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    • 22. 发明授权
    • Probe arrangement
    • 探测安排
    • US09146138B2
    • 2015-09-29
    • US13109065
    • 2011-05-17
    • Michael HankoRené KündscherTorsten Pechstein
    • Michael HankoRené KündscherTorsten Pechstein
    • G01D11/24G01N27/333
    • G01D11/245G01N27/333
    • A probe arrangement, in the case of which a probe is arranged within a tubular housing, wherein the tubular housing has at least one process window open to the process medium, and at least one functional element is secured on the probe and surrounded by the process medium. In order to suppress a taking along of the process medium during transfer of the functional element from the measured medium into a rinsing chamber, the tubular housing includes at least one treatment window open opposite the probe (3), preferably for washing, rinsing and/or calibrating the functional element, wherein the functional element is movable between the process window and the treatment window, and, during the measuring in the process medium, the at least one functional element is arranged approximately coincident with the at least one process window of the housing.
    • 探针布置,在探针布置在管状壳体内的情况下,其中管状壳体具有至少一个对加工介质开放的处理窗口,并且至少一个功能元件固定在探针上并被该工艺包围 中。 为了在将功能元件从测量介质转移到漂洗室中时抑制沿着处理介质的吸收,管状壳体包括与探针(3)相对开放的至少一个处理窗口,优选用于洗涤,漂洗和/ 或校准所述功能元件,其中所述功能元件可在所述处理窗口和所述处理窗口之间移动,并且在所述处理介质中的所述测量期间,所述至少一个功能元件被布置为与所述至少一个工艺窗口 住房。
    • 24. 发明授权
    • Method for operating an ISFET sensor
    • 操作ISFET传感器的方法
    • US08668822B2
    • 2014-03-11
    • US12971050
    • 2010-12-17
    • Torsten Pechstein
    • Torsten Pechstein
    • G01N27/414G01N27/333
    • G01N27/227
    • A method for operating an ion-sensitive sensor with a measurement circuit which includes an ion-sensitive electrolyte-insulator-semiconductor structure (EIS); wherein the measurement circuit is embodied to issue an output signal which is dependent on ion concentration, especially a pH value, of a measured liquid; and wherein the method comprises the steps of: introducing the ion-sensitive electrolyte-insulator-semiconductor structure into a measured liquid; accelerating charging processes in the region of an insulator layer of the ion-sensitive electrolyte-insulator-semiconductor structure by operating the sensor over a predetermined time span at least a first working point; and dynamically adapting the working point to set a second working point, and registering and processing the output signal of the measurement circuit at the second working point.
    • 一种使用包括离子敏感电解质 - 绝缘体 - 半导体结构(EIS)的测量电路操作离子敏感传感器的方法; 其中所述测量电路被实施为发出取决于测量液体的离子浓度,特别是pH值的输出信号; 并且其中所述方法包括以下步骤:将所述离子敏感的电解质 - 绝缘体半导体结构引入测量的液体中; 通过在至少第一工作点的预定时间间隔内操作所述传感器来加速所述离子敏感电解质 - 绝缘体 - 半导体结构的绝缘体区域的充电过程; 动态调整工作点以设定第二工作点,并在第二工作点登记和处理测量电路的输出信号。
    • 25. 发明授权
    • Inductive conductivity sensor
    • 感应电导率传感器
    • US07965167B2
    • 2011-06-21
    • US12010915
    • 2008-01-31
    • Marco VölkerAndreas EberheimTorsten Pechstein
    • Marco VölkerAndreas EberheimTorsten Pechstein
    • H01F27/28
    • G01N27/025
    • A conductivity sensor for measuring conductivity of a medium surrounding the conductivity sensor includes a first toroidal coil bounding a medium-receiving passageway and serving for inducing an electrical current in the medium, and a second toroidal coil also bounding the passageway and serving for registering a magnetic field produced by the electrical current. At least one of the toroidal coils has a plurality of first conductor segments, which extend in a plane of a multi-ply circuit board, a plurality of second conductor segments, which extend in a second plane of the circuit board, and a plurality of through-contacts, which connect the first conductor segments with the second conductor segments, wherein the first conductor segments, the second conductor segments and the through-contacts form, together, the windings of a toroidal coil.
    • 用于测量围绕电导率传感器的介质的导电性的电导率传感器包括限定介质接收通道并用于在介质中感应电流的第一环形线圈,以及也包围该通道并用于配准磁性的第二环形线圈 电场产生的电场。 环形线圈中的至少一个具有在多层电路板的平面中延伸的多个第一导体段,在电路板的第二平面中延伸的多个第二导体段,以及多个 通孔,其将第一导体段与第二导体段连接,其中第一导体段,第二导体段和贯通触点一起形成环形线圈的绕组。
    • 26. 发明授权
    • Semiconductor sensor having a front-side contact zone
    • 具有前侧接触区域的半导体传感器
    • US07799606B2
    • 2010-09-21
    • US10539799
    • 2003-12-06
    • Torsten PechsteinRobert Scholz
    • Torsten PechsteinRobert Scholz
    • H01L21/00G01N27/26G01N21/00
    • G01N27/414H01L2924/0002H01L2924/00
    • An ion-sensitive sensor arrangement includes: a semiconductor chip having a first surface, which has a media-sensitive region and at least one, first, electrical contact surface; and a support having a second surface, which faces the first surface of the semiconductor chip. An opening is provided, which aligns with the sensitive region, and at least one, second, electrical contact surface, which overlaps, or aligns with, the at least one, first, electrical contact surface. Between the support and the semiconductor chip, a preferably elastic, anisotropic conductor is arranged, which produces a conducting connection between the at least one, first, contact surface and the at least one, second, contact surface, and which has a traversing opening, which aligns with the opening, so that the sensitive region of the semiconductor chip can be contacted through the opening by an analyte. The preferably elastic, anisotropic conductor seals the region outside of the opening against contamination with the analyte.
    • 离子敏感传感器装置包括:具有第一表面的半导体芯片,其具有介质敏感区域和至少一个第一电接触表面; 以及具有面向半导体芯片的第一表面的第二表面的支撑件。 提供与敏感区域对准的开口以及与至少一个第一电接触表面重叠或对准的至少一个第二电接触表面。 在支撑件和半导体芯片之间布置优选弹性的各向异性导体,其在至少一个第一接触表面与至少一个第二接触表面之间产生导电连接,并具有横向开口, 其与开口对准,使得半导体芯片的敏感区域可以通过分析物通过开口接触。 优选弹性的各向异性导体密封开口以外的区域,防止分析物的污染。
    • 28. 发明授权
    • Potentiometric sensor with status monitoring
    • 具有状态监测的电位传感器
    • US07615140B2
    • 2009-11-10
    • US11643834
    • 2006-12-22
    • Torsten PechsteinLars Kirsten
    • Torsten PechsteinLars Kirsten
    • G01N27/26
    • G01N27/4148
    • A potentiometric sensor for measuring a potentiometric variable of a medium comprises an ISFET whose gate region exhibits an ion-sensitive surface which can be exposed to the medium and which outputs an output signal that depends on the concentration of the ions at the ion-sensitive surface of the gate region. An evaluation circuit with a measuring input to which the output signal of the ISFET is applied is included, whereby the evaluation circuit is designed to output a measured value for the potentiometric variable, depending on the output signal. Also included is a measuring resistor which is arranged between the output of the ISFET and the input of the evaluation circuit, a monitoring circuit to determine the voltage drop over the measuring resistor, and a bridge section that is parallel to the measuring resistor to bridge the measuring resistor whereby the bridge section exhibits a switch with which the bridge section can be opened or closed.
    • 用于测量介质的电位变量的电位传感器包括其栅极区域表现出可暴露于介质的离子敏感表面的ISFET,并且其输出取决于离子敏感表面处的离子浓度的输出信号 的门区域。 包括具有施加ISFET的输出信号的测量输入的评估电路,由此评估电路被设计为根据输出信号输出电位变量的测量值。 还包括一个测量电阻器,它被布置在ISFET的输出端和评估电路的输入端之间,一个监测电路,用于确定测量电阻器上的电压降;以及一个与测量电阻器并联的桥接器, 测量电阻器,由此桥接部分表现出可以打开或关闭桥接部分的开关。
    • 29. 发明申请
    • Method for Function Monitoring of a Sensor
    • 传感器功能监控方法
    • US20090132194A1
    • 2009-05-21
    • US11793824
    • 2005-11-29
    • Axel TischendorfHermann StraubTorsten Pechstein
    • Axel TischendorfHermann StraubTorsten Pechstein
    • G01D18/00
    • G01N27/4163G01D3/08
    • A method for monitoring sensor function comprises the following steps: repeatedly acquiring data records comprising sensor-specific calibration data; storing the acquired data records comprising sensor-specific calibration data; analyzing changes of the calibration data over time using the stored data records; and determining time or time weighted with a load factor until the next calibration is due, using at least the changes of the calibration data over time. The resulting time or the determined time weighted with a load factor can, for example, be output in suitable form directly after determination, thereby allowing for a long-term planning of calibration, and/or it can be stored as a date or a remaining time. A comparison with a time signal or a count-down of the remaining time allows at the due date to output a request, or prompt, signal, optionally with a desired lead time.
    • 一种监测传感器功能的方法,包括以下步骤:重复获取包含传感器特定校准数据的数据记录; 存储所获取的包括传感器特定校准数据的数据记录; 使用存储的数据记录分析校准数据随时间的变化; 以及确定用负载因子加权的时间或时间,直到下一个校准到期,至少使用校准数据随时间的变化。 所得到的时间或以负载因子加权的确定时间可以例如在确定之后直接以适当的形式输出,从而允许长期规划校准,和/或可以将其存储为日期或剩余的 时间。 与时间信号的比较或剩余时间的倒计时允许在到期日期输出请求或提示信号,可选地具有期望的交货时间。
    • 30. 发明申请
    • Sensor Arrangement With A Plurality Of Potentiometric Sensors
    • 传感器布置与多种电位传感器
    • US20070273395A1
    • 2007-11-29
    • US10578865
    • 2004-10-28
    • Torsten PechsteinWolfgang BabelThomas Steckenreiter
    • Torsten PechsteinWolfgang BabelThomas Steckenreiter
    • G01R27/00
    • G01N27/414
    • The sensor arrangement includes: a least two sample chambers; at least two potentiometric FET-sensors, especially ISFET-sensors or ChemFET-sensors, having, in each case, a sensitive surface section, wherein each sensitive surface section lies in flow connection with its one of the sample chambers; and a reference cell having a reference medium for providing a reference potential, wherein the sample chambers are connected with the reference medium via an electrolyte bridge. The reference cell has, preferably, a potentiometric reference-FET-sensor for providing a reference potential, which is registered against the pseudo-reference-potential of a redox electrode. The potentials Udiff1, Udiff2, . . . UdiffN of N FET-sensors in the sample chambers are determined against the pseudo-reference-potential, and the measured-variable-relevant, potential differences are determined, in each case, by difference formation between the pertinent potential and the reference potential—thus, in the case of pH, according to the formulas UpH1. . . N=Udiff1. . . N−Udiffref.
    • 传感器装置包括:至少两个样品室; 至少两个电位计FET传感器,特别是ISFET传感器或ChemFET传感器,在每种情况下都具有敏感表面部分,其中每个敏感表面部分与其一个样品室流动连接; 以及具有用于提供参考电位的参考介质的参考单元,其中所述样品室通过电解质桥连接到所述参考介质。 参考单元优选地具有用于提供与氧化还原电极的伪参考电位相对应的参考电位的电位参考FET传感器。 电位U diff1,U2 diff2,..., 。 。 根据伪参考电位来确定样品室中的N个FET传感器的U N diffN ,并且测量的可变相关电位差在每种情况下通过差分形成来确定 因此,在pH的情况下,根据公式<?in-line-formula description =“In-line Formulas”end =“lead”?> U 。 。 。 N = U diff1 。 。 。 N-U Diffref <?in-line-formula description =“In-line Formulas”end =“tail”?>