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    • 21. 发明授权
    • Method of oxidizing work pieces and oxidation system
    • 氧化工件和氧化系统的方法
    • US06869892B1
    • 2005-03-22
    • US10767470
    • 2004-01-30
    • Keisuke SuzukiToshiyuki IkeuchiKimiya AokiDavid Paul BruncoSteven Robert SossAnthony Dip
    • Keisuke SuzukiToshiyuki IkeuchiKimiya AokiDavid Paul BruncoSteven Robert SossAnthony Dip
    • C23C8/10H01L21/316H01L21/31
    • H01L21/02238C23C8/10H01L21/02255H01L21/31662
    • A method of oxidizing work pieces according to the present invention comprises the steps of: containing a plurality of work pieces W in a processing vessel 22 which has a predetermined length and is capable forming a vacuum therein, oxidizing surfaces of the work pieces in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. The oxidative gas and the reductive gas are respectively supplied into the processing vessel in the longitudinal direction. Parts of the reductive gas are additionally supplied from at least two or more independently controlled gas nozzles located at separate locations in the longitudinal direction of the processing vessel. The gas flow rate through each nozzle is set depending on any combination of the work pieces composed of product wafers, dummy wafers, and monitor wafers in the processing vessel.
    • 根据本发明的氧化工件的方法包括以下步骤:在具有预定长度并且能够形成真空的处理容器22中容纳多个工件W,在工作气氛中氧化工件的表面 包括通过将氧化性气体和还原性气体供应到处理容器中以与气体相互作用而产生的活性氧和活性羟基。 氧化性气体和还原气体分别沿长度方向供给到处理容器内。 部分还原气体从位于处理容器的纵向方向上的分开位置的至少两个或多个独立控制的气体喷嘴另外供应。 通过每个喷嘴的气体流速根据由处理容器中的产品晶片,虚拟晶片和监视晶片组成的工件的任何组合来设定。