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21. 发明授权

US07764552B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07764552B2
公开(公告)日：2010-07-27
申请号：US12085158
申请日：2006-11-07
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G11C11/1675 , G11C11/1693 , G11C11/1697 , Y10T307/826
摘要： A semiconductor integrated circuit is provided that can prevent an internal voltage from the voltage generating circuit from varying during a long term. The semiconductor integrated circuit of the present invention includes a voltage generating circuit configured to generate a reference voltage; a function circuit configured to operate by using the reference voltage; a first capacitance connected to a first node between the voltage generating circuit and the function circuit; and a switch provided between the voltage generating circuit and the first node. The switch is in a turned-off state at least for a period during which the function circuit is in an activated state.
摘要翻译：提供一种可以防止来自电压产生电路的内部电压在长期内变化的半导体集成电路。本发明的半导体集成电路包括：电压产生电路，被配置为产生参考电压; 功能电路，被配置为通过使用所述参考电压进行操作; 连接到所述电压产生电路和所述功能电路之间的第一节点的第一电容; 以及设置在电压产生电路和第一节点之间的开关。至少在功能电路处于激活状态的期间，开关处于截止状态。

22. 发明申请

US20090262571A1 Magnetic random access memory and operating method of magnetic random access memory 有权
标题翻译：磁随机存取存储器和磁随机存取存储器的操作方法
公开(公告)号：US20090262571A1
公开(公告)日：2009-10-22
申请号：US12308062
申请日：2007-06-01
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , G11C11/14 , G11C11/416
CPC分类号： G11C11/1659 , G11C11/1655 , G11C11/1675
摘要： A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current Iw is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.
摘要翻译：磁性随机存取存储器包括：第一和第二布线，多个第三布线，多个存储单元和终端单元。第一和第二布线沿Y方向延伸。多个第三配线沿X方向延伸。对应于第一和第二布线和第三布线之间的交叉点设置存储单元。终端单元设置在多个存储单元之间并连接到第一和第二布线。存储单元包括晶体管和磁阻元件。晶体管串联连接在第一和第二布线之间，并根据第三布线的信号进行控制。磁阻元件连接到晶体管连接到的布线。在写入操作时，当写入电流Iw通过晶体管从第一和第二布线中的一个提供给另一个时，端接单元接地。

23. 发明申请

US20060158945A1 Readout circuit for semiconductor storage device 有权
标题翻译：半导体存储装置读出电路
公开(公告)号：US20060158945A1
公开(公告)日：2006-07-20
申请号：US11384920
申请日：2006-03-20
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C7/00
CPC分类号： G11C13/004 , G11C7/06 , G11C11/16 , G11C11/1673 , G11C13/0061 , G11C2013/0047 , G11C2013/0054 , G11C2013/0057 , G11C2207/066
摘要： By first readout, the current input from a selected cell 13 is converted by a preamplifier 3 and a VCO 4 into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register 6. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register 7 to one another. By the use of the VCO, the integrating capacitor for the current or reference pulse generating means, so far needed, may be eliminated to assure a small area, low power consumption and fast readout.
摘要翻译：通过第一读出，来自所选单元13的当前输入由前置放大器3和VCO4转换为与当前值成反比的频率的脉冲，并且预设时间间隔内的脉冲数由计数器计数以便存储在读出值寄存器6中。然后将选定的单元写入两个存储状态之一，然后执行第二次读出。通过将存储在读出值寄存器中的第一次读出的计数值和存储在参考值寄存器7中的参考值彼此进行比较来验证所选单元的存储状态。通过使用VCO，可以消除目前需要的电流或参考脉冲发生装置的积分电容器，以确保小面积，低功耗和快速读出。

24. 发明授权

US06990015B2 Semiconductor memory device using tunneling magnetoresistive elements 有权
标题翻译：使用隧道磁阻元件的半导体存储器件
公开(公告)号：US06990015B2
公开(公告)日：2006-01-24
申请号：US10329463
申请日：2002-12-27
申请人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
发明人： Takeshi Honda , Noboru Sakimura , Tadahiko Sugibayashi
IPC分类号： G11C11/15
CPC分类号： B82Y25/00 , G11C11/16
摘要： A semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.
摘要翻译：一种半导体存储器件，其使用隧道磁阻元件作为存储器单元，并且以这样的方式消除写入裕度和读取裕度中的温度依赖性，使得能够在写入存储器单元时精确地输出写入电流。半导体存储器件被构造成使得主位线或主字线布置成垂直于位线或字线交叉，主位线选择器或主字选择器分别选择主位线或主字线布置在存储单元阵列的外部。

25. 发明授权

US08009466B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US08009466B2
公开(公告)日：2011-08-30
申请号：US12527993
申请日：2008-02-07
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A semiconductor storage device is provided with a memory array including a plurality of memory cells. The plurality of memory cells includes: first and third memory cells arranged along one of an even-numbered row and an odd-numbered row, and a second memory cell arranged along the other. Each of the plurality of memory cells includes: a first transistor comprising first and second diffusion layers; a second transistor comprising third and fourth diffusion layers; and a magnetoresistance element having one of terminals thereof connected to an interconnection layer which provides an electrical connection between the second and third diffusion layers. The fourth diffusion layer of the first memory cell is also used as the first diffusion layer of the second memory cell. In addition, the fourth diffusion layer of the second memory cell is also used as the first diffusion layer of the third memory cell.
摘要翻译：半导体存储装置设置有包括多个存储单元的存储器阵列。多个存储单元包括：沿着偶数行和奇数行中的一个排列的第一和第三存储单元，以及沿着另一列布置的第二存储单元。多个存储单元中的每一个包括：第一晶体管，包括第一和第二扩散层; 第二晶体管，包括第三和第四扩散层; 以及一个磁阻元件，其一个端子连接到互连层，该互连层提供第二和第三扩散层之间的电连接。第一存储单元的第四扩散层也用作第二存储单元的第一扩散层。此外，第二存储单元的第四扩散层也用作第三存储单元的第一扩散层。

26. 发明授权

US07692956B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07692956B2
公开(公告)日：2010-04-06
申请号：US12089090
申请日：2006-09-29
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.
摘要翻译： MRAM具有至少一个单元阵列的存储器主体（2）和检测存储器主体（2）附近的磁场的磁场检测部（4），并将检测信号输出到存储器主体（2）。在单元阵列中，具有包括多层铁结构的多个磁存储单元作为自由层的存储器主体（2）基于检测信号停止存储器主体（2）的规定的操作。

27. 发明授权

US07646628B2 Toggle magnetic random access memory and write method of toggle magnetic random access memory 有权
标题翻译：切换磁性随机存取存储器和切换磁性随机存取存储器的写入方法
公开(公告)号：US07646628B2
公开(公告)日：2010-01-12
申请号：US11815720
申请日：2006-02-08
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00
CPC分类号： G11C7/1027 , G11C11/1653 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A toggle magnetic random access memory includes a first memory array, a second memory array and a controller. The first memory array includes a plurality of first memory cells including magnetoresistive elements. The second memory array includes a plurality of second memory cells including magnetoresistive elements and differs from the first memory array in write wirings used for writing. The controller controls the first memory array and the second memory array such that a first state in which a first burst write operation in the first memory array is executed and a second state in which a second burst write operation in the second memory array is executed are alternately executed in a continuous burst write mode. Accordingly, the continuous burst write operation can be executed at the high speed without any drop in the reliability and any increase in the circuit area.
摘要翻译：切换磁性随机存取存储器包括第一存储器阵列，第二存储器阵列和控制器。第一存储器阵列包括多个包括磁阻元件的第一存储单元。第二存储器阵列包括多个包括磁阻元件的第二存储单元，并且与用于写入的写配线中的第一存储器阵列不同。控制器控制第一存储器阵列和第二存储器阵列，使得执行第一存储器阵列中的第一突发写入操作的第一状态和其中执行第二存储器阵列中的第二突发写入操作的第二状态是以连续的突发写入模式交替执行。因此，可以高速执行连续脉冲串写入操作，而不会降低可靠性和电路面积的任何增加。

28. 发明申请

US20090125787A1 Operation Method of Mram 有权
标题翻译：手法操作
公开(公告)号：US20090125787A1
公开(公告)日：2009-05-14
申请号：US12083373
申请日：2006-10-17
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C29/42 , G06F11/22 , G06F11/07
CPC分类号： G11C11/16 , G06F11/1044 , G06F11/1076 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C2029/0411 , G11C2211/5641
摘要： An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits.
摘要翻译：本发明的MRAM的操作方法存储在存储器阵列中，每个都包括符号，每个符号包括位，并且可以以符号为单位进行纠错。在操作方法中，通过使用彼此不同的参考单元来读取符号。此外，当在对应于输入地址的数据单元的错误校正码的读取数据中检测到可校正错误时，（A）对与错误位对应的数据单元中的数据进行校正，对于第一错误符号，作为一个比特的错误模式和（B）用于读取第二错误符号的参考小区中的数据被校正为第二个错误符号作为比特的错误模式。

29. 发明申请

US20090122597A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20090122597A1
公开(公告)日：2009-05-14
申请号：US12089090
申请日：2006-09-29
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.
摘要翻译： MRAM具有至少一个单元阵列的存储器主体（2）和检测存储器主体（2）附近的磁场的磁场检测部（4），并将检测信号输出到存储器主体（2）。在单元阵列中，具有包括多层铁结构的多个磁存储单元作为自由层的存储器主体（2）基于检测信号停止存储器主体（2）的规定的操作。

30. 发明申请

US20090010044A1 Toggle Magnetic Random Access Memory and Write Method of Toggle Magnetic Random Access Memory 有权
标题翻译：切换磁性随机存取存储器和切换磁性随机存取存储器的写入方法
公开(公告)号：US20090010044A1
公开(公告)日：2009-01-08
申请号：US11815720
申请日：2006-02-08
申请人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
发明人： Noboru Sakimura , Takeshi Honda , Tadahiko Sugibayashi
IPC分类号： G11C11/00 , G11C7/00 , G11C8/00
CPC分类号： G11C7/1027 , G11C11/1653 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A toggle magnetic random access memory includes a first memory array, a second memory array and a controller. The first memory array includes a plurality of first memory cells including magnetoresistive elements. The second memory array includes a plurality of second memory cells including magnetoresistive elements and differs from the first memory array in write wirings used for writing. The controller controls the first memory array and the second memory array such that a first state in which a first burst write operation in the first memory array is executed and a second state in which a second burst write operation in the second memory array is executed are alternately executed in a continuous burst write mode. Accordingly, the continuous burst write operation can be executed at the high speed without any drop in the reliability and any increase in the circuit area.
摘要翻译：切换磁性随机存取存储器包括第一存储器阵列，第二存储器阵列和控制器。第一存储器阵列包括多个包括磁阻元件的第一存储单元。第二存储器阵列包括多个包括磁阻元件的第二存储单元，并且与用于写入的写配线中的第一存储器阵列不同。控制器控制第一存储器阵列和第二存储器阵列，使得执行第一存储器阵列中的第一突发写入操作的第一状态和其中执行第二存储器阵列中的第二突发写入操作的第二状态是以连续的突发写入模式交替执行。因此，可以高速执行连续脉冲串写入操作，而不会降低可靠性和电路面积的任何增加。

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