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21. 发明申请

US20090115002A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090115002A1
公开(公告)日：2009-05-07
申请号：US11922605
申请日：2006-06-20
申请人： Tooru Tatsumi , Masayuki Terai , Takashi Hase , Kensuke Takahashi
发明人： Tooru Tatsumi , Masayuki Terai , Takashi Hase , Kensuke Takahashi
IPC分类号： H01L29/78
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823842 , H01L29/42372 , H01L29/4975 , H01L29/66545
摘要： There is provided a semiconductor device including: a first field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in a P channel forming region; and a second field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in an N channel forming region on a semiconductor substrate, wherein in the first and second field effect transistor regions, the gate electrodes are composed primarily of a silicide of metal M represented as M(x)Si(1−x)(0
摘要翻译：提供了一种半导体器件，包括：第一场效应晶体管区域，包括形成在P沟道形成区域中的栅极绝缘膜，栅电极和栅极侧壁; 以及第二场效应晶体管区域，其包括形成在半导体衬底上的N沟道形成区域中的栅极绝缘膜，栅极电极和栅极侧壁，其中在第一和第二场效应晶体管区域中，栅电极主要由 M（x）Si（1-x）（0

22. 发明申请

US20080013143A1 Optical switch controller and movable body controller 失效
标题翻译：光开关控制器和移动体控制器
公开(公告)号：US20080013143A1
公开(公告)日：2008-01-17
申请号：US11819145
申请日：2007-06-25
申请人： Satoshi Ide , Kazuyuki Mori , Kensuke Takahashi , Toru Matsuyama
发明人： Satoshi Ide , Kazuyuki Mori , Kensuke Takahashi , Toru Matsuyama
IPC分类号： G02B26/08
CPC分类号： G02B6/3588 , G02B6/3518 , G02B6/3556 , G02B6/357 , G02B6/3584 , H04Q11/0005 , H04Q2011/003 , H04Q2011/0039
摘要： In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.
摘要翻译：在光开关控制器中，为了能够以高精度减少和控制诸如倾斜镜的可移动体的移动控制的残余振动，处理单元输出用于控制倾斜镜的角度的驱动信号，驱动信号由D / A转换器进行D / A转换，然后被高压放大器改变为高电压信号以提供给倾斜镜，倾斜镜的静电电容相应于镜面检测单元检测静电电容并将其作为校正值反馈到处理单元，并且处理单元使用在实际改变倾斜镜的角度时获得的校正值来校正驱动信号。

23. 发明授权

US08581226B2 Nonvolatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US08581226B2
公开(公告)日：2013-11-12
申请号：US13236729
申请日：2011-09-20
申请人： Kensuke Takahashi
发明人： Kensuke Takahashi
IPC分类号： H01L29/06 , H01L27/108 , G11C27/00 , G11C11/00
CPC分类号： H01L45/146 , G11C13/0007 , H01L27/2481 , H01L45/04 , H01L45/1683
摘要： According to one embodiment, a nonvolatile memory device includes a word line interconnect layer, a bit line interconnect layer, and a pillar. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending in a second direction. The pillar is disposed between each of the word lines and each of the bit lines. The pillar includes a current selection film and a plurality of variable resistance films stacked on the current selection film. One variable resistance film includes a metal and either oxygen or nitrogen. Remainder of the variable resistance films include the metal, either oxygen or nitrogen, and a highly electronegative substance having electronegativity higher than electronegativity of the metal. A concentration of highly electronegative substance in the remainder of the variable resistance films is different among the variable resistance films.
摘要翻译：根据一个实施例，非易失性存储器件包括字线互连层，位线互连层和柱。字线互连层包括沿第一方向延伸的多个字线。位线互连层包括沿第二方向延伸的多个位线。支柱设置在每个字线和每个位线之间。支柱包括电流选择膜和堆叠在当前选择膜上的多个可变电阻膜。一个可变电阻膜包括金属和氧或氮。可变电阻膜的剩余包括金属，氧或氮，以及具有高于金属的电负性的电负性的高电负性物质。可变电阻膜的其余部分中高度负电性物质的浓度在可变电阻膜中是不同的。

24. 发明申请

US20130248795A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20130248795A1
公开(公告)日：2013-09-26
申请号：US13600359
申请日：2012-08-31
申请人： Kensuke Takahashi , Kotaro Fujii
发明人： Kensuke Takahashi , Kotaro Fujii
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , G11C13/0011 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2481 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： According to one embodiment, a nonvolatile memory device includes a first function layer. The first function layer includes a first electrode layer, a second electrode layer, and a variable resistance layer. The second electrode layer is opposed to the first electrode layer. The variable resistance layer is provided between the first electrode layer and the second electrode layer. Resistance state of the variable resistance layer is variable. The first function layer includes a first intermediate layer. The first intermediate layer is provided between the first electrode layer and the variable resistance layer. The first intermediate layer contacts the first electrode layer and the variable resistance layer.
摘要翻译：根据一个实施例，非易失性存储器件包括第一功能层。第一功能层包括第一电极层，第二电极层和可变电阻层。第二电极层与第一电极层相对。可变电阻层设置在第一电极层和第二电极层之间。可变电阻层的电阻状态是可变的。第一功能层包括第一中间层。第一中间层设置在第一电极层和可变电阻层之间。第一中间层与第一电极层和可变电阻层接触。

25. 发明授权

US08373149B2 Resistance change element and manufacturing method thereof 失效
标题翻译：电阻变化元件及其制造方法
公开(公告)号：US08373149B2
公开(公告)日：2013-02-12
申请号：US12920921
申请日：2009-04-07
申请人： Kensuke Takahashi
发明人： Kensuke Takahashi
IPC分类号： H01L45/00 , H01L21/14 , H01L29/12
CPC分类号： H01L45/146 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1675 , H01L45/1683
摘要： A resistance change element including: a lower electrode formed on at least one of a semiconductor and insulating substrate; a resistance change material layer formed on the lower electrode and including a transition metal oxide as a major component; and an upper electrode formed on the resistance change material layer. The resistance change material layer is formed of a nickel oxide containing nickel vacancy and having a higher oxygen concentration than a stoichiometric composition, and has a stacked structure with different composition ratios.
摘要翻译：一种电阻变化元件，包括：形成在半导体和绝缘基板中的至少一个上的下电极; 电阻变化材料层，形成在下部电极上并且包含过渡金属氧化物作为主要成分; 以及形成在电阻变化材料层上的上电极。电阻变化材料层由含有镍空位并且具有比化学计量组成更高的氧浓度的氧化镍形成，并且具有不同组成比的堆叠结构。

26. 发明申请

US20110233509A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20110233509A1
公开(公告)日：2011-09-29
申请号：US13052179
申请日：2011-03-21
申请人： Takashi SHIGEOKA , Tetsuji Kunitake , Hisashi Kato , Kenji Aoyama , Kensuke Takahashi
发明人： Takashi SHIGEOKA , Tetsuji Kunitake , Hisashi Kato , Kenji Aoyama , Kensuke Takahashi
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device including a nonvolatile memory layer is provided. The nonvolatile memory layer is formed of a metal oxide film that includes an element with a higher electronegativity compared with a metal element forming the metal oxide film in the metal oxide film at a concentration of 25 at % or less.
摘要翻译：根据一个实施例，提供了包括非易失性存储器层的非易失性存储器件。与金属氧化物膜中形成金属氧化物膜的金属元素浓度为25at％以下的金属氧化物膜相比，非易失性存储层由金属氧化物膜形成，该金属氧化物膜具有电负性高的元素。

27. 发明授权

US07859059B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07859059B2
公开(公告)日：2010-12-28
申请号：US12375183
申请日：2007-07-23
申请人： Kensuke Takahashi
发明人： Kensuke Takahashi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/119
CPC分类号： H01L29/4908 , H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L21/823878 , H01L21/84 , H01L21/845 , H01L27/1203 , H01L27/1211 , H01L29/4975 , H01L29/66545 , H01L29/66803 , H01L29/785
摘要： There is provided a semiconductor device having excellent device characteristics and reliability in which Vth values of an nMOS transistor and a pMOS transistor are controlled to be values necessary for a low-power device. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted MOS transistor including a first gate electrode comprising at least one type of crystalline phase selected from the group consisting of a WSi2 crystalline phase, an MoSi2 crystalline phase, an NiSi crystalline phase, and an NiSi2 crystalline phase as silicide region (1). The nMOS transistor is a fully depleted MOS transistor comprising at least one type of crystalline phase selected from the group consisting of a PtSi crystalline phase, a Pt2Si crystalline phase, an IrSi crystalline phase, an Ni2Si crystalline phase, and an Ni3Si crystalline phase as silicide region (2).
摘要翻译：提供了具有优异的器件特性和可靠性的半导体器件，其中nMOS晶体管和pMOS晶体管的Vth值被控制为低功率器件所需的值。半导体器件包括通过使用SOI衬底形成的pMOS晶体管和nMOS晶体管。 pMOS晶体管是完全耗尽的MOS晶体管，其包括第一栅电极，其包括选自由WSi2结晶相，MoSi 2结晶相，NiSi结晶相和NiSi 2结晶相组成的组中的至少一种晶体相，作为硅化物区域（1）。 nMOS晶体管是完全耗尽的MOS晶体管，其包括选自PtSi结晶相，Pt 2 Si结晶相，IrSi结晶相，Ni 2 Si结晶相和作为硅化物的Ni 3 Si结晶相中的至少一种结晶相区域（2）。

28. 发明申请

US20100155844A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100155844A1
公开(公告)日：2010-06-24
申请号：US12375708
申请日：2007-07-25
申请人： Kensuke Takahashi
发明人： Kensuke Takahashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L29/4908 , H01L21/28097 , H01L21/823835 , H01L21/823878 , H01L21/84 , H01L21/845 , H01L27/1203 , H01L27/1211 , H01L29/66545 , H01L29/66803 , H01L29/785
摘要： There is provided a semiconductor device having excellent device characteristics in which Vth values of an nMOS transistor and a pMOS transistor are controlled to be desired values. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted transistor including an n-type region, a first gate electrode, a first gate insulating film, and a source/drain region, and the nMOS transistor is a fully depleted transistor including a p-type region, a second gate electrode, a second gate insulating film, and a source/drain region. The first gate electrode includes silicide region comprising an NiSi crystalline phase containing an n-type impurity, the silicide region being in contact with the first gate insulating film, and the second gate electrode includes silicide region comprising an NiSi crystalline phase containing a p-type impurity, the silicide region being in contact with the second gate insulating film.
摘要翻译：提供了具有优异的器件特性的半导体器件，其中nMOS晶体管和pMOS晶体管的Vth值被控制为期望值。半导体器件包括通过使用SOI衬底形成的pMOS晶体管和nMOS晶体管。 pMOS晶体管是包括n型区域，第一栅极电极，第一栅极绝缘膜和源极/漏极区域的完全耗尽的晶体管，并且nMOS晶体管是包括p型区域的完全耗尽的晶体管，第二栅极电极，第二栅极绝缘膜和源极/漏极区域。第一栅电极包括包含含有n型杂质的NiSi晶相的硅化物区，硅化物区与第一栅极绝缘膜接触，第二栅电极包括含有包含p型的NiSi晶相的硅化物区所述硅化物区域与所述第二栅极绝缘膜接触。

29. 发明申请

US20100103493A1 Optical switch controller and movable body controller 有权
公开(公告)号：US20100103493A1
公开(公告)日：2010-04-29
申请号：US12654430
申请日：2009-12-18
申请人： Satoshi Ide , Kazuyuki Mori , Kensuke Takahashi , Toru Matsuyama
发明人： Satoshi Ide , Kazuyuki Mori , Kensuke Takahashi , Toru Matsuyama
IPC分类号： G02B26/08
CPC分类号： G02B6/3588 , G02B6/3518 , G02B6/3556 , G02B6/357 , G02B6/3584 , H04Q11/0005 , H04Q2011/003 , H04Q2011/0039
摘要： In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

30. 发明授权

US07703440B2 Control system for internal combustion engine 有权
标题翻译：内燃机控制系统
公开(公告)号：US07703440B2
公开(公告)日：2010-04-27
申请号：US12137939
申请日：2008-06-12
申请人： Junichi Hatano , Satoshi Yamaguchi , Katsuji Wada , Kensuke Takahashi
发明人： Junichi Hatano , Satoshi Yamaguchi , Katsuji Wada , Kensuke Takahashi
IPC分类号： F02D41/30
CPC分类号： F02D41/403 , F02D35/023 , F02D35/026 , F02D41/064 , F02D41/402 , F02D2041/281 , F02D2250/18 , Y02T10/44
摘要： A control system for an internal combustion engine having at least one fuel injection valve for injecting fuel into a combustion chamber of the engine. A compression end temperature in the combustion chamber is estimated. A target compression end temperature is calculated according to an operating condition of the engine. A main injection and a plurality of pilot injections before the main injection are performed by at least one fuel injection valve. A fuel injection amount in a first-performed pilot injection of the plurality of pilot injections is controlled so that the estimated compression end temperature coincides with the target compression end temperature.
摘要翻译：一种用于内燃机的控制系统，其具有至少一个用于将燃料喷射到发动机的燃烧室中的燃料喷射阀。估计燃烧室中的压缩端温度。根据发动机的运转状况来计算目标压缩结束温度。在主喷射之前的主喷射和多次先导喷射由至少一个燃料喷射阀执行。控制多次先导喷射的第一次先导喷射中的燃料喷射量，使得估计的压缩终止温度与目标压缩结束温度一致。

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