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21. 发明申请

US20080204938A1 Thin-Film Magnetic Head Having Antistatic Means for Protective Coat of Element End 有权
标题翻译：具有防止元件端部防护装置的薄膜磁头
公开(公告)号：US20080204938A1
公开(公告)日：2008-08-28
申请号：US11678913
申请日：2007-02-26
申请人： Kei Hirata , Takeo Kagami , Takumi Uesugi , Tetsuro Sasaki
发明人： Kei Hirata , Takeo Kagami , Takumi Uesugi , Tetsuro Sasaki
IPC分类号： G11B5/48
CPC分类号： G11B5/3106 , G11B5/3929 , G11B5/40
摘要： Provided is a thin-film magnetic head in which a noise due to the voltage potential difference between the read head element and the protective coat surface is suppressed. The thin-film magnetic head comprises: a read head element, one end surface of the read head element reaching an head end surface on the ABS side; a protective coat formed on the head end surface in such a way to cover at least the one end surface of the read head element; and at least one antistatic means for preventing the protective coat from being electrostatically charged, formed on/above the element formation surface, one end surface of the at least one antistatic means reaching the head end surface, the protective coat covering a portion, not the whole, of the one end surface of the at least one antistatic means on the head end surface.
摘要翻译：提供了一种薄膜磁头，其中抑制了读头元件和保护涂层表面之间的电压电位差引起的噪声。薄膜磁头包括：读头元件，读头元件的一个端面到达ABS侧的头端面; 形成在头端表面上的保护涂层，以至少覆盖读头元件的一个端面; 以及至少一个抗静电装置，用于防止保护涂层被静电充电，形成在元件形成表面上或上方，至少一个抗静电装置的一个端面到达头端表面，保护涂层覆盖一部分，而不是在头端表面上的至少一个抗静电装置的一个端面的整体。

22. 发明授权

US06478884B2 Method for manufacturing thin-film magnetic head with spin valve magnetoresistive sensor 有权
标题翻译：用自旋阀磁阻传感器制造薄膜磁头的方法
公开(公告)号：US06478884B2
公开(公告)日：2002-11-12
申请号：US09865718
申请日：2001-05-29
申请人： Koji Shimazawa , Manabu Ohta , Tetsuro Sasaki
发明人： Koji Shimazawa , Manabu Ohta , Tetsuro Sasaki
IPC分类号： C21D104
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , H01F41/304 , Y10T29/49034
摘要： A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of times.
摘要翻译：具有自旋阀效应MR读取传感器的薄膜磁头的制造方法包括在自旋阀效应MR传感器中牢固地固定钉扎磁化方向的温度退火步骤。温度退火步骤多次执行。

23. 发明授权

US06294911B1 Measurement method of magnetization direction of magnetoresistive effect devices and measurement apparatus based on the method of TDK corporation 有权
标题翻译：基于该方法的磁阻效应器件和测量装置的磁化方向的测量方法
公开(公告)号：US06294911B1
公开(公告)日：2001-09-25
申请号：US09263778
申请日：1999-03-05
申请人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
发明人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/455 , G11B2005/0016
摘要： A method of measuring magnetization direction of a MR device, includes a first step of obtaining both maximum electrical resistance values under positive and negative applied measurement magnetic fields onto the MR device biased by anti-ferromagnetic material, a second step of relatively rotating a basic axis of the MR device against a direction of the applied measurement magnetic field until both the maximum resistance values become comparatively the same, and a third step of obtaining a relative rotation angle between the basic axis of the MR device and the direction of the applied measurement magnetic field.
摘要翻译：一种测量MR器件的磁化方向的方法包括：在由反铁磁材料偏置的MR器件上的正和负施加的测量磁场下获得最大电阻值的第一步骤，相对旋转基本轴线的第二步骤的MR装置相对于所施加的测量磁场的方向，直到最大电阻值变得相对相同，并且获得MR装置的基本轴线与施加的测量磁体的方向之间的相对旋转角度的第三步骤领域。

24. 发明授权

US6093444A Magnetoresistive transducer with spin-valve structure and manufacturing method of the same 失效
标题翻译：具有自旋阀结构的磁阻传感器及其制造方法相同
公开(公告)号：US6093444A
公开(公告)日：2000-07-25
申请号：US998695
申请日：1997-12-29
申请人： Daisuke Miyauchi , Tetsuro Sasaki , Eiichi Omata
发明人： Daisuke Miyauchi , Tetsuro Sasaki , Eiichi Omata
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/39 , G11B5/3903 , H01F41/302 , G11B2005/3996 , G11B5/3163
摘要： A MR transducer with a spin-valve structure formed on a substrate. The spin-valve structure has at least an antiferromagnetic material layer made of a NiMn alloy, a first ferromagnetic material layer, a nonmagnetic material layer and a second ferromagnetic material layer sequentially deposited on the substrate in this order.
摘要翻译：具有形成在基板上的自旋阀结构的MR换能器。自旋阀结构至少具有由NiMn合金制成的反铁磁材料层，第一铁磁材料层，非磁性材料层和第二铁磁材料层，其顺序地沉积在基板上。

25. 发明授权

US5852533A Magnetoresistance effect transducer element with continuous central active area 失效
标题翻译：具有连续中心有源面积的磁阻效应传感器元件
公开(公告)号：US5852533A
公开(公告)日：1998-12-22
申请号：US686717
申请日：1996-07-26
申请人： Daisuke Miyauchi , Eiichi Omata , Hajime Amano , Tetsuro Sasaki , Yasufumi Uno
发明人： Daisuke Miyauchi , Eiichi Omata , Hajime Amano , Tetsuro Sasaki , Yasufumi Uno
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996
摘要： The present invention is directed to a magnetic transducer element with outstanding productivity, with which the track width can be defined to a high degree of accuracy and required magnetic characteristics can be reliably imposed upon the central active area. Laminated films which generate a magnetoresistance effect, a magnetic domain control film, which applies a magnetic bias to the laminated films and a pair of lead conductor films are provided. The laminated films and the magnetic domain control film are laminated to each other to constitute a central active area. The lead conductor films terminate the side end surfaces of the central active area at the two sides in direction running at a right angle to direction of the lamination of the central active area.
摘要翻译：本发明涉及一种具有出色的生产率的磁换能器元件，可以将磁道宽度定义为高精度，并且可以可靠地对中心有效区域施加所需的磁特性。提供了产生磁阻效应的层压膜，对层叠膜施加磁偏置的磁畴控制膜和一对引线导体膜。叠层膜和磁畴控制膜彼此层叠以构成中心活性区域。引线导体膜在与中心活动区域的层压方向成直角的方向上的两侧终止中心有源区域的侧端面。

26. 发明授权

US07876537B2 Magnetoresistive element incorporating conductive film disposed on peripheral surface of layered structure including spacer layer, free layer and pinned layer, the conductive film allowing conduction between the free layer and the pinned layer 有权
标题翻译：磁导元件包括设置在包括间隔层，自由层和被钉扎层的层状结构的周边表面上的导电膜，导电膜允许自由层和钉扎层之间的导电
公开(公告)号：US07876537B2
公开(公告)日：2011-01-25
申请号：US11790396
申请日：2007-04-25
申请人： Takumi Uesugi , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
发明人： Takumi Uesugi , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01L27/222 , H01L43/08
摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.
摘要翻译： MR元件结合了分层结构。层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

27. 发明申请

US20080222878A1 Method of manufacturing magnetic head 审中-公开
标题翻译：制造磁头的方法
公开(公告)号：US20080222878A1
公开(公告)日：2008-09-18
申请号：US11723127
申请日：2007-03-16
申请人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
发明人： Takeo Kagami , Tetsuro Sasaki , Yuichi Watabe , Takamitsu Sakamoto
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/3166 , G11B5/3169 , G11B5/3173 , G11B5/3967 , Y10T29/49041 , Y10T29/49043
摘要： A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance thus obtained, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.
摘要翻译：制造磁头的方法包括以下步骤：通过在单个基板上形成多个磁头的部件来制造其中预磁头部分以多行排列的子结构; 以及通过切割所述子结构将所述前头部彼此分离来制造所述多个磁头。在制造子结构的步骤中，检测将通过进行研磨而形成MR元件的MR膜的电阻，以确定轨道宽度限定部分和极层的宽部分之间的边界的目标位置基于由此获得的电阻，从而形成极层。在制造磁头的步骤中，通过切割子结构而形成的表面被重叠，使得MR膜被研磨并且其电阻达到预定值。

28. 发明授权

US07418777B2 Method on manufacturing spin valve film 失效
标题翻译：自旋阀膜制造方法
公开(公告)号：US07418777B2
公开(公告)日：2008-09-02
申请号：US11121929
申请日：2005-05-05
申请人： Hajime Amano , Hiroaki Takezutsumi , Tetsuro Sasaki , Jun-ichi Sato
发明人： Hajime Amano , Hiroaki Takezutsumi , Tetsuro Sasaki , Jun-ichi Sato
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3166 , G11B5/3903 , H01F41/302 , Y10T29/49032 , Y10T29/49036 , Y10T29/49043 , Y10T29/49044
摘要： A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but before an initiation of a film making process for forming a succeeding film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is introduced by interrupting a film making process. This step may be performed by keeping a substrate within a sputtering vacuum chamber. The interruption can be shortened by exposing the substrate to a plasma, transferring the substrate in a separate vacuum chamber is lower or whose H2O or O2 concentration is higher than that in the sputtering vacuum chamber, conducting a surface treatment with a gas containing H2O or O2, or flowing a process gas.
摘要翻译：制造自旋阀膜的方法产生大的读出信号。在完成用于形成要连续形成的两个膜的先前膜的成膜工艺之后，但是在开始用于形成两个膜的后续膜的成膜工艺之前，将减少所述两个膜的各向异性磁场的步骤通过中断制膜过程引入自旋阀膜。该步骤可以通过将衬底保持在溅射真空室内来执行。通过将衬底暴露于等离子体可以缩短中断，在单独的真空室中转移衬底较低或其H 2 O 2 O或O 2 O 2浓度高于在溅射真空室中，用含有H 2 O或O 2 O 2的气体进行表面处理或使工艺气体流动。

29. 发明申请

US20070218500A1 Method and Apparatus for Detection of Live Bacterium Within Test Subject Through Specifically labeling Thereof 审中-公开
标题翻译：通过特异性标记检测受试者中活细菌的方法和装置
公开(公告)号：US20070218500A1
公开(公告)日：2007-09-20
申请号：US11587846
申请日：2005-03-03
申请人： Tohru Mikoshiba , Tetsuro Sasaki , Takaharu Enjoji
发明人： Tohru Mikoshiba , Tetsuro Sasaki , Takaharu Enjoji
IPC分类号： G01N33/53
CPC分类号： G01N33/56911 , B01J20/286 , B01J20/3242 , B01J2220/52 , B01J2220/54 , B01J2220/58 , G01N21/6428 , G01N21/78 , G01N33/58
摘要： A method and apparatus for detection whereby live bacteria among microbes as an antigen can be detected rapidly in a short period of time through specifically labeling of live bacteria within a test subject antigen and whereby testing assurance can be ensured. The method and apparatus are characterized in that labeled antigen (14) is formed by action, on a test subject antigen such as Escherichia coli, of labeled substance (13) zymolyzable by live bacteria (target bacteria (12)) within the test subject antigen, and the resultant labeled antigen (14) is trapped on an immobilization phase having, immobilized thereon, a specific binding antibody capable of specifically binding to the test subject antigen.
摘要翻译：一种用于检测的方法和装置，其中通过特异性标记测试受试者抗原内的活细菌，可以在短时间内快速检测作为抗原的微生物中的活细菌，并且由此可以确保测试保证。所述方法和装置的特征在于，通过作用于被检对象抗原（例如大肠杆菌）的受试对象抗原中的活细菌（靶细菌（12））可酶解的标记物质（13）的作用形成标记的抗原（14），并将所得标记的抗原（14）捕获在其上固定有能够特异性结合测试受试者抗原的特异性结合抗体的固定相上。

30. 发明申请

US20050231857A1 Method of manufacturing spin valve film 失效
标题翻译：自旋阀膜的制造方法
公开(公告)号：US20050231857A1
公开(公告)日：2005-10-20
申请号：US11121929
申请日：2005-05-05
申请人： Hajime Amano , Hiroaki Takezutsumi , Tetsuro Sasaki , Jun-ichi Sato
发明人： Hajime Amano , Hiroaki Takezutsumi , Tetsuro Sasaki , Jun-ichi Sato
IPC分类号： G11B5/31 , G11B5/39 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3166 , G11B5/3903 , H01F41/302 , Y10T29/49032 , Y10T29/49036 , Y10T29/49043 , Y10T29/49044
摘要： During a process of manufacturing a spin valve film which produces a large read out signal upon being used as a reading element of a thin film magnetic head, after a completion of a film making process for forming a previous film of two films to be formed successively, but before an initiation of a film making process for forming a succeeding film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film by interrupting a film making process is introduced. The anisotropic magnetic field reducing step may be performed by keeping a substrate within a sputtering vacuum chamber. A period of the interruption can be shortened by exposing the substrate to a plasma, by transferring the substrate in a separate vacuum chamber whose degree of vacuum is lower than that of the sputtering vacuum chamber or whose H2O or O2 concentration is higher than that in the sputtering vacuum chamber, by conducting a surface treatment with a gas containing H2O or O2 by not less than 1 ppm, or by flowing a process gas.
摘要翻译：在制造在用作薄膜磁头的读取元件时产生大的读出信号的自旋阀膜的过程中，在完成用于形成要连续形成的两个膜的先前膜的成膜工艺完成之后，但是在开始形成两片膜的后续膜的成膜工艺之前，引入了通过中断成膜工艺来减小自旋阀膜的各向异性磁场的步骤。可以通过将衬底保持在溅射真空室内来进行各向异性磁场降低步骤。通过将衬底暴露于等离子体，可以通过将衬底转移到真空度比溅射真空室的真空度低的溅射真空室或其H 2 O 2 O 或O 2 O 2浓度高于溅射真空室中的浓度，通过用含有H 2 O或O 2 O 2的气体进行表面处理，不小于1ppm，或通过流动工艺气体。

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