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21. 发明授权

US08198782B2 Ultrasonic transducer and manufacturing method thereof 有权
标题翻译：超声波换能器及其制造方法
公开(公告)号：US08198782B2
公开(公告)日：2012-06-12
申请号：US12714631
申请日：2010-03-01
申请人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki , Tatsuya Nagata
发明人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki , Tatsuya Nagata
IPC分类号： H01L41/08
CPC分类号： B06B1/0292
摘要： An ultrasonic transducer includes a first electrode, a second electrode, an insulating film disposed between the first and second electrodes, and a cavity disposed between the first and second electrodes. The insulating film includes a projection extending in the cavity, and a portion of the cavity is disposed between the projection and the first electrode. A portion of one of the first electrode and the second electrode has an opening corresponding to a position of the projection of the insulating film when viewed in plan view.
摘要翻译：超声换能器包括第一电极，第二电极，设置在第一和第二电极之间的绝缘膜，以及设置在第一和第二电极之间的空腔。绝缘膜包括在空腔中延伸的突起，并且空腔的一部分设置在突起和第一电极之间。当在平面图中观察时，第一电极和第二电极中的一个的一部分具有对应于绝缘膜的突起的位置的开口。

22. 发明授权

US07701110B2 Ultrasonic transducer and manufacturing method thereof 失效
标题翻译：超声波换能器及其制造方法
公开(公告)号：US07701110B2
公开(公告)日：2010-04-20
申请号：US11498872
申请日：2006-08-04
申请人： Hiroshi Fukuda , Shuntaro Machida
发明人： Hiroshi Fukuda , Shuntaro Machida
IPC分类号： H02N1/00
CPC分类号： B06B1/0292
摘要： A technique capable of obtaining an ultrasonic transducer at high sensitivity in which a plurality of ultrasonic oscillators M1 each comprising a lower electrode fixed above a substrate, a diaphragm opposed to the substrate with a cavity being put therebetween, and an upper electrode disposed to the diaphragm are arranged above one identical substrate to constitute an ultrasonic transducer and a concentric convex corrugated region having a center identical with the center for the diaphragm is disposed to the diaphragm in an outer side of the cavity exceeding 70% for the radius thereof.
摘要翻译：一种能够以高灵敏度获得超声波换能器的技术，其中多个超声波振荡器M1各自包括固定在基板上的下电极，与其间具有空腔的基板相对的隔膜以及设置在隔膜上的上电极布置在一个相同的基板之上以构成超声波换能器，并且具有与隔膜中心相同的中心的同心的凸形波纹状区域设置在空腔的外侧，对于其半径超过70％。

23. 发明申请

US20060070449A1 Semiconductor device embedded with pressure sensor and manufacturing method thereof 有权
标题翻译：嵌入压力传感器的半导体器件及其制造方法
公开(公告)号：US20060070449A1
公开(公告)日：2006-04-06
申请号：US11237897
申请日：2005-09-29
申请人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
发明人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
IPC分类号： G01L9/00
CPC分类号： G01L9/0073
摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.
摘要翻译：提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。形成在下电极上的氧化硅膜的一部分是空腔。在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

24. 发明申请

US20050186801A1 Method of manufacture of semiconductor integrated circuit 失效
标题翻译：半导体集成电路的制造方法
公开(公告)号：US20050186801A1
公开(公告)日：2005-08-25
申请号：US11104441
申请日：2005-04-13
申请人： Shouochi Uno , Atsushi Maekawa , Takashi Yunogami , Kazutami Tago , Kazuo Nojiri , Shuntaro Machida , Takafumi Tokunaga
发明人： Shouochi Uno , Atsushi Maekawa , Takashi Yunogami , Kazutami Tago , Kazuo Nojiri , Shuntaro Machida , Takafumi Tokunaga
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/44 , H01L21/4763 , H01L21/768 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02126 , H01L21/0217 , H01L21/022 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3122 , H01L21/76802 , H01L21/76807 , H01L21/76808 , H01L21/7681 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76835
摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.
摘要翻译：在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为通过使有机绝缘膜在基于CF的气体/ N 2 / Ar气中进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以便抑制在凹陷的底部形成异常形状，在有机绝缘膜上形成光致抗蚀剂膜，然后用光致抗蚀剂膜作为蚀刻掩模形成凹部。

25. 发明授权

US09941817B2 Ultrasonic transducer and ultrasonic diagnostic equipment using the same 有权
公开(公告)号：US09941817B2
公开(公告)日：2018-04-10
申请号：US13879439
申请日：2011-10-13
申请人： Taiichi Takezaki , Shuntaro Machida
发明人： Taiichi Takezaki , Shuntaro Machida
IPC分类号： H02N1/08 , A61B8/00 , B06B1/02 , G01N29/24 , H04R19/04
CPC分类号： H02N1/08 , A61B8/4483 , A61B8/4494 , B06B1/0292 , G01N29/2406 , H04R19/04
摘要： High transfer sound pressure and high reception sensitivity are realized, and reliability is improved in terms of long term operation, in a capacitive detector-type ultrasonic transducer (CMUT). The ultrasonic transducer, which has a lower electrode (201), a hollow portion (202) that is formed on the lower electrode and surrounded by insulating films (209,208), an upper electrode (205) that is formed on the hollow portion, and a plurality of insulating film projections (204) that are formed in the hollow portion (202), comprises a plurality of rigid members (203) that are formed on the hollow portion, either the lower electrode (201) and/or the upper electrode (205) is disposed in a position that does not overlap with the insulating film projections (204) when viewed from the upper surface by carving out the portion that overlaps with the insulating film projections (204), and the respective rigid members (203) are disposed such that a region is present that overlaps with the insulating film projections (204) when viewed from the upper surface.

26. 发明授权

US08753279B2 Ultrasound probe and ultrasound imaging device 有权
标题翻译：超声探头和超声成像装置
公开(公告)号：US08753279B2
公开(公告)日：2014-06-17
申请号：US13386120
申请日：2010-08-11
申请人： Hiroki Tanaka , Shuntaro Machida
发明人： Hiroki Tanaka , Shuntaro Machida
IPC分类号： A61B8/00 , A61B8/14
CPC分类号： B06B1/0292
摘要： Spurious response resulting from a high-order vibration mode that occurs when the cell shape of a capacitive micro-machined ultrasonic transducer is anisotropic is reduced. Assuming that a ratio between a long direction (l) and a short direction (w) of a diaphragm forming a capacitive micro-machined ultrasonic transducer is a representative aspect ratio (l/w), the representative aspect ratio is set to a value at which a dip of 6 dB or greater would not be formed within a transmit and receive bandwidth of a probe. Alternatively, the representative aspect ratio is so set that there would be six or more vibration modes for which the value obtained by dividing the frequency of a vibration mode having an odd number of anti-nodes by a fundamental mode frequency would be 2 or less.
摘要翻译：当电容式微加工的超声波换能器的电池形状是各向异性时，由高阶振动模式产生的杂散响应减小。假定形成电容式微加工超声波振子的隔膜的长方向（l）与短路方向（w）之间的比率为代表性的纵横比（l / w），将代表性纵横比设定为在探头的发射和接收带宽内不会形成6dB或更大的下降。替代地，代表性纵横比被设置为将具有六个或更多个振动模式，通过将具有奇数个反节点的振动模式的频率除以基本模式频率而获得的值将为2或更小。

27. 发明授权

US08294225B2 Ultrasonic transducer and manufacturing method 有权
标题翻译：超声波换能器及制造方法
公开(公告)号：US08294225B2
公开(公告)日：2012-10-23
申请号：US12407414
申请日：2009-03-19
申请人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki
发明人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki
IPC分类号： H01L21/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, an insulation film covering the lower electrodes, plural hollow parts formed to overlap the lower electrodes on the insulation film, an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译：本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。在包括多个下电极的超声波换能器中，覆盖下电极的绝缘膜，形成为与绝缘膜上的下电极重叠的多个中空部，填充中空部之间的间隙的绝缘膜，覆盖中空部的绝缘膜，绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连，中空部分和绝缘膜的表面被平坦化到相同的高度。

28. 发明授权

US07512038B2 Ultrasonic transducer and manufacturing method 有权
标题翻译：超声波换能器及制造方法
公开(公告)号：US07512038B2
公开(公告)日：2009-03-31
申请号：US11671040
申请日：2007-02-05
申请人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki
发明人： Shuntaro Machida , Hiroyuki Enomoto , Yoshitaka Tadaki
IPC分类号： H04R19/00
CPC分类号： B06B1/0292 , Y10T29/49005
摘要： This invention provides a technique whereby, even if a step is produced by splitting a lower electrode into component elements, resistance increase of an upper electrode, damage to a membrane and decrease of dielectric strength between an upper electrode and the lower electrode, are reduced. In an ultrasonic transducer comprising plural lower electrodes, —an insulation film covering the lower electrodes, —plural hollow parts formed to overlap the lower electrodes on the insulation film, —an insulation film filling the gaps among the hollow parts, an insulation film covering the hollow parts and insulation film, plural upper electrodes formed to overlap the hollow parts on the insulation film and plural interconnections joining them, —the surfaces of the hollow parts and insulation film are flattened to the same height.
摘要翻译：本发明提供一种技术，即使通过将下部电极分割成成分元件而产生台阶，也能够降低上部电极的电阻增加，膜的损伤以及上部电极与下部电极之间的介电强度的降低。在包括多个下电极的超声波换能器中， - 覆盖下电极的绝缘膜， - 形成为与绝缘膜上的下电极重叠的 - 中空部分， - 填充中空部分之间的间隙的绝缘膜，覆盖中空部分和绝缘膜，形成为与绝缘膜上的中空部分重叠的多个上电极和连接它们的多个互连， - 中空部分和绝缘膜的表面被平坦化到相同的高度。

29. 发明授权

US07451656B2 Semiconductor device embedded with pressure sensor and manufacturing method thereof 有权
标题翻译：嵌入压力传感器的半导体器件及其制造方法
公开(公告)号：US07451656B2
公开(公告)日：2008-11-18
申请号：US11878243
申请日：2007-07-23
申请人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
发明人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
IPC分类号： G01L9/00 , G01L9/16
CPC分类号： G01L9/0073
摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.
摘要翻译：提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。形成在下电极上的氧化硅膜的一部分是空腔。在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

30. 发明申请

US20080001239A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20080001239A1
公开(公告)日：2008-01-03
申请号：US11767602
申请日：2007-06-25
申请人： Hiroyuki Enomoto , Katsuya Hayano , Shuntaro Machida
发明人： Hiroyuki Enomoto , Katsuya Hayano , Shuntaro Machida
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： G01S7/52079 , G01S7/5208 , H01L28/40
摘要： The performance of a sensor in a semiconductor device can be improved. A plurality of oscillators forming an ultrasonic sensor are arranged on a main surface of a semiconductor chip. A negative-type photosensitive insulating film which protects the oscillators is deposited on an uppermost layer of the semiconductor chip. At the time of exposure for forming an opening in the photosensitive insulating film, the semiconductor chip is divided into a plurality of exposure areas and exposed, and then, the exposure areas are jointed so that the entire area is exposed. At this time, a stitching exposure area is arranged so that a center of the stitching exposure area in a width direction in the joint portion of the adjacent exposure areas is positioned at a center of a line which connects centers of oscillators located above and below the stitching exposure area.
摘要翻译：可以提高半导体器件中的传感器的性能。形成超声波传感器的多个振荡器设置在半导体芯片的主表面上。保护振荡器的负型感光绝缘膜沉积在半导体芯片的最上层。在曝光用于在感光绝缘膜中形成开口的时刻，将半导体芯片分割为多个曝光区域并曝光，然后将曝光区域接合，使得整个区域被曝光。此时，布置缝合曝光区域，使得相邻曝光区域的接合部分中的宽度方向上的缝合曝光区域的中心位于连接位于上方和下方的振荡器的中心的线的中心拼接曝光区域。

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