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21. 发明申请

US20050084994A1 Light-emitting device and method for manufacturing light-emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050084994A1
公开(公告)日：2005-04-21
申请号：US10967281
申请日：2004-10-19
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01L21/00 , H01L27/32 , H01L51/50 , H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： It is an object of the present invention to provide a method for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The present invention provides a method for manufacturing a light-emitting device comprising the steps of forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer, wherein the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：本发明的目的是提供一种制造具有高内部量子效率，消耗较少功率，具有高亮度并具有高可靠性的发光装置的方法。本发明提供一种制造发光器件的方法，包括以下步骤：形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成氧化硅密度较高的阻挡层比在导电透光氧化物层上的导电透光氧化物层中的导电透光氧化物层中形成具有导电透光氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热的阳极，并且在所述电致发光层上形成阴极，其中所述阻挡层形成在所述电致发光层和所述导电透光氧化物层之间。

22. 发明授权

US09006729B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09006729B2
公开(公告)日：2015-04-14
申请号：US12943558
申请日：2010-11-10
申请人： Kengo Akimoto , Junichiro Sakata , Yoshiaki Oikawa , Shunpei Yamazaki
发明人： Kengo Akimoto , Junichiro Sakata , Yoshiaki Oikawa , Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45
CPC分类号： H01L29/7869 , H01L29/45
摘要： It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.
摘要翻译：本发明的目的是提供一种用于制造具有使用氧化物半导体形成并且具有稳定的电特性的薄膜晶体管的高度可靠的半导体器件的方法。半导体器件包括与栅电极重叠的氧化物半导体膜，其间插入有栅极绝缘膜; 以及与氧化物半导体膜接触的源电极和漏电极。源电极和漏极包括含有一种或多种具有低电负性的金属如钛，镁，钇，铝，钨和钼的混合物，金属化合物或合金。源电极和漏电极中的氢浓度是氧化物半导体膜中的氢的浓度的1.2倍，优选为5倍以上。

23. 发明授权

US08841662B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08841662B2
公开(公告)日：2014-09-23
申请号：US12917548
申请日：2010-11-02
申请人： Shunpei Yamazaki , Suzunosuke Hiraishi , Kengo Akimoto , Junichiro Sakata
发明人： Shunpei Yamazaki , Suzunosuke Hiraishi , Kengo Akimoto , Junichiro Sakata
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02178 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869
摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.
摘要翻译：在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。源极和漏极电极层具有两层或多层的层叠结构，其中使用功函数低于氧化物半导体层的功函数或合金的金属形成与氧化物半导体层接触的层含有这样的金属。使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为组分，包含任何这些元素组合的合金等。

24. 发明授权

US08470650B2 Semiconductor device and manufacturing method for the same 有权
公开(公告)号：US08470650B2
公开(公告)日：2013-06-25
申请号：US12906553
申请日：2010-10-18
申请人： Kengo Akimoto , Junichiro Sakata , Shunpei Yamazaki
发明人： Kengo Akimoto , Junichiro Sakata , Shunpei Yamazaki
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

25. 发明授权

US08218099B2 Liquid crystal display device and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08218099B2
公开(公告)日：2012-07-10
申请号：US12871162
申请日：2010-08-30
申请人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
IPC分类号： G02F1/136
CPC分类号： H01L27/1225
摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.
摘要翻译：本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。

26. 发明申请

US20110108834A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110108834A1
公开(公告)日：2011-05-12
申请号：US12917569
申请日：2010-11-02
申请人： Shunpei Yamazaki , Suzunosuke Hiraishi , Kengo Akimoto , Junichiro Sakata
发明人： Shunpei Yamazaki , Suzunosuke Hiraishi , Kengo Akimoto , Junichiro Sakata
IPC分类号： H01L29/24
CPC分类号： H01L29/45 , G02F1/1368 , H01L29/7869
摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.
摘要翻译：在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。源极和漏极层具有两层或多层的层叠结构，其中使用其功函数低于氧化物半导体层的功函数的金属的氧化物形成与氧化物半导体层接触的层或含有这种金属的合金的氧化物。使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为组分，包含任何这些元素组合的合金等。

27. 发明授权

US07850501B2 Light-emitting device and method for manufacturing light-emitting device 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07850501B2
公开(公告)日：2010-12-14
申请号：US11687204
申请日：2007-03-16
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

28. 发明授权

US07205716B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07205716B2
公开(公告)日：2007-04-17
申请号：US10967281
申请日：2004-10-19
申请人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
发明人： Shunpei Yamazaki , Kengo Akimoto , Junichiro Sakata , Yoshiharu Hirakata , Norihito Sone
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译：提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

29. 发明授权

US08329506B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08329506B2
公开(公告)日：2012-12-11
申请号：US12618944
申请日：2009-11-16
申请人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
发明人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/28079 , H01L21/28158 , H01L29/04 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
摘要翻译：本发明的目的是提供一种适用于半导体器件的氧化物半导体。或者，另一目的是提供一种使用氧化物半导体的半导体器件。提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

30. 发明申请

US20060091397A1 Display device and method for manufacturing the same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20060091397A1
公开(公告)日：2006-05-04
申请号：US11253738
申请日：2005-10-20
申请人： Kengo Akimoto , Hotaka Maruyama , Norihito Sone , Hisao Ikeda , Junichiro Sakata , Satoshi Seo
发明人： Kengo Akimoto , Hotaka Maruyama , Norihito Sone , Hisao Ikeda , Junichiro Sakata , Satoshi Seo
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/3244 , H01L27/3258 , H01L51/5052 , H01L51/5218 , H01L2251/5315
摘要： It is an object of the invention to manufacture a highly reliable display device at a low cost with high yield. A display device of the invention includes: a first reflective electrode layer; and a second transparent electrode layer with an electroluminescent layer interposed therebetween, wherein the electroluminescent layer has a layer containing an organic compound and an inorganic compound, and the first electrode layer contains an aluminum alloy containing at least one or more selected from the group consisting of molybdenum, titanium, and carbon.
摘要翻译：本发明的目的是以低成本，高产率制造高可靠性的显示装置。本发明的显示装置包括：第一反射电极层; 以及其间插入有电致发光层的第二透明电极层，其中，所述电致发光层具有含有有机化合物和无机化合物的层，所述第一电极层含有含有选自以下的至少一种以上的铝合金：钼，钛和碳。

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