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21. 发明授权

US07645317B2 Mixed power for powder metallurgy, green compact thereof, and sintered body 有权
标题翻译：粉末冶金的混合动力，其生坯和烧结体
公开(公告)号：US07645317B2
公开(公告)日：2010-01-12
申请号：US12087856
申请日：2007-03-13
申请人： Takayasu Fujiura , Yasuko Yakou , Satoshi Nishida , Yuuji Taniguchi , Tetsuya Goto
发明人： Takayasu Fujiura , Yasuko Yakou , Satoshi Nishida , Yuuji Taniguchi , Tetsuya Goto
IPC分类号： B22F1/00 , B22F3/00
CPC分类号： B22F1/0059
摘要： The present invention relates to a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains a graphite powder and a carbon black, and in which a mixing ratio of the graphite powder to the carbon black is in the range of 25 to 85 parts by weight to 75 to 15 parts by weight; and a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains, as a main component, a carbon black having a dibutyl phthalate absorption of 60 mL/100 g or less and a nitrogen absorption specific surface area of 50 m2/g or less.The mixed powder for powder metallurgy of the invention is less in the dust generation and segregation of the carbon supply component. Additionally, when the mixed powder for powder metallurgy of the invention is used, a green compact and a sintered body excellent in the mechanical property can be produced.
摘要翻译：本发明涉及含有铁基粉末和碳供给成分的粉末冶金用混合粉末，其中碳供给成分含有石墨粉末和炭黑，其中石墨粉末与炭黑在25〜85重量份〜75〜15重量份的范围内; 和含有铁基粉末和碳供给成分的粉末冶金用混合粉末，其中，碳供给成分含有邻苯二甲酸二丁酯吸收60mL / 100g以下的炭黑作为主要成分，氮吸附比表面积为50m2 / g以下。本发明的粉末冶金用混合粉末在碳供给成分的粉尘产生和分离中较少。此外，当使用本发明的粉末冶金用混合粉末时，可以制造机械特性优异的生坯和烧结体。

22. 发明申请

US20080220592A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PLANARIZATION METHOD 审中-公开
标题翻译：基板处理装置，基板处理方法和基板平面化方法
公开(公告)号：US20080220592A1
公开(公告)日：2008-09-11
申请号：US12045321
申请日：2008-03-10
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Masaki Hirayama , Tetsuya Goto
IPC分类号： H01L21/3213 , H01L21/321
CPC分类号： H01L21/67115 , H01L21/3003 , H01L21/324 , H01L21/67098 , H01L21/67109 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78603
摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.
摘要翻译：衬底处理设备具有设置有用于保持待处理衬底的保持架的处理空间。在处理空间中配置氢气催化构件以面对衬底并将氢分子分解成氢原子H *。气体供给口设置在处理空间中，在与氢气催化构件相对的基板上，供给至少包含氢气的处理气体。氢催化构件和保持架上的基板之间的间隔被设定为小于氢根H *可以达到的距离。

23. 发明授权

US07325511B2 Microwave plasma processing apparatus, microwave processing method and microwave feeding apparatus 有权
标题翻译：微波等离子体处理装置，微波处理方法和微波馈电装置
公开(公告)号：US07325511B2
公开(公告)日：2008-02-05
申请号：US10450149
申请日：2002-10-18
申请人： Naohisa Goto , Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Naohisa Goto , Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32229 , H01J37/32192
摘要： A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate, wherein the waveguide has a single microwave output opening in a location corresponding to a central par of the microwave emitting member.
摘要翻译：微波等离子体处理装置包括处理容器，微波发生器，引导由微波发生器形成的微波的波导和通过相位差板发射波长压缩的微波的微波发射部件，其中波导具有单个微波输出开口在对应于微波发射部件的中心部分的位置。

24. 发明申请

US20070167001A1 Method of manufacturing a semiconductor device and method of etching an insulating film 有权
标题翻译：制造半导体器件的方法和蚀刻绝缘膜的方法
公开(公告)号：US20070167001A1
公开(公告)日：2007-07-19
申请号：US10588698
申请日：2005-02-02
申请人： Tadahiro Ohmi , Tetsuya Goto
发明人： Tadahiro Ohmi , Tetsuya Goto
IPC分类号： H01L21/4763
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138 , H01L21/76802 , H01L21/76814
摘要： During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.
摘要翻译：在蚀刻接触孔期间，不仅改变了离子辐射的能量，而且改变了气体组成，从而将蚀刻从高速蚀刻改变为低速蚀刻，从而减少了损伤。在气体组成也变化的低速蚀刻中，在接触孔的底部形成坚固的碳氟膜，并且可以在保护硅表面的同时进行蚀刻。因此，可以防止在硅表面中掺杂的杂质失活。

25. 外观设计

USD280629S Electrostatic copying machine 失效
公开(公告)号：USD280629S
公开(公告)日：1985-09-17
申请号：US486383
申请日：1983-04-19
申请人： Tetsuya Goto , Yasuhiro Saito , Toshio Umino
设计人： Tetsuya Goto , Yasuhiro Saito , Toshio Umino

26. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

27. 发明申请

US20120305072A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND BACK-CONTACT SOLAR CELL 审中-公开
标题翻译：制造半导体器件和反接触太阳能电池的方法
公开(公告)号：US20120305072A1
公开(公告)日：2012-12-06
申请号：US13516057
申请日：2010-12-09
申请人： Shigeo Fujimori , Yoshiyuki Kitamura , Takashi Ando , Tetsuya Goto
发明人： Shigeo Fujimori , Yoshiyuki Kitamura , Takashi Ando , Tetsuya Goto
IPC分类号： H01L31/18 , H01L31/0236 , H01L31/0224
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A method is provided for manufacturing a semiconductor device, wherein a p-type region and/or n-type pattern is formed on a surface of a semiconductor substrate, including ejecting at least one of etching paste, masking paste, doping paste, and electrode paste from an ejecting orifice of a nozzle toward the surface of the semiconductor substrate to form beads formed of the paste between the semiconductor substrate and the ejecting orifice and moving the semiconductor substrate relative to the nozzle thereby the paste is applied to the surface of the semiconductor substrate in a stripe shape.
摘要翻译：提供一种用于制造半导体器件的方法，其中在半导体衬底的表面上形成p型区域和/或n型图案，包括喷射蚀刻膏，掩模膏，掺杂膏和电极中的至少一种从喷嘴的喷射孔朝向半导体基板的表面粘贴，以形成由半导体基板和喷射孔之间的浆料形成的珠子，并相对于喷嘴移动半导体基板，从而将糊料施加到半导体的表面基材为条状。

28. 发明申请

US20120125376A1 WET PROCESSING APPARATUS AND WET PROCESSING METHOD 审中-公开
标题翻译：湿处理装置和湿处理方法
公开(公告)号：US20120125376A1
公开(公告)日：2012-05-24
申请号：US13381424
申请日：2010-05-27
申请人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Takenao Nemoto , Yoriyuki Murakawa , Kazuhiro Yoshikawa
发明人： Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Takenao Nemoto , Yoriyuki Murakawa , Kazuhiro Yoshikawa
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , H01L21/6708 , H01L21/6838
摘要： A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.
摘要翻译：湿式处理装置在待处理的基板的台上保持，并通过旋转台进行湿处理。基板由载物台保持，其中基板的中心偏离载物台的旋转中心，使用伯努利卡盘，其使惰性气体流到基板的背面，使得基板偏心旋转以及舞台的旋转。用于伯努利卡盘的第一气体供给通道设置在舞台的旋转轴部分，舞台还设置有与第一气体供给通道连通的第二气体供给通道，从而将惰性气体引入到背部基板的表面。第二气体供给通道相对于基板的中心轴线是对称的。

29. 发明申请

US20110300422A1 LIQUID SODIUM BATTERY 审中-公开
标题翻译：液体钠电池
公开(公告)号：US20110300422A1
公开(公告)日：2011-12-08
申请号：US13202109
申请日：2010-02-15
申请人： Tadahiro Ohmi , Tetsuya Goto , Masafumi Kitano
发明人： Tadahiro Ohmi , Tetsuya Goto , Masafumi Kitano
IPC分类号： H01M10/39
CPC分类号： H01M10/3909 , H01M4/661 , H01M4/664 , H01M10/3945
摘要： A liquid sodium battery in which two electrode members sandwiching a partition wall formed of a Na-ion conducting solid substance are constructed by a metal having a work function whose absolute value is smaller than that of a work function of sodium and a metal having a work function whose absolute value is greater than that of the work function of sodium.
摘要翻译：一种液体钠电池，其中夹有由Na离子导电固体形成的分隔壁的两个电极构件由具有绝对值小于钠功函数和具有工作的金属的功函数的金属构成函数的绝对值大于钠的功函数。

30. 发明申请

US20100275981A1 APPARATUS AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS, AND PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件制造装置及其制造方法，光电转换元件
公开(公告)号：US20100275981A1
公开(公告)日：2010-11-04
申请号：US12809447
申请日：2008-12-12
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kouji Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tetsuya Goto , Kouji Tanaka
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/18 , C23C16/24 , C23C16/511 , H01L31/028 , H01L31/04 , H01L31/0745 , H01L31/1804 , H01L31/1812 , H01L31/1816 , Y02E10/547 , Y02P70/521
摘要： An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.
摘要翻译：一种用于制造光电转换元件的装置和方法以及光电转换元件，该装置和方法能够高效地用微波等离子体形成膜，防止氧气混合，并减少缺陷数量。本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。该装置包括：腔室10，其是容纳基底的封闭空间，其上安装有用于薄膜形成的被检体基底;第一气体供给单元40，其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70，向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50，将微波施加到室10中的微波施加单元20以及偏置电压应用单元60，其根据气体的类型选择并施加衬底偏置电压到衬底W.

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