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21. 发明申请

US20090243015A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090243015A1
公开(公告)日：2009-10-01
申请号：US12398520
申请日：2009-03-05
申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
发明人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
IPC分类号： H01L31/0203 , H01L31/18
CPC分类号： H01L31/0203 , H01L2224/32245 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/1815 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在包括光电二极管的基板的上表面上形成树脂层，使得树脂层不覆盖光电二极管的光接收区域; 在所述树脂层中形成至少一个沟槽以包围所述光接收区域; 然后通过将基板加载到模具中并用模制树脂填充模具来模制密封光电二极管。

22. 发明授权

US08525285B2 Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture 有权
标题翻译：具有凹槽结构以防止在制造期间模制树脂在光电二极管的光接收区域上溢出的半导体器件
公开(公告)号：US08525285B2
公开(公告)日：2013-09-03
申请号：US13408368
申请日：2012-02-29
申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
发明人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
IPC分类号： H01L31/0203
CPC分类号： H01L31/0203 , H01L2224/32245 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/1815 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device having a substrate including a photodiode; a resin layer formed on an upper surface of the substrate, the resin layer not covering a light receiving region of the photodiode, the resin layer including at least one groove surrounding the light receiving region; and a molding resin portion formed by mold-sealing the photodiode with the resin layer thereon so as not to cover the light receiving region.
摘要翻译：一种具有包括光电二极管的衬底的半导体器件; 树脂层，形成在所述基板的上表面上，所述树脂层不覆盖所述光电二极管的受光区域，所述树脂层包括围绕所述受光区域的至少一个沟槽; 以及通过将光电二极管与其上的树脂层模制密封而不覆盖光接收区域而形成的模制树脂部分。

23. 发明授权

US6099945A Atomic mask and method of patterning a substrate with the atomic mask 失效
标题翻译：原子掩模和用原子掩模图案化衬底的方法
公开(公告)号：US6099945A
公开(公告)日：2000-08-08
申请号：US834030
申请日：1997-04-11
申请人： Takashi Yokoyama , Masakazu Baba
发明人： Takashi Yokoyama , Masakazu Baba
IPC分类号： G01N37/00 , G01Q60/00 , B32B27/20 , G01Q60/10 , G01Q80/00 , G11B9/14 , H01L21/22 , H01L21/302 , H01L29/06 , B32B9/00
CPC分类号： B32B27/20 , Y10T428/24917 , Y10T428/24926 , Y10T428/265 , Y10T428/31678
摘要： There is provided a method of patterning a substrate with an atomic mask having a mask substrate and first atoms adsorbed on the mask substrate, the first atoms forming a mask pattern having a one-atomic thickness, including the steps, in sequence, of (a) depositing adatoms over a surface of a substrate to be patterned, the adatoms having low reactivity with second atoms of which the substrate is composed, and (b) placed the atomic mask close to the substrate in such a distance that the first atoms form a chemical bond with the adatoms, so that adatoms located nearest to the first atoms are desorbed out of the substrate to form a pattern on the substrate, the pattern being defined as an area where none of the adatoms exists. In accordance with the above mentioned method, it is possible to form a pattern on the sub-nanometer or nanometer order with high accuracy and in a short period of time, and it is also possible to repeatedly form the same pattern by using the atomic mask.
摘要翻译：提供了一种利用具有掩模衬底的原子掩模和吸附在掩模衬底上的第一原子的原子掩模图案化衬底的方法，第一原子形成具有一个原子厚度的掩模图案，其包括以下步骤：（a ）在待图案化的衬底的表面上沉积吸附原子，所述吸附原子与其构成衬底的第二原子具有低反应性，和（b）将原子掩模放置在与第一原子形成与吸附原子的化学键，使得位于最靠近第一原子的吸附原子从衬底中解吸出来，以在衬底上形成图案，该图案被定义为不存在吸收原子的区域。根据上述方法，可以以高精度和短时间在亚纳米或纳米级上形成图案，并且还可以通过使用原子掩模重复形成相同的图案。

24. 发明申请

US20120161271A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161271A1
公开(公告)日：2012-06-28
申请号：US13408368
申请日：2012-02-29
申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
发明人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
IPC分类号： H01L31/0203
CPC分类号： H01L31/0203 , H01L2224/32245 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/1815 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device having a substrate including a photodiode; a resin layer formed on an upper surface of the substrate, the resin layer not covering a light receiving region of the photodiode, the resin layer including at least one groove surrounding the light receiving region; and a molding resin portion formed by mold-sealing the photodiode with the resin layer thereon so as not to cover the light receiving region.
摘要翻译：一种具有包括光电二极管的衬底的半导体器件; 树脂层，形成在所述基板的上表面上，所述树脂层不覆盖所述光电二极管的受光区域，所述树脂层包括围绕所述受光区域的至少一个沟槽; 以及通过将光电二极管与其上的树脂层模制密封而不覆盖光接收区域而形成的模制树脂部分。

25. 发明授权

US06755953B2 Method for forming ordered structure of fine metal particles 失效
标题翻译：用于形成金属颗粒有序结构的方法
公开(公告)号：US06755953B2
公开(公告)日：2004-06-29
申请号：US10149547
申请日：2002-06-12
申请人： Masakazu Baba
发明人： Masakazu Baba
IPC分类号： C25D100
CPC分类号： C25D13/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L51/0595
摘要： In order to preventing thiol-coated metal particles from being liberated from a self-aligning membrane on a substrate during coating the metal particles deposited on the self-aligning membrane with thiol molecules, this invention provides a process for forming a metal particle ordered structure wherein a voltage is applied on the substrate for preventing the metal particles from being liberated from the self-aligning membrane during coating the metal particles deposited on the self-aligning membrane on the substrate with thiol molecules.
摘要翻译：为了防止硫醇涂覆的金属颗粒在用硫醇分子涂覆在自对准膜上沉积的金属颗粒时在基板上从自对准膜释放出来，本发明提供了形成金属颗粒有序结构的方法，其中在基板上施加电压，以防止在用硫醇分子涂布沉积在基板上的自对准膜上的金属颗粒时，从自对准膜释放金属颗粒。

26. 发明授权

US08153467B2 Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture and method for manufacturing same 有权
标题翻译：具有凹槽结构的半导体器件，用于防止在制造期间模制树脂在光电二极管的光接收区域上溢出及其制造方法
公开(公告)号：US08153467B2
公开(公告)日：2012-04-10
申请号：US12398520
申请日：2009-03-05
申请人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
发明人： Shuji Yoneda , Masato Oishi , Tamotsu Shinohara , Shinji Watanabe , Koji Miyata , Seiji Fukae , Kenji Yamauchi , Yoichi Goto , Masakazu Baba
IPC分类号： H01L21/00
CPC分类号： H01L31/0203 , H01L2224/32245 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/1815 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A method for manufacturing a semiconductor device, includes the steps of: forming a resin layer on an upper surface of a substrate including a photodiode such that the resin layer does not cover a light receiving region of the photodiode; forming at least one groove in the resin layer so as to surround the light receiving region; and subsequently mold-sealing the photodiode by loading the substrate into a mold and filling the mold with a molding resin.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在包括光电二极管的基板的上表面上形成树脂层，使得树脂层不覆盖光电二极管的光接收区域; 在所述树脂层中形成至少一个凹槽以围绕所述光接收区域; 然后通过将基板加载到模具中并用模制树脂填充模具来模制密封光电二极管。

27. 发明授权

US06331238B1 Method of patterning a substrate with an atomic mask 失效
标题翻译：原子掩模和用原子掩模图案化衬底的方法
公开(公告)号：US06331238B1
公开(公告)日：2001-12-18
申请号：US09602061
申请日：2000-06-23
申请人： Takashi Yokoyama , Masakazu Baba
发明人： Takashi Yokoyama , Masakazu Baba
IPC分类号： C25D502
CPC分类号： B32B27/20 , Y10T428/24917 , Y10T428/24926 , Y10T428/265 , Y10T428/31678
摘要： There is provided a method of patterning a substrate with an atomic mask having a mask substrate and first atoms adsorbed on the mask substrate, the first atoms forming a mask pattern having a one-atomic thickness, including the steps, in sequence, of (a) depositing adatoms over a surface of a substrate to be patterned, the adatoms having low reactivity with second atoms of which the substrate is composed, and (b) putting the atomic mask close to the substrate in such a distance that the first atoms make a chemical bond with the adatoms, so that adatoms located nearest to the first atoms are desorbed out of the substrate to form a pattern on the substrate, the pattern being defined as an area where none of the adatoms exists. In accordance with the above mentioned method, it is possible to form a pattern on the sub-nanometer or nanometer order with high accuracy and in a short period of time, and it is also possible to repeatedly form the same pattern by using the atomic mask.
摘要翻译：提供了一种利用具有掩模衬底的原子掩模和吸附在掩模衬底上的第一原子的原子掩模图案化衬底的方法，第一原子形成具有一个原子厚度的掩模图案，其包括以下步骤：（a ）在待图案化的衬底的表面上沉积吸附原子，所述原子与所述衬底的第二原子具有低反应性，和（b）将所述原子掩模放置在所述衬底附近，使得所述第一原子形成与吸附原子的化学键，使得位于最靠近第一原子的吸附原子从衬底中解吸出来，以在衬底上形成图案，该图案被定义为不存在吸收原子的区域。根据上述方法，可以以高精度和短时间在亚纳米或纳米级上形成图案，并且还可以通过使用原子掩模重复形成相同的图案。

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