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21. 发明申请

US20070034888A1 Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
标题翻译：电磁辐射发射半导体芯片及其生产程序
公开(公告)号：US20070034888A1
公开(公告)日：2007-02-15
申请号：US11585632
申请日：2006-10-24
申请人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
发明人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46
摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.
摘要翻译：提出了发射电磁辐射的半导体芯片。芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

22. 发明授权

US07655488B2 Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips 有权
标题翻译：制造多个电磁辐射半导体芯片的方法
公开(公告)号：US07655488B2
公开(公告)日：2010-02-02
申请号：US12290097
申请日：2008-10-27
申请人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
发明人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/46
摘要： Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.
摘要翻译：用于制造发射电磁辐射的半导体芯片的方法，其中为了提高发射电磁辐射的半导体芯片的光输出，纹理反射表面被集成在半导体芯片的p侧上。半导体芯片具有基于GaN的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和布置在这两个半导体层之间的电磁辐射产生区域。面向辐射产生区域的p导电半导体层的表面设置有三维金字塔状结构。镜面层布置在整个这个有纹理的表面上。在镜面层和导电性半导体层之间形成纹理反射面。

23. 发明申请

US20060289854A1 OPTICAL SEMICONDUCTOR DEVICE WITH MULTIPLE QUANTUM WELL STRUCTURE 有权
标题翻译：具有多个量子阱结构的光学半导体器件
公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

24. 发明申请

US20100294957A1 Radiation-Emitting Semiconductor Body 有权
标题翻译：辐射发射半导体体
公开(公告)号：US20100294957A1
公开(公告)日：2010-11-25
申请号：US12680620
申请日：2008-08-28
申请人： Tony Albrecht , Stefan Bader , Berthold Hahn
发明人： Tony Albrecht , Stefan Bader , Berthold Hahn
IPC分类号： H01L33/30
CPC分类号： H01L33/06 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.
摘要翻译：描述了具有用于产生第一波长（λ1）的辐射的有源层（2）和包括量子阱结构（4）的辐射发射半导体本体（1），所述量子阱结构（4）包括量子层结构（5）和阻挡层结构（6）。再发射层旨在通过吸收阻挡层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

25. 发明授权

US07556974B2 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US07556974B2
公开(公告)日：2009-07-07
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a）提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

26. 发明授权

US07442966B2 Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
标题翻译：电磁辐射发射半导体芯片及其生产程序
公开(公告)号：US07442966B2
公开(公告)日：2008-10-28
申请号：US11585632
申请日：2006-10-24
申请人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
发明人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46
摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.
摘要翻译：提出了发射电磁辐射的半导体芯片。芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

27. 发明授权

US07425237B2 Method for depositing a material on a substrate wafer 有权
标题翻译：在衬底晶片上沉积材料的方法
公开(公告)号：US07425237B2
公开(公告)日：2008-09-16
申请号：US10696882
申请日：2003-10-30
申请人： Stefan Bader , Hans-Jurgen Lugauer , Volker Haerle , Berthold Hahn
发明人： Stefan Bader , Hans-Jurgen Lugauer , Volker Haerle , Berthold Hahn
IPC分类号： C30B23/00
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , H01L21/02378 , H01L21/0254 , H01L21/02658 , H01L21/324
摘要： The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).
摘要翻译：材料（3）在生长区域（4）上的沉积可能是高度温度敏感的。为了降低衬底晶片（1）的生长区域（4）上的温度不均匀性，将热辐射吸收层（2）施加在与生长相对的衬底晶片（1）的后侧（5）上区域（4）。热辐射吸收层（2）在加热源的光谱范围内表现出良好的辐射吸收。由于半导体材料（特别是AllnGaN）的沉积可能导致（取决于沉积温度）沉积材料的不同发射波长，所以使用热辐射吸收层（2）可以产生较小的沉积的发射波长分布材料（3）。

28. 发明申请

US20070012944A1 GaN-based light emitting-diode chip and a method for producing same 审中-公开
标题翻译： GaN基发光二极管芯片及其制造方法
公开(公告)号：US20070012944A1
公开(公告)日：2007-01-18
申请号：US11508504
申请日：2006-08-23
申请人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow
发明人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/40 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.
摘要翻译：一种LED芯片，包括导电和无辐射基板，其中外延层序列在其p侧的基本上整个区域上设置有反射的，可粘合的p接触层。衬底在其主表面上设置为背离外延层序列，接触金属化仅覆盖所述主表面的一部分，并且来自芯片的光的解耦通过衬底的主表面的裸露区域进行并通过芯片侧面。另外的LED芯片仅具有外延层。 p型外延层在主表面的大致整个区域上设置有背向n导电外延层的反射式可结合p接触层，并且n导电外延层设置在其主表面上远离p导电外延层，其中n接触层仅覆盖所述主表面的一部分。来自芯片的光的解耦通过n导电外延层的主表面的裸露区域和芯片侧进行。

29. 发明授权

US07129528B2 Electromagnetic radiation emitting semiconductor chip and procedure for its production 有权
标题翻译：电磁辐射发射半导体芯片及其生产程序
公开(公告)号：US07129528B2
公开(公告)日：2006-10-31
申请号：US10671854
申请日：2003-09-25
申请人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
发明人： Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46
摘要： Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more likely not to be totally reflected.
摘要翻译：发射电磁辐射的半导体芯片及其制造方法。为了提高发射电磁辐射的半导体芯片的光输出，在半导体芯片的p侧上集成纹理化反射面（131）。半导体芯片具有基于GaN的外延生产的半导体层堆叠（1），其包括n导电半导体层（11），p导电半导体层（13）和电磁辐射产生区域（12），其布置在这两个半导体层（11,13）之间。背离辐射产生区域（12）的p导电半导体层（13）的表面设置有三维金字塔状结构（15）。镜面层（40）布置在整个这个纹理表面上。在镜面层（40）和导电性半导体层（13）之间形成纹理反射面（131）。纹理反射表面（131）可以通过在反射表面（131）上双重反射之后的光束（3）更多地增加在辐射输出耦合表面（111）处解耦的光量可能不会被完全反映。

30. 发明授权

US09525399B2 Planarized electrode for improved performance in bulk acoustic resonators 有权
标题翻译：平面化电极，用于改善体声波谐振器的性能
公开(公告)号：US09525399B2
公开(公告)日：2016-12-20
申请号：US13286038
申请日：2011-10-31
申请人： Dariusz Burak , Phil Nikkel , John Choy , Alexandre Shirakawa , Stefan Bader
发明人： Dariusz Burak , Phil Nikkel , John Choy , Alexandre Shirakawa , Stefan Bader
IPC分类号： H03H9/15 , H03H9/17 , H03H3/02
CPC分类号： H03H9/173
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板中的空腔; 设置在所述空腔上的第一电极; 与第一电极相邻设置的平坦化层; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极。

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