Hiroaki Takasu , Kunio Nakajima , Atsushi Sakurai , Tadao Iwaki , Yoshikazu Kojima , Masaaki Kamiya
IPC分类号： H01L2310
CPC分类号： G02F1/13454 , G02F1/133512 , G02F2001/136281 , H01L23/36 , H01L23/367 , H01L27/12 , H01L27/1203 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
摘要翻译：为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路。一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

24. 发明授权

US6067062A Light valve device 失效
标题翻译：光阀装置
公开(公告)号：US6067062A
公开(公告)日：2000-05-23
申请号：US749292
申请日：1991-08-23
申请人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
发明人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
IPC分类号： G02F1/1337 , G02F1/136 , G02F1/1362 , G09G3/20 , G09G3/36 , G09G5/00 , H01L27/12
CPC分类号： G02F1/13454 , G02F1/13378 , G09G3/3648 , H01L27/1214 , H01L27/1251 , G02F1/136213 , G02F2202/105 , G09G2330/02 , G09G5/006
摘要： A light valve has a composite substrate comprised of an electrically insulating substrate and a semiconductor single crystal thin film formed over the electrically insulating substrate. A pixel array comprising semiconductor switch elements is formed in the semiconductor single crystal thin film. A peripheral circuit having circuit elements is formed in the semiconductor single crystal thin film so that a small-sized, high speed light valve is obtained. X- driver and Y-driver circuits are formed in the semiconductor single crystal thin film and controlled by a control circuit, such as a video signal processing circuit, which receives and processes video signals inputted directly from an external source. The peripheral circuit can be a DRAM sense amplifier for sensing charges stored in each pixel of the pixel array to detect defects in the pixel array. The peripheral circuit can be a photosensor circuit for detecting an intensity of incident light to monitor the performance of a light source of the light valve. The peripheral circuit can be a temperature sensor for detecting the temperature of a liquid crystal layer of the light valve, and may be comprised of Darlington connected NPN transistors formed in the semiconductor single crystal thin film. The peripheral circuit can also be a solar cell for converting incident light into electrical energy to supply power to at least one of the pixel array, X-driver and Y-driver circuits and the peripheral circuit.
摘要翻译：光阀具有由电绝缘基板和形成在电绝缘基板上的半导体单晶薄膜构成的复合基板。包含半导体开关元件的像素阵列形成在半导体单晶薄膜中。在半导体单晶薄膜中形成具有电路元件的外围电路，从而获得小型高速光阀。 X驱动器和Y驱动器电路形成在半导体单晶薄膜中，并由诸如视频信号处理电路的控制电路控制，该电路接收并处理从外部源直接输入的视频信号。外围电路可以是用于感测存储在像素阵列的每个像素中的电荷的DRAM读出放大器，以检测像素阵列中的缺陷。外围电路可以是用于检测入射光的强度以监视光阀的光源的性能的光电传感器电路。外围电路可以是用于检测光阀的液晶层的温度的温度传感器，并且可以由形成在半导体单晶薄膜中的达林顿连接的NPN晶体管组成。外围电路也可以是用于将入射光转换为电能以向像素阵列，X驱动器和Y驱动器电路和外围电路中的至少一个供电的太阳能电池。

25. 发明授权

US5637187A Light valve device making 失效
标题翻译：光阀装置制造
公开(公告)号：US5637187A
公开(公告)日：1997-06-10
申请号：US464075
申请日：1995-06-05
申请人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
发明人： Hiroaki Takasu , Yoshikazu Kojima , Masaaki Kamiya , Tsuneo Yamazaki , Hiroshi Suzuki , Masaaki Taguchi , Ryuichi Takano , Satoru Yabe
IPC分类号： G02F1/1337 , G02F1/136 , G02F1/1362 , G09G3/20 , G09G3/36 , G09G5/00 , H01L27/12 , H01L21/00
CPC分类号： G02F1/13454 , G02F1/13378 , G09G3/3648 , H01L27/1214 , H01L27/1251 , G02F1/136213 , G02F2202/105 , G09G2330/02 , G09G5/006
摘要： A process for forming a light valve device comprises forming a semiconductor single crystal film to form a composite substrate by polishing a semiconductor single crystal substrate after an electric insulating substrate has been bonded thereto; forming a group of pixel electrodes for defining a pixel region and a group of switch elements for selectively energizing the pixel electrodes by integrating a pixel array portion over the composite substrate; forming a liquid crystal aligning means for the pixel region; superposing an opposed substrate over the composite substrate with a gap therebetween; and filling the gap with liquid crystal material.
摘要翻译：形成光阀装置的方法包括：形成半导体单晶膜，以在电绝缘基板已经结合之后通过抛光半导体单晶基板来形成复合基板; 形成用于限定像素区域的一组像素电极和一组开关元件，用于通过在复合衬底上积分像素阵列部分来选择性地激励像素电极; 形成用于像素区域的液晶对准装置; 在复合基板上叠置相对的基板，其间具有间隙; 并用液晶材料填充间隙。

26. 发明授权

US5486708A Light valve device using semiconductive composite substrate 失效
标题翻译：光阀装置采用半导体复合基板
公开(公告)号：US5486708A
公开(公告)日：1996-01-23
申请号：US264635
申请日：1994-06-23
申请人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
发明人： Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
IPC分类号： H01L29/78 , G02F1/1335 , G02F1/1362 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L21/76264 , H01L27/1214 , H01L27/1266 , H01L29/66772 , H01L29/78648 , G02F1/133512 , G02F2001/13613 , G02F2202/105 , H01L21/76289 , H01L2221/68363 , Y10S148/012 , Y10S148/135
摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.
摘要翻译：具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。还公开了使用该半导体器件的光阀装置。在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。还公开了一种微型高密度光阀装置。在该光阀装置中，在多层基板之间配置有电光物质。多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

27. 发明授权

US5434433A Semiconductor device for a light wave 失效
标题翻译：用于光波的半导体器件
公开(公告)号：US5434433A
公开(公告)日：1995-07-18
申请号：US106418
申请日：1993-08-13
申请人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
发明人： Hiroaki Takasu , Yoshikazu Kojima , Kunihiro Takahashi , Tsuneo Yamazaki , Tadao Iwaki
IPC分类号： G02F1/1335 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09G3/36 , H01L21/77 , H01L27/12 , H01L29/786 , H01L33/00
CPC分类号： G02F1/13454 , H01L27/1203 , H01L27/1214 , G02F2001/136281 , G02F2202/105
摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.
摘要翻译：利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。在透明部分中形成像素阵列。驱动电路形成在不透明部分的顶面。将透明支撑基板层叠到半导体基板的顶面以进行加强。通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

28. 发明授权

US4609930A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US4609930A
公开(公告)日：1986-09-02
申请号：US607418
申请日：1984-05-07
申请人： Tsuneo Yamazaki
发明人： Tsuneo Yamazaki
IPC分类号： H01L29/78 , H01L27/12 , H01L29/786
CPC分类号： H01L29/78633
摘要： A thin film transistor of amorphous silicon is supported by an insulated gate on an insulating substrate and has the opposite side covered with a shading layer of amorphous silicon containing germanium in an amount more than 30% atomic density.
摘要翻译：非晶硅的薄膜晶体管由绝缘基板上的绝缘栅极支撑，并且相对侧覆盖有超过30％原子密度的含锗锗的阴影层。

29. 发明授权

US4499483A Silicon photodiode with n-type control layer 失效
标题翻译：具有n型控制层的硅光电二极管
公开(公告)号：US4499483A
公开(公告)日：1985-02-12
申请号：US603983
申请日：1984-04-26
申请人： Tsuneo Yamazaki , Mervat Faltas , Paul P. Webb
发明人： Tsuneo Yamazaki , Mervat Faltas , Paul P. Webb
IPC分类号： H01L31/105 , H01L31/18 , H01L27/14
CPC分类号： H01L31/105 , H01L31/1804 , Y02E10/547
摘要： A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance.The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.
摘要翻译：具有从与p型区域延伸的部分相邻的表面的一部分延伸到硅体的n型控制层的p-nu-n硅光电二极管。结合该控制层的光电二极管具有高得多的结电阻。本发明还包括制造具有减少数量的处理步骤的光电二极管的改进方法。改进之处在于，在钝化表面并从表面延伸到体内的p型区域之前，将As或Sb注入n型Si体的表面以形成n型层。

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