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21. 发明授权

US08354336B2 Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer 失效
标题翻译：使用有机保护层形成表面上具有降低的腐蚀和水分解的电极
公开(公告)号：US08354336B2
公开(公告)日：2013-01-15
申请号：US12820543
申请日：2010-06-22
申请人： Ali Afzali-Ardakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
发明人： Ali Afzali-Ardakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： B82Y10/00 , H01L21/76834 , H01L29/0665 , H01L51/0093 , H01L51/0504 , H01L51/102
摘要： Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.
摘要翻译：因此，本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。提供了具有设置在其上的导电层的衬底，并且导电层具有具有暴露表面的氧化物层。氧化物层的暴露表面接触有机表面活性化合物在有机溶剂中的溶液，以在氧化物层上形成有机表面活性化合物的保护层。根据表面活性化合物的化学结构，保护层的厚度为约0.5nm至约5nm，并且其范围。

22. 发明申请

US20120052308A1 Doped Carbon Nanotubes and Transparent Conducting Films Containing the Same 有权
公开(公告)号：US20120052308A1
公开(公告)日：2012-03-01
申请号：US12873427
申请日：2010-09-01
申请人： Mostafa M. El-Ashry , Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
发明人： Mostafa M. El-Ashry , Ali Afzali-Ardakani , Bhupesh Chandra , George S. Tulevski
IPC分类号： H01B1/04 , B05D5/12 , B32B9/00 , H01B1/12 , B32B17/06 , B82Y40/00 , B82Y30/00
CPC分类号： H01B1/24 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/166 , C03C17/22 , C03C2217/28 , Y10S977/742 , Y10T428/30
摘要： Transparent conducting electrodes include a doped single walled carbon nanotube film and methods for forming the doped single walled carbon nanotube (SWCNT) by solution processing. The method generally includes depositing single walled carbon nanotubes dispersed in a solvent and a surfactant onto a substrate to form a single walled carbon nanotube film thereon; removing all of the surfactant from the carbon nanotube film; and exposing the single walled carbon nanotube film to a single electron oxidant in a solution such that one electron is transferred from the single walled carbon nanotubes to each molecule of the single electron oxidant.

23. 发明授权

US08026560B2 Ultra-sensitive detection techniques 有权
公开(公告)号：US08026560B2
公开(公告)日：2011-09-27
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

24. 发明申请

US20110124187A1 VAPOR PHASE DEPOSITION PROCESSES FOR DOPING SILICON 失效
标题翻译：用于掺硅的蒸气相沉积工艺
公开(公告)号：US20110124187A1
公开(公告)日：2011-05-26
申请号：US12625835
申请日：2009-11-25
申请人： Ali Afzali-Ardakani , Damon B. Farmer , Lidija Sekaric
发明人： Ali Afzali-Ardakani , Damon B. Farmer , Lidija Sekaric
IPC分类号： H01L21/22
CPC分类号： H01L21/2254
摘要： A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.
摘要翻译：用掺杂剂原子掺杂硅层的方法通常包括使掺杂剂前体的蒸气与存在于硅层上的氧化物和/或氢氧化物反应性位点反应以形成掺杂剂前体的自组装单层; 用水蒸汽水解掺杂剂前体的自组装单层以在掺杂剂前体上形成侧基羟基; 用氧化物层封闭自组装单层; 以及在有效地将掺杂剂原子从掺杂剂前体扩散到硅层中的温度下退火硅层。可以以类似的方式形成另外的单层，由此提供受控的掺杂剂前体化合物的逐层气相沉积用于硅的受控掺杂。

25. 发明授权

US07932128B2 Polymeric material, method of forming the polymeric material, and method of forming a thin film using the polymeric material 有权
标题翻译：聚合材料，形成聚合物材料的方法以及使用聚合物材料形成薄膜的方法
公开(公告)号：US07932128B2
公开(公告)日：2011-04-26
申请号：US11771854
申请日：2007-06-29
申请人： Ali Afzali-Ardakani , Cherie R. Kagan
发明人： Ali Afzali-Ardakani , Cherie R. Kagan
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , C08F12/22 , C08F12/26 , C08F12/30 , C08F112/32 , C09D125/18 , H01L51/004 , H01L51/0558 , C08F220/18 , C08F212/32
摘要： A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.
摘要翻译：用侧基多环芳族化合物前体形成聚合物材料的方法包括形成包含至少一种可聚合官能团的多环芳族化合物前体（如并五苯前体），并聚合可聚合官能团以形成具有侧挂前体的聚合物材料。

26. 发明申请

US20100327259A1 Ultra-Sensitive Detection Techniques 有权
标题翻译：超敏感检测技术
公开(公告)号：US20100327259A1
公开(公告)日：2010-12-30
申请号：US12837119
申请日：2010-07-15
申请人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Sudhir Gowda , Supratik Guha , Hendrik F. Hamann , Emanuel Tutuc
IPC分类号： H01L29/775
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/0676 , Y10S977/724 , Y10S977/953
摘要： Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.
摘要翻译：提供了超灵敏检测技术。一方面，提供一种检测装置。检测装置包括源; 排水纳米线，其包括半导体材料，所述半导体材料具有夹在所述源极上的第一端和夹在所述漏极上并在其间自由悬挂的第二端; 和靠近纳米线的门。

27. 发明申请

US20100044678A1 METHOD OF PLACING A SEMICONDUCTING NANOSTRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTING NANOSTRUCTURE 有权
标题翻译：放置半导体纳米结构的方法和包括半导体纳米结构的半导体器件
公开(公告)号：US20100044678A1
公开(公告)日：2010-02-25
申请号：US12195524
申请日：2008-08-21
申请人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
发明人： Ali Afzali-Ardakani , Supratik Guha , Cherie R. Kagan , George S. Tulevski , Emanuel Tutuc
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0012
摘要： A method of placing a functionalized semiconducting nanostructure, includes functionalizing a semiconducting nanostructure including one of a nanowire and a nanocrystal, with an organic functionality including a functional group for bonding to a bonding surface, dispersing the functionalized semiconducting nanostructure in a solvent to form a dispersion, and depositing the dispersion onto the bonding surface.
摘要翻译：放置功能化半导体纳米结构的方法包括使包括纳米线和纳米晶体之一的半导体纳米结构官能化，具有包括键合表面的官能团的有机官能团，将官能化的半导体纳米结构分散在溶剂中以形成分散体，并将该分散体沉积到粘合表面上。

28. 发明申请

US20080265381A1 SiCOH DIELECTRIC 审中-公开
标题翻译： SiCOH电介质
公开(公告)号：US20080265381A1
公开(公告)日：2008-10-30
申请号：US12133043
申请日：2008-06-04
申请人： Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
发明人： Ali Afzali-Ardakani , Stephen M. Gates , Alfred Grill , Deborah A. Neumayer , Son Nguyen , Vishnubhai V. Patel
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound.
摘要翻译：可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的。

29. 发明申请

US20080102213A1 Selective placement of carbon nanotubes through functionalization 有权
标题翻译：通过功能化选择性地放置碳纳米管
公开(公告)号：US20080102213A1
公开(公告)日：2008-05-01
申请号：US11324441
申请日：2006-01-03
申请人： Ali Afzali-Ardakani , Phaedon Avouris , James B. Hannon , Christian Klinke
发明人： Ali Afzali-Ardakani , Phaedon Avouris , James B. Hannon , Christian Klinke
IPC分类号： B05D3/04
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/28 , H01B1/04 , Y10S977/742 , Y10S977/847
摘要： The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.
摘要翻译：本发明提供了一种通过使用具有共价键合到这种碳纳米管上的有机化合物的官能化碳纳米管来选择性地将碳纳米管置于基材表面上的方法。有机化合物包括至少两个官能团，其中第一个能够与碳纳米管形成共价键，其中第二个能够选择性地键合金属氧化物。这样的官能化碳纳米管与具有至少一部分含有金属氧化物的基材表面接触。有机化合物的第二官能团选择性地键合到金属氧化物上，以便将官能化的碳纳米管选择性地置于包含金属氧化物的衬底表面的至少一部分上。

30. 发明申请

US20070173071A1 SiCOH dielectric 审中-公开
标题翻译： SiCOH电介质
公开(公告)号：US20070173071A1
公开(公告)日：2007-07-26
申请号：US11336726
申请日：2006-01-20
申请人： Ali Afzali-Ardakani , Stephen Gates , Alfred Grill , Deborah Neumayer , Son Nguyen , Vishnubhai Patel
发明人： Ali Afzali-Ardakani , Stephen Gates , Alfred Grill , Deborah Neumayer , Son Nguyen , Vishnubhai Patel
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02348 , H01L21/02362 , H01L21/7682 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound
摘要翻译：可用于半导体器件制造的多孔复合材料，其中孔的直径（或特征尺寸）和孔径分布（PSD）以纳米级方式进行控制，并且其表现出改进的内聚强度（或等效地提高的断裂韧性或降低脆性），并且提供了诸如应力腐蚀开裂，Cu进入和其它关键性能等性能的降低的耐水分性。多孔复合材料是利用至少一种双功能有机致孔剂作为前体化合物制造的

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