专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070012927A1 Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier 有权
标题翻译：具有扩散阻挡层的辐射发射光电子半导体芯片
公开(公告)号：US20070012927A1
公开(公告)日：2007-01-18
申请号：US11477408
申请日：2006-06-28
申请人： Norbert Linder
发明人： Norbert Linder
IPC分类号： H01L31/00 , H01L33/00 , H01L29/06 , H01L31/12 , H01L27/15
CPC分类号： H01L33/30 , H01L33/02 , H01L33/305 , H01L33/32 , H01L2924/0002 , H01S5/3063 , H01S5/3072 , H01L2924/00
摘要： In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a first undoped layer (5) and a second undoped layer (6), the second undoped layer adjoining the first undoped layer (5) and succeeding the first undoped layer (5) as seen from the active layer (3), the first undoped layer (5) and the second undoped layer (6) in each case contain aluminum, the aluminum proportion being greater in the first undoped layer (5) than in the second undoped layer (6). The layer sequence (8) advantageously acts as a diffusion barrier for the dopant of the p-doped layer.
摘要翻译：在包括有源层（3）至少一个p掺杂层（9）和包括多个未掺杂层（4,5,6,7）的层序列（8）的辐射发射光电半导体芯片中，其是布置在所述有源层（3）和所述p掺杂层（9）之间并且包含至少第一未掺杂层（5）和第二未掺杂层（6），所述第二未掺杂层邻接所述第一未掺杂层（5）和随后从活性层（3）看到的第一未掺杂层（5），第一未掺杂层（5）和第二未掺杂层（6）在每种情况下都含有铝，铝比例在第一未掺杂层（ 5）比在第二未掺杂层（6）中。层序列（8）有利地用作p掺杂层的掺杂剂的扩散势垒。

22. 发明授权

US06973113B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US06973113B2
公开(公告)日：2005-12-06
申请号：US10444800
申请日：2003-05-23
申请人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
发明人： Tony Albrecht , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/183 , H01S3/091
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/18388 , H01S5/4056 , H01S2301/166
摘要： An optically pumped semiconductor laser device having a substrate (1) having a first main area (2) and a second main area (3), with at least one pump laser (11) being arranged on the first main area (2). The semiconductor laser device comprises a vertically emitting laser (4) having a resonator having a first mirror (9) being arranged on the side of the first main area (2) and a second mirror (20) being arranged on the side of the second main area (3) of the substrate (1).
摘要翻译：一种光泵浦半导体激光装置，其具有具有第一主区域（2）和第二主区域（3）的基板（1），其中至少一个泵浦激光器（11）布置在第一主区域（2）上。半导体激光器件包括具有谐振器的垂直发射激光器（4），该谐振器具有布置在第一主区域（2）侧面上的第一反射镜（9）和布置在第二主体侧面上的第二反射镜（20）基板（1）的主区域（3）。

23. 发明授权

US06947460B2 Optically pumpable surface-emitting semiconductor laser device 失效
公开(公告)号：US06947460B2
公开(公告)日：2005-09-20
申请号：US10402814
申请日：2003-03-28
申请人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
发明人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/00 , H01S3/08 , H01S3/091 , H01S3/092
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

24. 发明授权

US08598604B2 Optoelectronic component 有权
标题翻译：光电元件
公开(公告)号：US08598604B2
公开(公告)日：2013-12-03
申请号：US12088250
申请日：2006-09-27
申请人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
发明人： Dominik Eisert , Norbert Linder , Raimund Oberschmid , Dirk Berben , Frank Jermann , Martin Zachau
IPC分类号： H04N9/31
CPC分类号： H01L33/46 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.
摘要翻译：公开了一种具有半导体本体的包括有源半导体层序列的光电子部件，其适于产生从半导体本体的正面发射的第一波长的电磁辐射。该元件还包括在其发射方向上跟随半导体本体的第一波长转换物质，其将第一波长的辐射转换成不同于第一波长的第二波长的辐射，以及在有源半导体层序列之间的第一选择性反射层以及选择性地反射第二波长的辐射并对第一波长的辐射透明的第一波长转换物质。

25. 发明授权

US07816163B2 Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US07816163B2
公开(公告)日：2010-10-19
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

26. 发明授权

US07778300B2 Optically pumped semiconductor device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US07778300B2
公开(公告)日：2010-08-17
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

27. 发明授权

US07653111B2 Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权
标题翻译：光学泵浦，表面发射半导体激光器件及其制造方法
公开(公告)号：US07653111B2
公开(公告)日：2010-01-26
申请号：US11249094
申请日：2005-10-12
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译：本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体结构体。辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。还规定了制造本发明的半导体激光器件的方法。

28. 发明授权

US07443898B2 Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US07443898B2
公开(公告)日：2008-10-28
申请号：US11210263
申请日：2005-08-23
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

29. 发明授权

US07317202B2 Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip 有权
标题翻译：用于制造外延结构元件层序列和光电子半导体芯片的方法
公开(公告)号：US07317202B2
公开(公告)日：2008-01-08
申请号：US10952154
申请日：2004-09-28
申请人： Alexander Behres , Norbert Linder , Bernd Mayer
发明人： Alexander Behres , Norbert Linder , Bernd Mayer
IPC分类号： H01L31/00 , H01L33/00
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02543 , H01L33/0062
摘要： A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements.
摘要翻译：一种用于制造基于在衬底或缓冲层上具有第一组V元件的第一III / V族化合物半导体材料体系的外延组分层序列的技术，其包括基于第二III / V族化合物半导体材料体系的材料，第二组V元件，其不同于第一组V元件。在施加外延组分层序列之前，将具有第一和第二III / V化合物半导体材料层的至少一层层序施加到衬底或缓冲层，第一和第二III / V族化合物半导体材料层具有不同的组合物彼此并且包含第一和第二组V元素。

30. 发明申请

US20070090396A1 Semiconductor substrate of GaAs and semiconductor device 审中-公开
标题翻译： GaAs和半导体器件的半导体衬底
公开(公告)号：US20070090396A1
公开(公告)日：2007-04-26
申请号：US11541089
申请日：2006-09-28
申请人： Norbert Linder , Gunther Gronninger , Peter Heidborn , Klaus Streubel , Siegmar Kugler
发明人： Norbert Linder , Gunther Gronninger , Peter Heidborn , Klaus Streubel , Siegmar Kugler
IPC分类号： H01L31/00
CPC分类号： H01L33/04 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L33/025 , H01L33/30
摘要： A semiconductor substrate (1) of GaAs with a semiconductor layer sequence (2) applied on top. The semiconductor layer sequence (2) contains a plurality of semiconductor layers (3, 4, 5, 6, 7) of Al1−yGayAs1−xPx with 0≦x≦1 and 0≦y≦1, the phosphorus component x in a number of the semiconductor layers respectively being greater than in a neighboring semiconductor layer lying thereunder in the direction of growth. Such a semiconductor substrate may be advantageously used as a quasi-substrate substrate (8) for growing further semiconductor layers (28) which have a smaller lattice constant than GaAs.
摘要翻译：具有半导体层序列（2）的GaAs的半导体衬底（1）施加在顶部。半导体层序列（2）包含多个Al 1-y Ga y As 1的半导体层（3,4,5,6,7） -x Px，其中0 <= x <= 1且0 <= y <= 1，多个半导体层中的磷成分x分别大于在其下方的相邻半导体层中在成长。这种半导体衬底可以有利地用作准衬底基板（8），用于生长具有比GaAs更小的晶格常数的其它半导体层（28）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式