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21. 发明申请

US20100023678A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND ACCESS DEVICE 有权
标题翻译：非易失性存储器件，非易失性存储器系统和访问器件
公开(公告)号：US20100023678A1
公开(公告)日：2010-01-28
申请号：US12523756
申请日：2008-01-25
申请人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
发明人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
IPC分类号： G06F12/00 , H01L35/00
CPC分类号： G06F1/206 , G11C7/04 , G11C16/102
摘要： When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
摘要翻译：当访问设备访问非易失性存储设备时，非易失性存储设备或访问设备检测或计算非易失性存储设备的温度T. 非易失性存储器件的温度自适应控制部分基于温度T控制对非易失性存储器的访问速率。因此，控制部分控制速率使得非易失性存储器件的温度T不能超过极限温度 Trisk。以这种方式，非易失性存储器系统可以在喷射半导体存储器件时消除燃烧的危险，并且可以高速读取和写入数据。

22. 发明申请

US20070033364A1 Information recording medium, information recording medium accessing apparatus and accessing method 有权
标题翻译：信息记录介质，信息记录介质访问装置和访问方法
公开(公告)号：US20070033364A1
公开(公告)日：2007-02-08
申请号：US10577418
申请日：2004-10-28
申请人： Takuji Maeda , Masahiro Nakanishi , Shinji Inoue , Hirokazu Sou
发明人： Takuji Maeda , Masahiro Nakanishi , Shinji Inoue , Hirokazu Sou
IPC分类号： G06F12/00
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： An information recording medium such as a semiconductor memory card includes a first semiconductor memory having a first recording area accessed by a relatively small access unit and storing file system management information, a second semiconductor memory having a second recording area accessed by a relatively large access unit and storing file data (file entity data), and a controller for controlling the first and second semiconductor memories. The information recording medium selects either one of recording areas of the first and second semiconductor memories depending on the data type, and writes data into the selected recording area.
摘要翻译：诸如半导体存储卡的信息记录介质包括具有由相对较小的存取单元访问的第一记录区和存储文件系统管理信息的第一半导体存储器，具有由相对大的访问单元访问的第二记录区的第二半导体存储器并存储文件数据（文件实体数据）以及用于控制第一和第二半导体存储器的控制器。信息记录介质根据数据类型选择第一和第二半导体存储器的记录区域中的一个，并将数据写入所选择的记录区域。

23. 发明申请

US20060007738A1 Area management type memory system, area management type memory unit and area management type memory controller 审中-公开
标题翻译：区域管理类型存储系统，区域管理类型存储单元和区域管理类型存储控制器
公开(公告)号：US20060007738A1
公开(公告)日：2006-01-12
申请号：US11175399
申请日：2005-07-07
申请人： Shinji Inoue , Takuji Maeda , Masayuki Toyama , Tomoaki Izumi , Masahiro Nakanishi , Shoichi Tsujita
发明人： Shinji Inoue , Takuji Maeda , Masayuki Toyama , Tomoaki Izumi , Masahiro Nakanishi , Shoichi Tsujita
IPC分类号： G11C11/34
CPC分类号： G06F11/201
摘要： In a storage medium which has a number of areas, access to any area is controlled in accordance with whether or not access to another area is possible, and thereby, destruction of data due to malfunctioning or a wrong operation is prevented. A link control part which controls access to the second area based on the information on access to the first area is provided, and access to the second area is controlled on the basis of whether or not access to the first area is possible. Control becomes possible, such that access to the second area becomes impossible in the state where access to the first area is impossible, while access to the second area becomes possible in the case where access to the first area is possible.
摘要翻译：在具有多个区域的存储介质中，根据是否可以访问其他区域来控制对任何区域的访问，从而防止由于故障或错误操作而导致的数据破坏。提供了基于关于对第一区域的访问的信息来控制对第二区域的访问的链接控制部分，并且基于是否可以访问第一区域来控制对第二区域的访问。控制成为可能，使得在不可能访问第一区域的状态下不可能访问第二区域，而在可能访问第一区域的情况下可以访问第二区域。

24. 发明授权

US08209504B2 Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate 有权
标题翻译：非易失性存储器件，非易失性存储器系统和具有可变读取和写入访问速率的访问设备
公开(公告)号：US08209504B2
公开(公告)日：2012-06-26
申请号：US12523756
申请日：2008-01-25
申请人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
发明人： Masahiro Nakanishi , Isao Kato , Masayuki Toyama , Tatsuya Adachi , Hirofumi Nakagaki , Takuji Maeda
IPC分类号： G06F13/00
CPC分类号： G06F1/206 , G11C7/04 , G11C16/102
摘要： When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
摘要翻译：当访问设备访问非易失性存储设备时，非易失性存储设备或访问设备检测或计算非易失性存储设备的温度T. 非易失性存储器件的温度自适应控制部分基于温度T控制对非易失性存储器的访问速率。因此，控制部分控制速率使得非易失性存储器件的温度T不能超过极限温度 Trisk。以这种方式，非易失性存储器系统可以在喷射半导体存储器件时消除燃烧的危险，并且可以高速读取和写入数据。

25. 发明授权

US08185705B2 Information recording medium, information recording medium accessing apparatus and accessing method 有权
标题翻译：信息记录介质，信息记录介质访问装置和访问方法
公开(公告)号：US08185705B2
公开(公告)日：2012-05-22
申请号：US10577418
申请日：2004-10-28
申请人： Takuji Maeda , Masahiro Nakanishi , Shinji Inoue , Hirokazu Sou
发明人： Takuji Maeda , Masahiro Nakanishi , Shinji Inoue , Hirokazu Sou
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： An information recording medium such as a semiconductor memory card includes a first semiconductor memory having a first recording area accessed by a relatively small access unit and storing file system management information, a second semiconductor memory having a second recording area accessed by a relatively large access unit and storing file data (file entity data), and a controller for controlling the first and second semiconductor memories. The information recording medium selects either one of recording areas of the first and second semiconductor memories depending on the data type, and writes data into the selected recording area.
摘要翻译：诸如半导体存储卡的信息记录介质包括具有由相对较小的存取单元访问的第一记录区和存储文件系统管理信息的第一半导体存储器，具有由相对大的访问单元访问的第二记录区的第二半导体存储器并存储文件数据（文件实体数据）以及用于控制第一和第二半导体存储器的控制器。信息记录介质根据数据类型选择第一和第二半导体存储器的记录区域中的一个，并将数据写入所选择的记录区域。

26. 发明申请

US20110264842A1 MEMORY CONTROLLER, NONVOLATILE MEMORY DEVICE, ACCESS DEVICE, AND NONVOLATILE MEMORY SYSTEM 审中-公开
标题翻译：存储器控制器，非易失性存储器件，访问器件和非易失性存储器系统
公开(公告)号：US20110264842A1
公开(公告)日：2011-10-27
申请号：US12527882
申请日：2008-06-12
申请人： Masahiro Nakanishi , Takuji Maeda
发明人： Masahiro Nakanishi , Takuji Maeda
IPC分类号： G06F12/02
CPC分类号： G11C16/349
摘要： A lifetime parameter generation part 128 generates a lifetime parameter related to a lifetime of a nonvolatile memory device 110. When the remaining lifetime has become short, a mode switching part 129 switches a read-write mode of a read-write control part 124 from a rewritable mode to a write once mode and notifies an access device 100 that the mode has been switched to the write once mode. Thus, a user can easily recognize the moment when an apparatus having the built-in nonvolatile memory cannot be used, and, immediately before the lifetime is over, the mode can be automatically switched to the write once mode in which writing can be carried out only once.
摘要翻译：寿命参数生成部分128生成与非易失性存储器件110的寿命有关的寿命参数。当剩余寿命变短时，模式切换部分129将读写控制部分124的读写模式从可重写模式到一次写入模式，并且将访问设备100通知模式已被切换到一次写入模式。因此，用户可以容易地识别具有内置非易失性存储器的装置不能使用的时刻，并且在生命周期结束之前，该模式可以自动切换到可以执行写入的一次写入模式只有一次。

27. 发明申请

US20110022807A1 WRITE ONCE RECORDING DEVICE 有权
标题翻译：一般记录设备
公开(公告)号：US20110022807A1
公开(公告)日：2011-01-27
申请号：US12517844
申请日：2007-12-10
申请人： Takuji Maeda , Shinji Inoue , Hiroki Etoh , Masahiro Nakamura , Makoto Ochi , Yukiko Okamoto , Masahiro Nakanishi
发明人： Takuji Maeda , Shinji Inoue , Hiroki Etoh , Masahiro Nakamura , Makoto Ochi , Yukiko Okamoto , Masahiro Nakanishi
IPC分类号： G06F12/00
CPC分类号： G06F3/0643 , G06F3/0619 , G06F3/0679
摘要： An access device 1 internally includes a logical-physical empty capacity management part 16 for obtaining information of a remaining capacity on a write once memory from a write once recording device 2A. In addition, the write once recording device 2A internally includes a physical empty capacity management part 27 for managing a remaining capacity on the write once memory and notifying the access device of the capacity. Prior to recording of file data, the access device 1 can know an accurate remaining capacity of the write once recording device by: obtaining a remaining capacity of the write once memory from the write once recording device 2A; and comparing the capacity with a remaining capacity on an FAT to decide an actually-recordable remaining capacity for file data.
摘要翻译：访问装置1内部包括逻辑物理空容量管理部分16，用于从一次写入记录装置2A获得一次写入存储器上的剩余容量的信息。此外，一次写入记录装置2A内部包括用于管理一次写入存储器上的剩余容量的物理空容量管理部27，并通知存取装置的容量。在记录文件数据之前，访问装置1可以通过以下方式知道一次写入记录装置的准确剩余容量：从一次写入记录装置2A获得一次写入存储器的剩余容量; 并且将容量与FAT上的剩余容量进行比较，以确定文件数据的实际可记录的剩余容量。

28. 发明申请

US20060129749A1 Nonvolatile memory system, nonvolatile memory device, memory controller, access device, and method for controlling nonvolatile memory device 有权
标题翻译：非易失性存储器系统，非易失性存储器件，存储器控制器，存取器件以及用于控制非易失性存储器件的方法
公开(公告)号：US20060129749A1
公开(公告)日：2006-06-15
申请号：US11280810
申请日：2005-11-17
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
IPC分类号： G06F12/00
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： When a file system control part 155A writes file data into a main memory 142, a file can be easily written continuously and the number of file copy can be decreased at updating a directory entry by writing the file data and a directory entry into different allocation units. In this manner, when using a nonvolatile memory in which physical block size as an erase unit is larger than cluster size, the write performance can be enhanced.
摘要翻译：当文件系统控制部分155A将文件数据写入主存储器142时，可以容易地连续地写入文件，并且可以通过将文件数据和目录条目写入不同的分配来更新目录条目来减少文件拷贝的数量单位。以这种方式，当使用物理块大小作为擦除单位的非易失性存储器大于簇大小时，可以提高写入性能。

29. 发明申请

US20050235098A1 Semiconductor memory device, memory controller and memory access device 有权
标题翻译：半导体存储器件，存储器控制器和存储器存取器件
公开(公告)号：US20050235098A1
公开(公告)日：2005-10-20
申请号：US11048046
申请日：2005-02-02
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
IPC分类号： G06K19/07 , G06F12/00 , G06F12/02 , G06F12/06 , G06K17/00
CPC分类号： G06F12/0246 , G11C2029/0409
摘要： A semiconductor memory card 1 includes a user data area 21 and a management information area 22, in a data storing unit 2. According to a writing test command from a memory access device 6, a memory controller 3 writes data into a user data storing area and measures the writing rate, and transmits the measurement result to the memory access device 6 via a host interface unit 4. Thereby, the memory access device 6 can recognize the writing rate.
摘要翻译：在数据存储单元2中，半导体存储卡1包括用户数据区21和管理信息区22。根据来自存储器访问装置6的写入测试命令，存储器控制器3将数据写入用户数据存储区域并测量写入速率，并且经由主机接口单元4将测量结果发送到存储器访问设备6。由此，存储器访问装置6能够识别写入速度。

30. 发明授权

US08527691B2 Nonvolatile memory device and nonvolatile memory system with fast boot capability 有权
标题翻译：非易失性存储器件和具有快速启动能力的非易失性存储器系统
公开(公告)号：US08527691B2
公开(公告)日：2013-09-03
申请号：US12665064
申请日：2008-07-30
申请人： Toshiyuki Honda , Masayuki Toyama , Masahiro Nakanishi
发明人： Toshiyuki Honda , Masayuki Toyama , Masahiro Nakanishi
IPC分类号： G06F13/00
CPC分类号： G06F9/4403 , G06F12/0246 , G06F2212/7201
摘要： A nonvolatile storage device includes a controller and a nonvolatile memory. The controller has: a logical-physical address conversion part for converting a logical address designated by a host device into a physical address; and a boot code address conversion part for converting boot code address information designated by the host device into a physical address. After the power-on and before the logical-physical address conversion part becomes usable, a boot code is read from a part of region which can be accessed by designating a logical address from the host device by designating the boot code address information from the outside. Thus, it is possible to rapidly start the nonvolatile memory system after the power-on. In the state where the logical-physical address conversion part can be used, data-reading and data-writing are carried out by designating a logical address from the host device.
摘要翻译：非易失性存储装置包括控制器和非易失性存储器。控制器具有：逻辑 - 物理地址转换部分，用于将由主机设备指定的逻辑地址转换成物理地址; 以及引导代码地址转换部分，用于将由主机设备指定的引导代码地址信息转换为物理地址。在上电之后并且在逻辑 - 物理地址转换部分变得可用之前，通过从外部指定引导代码地址信息从主机设备指定逻辑地址可以访问的区域的一部分读取引导代码。因此，可以在通电之后快速启动非易失性存储器系统。在可以使用逻辑 - 物理地址转换部分的状态下，通过从主机设备指定逻辑地址来执行数据读取和数据写入。

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