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    • 24. 发明授权
    • Force measuring device
    • 力测量装置
    • US4914611A
    • 1990-04-03
    • US57534
    • 1987-06-01
    • Masami YamanakaShinichi Inoue
    • Masami YamanakaShinichi Inoue
    • G01L1/00G01G23/48G01L1/10G01L1/26
    • G01L1/10G01G23/48G01L1/26
    • A force measuring device, such as a weighing device, having device for automatically compensating for temperature-induced zero and span deviations. The device includes force and temperature sensors for producing force and temperature indicative signals, respectively. Device for processing processes these force and temperature signals at various temperatures in no-load and reference-load conditions by regressive analysis in order to obtain and store in memory equations representing the zero and span deviations with temperature. During use of the force measuring device for measurement, the device uses the stored equations to calculate the zero and span deviations from the current temperature to correct the force indicative signal.
    • 力测量装置,例如称重装置,具有用于自动补偿温度引起的零和跨度偏差的装置。 该装置包括分别用于产生力和温度指示信号的力和温度传感器。 用于处理的装置通过回归分析在空载和参考负载条件下在各种温度下处理这些力和温度信号,以便获得并存储表示零温度和跨度偏差随温度的存储器方程式。 在使用力测量装置进行测量时,装置使用存储的方程来计算与当前温度的零点和跨度偏差,以校正力指示信号。
    • 29. 发明申请
    • RADIOACTIVE RAY DETECTING APPARATUS
    • 放射性检测装置
    • US20130241016A1
    • 2013-09-19
    • US13809903
    • 2011-07-15
    • Juhyun YuNaoyuki YamadaShinichi InoueAkihiro HirutaChihiro Ohkubo
    • Juhyun YuNaoyuki YamadaShinichi InoueAkihiro HirutaChihiro Ohkubo
    • H01L31/02
    • H01L31/02016G01T1/243H01L31/022408H01L31/115
    • A radioactive ray detecting apparatus for enabling to reduce the dead area or region where the radioactive rays cannot be detected, even if disposing the radioactive ray detectors to be dense or crowded, is provided. The radioactive ray detecting apparatus satisfies the following relationships, when assuming that distance between semiconductor elements, being provided with putting a substrate therebetween, is “XG1”, while distance from the semiconductor element of one of the radioactive ray detectors up to the semiconductor element of other radioactive ray detectors, facing to the semiconductor element and neighboring with one radioactive ray detector, is “XG2”, and distance between the semiconductor elements alighted in a Y-direction is “YG1”, and further assuming that a horizontal pitch of a predetermined pixel pitch to be used as the radioactive ray detector is “a” and a vertical pitch thereof is “b”, width of a surface of each of plural numbers of semiconductor elements, upon which radioactive rays are incident, is “c” and length thereof is “d”, and among plural numbers of intra-element pixel regions of respective one of the plural numbers of semiconductor elements, and that length of the intra-element pixel regions, which are positioned at both end portions of respective one of the plural numbers of semiconductor elements, is “e”, and length of each one of the plural numbers of intra-element pixel regions, being put between the intra-element pixel regions, which are positioned at both end portions of each of the plural numbers of semiconductor elements, is “f”, respectively: c=a−(XG1+XG2)/2 d=b−YG1=2e+(n−2)f e=b/n−YG1/2 f=b/n (however, “n” is a positive integer).
    • 即使设置致密或拥挤的放射线检测器,也能够提供能够减少无法检测放射线的死区或者区域的放射线检测装置。 放射线检测装置满足以下关系,假设设置有放置基板的半导体元件之间的距离为“XG1”,而从放射线检测器之一的半导体元件到半导体元件的半导体元件 面向半导体元件并与一个放射线检测器相邻的其他放射线检测器为“XG2”,并且在Y方向上下降的半导体元件之间的距离为“YG1”,并且进一步假设预定的 要用作放射线检测器的像素间距为“a”,其垂直间距为“b”,放射线入射的多个半导体元件中的每一个的表面的宽度为“c”,长度 是“d”,并且在多个半导体元件中的相应一个半导体元件的多个像素间像素区域中, 位于多个半导体元件的相应一个半导体元件的两端部的元件像素区域为“e”,并且多个像素内像素区域中的每一个的长度被放置在内部元件之间, 分别位于多个半导体元件的每一个的两端部的元件像素区域分别为“f”:c = a-(XG1 + XG2)/ 2 d = b-YG1 = 2e +(n-2 )fe = b / n-YG1 / 2 f = b / n(然而,“n”是正整数)。
    • 30. 发明授权
    • Method of manufacturing printed circuit board
    • 制造印刷电路板的方法
    • US08438726B2
    • 2013-05-14
    • US13083097
    • 2011-04-08
    • Shinichi InoueHiroyuki HanazonoMineyoshi HasegawaKeisuke Okumura
    • Shinichi InoueHiroyuki HanazonoMineyoshi HasegawaKeisuke Okumura
    • H05K3/02
    • H05K3/20H05K1/0393Y10T29/49117Y10T29/49144Y10T29/49155
    • A resist film is formed on a conductor layer of a two-layered base material composed of a carrier layer and the conductor layer. Next, the resist film is exposed and developed, so that an etching resist pattern is formed. A region of the conductor layer that is exposed while not covered with the etching resist pattern is removed by etching. A conductor pattern is formed by removing the etching resist pattern. Then, an adhesive layer precursor is applied on an entire surface including an upper surface of the conductor pattern. The adhesive layer precursor is exposed and developed, so that an adhesive pattern is formed on the conductor pattern. After that, a base insulating layer is joined onto the conductor pattern with the adhesive pattern sandwiched therebetween. Finally, a carrier layer is separated from the conductor pattern, so that the FPC board is manufactured.
    • 在由载体层和导体层构成的两层基材的导体层上形成抗蚀剂膜。 接下来,将抗蚀剂膜曝光和显影,从而形成抗蚀剂图案。 通过蚀刻除去未被抗蚀剂图案覆盖的露出的导体层的区域。 通过去除抗蚀剂图案形成导体图案。 然后,在包括导体图案的上表面的整个表面上施加粘合剂层前体。 粘合剂层前体被曝光和显影,使得在导体图案上形成粘合剂图案。 之后,将基底绝缘层接合到导体图案上,其中夹有粘合剂图案。 最后,将载体层与导体图案分离,从而制造FPC基板。