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21. 发明申请

US20090268773A1 SURFACE EMITTING LASER ELEMENT, SURFACE EMITTING LASER ELEMENT ARRAY, METHOD OF FABRICATING A SURFACE EMITTING LASER ELEMENT 有权
标题翻译：表面发射激光元件，表面发射激光元件阵列，制造表面发射激光元件的方法
公开(公告)号：US20090268773A1
公开(公告)日：2009-10-29
申请号：US12108931
申请日：2008-04-24
申请人： Norihiro IWAI , Takeo Kageyama , Kinuka Tanabe
发明人： Norihiro IWAI , Takeo Kageyama , Kinuka Tanabe
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18341 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： A surface emitting laser element that includes a cylindrical mesa post in which a plurality of semiconductor layers including an active layer is grown and that emits a laser light in a direction perpendicular to a substrate surface, the surface emitting laser element including a dielectric multilayer film on a top surface of the mesa post in at least a portion over a current injection area of the active layer; and a dielectric portion that includes layers fewer than layers of the dielectric multilayer film and that is arranged on a portion excluding the portion over the current injection area on the top surface of the mesa post and on at least part of a side surface of the mesa post.
摘要翻译：一种表面发射激光器元件，其包括圆柱形台面柱，其中包括有源层的多个半导体层生长并且沿垂直于衬底表面的方向发射激光，所述表面发射激光器元件包括介电多层膜在活性层的电流注入区域的至少一部分中的台面柱的顶表面; 以及电介质部分，其包括比所述电介质多层膜低的层的层，并且布置在除了台面顶表面上的电流注入区域上的部分之外的部分和台面的至少一部分侧表面帖子

22. 发明申请

US20100195689A1 SURFACE EMITTING LASER ELEMENT ARRAY 有权
标题翻译：表面发射激光元件阵列
公开(公告)号：US20100195689A1
公开(公告)日：2010-08-05
申请号：US12224719
申请日：2006-09-01
申请人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
发明人： Maiko Ariga , Takeo Kageyama , Norihiro Iwai , Kazuaki Nishikata
IPC分类号： H01S5/42 , H01S5/323 , H01S5/187
CPC分类号： H01S5/423 , H01L2224/48091 , H01L2224/49175 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/06226 , H01S5/18313 , H01S5/18341 , H01S2301/176 , H01S2301/18 , H01L2924/00014
摘要： A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is applied to the active layer (4) using the first electrode (9) and the second electrode (10).
摘要翻译：表面发射激光元件阵列包括在同一衬底（1）上的多个表面发射激光器元件（15），每个表面发射激光器元件（15）包括由包括有源层（4）形成的层叠结构形成的台面柱，用于减少表面发射激光器构成表面发射激光元件阵列的元件，并且用于改善高速响应，其中每个表面发射激光器元件（15）包括第一电极（9），第二电极（10）和第三电极（11），其中具有与第一电极（9）不同的极性; 第一电极（9）布置在台面柱上; 第二电极（10）布置在与第一电极（9）相同的基板（1）的一个表面上; 第三电极（11）布置在与第一电极和第二电极（9,10）相反的基板（1）的另一个表面上，并且被设置为表面发射激光元件（15）的公共电极， ; 并且使用第一电极（9）和第二电极（10）向有源层（4）施加电流。

23. 发明申请

US20070091965A1 VERTICAL-CAVITY SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE 有权
标题翻译：垂直表面发射半导体激光器件
公开(公告)号：US20070091965A1
公开(公告)日：2007-04-26
申请号：US11551101
申请日：2006-10-19
申请人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
发明人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/0425 , H01S5/18311 , H01S5/18338 , H01S5/18341 , H01S5/18369 , H01S5/3202
摘要： A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
摘要翻译：垂直腔表面发射（VCSEL）器件具有包括顶部DBR镜，有源层，电流限制氧化物层和底部DBR镜的层结构，该层结构被配置为台面柱。电流限制氧化物层具有从台面柱的侧壁氧化的中心电流注入区域和外围电流阻挡区域。台面柱具有基本上正方形的横截面形状，从而允许氧化热处理以在电流限制氧化物层中构造基本上圆形的电流注入区域。

24. 发明申请

US20100008674A1 SURFACE EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件
公开(公告)号：US20100008674A1
公开(公告)日：2010-01-14
申请号：US12500757
申请日：2009-07-10
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H04B10/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：提供一种包括基板的表面发射激光器件; 布置在所述基板上的光学谐振器，所述光学谐振器包括下部多层反射器和上部多层反射器; 布置在所述谐振器中的应变有源层，所述应变有源层具有由量子阱层和阻挡层形成的多量子阱结构; 以及电流限制层，其布置在所述应变有源层的上侧，所述电流限制层包括选择性氧化部分，其中所述电流限制层布置在所述选择性氧化部分中的应变影响所述应变有源层的位置。

25. 发明申请

US20080212633A1 SURFACE EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件
公开(公告)号：US20080212633A1
公开(公告)日：2008-09-04
申请号：US12040348
申请日：2008-02-29
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/34
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：包括下多层反射器和上多层反射器的光学谐振器被布置在基板上。具有量子阱层和势垒层的多量子阱结构的应变有源层被布置在谐振器中。包含选择性氧化部分的电流限制层布置在应变有源层的上侧。电流限制层布置在选择性氧化部分的应变影响应变有源层的位置处。

26. 发明授权

US08144742B2 Surface emitting laser device 有权
标题翻译：表面发射激光器件
公开(公告)号：US08144742B2
公开(公告)日：2012-03-27
申请号：US12500757
申请日：2009-07-10
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：提供一种包括基板的表面发射激光器件; 布置在所述基板上的光学谐振器，所述光学谐振器包括下部多层反射器和上部多层反射器; 布置在所述谐振器中的应变有源层，所述应变有源层具有由量子阱层和阻挡层形成的多量子阱结构; 以及电流限制层，其布置在所述应变有源层的上侧，所述电流限制层包括选择性氧化部分，其中所述电流限制层布置在所述选择性氧化部分中的应变影响所述应变有源层的位置。

27. 发明授权

US07577176B2 Surface emitting laser device 有权
标题翻译：表面发射激光器件
公开(公告)号：US07577176B2
公开(公告)日：2009-08-18
申请号：US12040348
申请日：2008-02-29
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：包括下多层反射器和上多层反射器的光学谐振器被布置在基板上。具有量子阱层和势垒层的多量子阱结构的应变有源层被布置在谐振器中。包含选择性氧化部分的电流限制层布置在应变有源层的上侧。电流限制层布置在选择性氧化部分的应变影响应变有源层的位置。

28. 发明申请

US20060193361A1 Vertical cavity surface emitting laser device having a higher optical output power 审中-公开
标题翻译：具有较高光输出功率的垂直腔表面发射激光器件
公开(公告)号：US20060193361A1
公开(公告)日：2006-08-31
申请号：US11347225
申请日：2006-02-06
申请人： Setiagung Casimirus , Takeo Kageyama
发明人： Setiagung Casimirus , Takeo Kageyama
IPC分类号： H01S3/14 , H01S5/20 , H01S5/00 , H01S3/08 , H01S5/323
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/18311 , H01S5/18369 , H01S5/3095 , H01S5/32366 , H01S5/34306 , H01S2301/166
摘要： A vertical cavity surface emitting laser (VCSEL) device includes has an epitaxial layer structure formed on a GaAs substrate and including a pair of multilayer reflectors and a tunnel junction structure. The tunnel junction structure is configured by a heavily-doped n-type Tix2Inx1Ga1-x1-x2As1-y1-y2Ny1Sby2 mixed-crystal layer and a heavily-doped p-type Tix4Inx3Ga1-x3-x4As1-y3-y4Ny3Sby4 mixed-crystal layer, where 0≦x2≦0.3, 0≦x1≦0.3, 0
摘要翻译：垂直腔表面发射激光器（VCSEL）器件包括在GaAs衬底上形成的包括一对多层反射器和隧道结结构的外延层结构。隧道结结构由重掺杂的n型Ti x In 1 x 1 1 x 1 2 x 1 2 n 1 -y1-y2 y1 混合晶体层和重掺杂p型Ti > x3＆lt; 1＆gt; 1-x3-x4＆lt; 1＆gt; 1-y3-y4＆lt; n3＆混合晶层，其中0 <= x2 <= 0.3,0 <= x1 <= 0.3,0

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