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    • 28. 发明授权
    • Leakage-tolerant memory arrangements
    • 防漏记忆布置
    • US06628557B2
    • 2003-09-30
    • US09966193
    • 2001-09-28
    • Steven K. HsuRam Krishnamurthy
    • Steven K. HsuRam Krishnamurthy
    • G11C700
    • G11C7/12G11C11/419
    • The present invention is in the area of memory architecture. More particularly, the present invention provides a method, apparatus, machine-readable medium, and system reduce leakage current in memory. Embodiments may take advantage of the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, within the memory to limit leakage and provide for a leakage tolerant data storage technique. Embodiments may also enable the reverse bias characteristic of circuit elements, such as the reverse gate-to-source bias characteristic of a transistor, to be taken advantage of by sourcing charge from data storage elements.
    • 本发明在存储器架构的领域。 更具体地说,本发明提供一种方法,装置,机器可读介质和系统减少存储器中的泄漏电流。 实施例可以利用电路元件的反向偏置特性,例如存储器内的晶体管的反向栅极到源极偏置特性,以限制泄漏并提供泄漏容限数据存储技术。 实施例还可以使电路元件的反向偏置特性(例如晶体管的反向栅极 - 源极偏置特性)被利用来从数据存储元件中提取电荷。