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21. 发明授权

US07396771B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07396771B2
公开(公告)日：2008-07-08
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

22. 发明申请

US20120256087A1 Scanning Electron Microscope 失效
标题翻译：扫描电子显微镜
公开(公告)号：US20120256087A1
公开(公告)日：2012-10-11
申请号：US13518236
申请日：2010-12-24
申请人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
发明人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
IPC分类号： H01J37/20
CPC分类号： H01L21/6831 , H01J37/20 , H01J2237/2007 , H01J2237/28
摘要： There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.
摘要翻译：提供了能够吸引样品而不使施加到静电卡盘的电压不必要地大的技术。对于静电卡盘的吸引实验，使用已知翘曲度和翘曲方式的试样，以及吸附状态从不良变为良好的临界施加电压来进行。在测定检查对象样品时，测定检查对象样品的平坦度，检测检查对象样品的翘曲程度和翘曲图案。基于检测对象样品的翘曲和翘曲的程度以及已知的关键施加电压，设定静电卡盘的施加电压。

23. 发明授权

US08232522B2 Semiconductor inspecting apparatus 有权
标题翻译：半导体检查装置
公开(公告)号：US08232522B2
公开(公告)日：2012-07-31
申请号：US13000461
申请日：2009-06-23
申请人： Go Miya , Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto
发明人： Go Miya , Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto
IPC分类号： H01J37/20
CPC分类号： H01L22/10 , H01J37/20 , H01J37/265 , H01J37/28 , H01J2237/0044 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.
摘要翻译：在通过半导体检查装置检查具有不同尺寸的样品的情况下，一次电子束弯曲，因为在检查样品附近时样品附近的等电位面上的分布受到干扰，所谓的产生位置偏移。将电位校正电极设置在样品外部和低于样品下表面的位置处，并且施加比样品低的电位。此外，对应于检查位置和样品外端之间的距离，样品厚度和一次电子束的照射条件来控制施加到电位校正电极的电压。

24. 发明申请

US20110303844A1 ELECTRON MICROSCOPE, AND SPECIMEN HOLDING METHOD 有权
标题翻译：电子显微镜和样本保持方法
公开(公告)号：US20110303844A1
公开(公告)日：2011-12-15
申请号：US13202556
申请日：2009-10-15
申请人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
发明人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
IPC分类号： H01J37/20 , H01J37/28
CPC分类号： H01J37/20 , G01R31/307 , H01J37/28 , H01J2237/2007
摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.
摘要翻译：本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加在该样品上的减速电场电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为在发生电位差之后，将负电压施加到接触端子。

25. 发明授权

US07771564B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07771564B2
公开(公告)日：2010-08-10
申请号：US11512081
申请日：2006-08-30
申请人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
发明人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001
摘要： In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to process a sample mounted on the sample mounting plane, the plasma processing apparatus includes: a space arranged inside the sample table, into which a coolant is supplied; a ceiling plane of the space arranged opposite to the sample mounting plane, with which the coolant collides from plural portions; and an exhaust port via which the coolant which has collided with the ceiling plane to be evaporated is exhausted from the sample table.
摘要翻译：在配备有真空容器和样品台的等离子体处理装置中，其设置在真空容器内并具有样品安装面，样品安装在上部，用于在处理室内形成等离子体，以便处理样品安装在样品安装平面上的等离子体处理设备包括：布置在样品台内部的空间，供应冷却剂的空间; 与样品安装平面相对的空间的顶板，冷却剂与多个部分碰撞; 以及与待蒸发的顶板相撞的冷却剂通过该排气口从样品台排出。

26. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

27. 发明申请

US20070035908A1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070035908A1
公开(公告)日：2007-02-15
申请号：US11214861
申请日：2005-08-31
申请人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
发明人： Hiroyuki Kitsunai , Seiichiro Kanno , Tsunehiko Tsubone
IPC分类号： H01T23/00
CPC分类号： H01L21/6833
摘要： In the plasma processing apparatus including a processing chamber for plasma-processing a processed substrate, plasma generating unit that generates plasma in the processing chamber, and a wafer stage which is mounted in the processing chamber and has an electrostatic chuck for holding the processed substrate, a current detector that detects a current value of leakage current flowing in a circuit formed of a power supply for electrostatic attraction, an electrostatic chuck, a substrate, plasma, a grounded line, and a controlling unit which sets an attraction condition to the current value and controls the applied voltage so that the leakage current reaches the set current value are included.
摘要翻译：在包括处理基板等离子体处理用处理室的等离子体处理装置中，在处理室内产生等离子体的等离子体产生装置以及安装在处理室中并具有用于保持被处理基板的静电卡盘的晶圆台，电流检测器，其检测在由静电吸引用电源形成的电路中流动的漏电流的电流值，静电卡盘，基板，等离子体，接地线以及将吸引条件设定为电流值的控制单元并且控制施加的电压，使得漏电流达到设定电流值。

28. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

29. 发明授权

US06583979B1 Electrostatically attracting electrode and a method of manufacture thereof 失效
标题翻译：静电吸引电极及其制造方法
公开(公告)号：US06583979B1
公开(公告)日：2003-06-24
申请号：US09110207
申请日：1998-07-06
申请人： Kazue Takahasi , Youichi Itou , Saburo Kanai , Seiichiro Kanno
发明人： Kazue Takahasi , Youichi Itou , Saburo Kanai , Seiichiro Kanno
IPC分类号： H02N1300
CPC分类号： H01L21/6833
摘要： The present invention allows the electrostatically attracting electrode, whose size corresponds to large diameter wafers, to be fabricated easily and with precision. The first electrode is provided with a recess in which to install the second electrode. An insulating film is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film, which is the polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.
摘要翻译：本发明允许容易且准确地制造其尺寸对应于大直径晶片的静电吸引电极。第一电极设置有用于安装第二电极的凹部。在凹部中形成绝缘膜，然后将第二电极牢固地配合在凹部中。加工组装好的电极使第一和第二电极的表面在同一平面上相互齐平。平面被喷涂的静电吸引膜覆盖，静电吸引膜是抛光的，直到其具有预定厚度。该制造工艺允许静电吸引电极适用于大直径晶片。

30. 发明授权

US08282767B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08282767B2
公开(公告)日：2012-10-09
申请号：US13031839
申请日：2011-02-22
申请人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
发明人： Naoshi Itabashi , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.
摘要翻译：一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理使用等离子体。该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化，并在气体注射板中异常注入。

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