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21. 发明申请

US20100311221A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20100311221A1
公开(公告)日：2010-12-09
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

22. 发明申请

US20100301455A1 METHOD FOR PRODUCING A BONDED SUBSTRATE 有权
标题翻译：生产粘结基材的方法
公开(公告)号：US20100301455A1
公开(公告)日：2010-12-02
申请号：US12744567
申请日：2008-11-27
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L29/12 , H01L21/762
CPC分类号： H01L21/187 , H01L21/76254 , H01L29/1054
摘要： A method for producing a bonded substrate having a Si1-xGex (0
摘要翻译：一种具有Si1-xGex（0＆lt; x＆lt; 1E; 1）膜的键合衬底的制造方法，其中已经引入了比以往任何时候的双轴应变。具体地，该方法至少包括以下步骤：提供施主晶片和具有低于施主晶片的热膨胀系数的处理晶片，将氢和惰性气体中的任何一种或两者的离子注入到供体晶片中以形成离子注入层，在施主晶片和处理晶片的至少一个接合表面上执行等离子体激活处理，将施主晶片接合到处理晶片，通过对离子注入施加机械冲击来分裂供体晶片层，在施主晶片的分割面上进行表面处理，并在分割面上外延生长Si1-xGex（0

23. 发明申请

US20100244182A1 METHOD OF MANUFACTURING LAMINATED WAFER BY HIGH TEMPERATURE LAMINATING METHOD 有权
标题翻译：通过高温层压法制造层压陶瓷的方法
公开(公告)号：US20100244182A1
公开(公告)日：2010-09-30
申请号：US12685194
申请日：2010-01-11
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L21/84 , H01L21/76254 , H01L21/76256
摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.
摘要翻译：为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合，发生。一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

24. 发明申请

US20100227452A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100227452A1
公开(公告)日：2010-09-09
申请号：US12161819
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时，晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

25. 发明申请

US20090061557A1 METHOD FOR MANUFACTURING SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件制造基板的方法
公开(公告)号：US20090061557A1
公开(公告)日：2009-03-05
申请号：US12282176
申请日：2007-03-12
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L31/18
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.
摘要翻译：在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入层。然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发，相生长以提供锗基晶体。锗基晶体层的表面和支撑基板的表面接合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

26. 发明申请

US20080299742A1 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US20080299742A1
公开(公告)日：2008-12-04
申请号：US12153519
申请日：2008-05-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/86
CPC分类号： H01L21/76254 , H01L21/3065 , H01L22/12 , H01L22/20 , H01L2924/014
摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
摘要翻译：公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

27. 发明申请

US20080194078A1 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20080194078A1
公开(公告)日：2008-08-14
申请号：US12010711
申请日：2008-01-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/20
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： To obtain a semiconductor substrate having a high-quality Ge-based epitaxial film in a large area, a SiGe mixed crystal buffer layer and a Ge epitaxial film is grown on a main surface of a Si substrate 10. Although high-density defects are introduced in the Ge epitaxial film 11 from an interface between the Ge epitaxial film 11 and the Si substrate 10, the Ge epitaxial film is subjected to a heat treatment at a temperature of not less than 700° C. and not more than 900° C. to cause threading dislocations 12 to change into dislocation-loop defects 12′ near the interface between the Ge epitaxial film 11 and the Si substrate. A main surface of at least one of the Ge epitaxial film 11 with an ion implanted layer and a support substrate 20 is then subjected to a plasma treatment or ozone treatment for the purpose of surface cleaning, surface activation, and the like, after which the main surfaces of the Ge epitaxial film 11 and the support substrate 20 are appressed against and bonded to each other with their surfaces being determined as the joint surfaces. An external impact is then applied to the bonding interface, causing the Ge epitaxial film to be delaminated along a hydrogen ion implanted interface 13, thus obtaining a Ge thin film 14. A surface of the Ge thin film 14 is subsequently subjected to a final surface treatment (for example, CMP) to remove the damage caused by the hydrogen ion implantation, thus resulting in a GeOI substrate having the Ge thin film 14 on the surface thereof.
摘要翻译：为了获得大面积地具有高质量Ge基外延膜的半导体衬底，在Si衬底10的主表面上生长SiGe混晶缓冲层和Ge外延膜。虽然在Ge外延膜11和Si衬底10之间的界面上在Ge外延膜11中引入高密度缺陷，但Ge外延膜在不低于700℃的温度下进行热处理，不超过900℃导致穿透位错12变为位于Ge外延膜11和Si衬底之间的界面附近的位错环缺陷12'。为了表面清洁，表面活化等目的，对具有离子注入层的Ge外延膜11和支撑基板20中的至少一个的主表面进行等离子体处理或臭氧处理，之后， Ge外延膜11和支撑基板20的主表面以其表面被确定为接合表面而相互贴合并彼此结合。然后对接合界面施加外部冲击，使得Ge外延膜沿着氢离子注入界面13分层，从而获得Ge薄膜14。随后，对Ge薄膜14的表面进行最终表面处理（例如CMP），以消除由氢离子注入引起的损伤，从而得到其表面上具有Ge薄膜14的GeOI基板。

28. 发明申请

US20080119028A1 SOQ substrate and method of manufacturing SOQ substrate 有权
标题翻译： SOQ基板和制造SOQ基板的方法
公开(公告)号：US20080119028A1
公开(公告)日：2008-05-22
申请号：US11984184
申请日：2007-11-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/3247 , H01L21/76254 , H01L29/78603
摘要： To lower a process temperature for an SOQ substrate manufacturing process to reduce the degree of surface roughness of an SOQ film and provide a high-quality SOQ substrate.Hydrogen ions are implanted to a surface of a single crystal Si substrate 10 through an oxide film 11 to uniformly form an ion implanted layer 12 at a predetermined depth (average ion implantation depth L) from the surface of the single crystal Si substrate 10, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate 10 and quartz substrate 20, which are bonded together, to mechanically delaminate a silicon film 13 from a single crystal silicon bulk 14. In this way, the SOQ film 13 is formed on the quartz substrate 20 through the oxide film 11. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point. When measuring surface roughness of an SOQ film after performing hydrogen heat treatment on a sample having surface roughness of about 5 nm in terms of RMS average value immediately after delamination, a satisfactory measurement result of 0.3 nm or less in terms of RMS average value was obtained.
摘要翻译：为了降低SOQ基板制造工艺的工艺温度以降低SOQ膜的表面粗糙度并提供高质量的SOQ基板。通过氧化膜11将氢离子注入到单晶Si衬底10的表面，以从单晶硅衬底10的表面以预定深度（平均离子注入深度L）均匀地形成离子注入层12，以及基板的接合面进行等离子体处理或臭氧处理。对结合在一起的单晶Si衬底10和石英衬底20施加外部冲击，从而将硅膜13与单晶硅体14机械地分层。这样，SOQ膜13形成在石英基板20通过氧化膜11.为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。在对分层后的RMS平均值的表面粗糙度约为5nm的样品进行氢热处理后，测定SOQ膜的表面粗糙度，得到满意的平均值为0.3nm以下的测定结果。

29. 发明申请

US20080099065A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20080099065A1
公开(公告)日：2008-05-01
申请号：US11907902
申请日：2007-10-18
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , B29C65/00
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.
摘要翻译：公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。可以提供一种单晶硅太阳能电池，其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜，该单晶硅太阳能电池的转换特性优异，并且是由于光照射而导致的劣化较少，并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

30. 发明授权

US07011717B2 Method for heat treatment of silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US07011717B2
公开(公告)日：2006-03-14
申请号：US10929480
申请日：2004-08-31
申请人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
发明人： Norihiro Kobayashi , Shoji Akiyama , Yuuichi Matsumoto , Masaro Tamatsuka
IPC分类号： H01L31/036
CPC分类号： H01L21/3225 , Y10S438/913 , Y10S438/935 , Y10S438/955 , Y10S438/974
摘要： According to the present invention, there are provided a method for heat treatment of silicon wafers wherein a silicon wafer is subjected to a heat treatment at a temperature of from 1000° C. to the melting point of silicon in an inert gas atmosphere, and temperature decreasing in the heat treatment is performed in an atmosphere containing 1–60% by volume of hydrogen, a method for heat treatment of silicon wafers under a reducing atmosphere containing hydrogen by using a rapid heating and rapid cooling apparatus, wherein temperature decreasing rate from the maximum temperature in the heat treatment to 700° C. is controlled to be 20° C./sec or less, and a silicon wafer which has a crystal defect density of 1.0×104 defects/cm3 or more in a wafer bulk portion, a crystal defect density of 1.0×104 defects/cm3 or less in a wafer surface layer of a depth of 0.5 μm from the surface, a crystal defect density of 0.15 defects/cm2 or less on a wafer surface and surface roughness of 1.0 nm or less in terms of the P-V value. By these, crystal defects in wafer surface layers can be reduced by a simple method with a small amount of hydrogen used without degrading microroughness of wafers.
摘要翻译：根据本发明，提供了一种硅晶片的热处理方法，其中硅晶片在惰性气体气氛中在1000℃至硅熔点下进行热处理，温度热处理的降低在含有1-60体积％的氢气的气氛中进行，通过使用快速加热和快速冷却装置在含氢气的还原气氛下热处理硅晶片的方法，其中从控制到700℃的热处理的最高温度为20℃/秒以下，晶体缺陷密度为1.0×4×4×缺陷/ cm 2的硅晶片在晶片本体部分中> 3 <或更多，在深度的晶片表面层中的晶体缺陷密度为1.0×4×4×3/3或更小 0.5μm以下的晶体缺陷密度为0.15个/ cm 2以下在P-V值方面为1.0nm以下的表面粗糙度。通过这些，可以通过使用少量氢气的简单方法来降低晶片表面层中的晶体缺陷，而不降低晶片的微观粗糙度。

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