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    • 24. 发明授权
    • Electro-optical device substrate, electro-optical device, and electronic apparatus
    • 电光器件基板,电光器件和电子设备
    • US08441014B2
    • 2013-05-14
    • US13078197
    • 2011-04-01
    • Yasushi YamazakiTakashi Sato
    • Yasushi YamazakiTakashi Sato
    • H01L29/04
    • H01L27/1225G02F1/167H01L27/1255
    • In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween.
    • 在电光器件基板中,第一和第二像素开关元件各自包括由第一导电膜形成的栅极电极,由第一绝缘膜形成的栅极绝缘膜,半导体层,由第二导电膜形成的源极 以及由第二导电膜形成的漏电极。 第一存储电容器包括由第二导电膜形成的第一存储电容电极,至少形成在第一保持电容电极上的由第二绝缘膜形成的保护膜,以及形成为与第一导电膜重叠的像素电极 保持电容电极至少部分地保留有保护膜。
    • 25. 发明授权
    • Insert casting structure
    • 插入铸造结构
    • US08402881B2
    • 2013-03-26
    • US12425676
    • 2009-04-17
    • Takashi SatoGiichiro Saito
    • Takashi SatoGiichiro Saito
    • F16J10/04
    • B22D19/0009C22C37/10F02F1/004
    • Evaluation results are shown in Table 1. The embodiments 1-9 possess a high thermal conductivity and high bonding strength. However, the thermal conductivity has dropped in the comparative examples 1, 2 and 4 with a low surface area ratio and in the comparative example 3 with a high surface area ratio. The comparative example 2 with a low projection height has a low bonding strength, and the comparative example 3 with a high projection height has a drop in the thermal conductivity. The thermal conductivity has declined in the comparative example 1 with relatively few projections, and the thermal conductivity has declined in the comparative example 4 with many projections. The comparative example 5 with no projections and having a rough casting surface does not have sufficient bonding strength.
    • 评价结果示于表1中。实施例1-9具有高导热性和高粘结强度。 然而,具有低表面积比的比较例1,2和4中的导热率在比较例3中具有高的表面积比。 具有低突起高度的比较例2具有低的接合强度,并且具有高突起高度的比较例3导热性降低。 在具有相对较少的突起的比较例1中,热导率已经下降,并且在具有许多突出的比较例4中,热导率已经下降。 没有突起且具有粗糙铸造表面的比较例5不具有足够的接合强度。
    • 30. 发明授权
    • N-acetylgalactosamine transferases and nucleic acids encoding the same
    • N-乙酰半乳糖胺转移酶和编码相同的核酸
    • US08278037B2
    • 2012-10-02
    • US12353385
    • 2009-01-14
    • Hisashi NarimatsuMasanori GotohTakashi Sato
    • Hisashi NarimatsuMasanori GotohTakashi Sato
    • C12N15/54C12N15/63C12Q1/68C12N9/10
    • C12N9/1051G01N33/57484
    • An enzyme which transfers N-acetylgalactosamine to N-acetylglucosamine via a β1-4 linkage was isolated and the structure of its gene was explained. This led to the production of said enzyme or the like by genetic engineering techniques, the production of oligosaccharides using said enzyme, and the diagnosis of diseases on the basis of said gene or the like.The present invention uses a protein having the amino acid sequence shown in SEQ ID NO: 1, 3, 26 or 27 in the Sequence Listing or a variant of said amino acid sequence wherein one or more acids are substituted or deleted, or one or more acids are inserted or added and having the activity of transferring N-acetylgalactosamine (GalNAc) to N-acetylglucosamine serving as a substrate via a β1-4 linkage and nucleic acids encoding said protein.
    • 分离通过一个1-4键将N-乙酰半乳糖胺转移到N-乙酰氨基葡萄糖的酶,并解释其基因的结构。 这导致通过基因工程技术生产所述酶等,使用所述酶生产寡糖,以及基于所述基因等诊断疾病。 本发明使用具有序列表中SEQ ID NO:1,3,26或27所示氨基酸序列的蛋白质或其中一个或多个酸被取代或缺失的所述氨基酸序列的变体,或一个或多个 酸被插入或添加并且具有通过β-连接和编码所述蛋白质的核酸将N-乙酰半乳糖胺(GalNAc)转移到用作底物的N-乙酰葡糖胺的活性。