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    • 21. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07952100B2
    • 2011-05-31
    • US11898749
    • 2007-09-14
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • H01L27/14
    • H01L27/1266H01L27/124H01L29/78603H01L29/78606
    • An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
    • 本发明的目的是提供一种半导体器件,其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时,诸如晶体管的元件的损伤也减小。 半导体器件包括:设置在基板上的沟道形成区域和杂质区域的半导体膜,设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜,设置成覆盖的第一层间绝缘膜 所述第一导电膜,设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜,设置在所述第二导电膜上的第二层间绝缘膜,以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜,以通过开口与杂质区电连接。
    • 24. 发明授权
    • Display device
    • 显示设备
    • US08643635B2
    • 2014-02-04
    • US11964564
    • 2007-12-26
    • Ryo ArasawaHiroyuki Miyake
    • Ryo ArasawaHiroyuki Miyake
    • G09G5/00
    • G09G5/00G09G3/20G09G3/3258G09G2300/0857G09G2330/021G09G2330/028
    • A display device is driven through no wire cable such as an FPC, and a display image is continuously held for a certain period of time by storing an image signal received from a wireless communication device so that the display image can be held even when the display device is out of communication range with the wireless communication device. A display device includes at least a pixel circuit having an SRAM (static random access memory) circuit, a circuit which controls the pixel circuit, an antenna circuit, a circuit which generates a demodulation signal, a circuit which rectifies a wireless signal, a circuit which generates first voltage, a charge circuit which stores second voltage, a charge control circuit, a voltage supply control circuit, and a circuit which controls the charge control circuit and the voltage supply control circuit.
    • 显示装置不通过FPC等线缆驱动,并且通过存储从无线通信装置接收的图像信号,连续保持显示图像一定时间,使得即使在显示器 设备与无线通信设备不在通信范围内。 显示装置至少包括具有SRAM(静态随机存取存储器)电路的像素电路,控制像素电路的电路,天线电路,产生解调信号的电路,校正无线信号的电路,电路 其产生第一电压,存储第二电压的充电电路,充电控制电路,电压供给控制电路和控制充电控制电路和电压供给控制电路的电路。
    • 25. 发明授权
    • Display device and electronic device
    • 显示设备和电子设备
    • US08599347B2
    • 2013-12-03
    • US13117601
    • 2011-05-27
    • Ryo ArasawaHiroyuki Miyake
    • Ryo ArasawaHiroyuki Miyake
    • G02F1/1343
    • G02F1/136286G09G3/3225G09G3/3648G09G2300/0426
    • An object is to provide a display device in which a difference in load capacitance between wirings is reduced in the case where different signals are supplied to plural pixels at the same timing with use of plural wirings; thus, deviation in the grayscale and/or signal delay can be reduced. The display device includes first to N-th (N is a natural number of 3 or larger) data lines for supplying different video signals; and a pixel including a selection transistor connected to one of the first to N-th data lines. The first to N-th data lines intersect with each other so that one of the first to N-th data lines is provided closest to one terminal of the selection transistor and connected to the one terminal of the selection transistor.
    • 本发明的目的是提供一种显示装置,其中在使用多个布线的同一时刻将不同的信号提供给多个像素的情况下,布线之间的负载电容的差减小; 因此,可以降低灰度和/或信号延迟的偏差。 显示装置包括用于提供不同视频信号的第一至第N(N为3或更大的自然数)数据线; 以及包括连接到第一至第N数据线之一的选择晶体管的像素。 第一至第N数据线彼此相交,使得第一至第N数据线之一最靠近选择晶体管的一个端子提供并连接到选择晶体管的一个端子。
    • 28. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20080073647A1
    • 2008-03-27
    • US11898749
    • 2007-09-14
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • H01L29/04H01L29/786
    • H01L27/1266H01L27/124H01L29/78603H01L29/78606
    • An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
    • 本发明的目的是提供一种半导体器件,其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时,诸如晶体管的元件的损伤也减小。 半导体器件包括:设置在基板上的沟道形成区域和杂质区域的半导体膜,设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜,设置成覆盖的第一层间绝缘膜 所述第一导电膜,设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜,设置在所述第二导电膜上的第二层间绝缘膜,以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜,以通过开口与杂质区电连接。