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21. 发明授权

US06337531B1 Surface-acoustic-wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06337531B1
公开(公告)日：2002-01-08
申请号：US09504911
申请日：2000-02-16
申请人： Hideaki Nakahata , Masashi Narita , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Masashi Narita , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H01L4104
CPC分类号： H03H9/02582 , H03H9/02543
摘要： A surface-acoustic-wave (SAW) device that has not only an increased propagation velocity of SAWs but also an increased electromechanical coupling coefficient of 20% or more. The SAW device comprises a diamond substrate 10, a KNbO3 layer 30, and IDTs 40. The KNbO3 layer 30 is composed of a single crystal having the layer thickness and the crystal orientation that are controlled so as to obtain a propagation velocity of 5,000 m/s or more and an electromechanical coupling coefficient of 20% or more for the SAW in a specified mode.
摘要翻译：一种表面声波（SAW）器件，其不仅具有增加的SAW的传播速度，而且增加了机电耦合系数的20％以上。 SAW器件包括金刚石衬底10，KNbO 3层30和IDT 40.KNbO 3层30由具有层厚度和晶体取向的单晶组成，以获得传播速度为5000m / s以上，在特定模式下，SAW的机电耦合系数为20％以上。

22. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

23. 发明授权

US5838090A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5838090A
公开(公告)日：1998-11-17
申请号：US972162
申请日：1997-11-17
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H3/08 , H03H3/10 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/00
CPC分类号： H03H9/02582
摘要： An object of the present invention is to improve an SAW propagation velocity V, an electromechanical coupling coefficient (K.sup.2), and a delay time temperature coefficient (TCD) to achieve a high-frequency SAW device and power saving and size reduction of the device. An SAW device according to the present invention includes at least diamond as a substrate material, a c-axis oriented polycrystalline LiNbO.sub.3 layer, arranged on the diamond, an SiO.sub.2 layer arranged on the LiNbO.sub.3 layer, and an interdigital transducer and uses an SAW in an nth mode (n=0, 1, 2: wavelength: .lambda. .mu.m). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), and the thickness of the SiO.sub.2 layer is t.sub.2 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda.) and kh.sub.2 =2.pi.(t.sub.2 /.lambda.) fall within predetermined ranges. In addition, the mode of the SAW is selected. With this arrangement, an SAW device having a propagation velocity (V) of 7,000 m/s or more, an electromechanical coupling coefficient (K.sup.2) of 2% or more, and a coefficient TCD of .+-.10 ppm/.degree.C. or less, which is the stability of the device frequency with respect to the temperature, can be provided.
摘要翻译：本发明的目的是提高SAW传播速度V，机电耦合系数（K2）和延迟时间温度系数（TCD），以实现高频SAW器件，并且节省设备的功率和尺寸。根据本发明的SAW器件至少包括作为衬底材料的金刚石，布置在金刚石上的c轴取向的多晶LiNbO 3层，布置在LiNbO 3层上的SiO 2层，以及叉指换能器，并且使用第n个模式（n = 0,1,2：波长：λm）。当LiNbO 3层的厚度为t1（μm），SiO 2层的厚度为t2（μm）时，kh1 =2π（t1 /λ），kh2 =2π（t2 /λ）落在规定的范围内范围。此外，选择SAW的模式。根据该结构，具有传播速度（V）为7000m / s以上，机电耦合系数（K2）为2％以上，系数TCD为+/- 10ppm /℃的SAW器件，或可以提供相对于温度的装置频率的稳定性。

24. 发明授权

US5777422A Diamond-ZnO surface acoustic wave device having relatively thinner ZnO piezoelectric layer 失效
标题翻译：具有较薄的ZnO压电层的金刚石 - ZnO表面声波器件
公开(公告)号：US5777422A
公开(公告)日：1998-07-07
申请号：US720369
申请日：1996-09-27
申请人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Hiroyuki Kitabayashi , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer thinner ZnO layer, which can be operated at higher frequency, with superior characteristics including less energy loss. The first SAW device according to the present invention comprises a layer constitution shown in FIG. 23, wherein, for 0th mode surface acoustic wave having a wavelength .lambda., a parameter kh3 =(2.pi./.lambda.)t3 satisfies: 0.0470.ltoreq.kh3.ltoreq.0.0625, and wherein a parameter kh1 =(2.pi./.lambda.)t1 and a parameter kh2=(2.pi./.lambda.)t2 are given within a region A-B-C-D-E-F-A in a two-dimensional Cartesian coordinate graph having ordinate axis of the kh1 and abscissa axis of kh2, the outer edge of the region A-B-C-D-E-F-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, and F, and lines A-B, B-C, C-D, D-E, E-F and F-A, as shown in a two-dimensional Cartesian coordinate graph of FIG. 3.
摘要翻译：本发明涉及一种SAW器件，其包括可以以更高频率操作的金刚石层更薄的ZnO层，具有包括较少能量损失的优异特性。根据本发明的第一SAW器件包括图1所示的层结构。 23，其中，对于具有波长λ的第0模式声表面波，参数kh3 =（2π/λ）t3满足：0.0470≤kh3≤0.0625，并且其中参数kh1 =（2π/λ） t1和参数kh2 =（2 pi /λ）t2在具有kh1和横坐标轴kh2的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFA内给出，区域ABCDEFA的外边缘由a 由点A，B，C，D，E和F以及线AB，BC，CD，DE，EF和FA组成的笛卡尔坐标中的闭合链，如图2的二维笛卡尔坐标图所示。 3。

25. 发明授权

US5225398A Method for forming an oxide superconducting film having different crystal orientation on different regions of a Si substrate 失效
标题翻译：在SI基板的不同区域形成具有不同晶体取向的氧化物超导膜的方法
公开(公告)号：US5225398A
公开(公告)日：1993-07-06
申请号：US857550
申请日：1992-03-26
申请人： Hidenori Nakanishi , Shin-ichi Shikata , Itozaki Hideo
发明人： Hidenori Nakanishi , Shin-ichi Shikata , Itozaki Hideo
IPC分类号： C01G1/00 , C01G3/00 , C04B41/89 , C23C14/06 , C30B29/22 , H01B12/06 , H01L39/24
CPC分类号： H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731
摘要： A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

26. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

27. 发明授权

US5646468A Diamond-LiTaO.sub.3 surface acoustic wave device 失效
标题翻译： Diamond-LiTaO3弹性表面波装置
公开(公告)号：US5646468A
公开(公告)日：1997-07-08
申请号：US660902
申请日：1996-06-07
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H03H9/00 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer and an LiTaO.sub.3 layer, which can be operated at the frequency of 3 GHz or higher, with superior durability and less energy loss. The SAW device for 1st mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: a diamond layer, an interdigital transducer formed onto the diamond layer, and a polycrystalline C-axis-oriented LiTaO.sub.3 layer formed over the interdigital transducer; wherein the SAW device satisfies a relationship of 0.4.ltoreq.kh.sub.1 .ltoreq.1.2, where a parameter kh.sub.1 is defined as kh.sub.1 =2.pi.(t.sub.1 /.lambda.), and t.sub.1 (.mu.m) is the thickness of the LiTaO.sub.3 layer.
摘要翻译：本发明涉及一种包括金刚石层和LiTaO 3层的SAW器件，其可以以3GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。根据本发明的波长λ（μm）的第一模式表面声波的SAW器件包括：金刚石层，形成在金刚石层上的叉指换能器，以及形成在该金刚石层上的多晶C轴取向的LiTaO 3层叉指换能器其中所述SAW器件满足0.4≤kh1≤1.2的关系，其中参数kh1被定义为kh1 =2π（t1 /λ），并且t1（μm）是LiTaO3层的厚度。

28. 发明授权

US5393680A MIS electrode forming process 失效
标题翻译： MIS电极形成工艺
公开(公告)号：US5393680A
公开(公告)日：1995-02-28
申请号：US736967
申请日：1991-07-30
申请人： Shin-ichi Shikata
发明人： Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/336 , H01L21/285 , H01L21/306
CPC分类号： H01L29/66522 , H01L21/28264
摘要： There is disclosed a process for forming a MIS electrode by forming an insulation film on a substrate of a III-V compound semiconductor, and applying an electrode material thereto, a surface of the substrate being treated with a phosphoric acid-based etchant and selenium or sulfur-passivated, and then an insulation film being formed.
摘要翻译：公开了一种通过在III-V族化合物半导体的衬底上形成绝缘膜，并向其上施加电极材料，用基于磷酸的蚀刻剂和硒处理的衬底的表面形成MIS电极的方法，或硫钝化，然后形成绝缘膜。

29. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

30. 发明授权

US5891519A Surface acoustic wave device and diamond base material for the same 失效
标题翻译：表面声波装置和金刚石基材相同
公开(公告)号：US5891519A
公开(公告)日：1999-04-06
申请号：US839606
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.
摘要翻译：一种用于表面声波装置的金刚石基材，其包括：低电阻率基材和设置在低电阻率基材上的厚度为5-50μm的高电阻金刚石层。

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