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    • 23. 发明申请
    • Perpendicular magnetic recording medium and magnetic storage device using the same
    • 垂直磁记录介质和使用其的磁存储装置
    • US20090257144A1
    • 2009-10-15
    • US12384850
    • 2009-04-08
    • Ichiro TamaiKiwamu Tanahashi
    • Ichiro TamaiKiwamu Tanahashi
    • G11B21/02G11B5/667
    • G11B5/66G11B5/65
    • Embodiments of the present invention provide a perpendicular magnetic recording medium that reduces the noise of granular recording layers, obtains sufficient overwrite characteristic that suppresses an increase in the magnetic cluster size, and allows high-density recording. According to one embodiment, a perpendicular magnetic recording medium comprising substrate having thereon at least soft magnetic layer, nonmagnetic intermediate layer, a perpendicular recording layer and protective layer formed in that order. The perpendicular recording layer consists of three or more layers of first recording layer, a second recording layer, and a third recording layer from the side nearer to the substrate. The first recording layer and the second recording layer have a granular structure comprising a grain boundary of an oxide surrounding ferromagnetic crystal grains containing Co and Pt, and the third recording layer has a non-granular structure mainly comprising Co and not containing an oxide. The grain boundary of the first recording layer contains Si, Cr and oxygen, and at least one element selected from Ti, Ta and Nb, and the grain boundary of the second recording layer contains Cr and oxygen, or contains Cr and oxygen and at least one element selected from Si, W and V.
    • 本发明的实施例提供一种降低粒状记录层噪声的垂直磁记录介质,获得抑制磁簇大小增加的足够的重写特性,并允许高密度记录。 根据一个实施例,一种垂直磁记录介质,其包括至少在其上形成有软磁性层,非磁性中间层,垂直记录层和保护层的基板。 垂直记录层由三层或三层以上的第一记录层,第二记录层和第三记录层组成。 第一记录层和第二记录层具有包含包含Co和Pt的铁磁晶粒的氧化物的晶界的颗粒结构,并且第三记录层具有主要包含Co且不含氧化物的非颗粒结构。 第一记录层的晶界包含Si,Cr和氧,并且选自Ti,Ta和Nb中的至少一种元素,第二记录层的晶界包含Cr和氧,或含有Cr和氧,至少 一个元素选自Si,W和V.
    • 28. 发明申请
    • MAGNETIC RECORDING MEDIUM USING LAYERS HAVING HIGHER- AND LOWER-HK ANISOTROPIC MAGNETIC FIELDS
    • 使用具有高,低HK HKS磁场的层的磁记录介质
    • US20110122525A1
    • 2011-05-26
    • US12938214
    • 2010-11-02
    • Hiroaki NemotoKiwamu TanahashiHiroyuki Nakagawa
    • Hiroaki NemotoKiwamu TanahashiHiroyuki Nakagawa
    • G11B5/66G11B21/02
    • G11B5/65G11B5/66
    • According to one embodiment, a magnetic recording medium includes a magnetic recording layer formed above a substrate, comprising: a first magnetic layer formed from a [Co/Pt]n multilayered film, wherein the first magnetic layer has a face-centered cubic (fcc) (111) crystal structure, the (111) direction being perpendicular to a film surface thereof, and a second magnetic layer comprising a CoCrPt or CoCrPt alloy film formed above the first magnetic layer, wherein the second magnetic layer has a hexagonal close packed (hcp) (00.1) crystal structure, the (00.1) direction being perpendicular to a film surface thereof. According to another embodiment, a system includes a magnetic recording medium as described above, a magnetic head for reading from and/or writing to the magnetic recording medium, a magnetic head slider for supporting the magnetic head, and a control unit coupled to the magnetic head for controlling operation of the magnetic head.
    • 根据一个实施例,磁记录介质包括形成在衬底上的磁记录层,包括:由[Co / Pt] n多层膜形成的第一磁性层,其中第一磁性层具有面心立方(fcc )(111)晶体结构,(111)方向垂直于其膜表面,以及第二磁性层,其包含形成在第一磁性层上方的CoCrPt或CoCrPt合金膜,其中第二磁性层具有六方密堆积 hcp)(00.1)晶体结构,(00.1)方向垂直于其膜表面。 根据另一个实施例,一种系统包括如上所述的磁记录介质,用于从磁记录介质读取和/或写入磁头的磁头,用于支撑磁头的磁头滑块,以及耦合到磁头的控制单元 用于控制磁头的操作。
    • 29. 发明申请
    • Method for manufacturing perpendicular magnetic recording medium
    • 制造垂直磁记录介质的方法
    • US20060086606A1
    • 2006-04-27
    • US11253431
    • 2005-10-18
    • Yoshinori HondaTakayuki IchiharaHiroyuki NakagawaKiwamu Tanahashi
    • Yoshinori HondaTakayuki IchiharaHiroyuki NakagawaKiwamu Tanahashi
    • C23C14/32C23C14/00
    • G11B5/851C23C14/0688C23C14/345C23C14/3492G11B5/65G11B5/667G11B5/7325H01J37/34H01J37/3426
    • Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO2 for deposition on the intermediate layer. The top surface of the insulation material (SiO2) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.
    • 本发明的实施方式提供一种制造方法,其可以通过防止从目标物喷射颗粒的异常放电,从而以高产率制造高质量的垂直磁记录介质。 在一个实施例中,当形成垂直磁记录介质时,将DC脉冲施加到目标。 在溅射期间的反转时间(反转时间)期间,施加相反极性的电压。 在溅射期间,施加负电压,将目标表面偏压到负电位,导致Ar +与CoCrPt和SiO 2 2碰撞并溅射以沉积在中间层上。 目标上的绝缘材料(SiO 2)的顶表面由Ar +充电以具有大于目标电压的电压。 然而,由于在非溅射期间由于施加到靶的正电压而使绝缘材料的表面上的电荷中和,因此可以防止电弧。