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21. 发明授权

US08048782B1 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08048782B1
公开(公告)日：2011-11-01
申请号：US12855631
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

22. 发明申请

US20120040493A1 PLASMA DEPOSITION OF AMORPHOUS SEMICONDUCTORS AT MICROWAVE FREQUENCIES 失效
标题翻译：在微波频率下等离子体沉积非晶半导体
公开(公告)号：US20120040493A1
公开(公告)日：2012-02-16
申请号：US12855645
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

23. 发明授权

US08222125B2 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
标题翻译：微波等离子体沉积非晶半导体
公开(公告)号：US08222125B2
公开(公告)日：2012-07-17
申请号：US12855637
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L21/20 , H01L21/205 , C23C16/00 , C23C16/24 , C23C16/50 , C23C16/511
CPC分类号： H01L31/03767 , C23C16/24 , C23C16/452 , H01J37/32211 , H01J37/3244 , H01J37/32477 , H01J37/3277 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/028 , H01L31/065 , H01L31/076 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

24. 发明申请

US20120040492A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 失效
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120040492A1
公开(公告)日：2012-02-16
申请号：US12855637
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： H01L31/03767 , C23C16/24 , C23C16/452 , H01J37/32211 , H01J37/3244 , H01J37/32477 , H01J37/3277 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/028 , H01L31/065 , H01L31/076 , H01L31/202 , H01L31/204 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的非预期沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以激活或激发它们到有助于形成薄膜材料的反应状态。导管物理地隔离在微波功率传递的点处将反应或以其他方式组合以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。合适的沉积物质包括含有硅，锗，氟和/或氢的前体。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

25. 发明授权

US08101245B1 Plasma deposition of amorphous semiconductors at microwave frequencies 失效
公开(公告)号：US08101245B1
公开(公告)日：2012-01-24
申请号：US12855645
申请日：2010-08-12
申请人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R. Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： C23C16/00
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

26. 发明授权

US07023009B2 Electrically programmable memory element with improved contacts 有权
标题翻译：具有改进触点的电可编程存储元件
公开(公告)号：US07023009B2
公开(公告)日：2006-04-04
申请号：US10848999
申请日：2004-05-19
申请人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyi , Patrick Klersy , Boil Pashmakov
发明人： Sergey A. Kostylev , Stanford R. Ovshinsky , Wolodymyr Czubatyi , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L47/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
摘要翻译：一种电操作的存储元件，包括相变存储器材料，第一电触头和第二电触头。电接触中的至少一个是具有电耦合到存储材料的侧壁的薄膜层。

27. 发明授权

US5536947A Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom 失效
标题翻译：电可擦除，直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5536947A
公开(公告)日：1996-07-16
申请号：US506630
申请日：1995-07-25
申请人： Patrick K. Klersy , David A. Strand , Stanford R. Ovshinsky
发明人： Patrick K. Klersy , David A. Strand , Stanford R. Ovshinsky
IPC分类号： C23C14/06 , G11C11/56 , G11C16/02 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. Each contact includes (1) a thin-film layer, preferably titanium cabonitride or titanium siliconitride, disposed adjacent to the memory material, used as a diffusion barrier to inhibit foreign material from entering the memory material, and (2) a thin-film layer, preferably a Ti--W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.
摘要翻译：电操作的直接覆盖多单位单元存储元件。存储元件包括限定单个单元存储元件的一定量的存储器材料。记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在动态范围内被设置为多个电阻值之一的能力，以便向单个单元提供多位存储能力，以及（3）至少一个通过所选择的电气单位在动态范围内的任何电阻值，而不管材料的先前电阻值如何，要设置的丝状部分。存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。每个触点包括（1）设置在存储材料附近的用作阻挡异物进入存储材料的扩散阻挡层的薄膜层，优选钛碳氮化钛或钛硅化钛，以及（2）薄膜层优选Ti-W合金，其设置在远离存储材料的位置，用于提供铝电迁移，扩散的屏障，并在铝界面处提供欧姆接触。

28. 发明授权

US4106939A Imaging and recording of information utilizing a tellurium tetrahalide complex of an aromatic amine 失效
标题翻译：使用芳族胺的四卤化碲配合物成像和记录信息
公开(公告)号：US4106939A
公开(公告)日：1978-08-15
申请号：US838574
申请日：1977-10-03
申请人： Yew C. Chang , Stanford R. Ovshinsky , David A. Strand
发明人： Yew C. Chang , Stanford R. Ovshinsky , David A. Strand
IPC分类号： C07D307/33 , C07D307/80 , C07D311/16 , C07D333/22 , C07D333/56 , C07D345/00 , G03C1/73 , G03C5/24 , G03C1/00
CPC分类号： C07D307/33 , C07D307/80 , C07D311/16 , C07D333/22 , C07D333/56 , C07D345/00 , G03C1/734 , C07C2103/26 , Y10S428/913 , Y10T428/31504
摘要： Selected areas of a layer comprising an imaging material in the form of a tellurium tetrahalide adduct of an aromatic amine, exemplified by a tellurium tetrachloride adduct of dimethyl aniline, which adduct is free from any diazo groups, in the presence of a spectral photosensitizer, are subjected to the imaging effect of imaging energy, and of development, advantageously of developing energy, causing a change in the tellurium-organic imaging material in the imaged areas accompanied by a change in the detectable characteristic of the imaging material in the imaged areas. The aforesaid imaging material is especially advantageously extended in a matrix of a polymeric or resinous film-forming material. The invention in its generally most advantageous form involves an imaging step employing imaging energy and producing a latent image, followed by a heat development step to produce the detectable recorded information or image.
摘要翻译：包含芳族胺的四卤化碲形式的成像材料的成像材料的一部分区域，例如在光谱光敏剂存在下，加合物不含任何重氮基团的二甲基苯胺的四氯化碲加合物。经受有利于显影能量的成像能量和显影的成像效应，引起成像区域中的碲 - 有机成像材料的变化，伴随着成像区域中成像材料的可检测特性的变化。上述成像材料特别有利地在聚合物或树脂成膜材料的基质中延伸。本发明通常最有利的形式涉及使用成像能量并产生潜像的成像步骤，随后是热显影步骤以产生可检测的记录信息或图像。

29. 发明授权

US5128099A Congruent state changeable optical memory material and device 失效
标题翻译：兼容状态可变光学记忆材料和器件
公开(公告)号：US5128099A
公开(公告)日：1992-07-07
申请号：US657170
申请日：1991-02-15
申请人： David A. Strand , Stanford R. Ovshinsky
发明人： David A. Strand , Stanford R. Ovshinsky
IPC分类号： B41M5/26 , G03C1/705 , G11B7/0055 , G11B7/24 , G11B7/243 , G11C7/00 , G11C13/04
CPC分类号： G11C13/04 , G11B7/00557 , G11B7/24 , G11B7/243 , G11C13/047 , G11C7/005 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.

30. 发明申请

US20130037755A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
公开(公告)号：US20130037755A1
公开(公告)日：2013-02-14
申请号：US13620930
申请日：2012-09-15
申请人： Stanford R. Ovshinsky
发明人： Stanford R. Ovshinsky
IPC分类号： H01B1/04
CPC分类号： H01L31/20 , H01J37/32192 , H01J37/32229 , H01J37/32357 , H01J37/3244 , H01J2237/3326 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/035218 , H01L31/03767 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows that couple microwave energy to deposition species. The apparatus includes a microwave applicator with one or more conduits that carry deposition species. The applicator transfers microwave energy to the deposition species to energize them to a reactive state. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer and deliver the microwave-excited species to a deposition chamber. Supplemental material streams may be delivered to the deposition chamber without passing through the microwave applicator and may combine with deposition species exiting the conduits to form a thin film material. Precursors for the microwave-excited deposition species include fluorinated forms of silicon. Precursors for supplemental material streams include hydrogenated forms of silicon.

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