专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08193074B2 Integration of damascene type diodes and conductive wires for memory device 有权
标题翻译：集成镶嵌型二极管和导线用于存储器件
公开(公告)号：US08193074B2
公开(公告)日：2012-06-05
申请号：US12292620
申请日：2008-11-21
申请人： Yoichiro Tanaka
发明人： Yoichiro Tanaka
IPC分类号： H01L21/326
CPC分类号： H01L27/1021
摘要： A method of making a semiconductor device includes forming a first conductivity type polysilicon layer over a substrate, forming an insulating layer over the first conductivity type polysilicon layer, where the insulating layer comprises an opening exposing the first conductivity type polysilicon layer, and forming an intrinsic polysilicon layer in the opening over the first conductivity type polysilicon layer. A nonvolatile memory device contains a first electrode, a steering element located in electrical contact with the first electrode, a storage element having a U-shape cross sectional shape located over the steering element, and a second electrode located in electrical contact with the storage element.
摘要翻译：制造半导体器件的方法包括在衬底上形成第一导电型多晶硅层，在第一导电型多晶硅层上形成绝缘层，其中绝缘层包括暴露第一导电型多晶硅层的开口，并形成内在的在第一导电型多晶硅层的开口中的多晶硅层。非易失性存储器件包括第一电极，与第一电极电接触的操作元件，位于操舵元件上方的具有U形横截面形状的存储元件，以及与存储元件电接触的第二电极。

22. 发明授权

US08071475B2 Liner for tungsten/silicon dioxide interface in memory 有权
标题翻译：内存中用于钨/二氧化硅界面的衬垫
公开(公告)号：US08071475B2
公开(公告)日：2011-12-06
申请号：US11863734
申请日：2007-09-28
申请人： Yoichiro Tanaka , Steven J. Radigan , Usha Raghuram
发明人： Yoichiro Tanaka , Steven J. Radigan , Usha Raghuram
IPC分类号： H01L21/44
CPC分类号： H01L27/101 , H01L27/1021
摘要： A semiconductor wafer assembly includes a base of dielectric. A layer of silicon is deposited thereover. A metal hard mask is deposited over the silicon. A dielectric hard mask is deposited over the metal hard mask. Photoresist is deposited over the dielectric hard mask, whereby a plurality of sacrificial columns is formed from the layer of metal hard mask through the photoresist such that the sacrificial columns extend out from the silicon layer. An interface layer is disposed between the layer of conductive material and the layer of hard mask to enhance adhesion between each of the plurality of sacrificial columns and the layer of conductive material to optimize the formation of junction diodes out of the silicon by preventing the plurality of sacrificial columns from being detached from the layer of silicon prematurely due to the sacrificial columns peeling or falling off.
摘要翻译：半导体晶片组件包括电介质基体。一层硅沉积在其上。金属硬掩模沉积在硅上。电介质硬掩模沉积在金属硬掩模上。光致抗蚀剂沉积在电介质硬掩模上，由此通过光致抗蚀剂从金属硬掩模层形成多个牺牲柱，使得牺牲柱从硅层延伸出来。界面层设置在导电材料层和硬掩模层之间，以增强多个牺牲柱和导电材料层之间的粘附力，以通过防止多个牺牲柱由于牺牲柱脱落或脱落而过早地与硅层分离。

23. 发明授权

US07927977B2 Method of making damascene diodes using sacrificial material 有权
标题翻译：使用牺牲材料制造镶嵌二极管的方法
公开(公告)号：US07927977B2
公开(公告)日：2011-04-19
申请号：US12458543
申请日：2009-07-15
申请人： Raghuveer S. Makala , Vance Dunton , Yoichiro Tanaka , Steven Maxwell , Tong Zhang , Steven J. Radigan
发明人： Raghuveer S. Makala , Vance Dunton , Yoichiro Tanaka , Steven Maxwell , Tong Zhang , Steven J. Radigan
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L27/1021 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/16
摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
摘要翻译：制造半导体器件的方法包括在下层上形成包括种子材料的第一层，在第一层上形成包含牺牲材料的第二层，牺牲材料与种子材料不同，图案化第一层和在多个单独的特征之间形成绝缘填充材料，从所述分离的特征中移除所述牺牲材料以在所述绝缘填充材料中形成多个开口，使得所述种子材料暴露在所述第二层中多个开口，以及在多个开口中的暴露的种子材料上生长半导体材料。

24. 发明申请

US20100127358A1 Integration of damascene type diodes and conductive wires for memory device 有权
标题翻译：集成镶嵌型二极管和导线用于存储器件
公开(公告)号：US20100127358A1
公开(公告)日：2010-05-27
申请号：US12292620
申请日：2008-11-21
申请人： Yoichiro Tanaka
发明人： Yoichiro Tanaka
IPC分类号： H01L21/329 , H01L29/868
CPC分类号： H01L27/1021
摘要： A method of making a semiconductor device includes forming a first conductivity type polysilicon layer over a substrate, forming an insulating layer over the first conductivity type polysilicon layer, where the insulating layer comprises an opening exposing the first conductivity type polysilicon layer, and forming an intrinsic polysilicon layer in the opening over the first conductivity type polysilicon layer. A nonvolatile memory device contains a first electrode, a steering element located in electrical contact with the first electrode, a storage element having a U-shape cross sectional shape located over the steering element, and a second electrode located in electrical contact with the storage element.
摘要翻译：制造半导体器件的方法包括在衬底上形成第一导电型多晶硅层，在第一导电型多晶硅层上形成绝缘层，其中绝缘层包括暴露第一导电型多晶硅层的开口，并形成内在的在第一导电型多晶硅层的开口中的多晶硅层。非易失性存储器件包括第一电极，与第一电极电接触的操作元件，位于操舵元件上方的具有U形横截面形状的存储元件，以及与存储元件电接触的第二电极。

25. 发明申请

US20080237862A1 Implementation of diffusion barrier in 3D memory 有权
标题翻译：在3D存储器中实现扩散屏障
公开(公告)号：US20080237862A1
公开(公告)日：2008-10-02
申请号：US11731676
申请日：2007-03-30
申请人： Yoichiro Tanaka
发明人： Yoichiro Tanaka
IPC分类号： H01L23/48 , H01L29/00
CPC分类号： H01L27/101 , H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： One or more diffusion barriers are formed around one or more conductors in a three dimensional or 3D memory cell. The diffusion barriers allow the conductors to comprise very low resistivity materials, such as copper, that may otherwise out diffuse into surrounding areas, particularly at elevated processing temperatures. Utilizing lower resistivity materials allows device dimension to be reduced by mitigating increases in resistance that occur when the size of the conductors is reduced. As such, more cells can be produced over a given area, thus increasing the density and storage capacity of a resulting memory array.
摘要翻译：在三维或三维存储单元中的一个或多个导体周围形成一个或多个扩散屏障。扩散阻挡层允许导体包括非常低电阻率的材料，例如铜，其可能会散布到周围区域，特别是在升高的处理温度下。利用较低电阻率的材料允许通过减少当导体尺寸减小时发生的电阻增加来减小器件尺寸。因此，可以在给定区域上产生更多的单元，从而增加所得到的存储器阵列的密度和存储容量。

26. 发明授权

US06846581B2 Perpendicular magnetic recording medium and magnetic recording-reproducing apparatus using the same 失效
标题翻译：垂直磁记录介质和使用其的磁记录再现装置
公开(公告)号：US06846581B2
公开(公告)日：2005-01-25
申请号：US10101949
申请日：2002-03-21
申请人： Soichi Oikawa , Yoichiro Tanaka , Takashi Hikosaka , Futoshi Nakamura
发明人： Soichi Oikawa , Yoichiro Tanaka , Takashi Hikosaka , Futoshi Nakamura
IPC分类号： G11B5/64 , G11B5/65 , G11B5/66 , G11B5/667 , G11B5/673 , G11B5/738 , H01F10/16 , H01F10/30 , B32B19/00
CPC分类号： G11B5/66
摘要： Disclosed is a perpendicular magnetic recording medium, comprising a nonmagnetic substrate, a longitudinal hard magnetic multi-layered film arranged on the nonmagnetic substrate, including a nonmagnetic intermediate layer and a pair of hard magnetic layers laminated one upon the other with the nonmagnetic intermediate layer interposed therebetween, and having at least two hard magnetic layers, a longitudinal soft magnetic layer formed on the longitudinal hard magnetic multi-layered film, and a perpendicular magnetic recording layer formed on the longitudinal soft magnetic layer. The perpendicular magnetic recording medium of the particular construction is capable of suppressing noise and achieves a high recording magnetic field intensity and a high recording resolution.
摘要翻译：公开了一种垂直磁记录介质，包括非磁性基板，布置在非磁性基板上的纵向硬磁性多层膜，包括非磁性中间层和一对彼此层叠的硬磁性层，其中非磁性中间层插入并且具有至少两个硬磁性层，形成在纵向硬磁性多层膜上的纵向软磁性层和形成在纵向软磁性层上的垂直磁记录层。具体结构的垂直磁记录介质能够抑制噪声，并且实现高记录磁场强度和高记录分辨率。

27. 发明授权

US06496321B1 Magnetic recording/reproducing device using composite head 失效
标题翻译：使用复合头的磁记录/再现装置
公开(公告)号：US06496321B1
公开(公告)日：2002-12-17
申请号：US09429637
申请日：1999-10-29
申请人： Yoichiro Tanaka
发明人： Yoichiro Tanaka
IPC分类号： G11B5596
CPC分类号： B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/4886 , G11B5/4907 , G11B5/4969 , G11B2005/0018
摘要： A magnetic recording/reproducing device comprises a recording head for magnetically recording a signal on a magnetic recording medium along a predetermined track, and a reproducing head member including a spin valve typed magnetoresistive element and bias magnetic applying means, associated with the spin valve typed magnetoresistive element, for applying a bias magnetic field to the spin valve typed magnetoresistive element, the reproducing head member for changing a sensitivity distribution in a track width direction based on a distance between the reproducing head and the recording head, and an angle difference between the direction of the reproducing head and the extending direction of the track.
摘要翻译：磁记录/再现装置包括用于沿着预定轨道磁记录在磁记录介质上的信号的记录头和包括与自旋阀型磁阻相关联的自旋阀型磁阻元件和偏压磁施加装置的再现头部件元件，用于向自旋阀型磁阻元件施加偏置磁场，用于基于重放头与记录头之间的距离改变轨道宽度方向上的灵敏度分布的再现头部件以及方向的再现头和轨道的延伸方向。

28. 发明授权

US06197167B1 Step coverage and overhang improvement by pedestal bias voltage modulation 有权
标题翻译：通过基座偏置电压调制实现阶跃覆盖和突出改进
公开(公告)号：US06197167B1
公开(公告)日：2001-03-06
申请号：US09416374
申请日：1999-10-12
申请人： Yoichiro Tanaka
发明人： Yoichiro Tanaka
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/0641 , C23C14/16 , C23C14/358 , H01L21/2855 , H01L21/76877
摘要： The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.
摘要翻译：本发明提供了一种在衬底上沉积金属膜的方法，包括在腔室中产生高密度等离子体，将金属颗粒从靶溅射到衬底，以及在沉积期间将调制的射频（RF）偏压施加到衬底。本发明的另一方面提供了一种用于在包括高密度等离子体物理气相沉积（HDP PVD）室的衬底上沉积金属膜的装置和用于调制施加到腔室中的衬底的RF偏置功率的控制器。

29. 发明授权

US6126926A Whitening powder 失效
标题翻译：美白粉
公开(公告)号：US6126926A
公开(公告)日：2000-10-03
申请号：US7513
申请日：1998-01-15
申请人： Yoichiro Tanaka , Junichiro Egawa
发明人： Yoichiro Tanaka , Junichiro Egawa
IPC分类号： A61K8/25 , A61K8/34 , A61K8/67 , A61K8/98 , A61Q19/00 , A61Q19/02 , A61K7/135 , A61K6/00 , A61K7/00 , A11K9/14
CPC分类号： A61Q19/00 , A61K8/25 , A61K8/34 , A61K8/676 , A61K8/982 , A61Q19/02 , Y10S514/844
摘要： A whitening powder comprises the following ingredients:______________________________________ (A) trimethylsiloxylated silicic acid anhydride 0.1 to 7 wt. % having a specific area of at least 80 m.sup.2 /g and a hydrophobicization degree of at least 50% (B) polyhydric alcohol 5 to 40 wt. % (C) water 50 to 94 wt. % (D) whitening ingredient 0.01 to 5 wt. %. ______________________________________ The whitening powder is substantially free of any powder coated with a fluorine compound, the weight ratio of the ingredient (B) to the ingredient (A) is at least 1, and the sum of the ingredient (B) and the ingredient (C) accounts for at least 80 wt. % of the whitening powder.
摘要翻译：美白粉包括以下成分： - （A）三甲基甲硅烷氧基化的硅酸酐0.1至7wt。％ - 具有至少80m 2 / g的比表面积和至少50％的疏水度 - （B）多元醇5至40wt。％ - （C）水50〜94重量％％ - （D）美白成分0.01〜5重量％％。 - 美白粉基本上不含任何涂有氟化合物的粉末，成分（B）与成分（A）的重量比至少为1，成分（B）和成分（C ）占至少80重量％％的美白粉。

30. 发明授权

US5815342A Perpendicular magnetic recording/reproducing apparatus 失效
标题翻译：垂直磁记录/重放装置
公开(公告)号：US5815342A
公开(公告)日：1998-09-29
申请号：US558971
申请日：1995-11-13
申请人： Junichi Akiyama , Yoichiro Tanaka
发明人： Junichi Akiyama , Yoichiro Tanaka
IPC分类号： G11B5/00 , G11B5/012 , G11B5/127 , G11B5/31 , G11B5/39 , G11B5/66 , G11B5/73 , G11B5/82 , G11B23/00
CPC分类号： G11B5/667 , G11B5/00 , G11B5/012 , G11B5/1278 , G11B5/66 , G11B5/7325 , G11B5/82 , G11B2005/0016 , G11B23/0035 , G11B5/3143 , G11B5/3932 , Y10S428/90 , Y10T428/12465 , Y10T428/12861 , Y10T428/31678
摘要： Disclosed is a perpendicular magnetic recording/reproducing apparatus comprising perpendicular magnetic recording media and magnetic heads. Each perpendicular magnetic recording medium has a substrate, a soft magnetic back layer and a magnetic recording layer with a perpendicular magnetic anisotropy both formed on the substrate. Each magnetic head has at least one magnetic field generating element capable of applying a magnetic field to a given region of the soft magnetic back layer at a time of signal reproduction, for performing recording and reproducing of magnetized signals with respect to the associated perpendicular magnetic recording media, whereby Barkhausen noise is reduced. The perpendicular magnetic recording medium may further include a bias-field applying layer formed on at least a substrate side surface of the soft magnetic back layer. Each perpendicular magnetic recording medium may further have the bias-field applying layer formed between the substrate and the high-permeability magnetic layer.
摘要翻译：公开了一种包括垂直磁记录介质和磁头的垂直磁记录/重放装置。每个垂直磁记录介质都具有基板，软磁背层和具有垂直磁各向异性的磁记录层，两者都形成在基板上。每个磁头具有至少一个能够在信号再现时向软磁背层的给定区域施加磁场的磁场产生元件，用于相对于相关联的垂直磁记录执行磁化信号的记录和再现媒体，从而巴克豪森噪音降低。垂直磁记录介质还可以包括形成在软磁背层的至少基板侧表面上的偏置场施加层。每个垂直磁记录介质还可以具有形成在基板和高磁导率磁性层之间的偏置场施加层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式