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21. 外观设计

USD519059S1 Motor vehicle and/or toy replica thereof 有权
公开(公告)号：USD519059S1
公开(公告)日：2006-04-18
申请号：US29218967
申请日：2004-12-09
申请人： Kenji Tomida , Hideo Kouyama , Koichi Sumigama , Saburo Hazumi , Atsushi Hirose , Naoyuki Nakamura
设计人： Kenji Tomida , Hideo Kouyama , Koichi Sumigama , Saburo Hazumi , Atsushi Hirose , Naoyuki Nakamura

22. 发明授权

US06665148B2 Magnetic head apparatus with IC chip mounted on suspension for increased heat diffusion and magnetic disk apparatus having magnetic head apparatus 失效
标题翻译：具有安装在用于增加热扩散的悬置上的IC芯片的磁头装置和具有磁头装置的磁盘装置
公开(公告)号：US06665148B2
公开(公告)日：2003-12-16
申请号：US09924965
申请日：2001-08-09
申请人： Masashi Shiraishi , Takeshi Wada , Mitsuyoshi Kawai , Takashi Honda , Norikazu Ota , Takao Matsumoto , Atsushi Hirose
发明人： Masashi Shiraishi , Takeshi Wada , Mitsuyoshi Kawai , Takashi Honda , Norikazu Ota , Takao Matsumoto , Atsushi Hirose
IPC分类号： G11B555
CPC分类号： G11B5/4853 , G11B5/4826 , H01L2224/16225 , H01L2224/73204
摘要： A magnetic head apparatus including a magnetic head slider having at least one thin film magnetic head element, a suspension mounting the magnetic head slider on one face thereof, an IC chip mounted with a circuit for the thin film magnetic head element and a support arm fixedly supporting the suspension in which the IC chip is mounted on the one face of the suspension and is thermally coupled to the support arm.
摘要翻译：一种磁头装置，包括具有至少一个薄膜磁头元件的磁头滑动器，在其一个表面上安装磁头滑块的悬架，安装有用于薄膜磁头元件的电路的IC芯片和固定地支撑悬架，其中IC芯片安装在悬架的一个面上，并且热耦合到支撑臂。

23. 发明授权

US5398055A System for detecting stray light 失效
标题翻译：杂散光检测系统
公开(公告)号：US5398055A
公开(公告)日：1995-03-14
申请号：US92462
申请日：1993-07-16
申请人： Masamitsu Nonomura , Atsushi Hirose , Kouji Horiba
发明人： Masamitsu Nonomura , Atsushi Hirose , Kouji Horiba
IPC分类号： H01J9/42 , H04N7/18 , H04N17/04
CPC分类号： H04N7/18
摘要： An apparatus for detecting undesired stray light generated in an electronic device, comprising a high sensitive photosensing device for picking up an image of the electronic device which emits the stray light and an image pickup filter for eliminating undesired signal components contained in the sensed output by the high sensitive photosensing device.
摘要翻译：一种用于检测在电子设备中产生的不期望的杂散光的装置，包括用于拾取发射杂散光的电子设备的图像的高灵敏度感光装置和用于消除由感测输出中包含的不期望的信号分量的图像拾取滤波器高灵敏感光装置。

24. 发明授权

US09117958B2 Photoelectric conversion device comprising photoelectric conversion element 有权
标题翻译：光电转换装置包括光电转换元件
公开(公告)号：US09117958B2
公开(公告)日：2015-08-25
申请号：US13162699
申请日：2011-06-17
申请人： Yukinori Shima , Atsushi Hirose
发明人： Yukinori Shima , Atsushi Hirose
IPC分类号： H01L31/00 , H01L31/105 , H01L31/0216 , H01L31/09
CPC分类号： H01L31/105 , H01L31/02162 , H01L31/095 , H01L31/1055
摘要： It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.
摘要翻译：本发明的目的是提供一种光功率消耗和安装面积减小并且产率提高的光电转换装置，并且进一步提供一种减少制造工艺和制造成本的光电转换装置。光电转换装置包括用于输出对应于照度的光电流的光电转换元件和对应于照度的电阻变化电阻。在光电转换装置中，光电转换元件的一个端子和电阻器的一个端子串联电连接; 光电转换元件的另一个端子连接到高电源电位; 电阻的另一端连接到低电源电位; 并且在光电转换元件或电阻器的光接收表面侧设置光度调节单元以调节照度。

25. 发明授权

US08913050B2 Photoelectric conversion device and electronic device having the same 有权
标题翻译：光电转换装置和具有该光电转换装置的电子装置
公开(公告)号：US08913050B2
公开(公告)日：2014-12-16
申请号：US13365305
申请日：2012-02-03
申请人： Hideaki Shishido , Atsushi Hirose
发明人： Hideaki Shishido , Atsushi Hirose
IPC分类号： G09G3/22 , H04N5/335 , H01L27/32 , G01J1/42 , G09G3/32 , G05F3/26 , G01J1/02 , G01J1/44 , H01L27/146 , H04N5/235 , H01L27/12
CPC分类号： H01L27/1214 , G01J1/02 , G01J1/0209 , G01J1/42 , G01J1/44 , G05F3/262 , G09G3/3241 , H01L27/1266 , H01L27/14609 , H01L27/14687 , H04N5/2351
摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
摘要翻译：在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。

26. 发明授权

US07838812B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07838812B2
公开(公告)日：2010-11-23
申请号：US12350271
申请日：2009-01-08
申请人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
发明人： Kazuo Nishi , Tatsuya Arao , Atsushi Hirose , Yuusuke Sugawara , Naoto Kusumoto , Daiki Yamada , Hidekazu Takahashi
IPC分类号： H01J40/14 , H03F3/08 , H03K17/78 , H04N3/14
CPC分类号： H01L31/102 , G01J1/44 , H01L31/145 , H04N5/2351
摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
摘要翻译：本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。根据这样的光电转换装置，能够检测弱光到强光的光。

27. 发明申请

US20100237229A1 PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置和光电转换装置提供的电子装置
公开(公告)号：US20100237229A1
公开(公告)日：2010-09-23
申请号：US12794820
申请日：2010-06-07
申请人： Makoto Yanagisawa , Atsushi Hirose
发明人： Makoto Yanagisawa , Atsushi Hirose
IPC分类号： H03F3/08 , H01L31/105 , H01L31/102
CPC分类号： H04N5/35518 , G01J1/4204 , G01J1/44 , H01L27/14609
摘要： An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.
摘要翻译：包括在光电转换装置中的光电转换元件的输出端子连接到二极管连接的MOS晶体管的漏极端子和栅极端子，并且在MOS晶体管的栅极端子处产生的电压Vout被检测到根据在光电转换元件处产生的电流Ip。可以直接检测在MOS晶体管的栅极端子处产生的电压Vout，使得可以比通过连接负载电阻器将输出电压转换为电流的方法等等来扩大输出范围。

28. 发明授权

US07705283B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US07705283B2
公开(公告)日：2010-04-27
申请号：US11436086
申请日：2006-05-18
申请人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
发明人： Tatsuya Arao , Atsushi Hirose , Kazuo Nishi , Yuusuke Sugawara
IPC分类号： G01J1/44 , H03F3/08 , H01L31/112 , G01R19/00 , H01L31/00 , H04N3/14
CPC分类号： G01J1/18 , G01J1/44 , G01J2001/4406 , G09G3/3611 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14609 , H01L27/14618 , H01L27/14643 , H01L27/14692 , H01L31/101 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
摘要翻译：本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。通过本发明，可以检测从弱光到强光的光。

29. 外观设计

USD605584S1 Photoelectric conversion element 有权
公开(公告)号：USD605584S1
公开(公告)日：2009-12-08
申请号：US29322860
申请日：2008-08-13
申请人： Yuusuke Sugawara , Atsushi Hirose
设计人： Yuusuke Sugawara , Atsushi Hirose

30. 发明授权

US07537976B2 Manufacturing method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07537976B2
公开(公告)日：2009-05-26
申请号：US11410259
申请日：2006-04-25
申请人： Atsushi Hirose
发明人： Atsushi Hirose
IPC分类号： H01L21/84 , H01L21/00 , H01L21/285 , H01L21/288 , H01L21/445
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , Y10T428/24421
摘要： The invention provides a manufacturing method of a circular thin film transistor of which shape is more controlled than the conventional case, while simplifying the steps and reducing the manufacturing time and cost by forming a circular thin film transistor by a maskless process such as a droplet discharge method. In the invention, a circular thin film transistor having a circular electrode is formed by stacking concentric circular thin films over a substrate by a maskless process such as a droplet discharge method. Moreover, a circular thin film transistor having a circular semiconductor layer may be formed by stacking concentric circular thin films over a substrate by a maskless process such as a droplet discharge method.
摘要翻译：本发明提供了一种圆形薄膜晶体管的制造方法，其形状比常规情况更受控制，同时通过诸如液滴放电的无掩膜工艺形成圆形薄膜晶体管来简化步骤并缩短制造时间和成本，方法。在本发明中，具有圆形电极的圆形薄膜晶体管通过诸如液滴喷射方法的无掩模工艺在衬底上堆叠同心圆形薄膜而形成。此外，具有圆形半导体层的圆形薄膜晶体管可以通过诸如液滴排放法的无掩模工艺在衬底上堆叠同心圆形薄膜来形成。

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