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21. 发明申请

US20130067726A1 LITHIUM SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：锂二次电池及其制造方法
公开(公告)号：US20130067726A1
公开(公告)日：2013-03-21
申请号：US13604675
申请日：2012-09-06
申请人： Kazutaka KURIKI , Nobuhiro Inoue , Kai Kimura
发明人： Kazutaka KURIKI , Nobuhiro Inoue , Kai Kimura
IPC分类号： H01M10/04
CPC分类号： H01M10/052 , H01M10/058 , H01M10/446 , H01M2220/30 , Y02E60/122 , Y02P70/54 , Y10T29/49108
摘要： An object is to improve the cycle performance by improving the reactivity between lithium and a negative electrode active material in the case where an alloy-based material such as silicon is used as the negative electrode active material. A method of manufacturing a lithium secondary battery including a positive electrode including a positive electrode active material into/from which lithium can be inserted/extracted, a negative electrode including a negative electrode active material into/from which lithium can be inserted/extracted, and an electrolyte solution is provided. The method includes the steps of electrochemically inserting lithium into the negative electrode with use of a counter electrode before the lithium secondary battery is assembled, electrochemically extracting part of the lithium inserted into the negative electrode after the insertion, and assembling the lithium secondary after the extraction.
摘要翻译：本发明的目的是通过提高锂和负极活性物质之间的反应性来提高循环性能，在使用诸如硅的合金基材料作为负极活性物质的情况下。一种制造锂二次电池的方法，该锂二次电池包括可以插入/提取锂的正极活性物质的正极，能够插入/提取锂的负极活性物质的负极，以及提供电解质溶液。该方法包括在组装锂二次电池之前使用对电极将锂电化学插入负极的步骤，在插入之后电化学提取插入到负极中的锂的一部分，并在提取后组装锂二次。

22. 发明申请

US20120260478A1 METHOD FOR MANUFACTURING POSITIVE ELECTRODE AND POWER STORAGE DEVICE 有权
标题翻译：用于制造正极和蓄电装置的方法
公开(公告)号：US20120260478A1
公开(公告)日：2012-10-18
申请号：US13435127
申请日：2012-03-30
申请人： Kazutaka KURIKI
发明人： Kazutaka KURIKI
IPC分类号： H01G9/00 , H01M6/00
CPC分类号： H01M4/1391 , H01M4/0421 , H01M4/0471 , H01M4/131 , H01M4/525 , Y10T29/417 , Y10T29/49108
摘要： To suppress decomposition of lithium cobalt oxide and formation of a decomposition product. To suppress the reaction between oxygen in lithium cobalt oxide and a current collector. To obtain a power storage device having high charge and discharge capacity. In a method for manufacturing a power storage device, in forming a lithium cobalt oxide layer over a positive electrode current collector by a sputtering method using a target containing lithium cobalt oxide and a sputtering gas containing Ar, the positive electrode current collector is heated at a temperature at which c-axes of crystals of lithium cobalt oxide are aligned and cobalt oxide is not formed. The heating temperature of the positive electrode current collector is higher than or equal to 400° C. and lower than 600° C.
摘要翻译：抑制钴酸锂的分解和分解产物的形成。抑制钴酸锂中的氧与集电体的反应。以获得具有高充放电能力的蓄电装置。在蓄电装置的制造方法中，通过使用含有钴酸锂的靶和含有Ar的溅射气体的溅射法在正极集电体上形成钴酸锂层，将正极集电体加热至钴酸锂的晶体的c轴取向，没有形成氧化钴的温度。正极集电体的加热温度高于或等于400℃，低于600℃。

23. 发明申请

US20120003530A1 MANUFACTURING METHOD OF POWER STORAGE DEVICE 有权
标题翻译：蓄电装置的制造方法
公开(公告)号：US20120003530A1
公开(公告)日：2012-01-05
申请号：US13164839
申请日：2011-06-21
申请人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
IPC分类号： H01M4/02 , H01L21/02 , H01M4/13 , H01G9/15
CPC分类号： H01L28/84 , H01G11/06 , H01G11/12 , H01G11/28 , H01G11/70 , H01G11/86 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M10/052 , Y02E60/13
摘要： It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.
摘要翻译：其目的在于提高蓄电装置的性能，例如循环特性。蓄电装置包括集电体和包含与集电体紧密接触形成的晶须的晶体半导体层。通过增加粘附力来抑制结晶半导体层的分离，从而实现第十循环数相对于第一循环数的比容量大于或等于90％的循环特性。此外，实现了相对于第一循环次数的第百次循环次数的比容量大于或等于70％的循环特性。

24. 发明申请

US20110305958A1 POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：蓄电装置及其制造方法
公开(公告)号：US20110305958A1
公开(公告)日：2011-12-15
申请号：US13155431
申请日：2011-06-08
申请人： Kazutaka KURIKI
发明人： Kazutaka KURIKI
IPC分类号： H01M10/056 , H01G9/025 , H01G9/15 , H01M10/04
CPC分类号： H01G9/025 , H01G9/15 , H01M4/386 , H01M10/052 , H01M10/056 , H01M10/0562 , H01M10/0565 , H01M12/08 , H01M2300/0068 , H01M2300/0082 , H01M2300/0094 , Y02E60/122 , Y02E60/128 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： An object is to provide a power storage device with improved cycle characteristics and a method of manufacturing the power storage device. Another object is to provide an application mode of the power storage device for which the above power storage device is used. In the method of manufacturing the power storage device, an active material layer is formed over a current collector, a solid electrolyte layer is formed over the active material layer after a natural oxide film over the active material layer is removed, and a liquid electrolyte is provided so as to be in contact with the solid electrolyte layer. Accordingly, decomposition and deterioration of the electrolyte solution which are caused by the contact between the active material layer and the electrolyte solution can be prevented, and cycle characteristics of the power storage device can be improved.
摘要翻译：本发明的目的是提供具有改进的循环特性的蓄电装置和制造蓄电装置的方法。另一个目的是提供使用上述蓄电装置的蓄电装置的应用模式。在蓄电装置的制造方法中，在集电体上形成活性物质层，除去活性物质层上的自然氧化物膜后，在活性物质层上形成固体电解质层，液体电解质为设置成与固体电解质层接触。因此，可以防止由活性物质层与电解液之间的接触引起的电解液的分解和劣化，能够提高蓄电装置的循环特性。

25. 发明申请

US20110294011A1 ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：能源储存装置及其制造方法
公开(公告)号：US20110294011A1
公开(公告)日：2011-12-01
申请号：US13109083
申请日：2011-05-17
申请人： Kazutaka KURIKI , Mikio YUKAWA
发明人： Kazutaka KURIKI , Mikio YUKAWA
IPC分类号： H01M4/58 , B05D5/12 , H01M4/04 , H01G9/00 , H01G9/04
CPC分类号： H01G11/26 , H01G11/30 , H01M4/0428 , H01M4/134 , H01M4/661 , Y02E60/13
摘要： An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion.
摘要翻译：提供了一种放电容量可以较高的能量存储装置和/或能够减少由于重复充放电导致的电极劣化的能量存储装置。提供了包含作为活性物质层的结晶硅层的储能装置的电极。晶体硅层包括晶体硅区域和具有从晶体硅区域向上突出的多个突起的晶须状结晶硅区域。突起包括第一突起和第二突起; 所述第二突起沿着所述轴线具有较大的长度，并且比所述第一突起更尖锐。

26. 发明申请

US20110294005A1 POWER STORAGE DEVICE, ELECTRODE, AND ELECTRIC DEVICE 审中-公开
标题翻译：电力存储装置，电极和电气装置
公开(公告)号：US20110294005A1
公开(公告)日：2011-12-01
申请号：US13102645
申请日：2011-05-06
申请人： Kazutaka KURIKI , Mikio YUKAWA , Hideki MATSUKURA
发明人： Kazutaka KURIKI , Mikio YUKAWA , Hideki MATSUKURA
IPC分类号： H01M4/02
CPC分类号： H01M4/661 , H01M4/0428 , H01M4/134 , H01M4/667 , H01M4/70 , H01M10/0525 , Y02T10/7011
摘要： An object is to improve characteristics of a power storage device by devising the shape of an active material layer. The characteristics of the power storage device can be improved by providing a power storage device including a first electrode, a second electrode, and an electrolyte provided between the first electrode and the second electrode. The second electrode includes an active material layer. The active material layer includes a plurality of projecting portions containing an active material and a plurality of particles containing an active material, which are arranged over the plurality of projecting portions or in a space between the plurality of projecting portions.
摘要翻译：目的是通过设计活性物质层的形状来改善蓄电装置的特性。通过提供包括第一电极，第二电极和设置在第一电极和第二电极之间的电解质的电力存储装置，能够提高蓄电装置的特性。第二电极包括活性物质层。活性物质层包括多个突出部分，其包含活性材料和多个含有活性材料的颗粒，其布置在多个突出部分上或多个突出部分之间的空间中。

27. 发明申请

US20110266654A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电力存储装置及其制造方法
公开(公告)号：US20110266654A1
公开(公告)日：2011-11-03
申请号：US13088592
申请日：2011-04-18
申请人： Kazutaka KURIKI , Mikio YUKAWA , Yuji ASANO
发明人： Kazutaka KURIKI , Mikio YUKAWA , Yuji ASANO
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01M4/386 , C30B25/005 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/06 , H01G11/22 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01G11/68 , H01G11/70 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L28/82 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/382 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0569 , H01M10/0583 , H01M12/08 , H01M2300/0037 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.
摘要翻译：提供一种蓄电装置的制造方法，其中通过低压CVD法在集电体上形成包括晶须状结晶硅区域的结晶硅层作为活性物质层，其中使用沉积物进行加热含硅气体。蓄电装置包括集电体，在集电体上形成的混合层，以及用作在混合层上形成的活性物质层的结晶硅层。晶体硅层包括晶体硅区域和晶须状结晶硅区域，其包括在晶体硅区域上突出的多个突起。利用突起，可以增加用作活性物质层的结晶硅层的表面积。

28. 发明申请

US20100291753A1 SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：半导体衬底，制造半导体衬底的方法，半导体器件和电子器件
公开(公告)号：US20100291753A1
公开(公告)日：2010-11-18
申请号：US12840379
申请日：2010-07-21
申请人： Tetsuya KAKEHATA , Kazutaka KURIKI
发明人： Tetsuya KAKEHATA , Kazutaka KURIKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided.
摘要翻译：通过以下步骤在具有绝缘表面的衬底上形成单晶半导体层：从单晶半导体衬底的表面形成在给定深度处的离子掺杂层; 对所述单晶半导体衬底的表面进行等离子体处理; 在进行等离子体处理的单晶半导体基板上形成绝缘层; 将单晶半导体衬底与绝缘表面的衬底接合在绝缘层之间; 以及使用离子掺杂层作为分离表面分离单晶半导体衬底。结果，可以提供其中单晶半导体层和绝缘层之间的界面的缺陷减小的半导体衬底。

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