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21. 发明申请

US20050153507A1 Fabrication method for a trench capacitor with an insulation collar 审中-公开
标题翻译：具有绝缘套管的沟槽电容器的制造方法
公开(公告)号：US20050153507A1
公开(公告)日：2005-07-14
申请号：US11013921
申请日：2004-12-17
申请人： Thomas Hecht , Till Schlosser , Michael Sesterhenn
发明人： Thomas Hecht , Till Schlosser , Michael Sesterhenn
IPC分类号： H01L21/265 , H01L21/76 , H01L21/8242
CPC分类号： H01L27/10867 , H01L21/26586
摘要： The present invention provides a fabrication method for a trench capacitor with an insulation collar in a substrate, which is electrically connected to the substrate on one side via a buried contact. After forming and sinking an electrically conductive filling, an insulation collar and, if appropriate, a buried contact that is connected on all sides, the following are effected: providing at least one liner layer in the trench; filling the trench with a filling made of an auxiliary material, which filling is encapsulated by the at least one liner layer in the trench; providing a mask on the filling for defining the structure of the buried contact, the mask having no projections into the trench; removing a part of the filling using the mask; removing an underlying part of the at least one liner layer for uncovering a corresponding part of the insulation collar.
摘要翻译：本发明提供了一种用于在衬底中具有绝缘套环的沟槽电容器的制造方法，其通过埋入触点在一侧电连接到衬底。在形成和下沉导电填料之后，绝缘套环以及如果合适的话，在所有侧面上连接的埋入触头都可以实现：在沟槽中提供至少一个衬垫层; 用由辅助材料制成的填充物填充沟槽，该填充物被沟槽中的至少一个衬垫层封装; 在所述填充物上设置掩模以限定所述埋入接触件的结构，所述掩模没有突起到所述沟槽中; 使用掩模去除一部分填充物; 去除所述至少一个衬垫层的下部部分以露出所述绝缘套环的对应部分。

22. 发明公开

US20240330865A1 SYSTEM AND METHOD OF COOPERATIVELY OPTIMIZING COMPENSATION BENEFITS FOR EMPLOYER AND WORKER 审中-公开
公开(公告)号：US20240330865A1
公开(公告)日：2024-10-03
申请号：US18128041
申请日：2023-03-29
申请人： Thomas Hecht
发明人： Thomas Hecht
IPC分类号： G06Q10/1057
CPC分类号： G06Q10/1057
摘要： A method for ensuring fairness in compensation to employees and contractors is provided comprising a computer determining a total budgeted cost for a time period associated with a job description. The method also comprises the computer subtracting non-cash costs from the budgeted cost for exempt employees subject to the description to calculate an employee periodic cash cost. The method also comprises the computer subtracting non-cash costs from the budgeted cost for non-exempt employees subject to the description to calculate a contractor periodic cash cost. The method also comprises the computer determining an annual salary for employees based on the employee periodic cash cost. The method also comprises the computer determining a bi-weekly wage for contractors based on the contractor periodic cash cost. The method also comprises the computer publishing annual salary information and bi-weekly wage information for use in communication regarding compensation and benefits of employee status and contractor status.

23. 发明申请

US20170314852A1 METHOD FOR CONTROLLING A COUPLED HEAT EXCHANGER SYSTEM AND HEAT EXCHANGER SYSTEM 有权
公开(公告)号：US20170314852A1
公开(公告)日：2017-11-02
申请号：US15513167
申请日：2014-10-08
申请人： Valdo Bahner , Thomas Hecht
发明人： Valdo Bahner , Thomas Hecht
IPC分类号： F25J3/04
CPC分类号： F25J3/0486 , F25J3/0409 , F25J3/042 , F25J3/04218 , F25J3/04224 , F25J3/04393 , F25J3/04412 , F25J3/04787 , F28D9/0093 , F28D2021/0033 , F28F9/26 , F28F27/02
摘要： A method for controlling a coupled heat exchanger system having a first heat exchanger block and a second heat exchanger block. A first fluid stream is divided into a first partial current and a second partial current both flowing through the heat exchanger system. A second fluid stream flows through the first heat exchanger block counter to the first partial current. A third fluid stream flows through the second heat exchanger block counter to the second partial current. An intermediate temperature is measured on one of the heat exchanger blocks. The amount of the first partial current and the second partial current is controlled based on the current value of the intermediate temperature. This control reduces the strain on the heat exchangers by changing loads while keeping fluctuations of the intermediate temperature low.

24. 发明授权

US09284176B2 Beverage dispensing apparatus with a refrigerated dispensing tube bundle and adjustable bypass manifold 有权
标题翻译：具有冷藏分配管束和可调节旁路歧管的饮料分配装置
公开(公告)号：US09284176B2
公开(公告)日：2016-03-15
申请号：US13298132
申请日：2011-11-16
申请人： Jim Tuyls , Thomas Hecht
发明人： Jim Tuyls , Thomas Hecht
IPC分类号： B67D7/80 , G01F11/28 , F25D3/00 , B67D1/00 , B67D1/08 , F28D7/00
CPC分类号： B67D1/0857 , B67D1/0084 , B67D1/0865 , B67D1/0867 , B67D1/0884 , B67D1/12 , F25D31/002 , F28D7/0008 , Y10T137/87338
摘要： Beverage dispensing apparatus, systems, and related methods are provided that have a recirculation loop to cool fluids in a dispensing tube bundle that delivers beverage fluids to a beverage dispensing assembly. A beverage dispensing apparatus includes an adjustable bypass manifold having an adjustable flow restriction that is configurable to enable the use of the beverage dispensing apparatus with different chilled soda recirculation systems. The adjustable bypass manifold includes ports for connection to the recirculation loop and ports for connection to a soda recirculation system.
摘要翻译：提供了饮料分配装置，系统和相关方法，其具有循环回路以冷却将饮料流体输送到饮料分配组件的分配管束中的流体。饮料分配装置包括具有可调节流量限制的可调旁路歧管，其可配置为能够使用具有不同的冷冻苏打再循环系统的饮料分配装置。可调旁通歧管包括用于连接到再循环回路的端口和用于连接到苏打再循环系统的端口。

25. 发明授权

US07989508B2 Process and reactor for implementing exothermic and endothermic reactions 有权
标题翻译：用于实现放热和吸热反应的工艺和反应器
公开(公告)号：US07989508B2
公开(公告)日：2011-08-02
申请号：US12418235
申请日：2009-04-03
申请人： Thomas Hecht
发明人： Thomas Hecht
IPC分类号： C07C27/00
CPC分类号： C01B3/384 , B01J19/249 , B01J2219/2462 , B01J2219/2465 , B01J2219/2479 , B01J2219/2481 , C01B3/34 , C01B2203/0216 , C01B2203/0233 , C01B2203/0811 , C10G2/32
摘要： Implementing at least one endothermic and/or exothermic reaction in a compact reactor which has passages for conducting gaseous and/or liquid media, through which passages the reactants of the endothermic or exothermic reaction as well as a heating medium or coolant are sent, whereby a) The endothermic reaction is implemented in heat exchange with a heating medium, b) The endothermic reaction is implemented in heat exchange with an exothermic reaction, or c) The exothermic reaction is implemented in heat exchange with a coolant. The heat exchange between the media mentioned in a) to c) is carried out indirectly and via a third gaseous and/or liquid medium (moderation medium).
摘要翻译：在具有用于导入气体和/或液体介质的通道的紧凑型反应器中实施至少一种吸热和/或放热反应，通过该通道将吸热或放热反应的反应物以及加热介质或冷却剂通过其传送，由此吸热反应在与加热介质的热交换中进行，b）吸热反应是在与放热反应进行热交换的情况下进行的，或c）放热反应是与冷却剂进行热交换。在a）至c）中提及的介质之间的热交换间接地通过第三气体和/或液体介质（调节介质）进行。

26. 发明申请

US20100181053A1 Plate Heat Exchanger 审中-公开
标题翻译：板式换热器
公开(公告)号：US20100181053A1
公开(公告)日：2010-07-22
申请号：US12582247
申请日：2009-10-20
申请人： Thomas Hecht , Reinhold Hoelzl , Bernd Jungfer , Thomas Bretschneider , Ekatarina Ananieva , Joerg Conradt , Guenther Koenig
发明人： Thomas Hecht , Reinhold Hoelzl , Bernd Jungfer , Thomas Bretschneider , Ekatarina Ananieva , Joerg Conradt , Guenther Koenig
IPC分类号： F28D7/00
CPC分类号： F28D9/0068 , F28D9/0093 , F28D2021/0061 , F28F3/025 , F28F21/084 , F28F2200/00 , F28F2225/04 , F28F2265/26 , F28F2270/02
摘要： A plate heat exchanger (10), in particular a brazed aluminium plate heat exchanger, has a heat exchange portion (12), which comprises two or more first passages (14a), through which a first fluid may flow, and two or more second passages (14b), through which a second fluid may flow, in such a way that heat exchange takes place between the first fluid and the second fluid. To reduce thermal stress inside the heat exchange portion (12), the heat exchange portion (12) comprises at least one layer (30) through which no fluid flows, which is arranged between two passages (14a, 14b) through which fluid may flow.
摘要翻译：板式热交换器（10），特别是钎焊铝板式热交换器，具有热交换部分（12），该热交换部分包括两个或更多个第一流体（14a），第一流体可流过该第一通道和两个或更多个第二通道第二流体可以流过的通道（14b），使得第一流体和第二流体之间发生热交换。为了减少热交换部分（12）内的热应力，热交换部分（12）包括至少一个层（30），流体不流过其中流体可流过两个通道（14a，14b）之间的流体。

27. 发明申请

US20090253815A1 Process and Reactor for Implementing Exothermic and Endothermic Reactions 有权
标题翻译：用于实施放热和吸热反应的工艺和反应器
公开(公告)号：US20090253815A1
公开(公告)日：2009-10-08
申请号：US12418235
申请日：2009-04-03
申请人： Thomas Hecht
发明人： Thomas Hecht
IPC分类号： C07C2/00 , B01J19/00
CPC分类号： C01B3/384 , B01J19/249 , B01J2219/2462 , B01J2219/2465 , B01J2219/2479 , B01J2219/2481 , C01B3/34 , C01B2203/0216 , C01B2203/0233 , C01B2203/0811 , C10G2/32
摘要： Implementing at least one endothermic and/or exothermic reaction in a compact reactor which has passages for conducting gaseous and/or liquid media, through which passages the reactants of the endothermic or exothermic reaction as well as a heating medium or coolant are sent, whereby a) The endothermic reaction is implemented in heat exchange with a heating medium, b) The endothermic reaction is implemented in heat exchange with an exothermic reaction, or c) The exothermic reaction is implemented in heat exchange with a coolant. The heat exchange between the media mentioned in a) to c) is carried out indirectly and via a third gaseous and/or liquid medium (moderation medium).
摘要翻译：在具有用于导入气体和/或液体介质的通道的紧凑型反应器中实施至少一种吸热和/或放热反应，通过该通道将吸热或放热反应的反应物以及加热介质或冷却剂通过其传送，由此吸热反应在与加热介质的热交换中进行，b）吸热反应是在与放热反应进行热交换的情况下进行的，或c）放热反应是与冷却剂进行热交换。在a）至c）中提及的介质之间的热交换间接地通过第三气体和/或液体介质（调节介质）进行。

28. 发明申请

US20080197428A1 Gate Electrode Structure, MOS Field Effect Transistors and Methods of Manufacturing the Same 有权
标题翻译：栅电极结构，MOS场效应晶体管及其制造方法
公开(公告)号：US20080197428A1
公开(公告)日：2008-08-21
申请号：US11675460
申请日：2007-02-15
申请人： Stefan Jakschik , Thomas Hecht
发明人： Stefan Jakschik , Thomas Hecht
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L21/28026 , H01L21/28061 , H01L21/823842 , H01L29/42372 , H01L29/4925 , H01L29/517 , H01L29/7833 , H01L29/7845
摘要： A gate electrode structure comprises at least one bi-layer, wherein each bi-layer comprises a plating film and a stress amplifier film. The plating film includes a poly-crystalline material. The stress amplifier film determines the crystallization result of the poly-crystalline material, wherein a mechanical stress induced through the plating layer is amplified. Tensile or compressive strain may be induced in a crystalline substrate. Electron or hole mobility may be increased and on-resistance characteristics of a MOS field effect transistor may be improved.
摘要翻译：栅电极结构包括至少一个双层，其中每个双层包括镀膜和应力放大膜。镀膜包括多晶材料。应力放大器膜确定多晶材料的结晶结果，其中通过镀层诱导的机械应力被放大。可能在结晶底物中诱导拉伸或压缩应变。可以增加电子或空穴迁移率，并可提高MOS场效应晶体管的导通电阻特性。

29. 发明申请

US20080182344A1 Method and system for determining deformations on a substrate 审中-公开
标题翻译：用于确定衬底上的变形的方法和系统
公开(公告)号：US20080182344A1
公开(公告)日：2008-07-31
申请号：US11699926
申请日：2007-01-30
申请人： Steffen Mueller , Alfred Kersch , Boris Habets , Michael Stadtmueller , Thomas Hecht
发明人： Steffen Mueller , Alfred Kersch , Boris Habets , Michael Stadtmueller , Thomas Hecht
IPC分类号： H01L21/66
CPC分类号： G01B21/32
摘要： A method and system determines deformations in a substrate in the manufacturing of semiconductor devices. At least one property of vertical deformations of the substrate is measured at a plurality of locations on the substrate. Afterward, an automatic computation of horizontal deformations is determined based on the measured properties of vertical deformations with a model for the deformation behavior of the substrate.
摘要翻译：一种方法和系统在半导体器件的制造中确定衬底中的变形。在衬底上的多个位置处测量衬底的垂直变形的至少一个特性。之后，基于垂直变形的测量属性，用基板的变形行为的模型来确定水平变形的自动计算。

30. 发明授权

US07268037B2 Method for fabricating microchips using metal oxide masks 有权
标题翻译：使用金属氧化物掩模制造微芯片的方法
公开(公告)号：US07268037B2
公开(公告)日：2007-09-11
申请号：US11040091
申请日：2005-01-24
申请人： Stefan Jakschik , Thomas Hecht , Uwe Schröder , Matthias Goldbach
发明人： Stefan Jakschik , Thomas Hecht , Uwe Schröder , Matthias Goldbach
IPC分类号： H01L21/8242
CPC分类号： H01L27/1087 , H01L21/31111 , H01L21/3141 , H01L21/31616 , H01L29/66181
摘要： A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.
摘要翻译：用于修改半导体部分的方法包括覆盖这些部分以保持不掺杂金属氧化物，例如氧化铝。然后，在未被氧化铝覆盖的那些部分中，例如从气相掺杂半导体。最后，再次选择性地除去氧化铝，例如使用热磷酸。由硅，氧化硅或氮化硅形成的半导体表面的部分保留在晶片上。

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