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21. 发明授权

US5501936A Positive-working quinonediazide photoresist composition containing a cyclohexyl-substituted triphenylmethane compound 失效
标题翻译：含有环己基取代的三苯基甲烷化合物的正性醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5501936A
公开(公告)日：1996-03-26
申请号：US362857
申请日：1994-12-23
申请人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/022 , G03F7/039 , H01L21/027 , G03F7/023
CPC分类号： G03F7/0226
摘要： An improved positive-working photoresist composition useful in the fine patterning work of a resist layer is proposed which is capable of giving a patterned resist layer having excellent resolution, heat resistance and orthogonality of the cross sectional profile of a line pattern with a high sensitivity to actinic rays and a wide range of the focusing depth. The photoresist composition comprises, as a uniform mixture in the form of a solution, (a) an alkali-soluble novolac resin, (b) a naphthoquinone-1,2-diazido group-containing compound as a photosensitizing ingredient and (c) a specific phenolic triphenyl methane compound substituted by cyclohexyl groups on two of the phenyl groups, such as bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenyl methane or bis(3-cyclohexyl-6-hydroxy-4-methylphenyl)-3,4-dihydroxyphenyl methane, in a specified amount.
摘要翻译：提出了可用于抗蚀剂层的精细图案化工作的改进的正性光致抗蚀剂组合物，其能够提供具有高灵敏度的线图案的横截面轮廓的优异分辨率，耐热性和正交性的图案化抗蚀剂层光化射线和广泛的聚焦深度。光致抗蚀剂组合物包含作为溶液形式的均匀混合物，（a）碱溶性酚醛清漆树脂，（b）含萘醌-1,2-二叠氮基化合物作为光敏成分，（c）在两个苯基上的环己基取代的特异性酚类三苯基甲烷化合物，例如双（3-环己基-4-羟基-6-甲基苯基）-3,4-二羟基苯基甲烷或双（3-环己基-6-羟基 - 4-甲基苯基）-3,4-二羟基苯基甲烷。

22. 发明授权

US06475694B2 Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group 失效
标题翻译：正性光致抗蚀剂组合物，其包含具有酸可分解基团和萘醌二叠氮化物磺酰基基团的酚类化合物
公开(公告)号：US06475694B2
公开(公告)日：2002-11-05
申请号：US09863389
申请日：2001-05-24
申请人： Kousuke Doi , Ken Miyagi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Ken Miyagi , Atsuko Hirata , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/0236 , G03F7/022 , G03F7/0226
摘要： A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.
摘要翻译：正型光致抗蚀剂组合物包括（A）碱性可溶性树脂，其中部分酚羟基被酸可分解基团保护; （B）醌二叠氮酯; 和（C）在365nm波长的光照射下产生酸的化合物。该正性光致抗蚀剂组合物可以在使用i射线（365nm）的光刻工艺中形成约0.35μm的精细图案，在这样的超细区域中的焦深深度范围特性优异，并且具有高灵敏度。

23. 发明授权

US5434031A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive 失效
标题翻译：含有特定羟基化合物添加剂的正性萘醌二叠氮光致抗蚀剂组合物
公开(公告)号：US5434031A
公开(公告)日：1995-07-18
申请号：US153100
申请日：1993-11-17
申请人： Taku Nakao , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Taku Nakao , Remi Numata , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03C1/61 , G03F7/022 , G03F7/023
CPC分类号： G03F7/0226 , G03C1/61
摘要： Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.
摘要翻译：公开了一种适用于制造诸如VLSI的电子设备的光刻精细图案化工作中的正性光致抗蚀剂组合物。除了作为成膜成分的碱溶性酚醛清漆树脂和萘醌-1,2-二叠氮磺酸作为感光成分的酯化产物之外，组合物还包含作为感光成分的独特的添加剂化合物，其为烷基或芳烷基酯 2-羟基苯甲酸，如水杨酸苄酯，或取代至少一个烷基的酚化合物如2-叔丁基-4-甲基苯酚。通过添加这种独特的添加剂，本发明的光致抗蚀剂组合物除了在图案曝光中具有优异的光敏性，分辨能力和聚焦深度以及良好的耐热性外，还表现出优异的抑制驻波效应的性能图案化的抗蚀剂层。

24. 发明授权

US5401605A Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound 失效
标题翻译：含有三苯甲烷化合物的1,2-萘醌二叠氮化物酯化产物的正性感光性树脂组合物
公开(公告)号：US5401605A
公开(公告)日：1995-03-28
申请号：US282772
申请日：1994-07-29
申请人： Kousuke Doi , Hiroshi Hosoda , Kouichi Takahashi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kousuke Doi , Hiroshi Hosoda , Kouichi Takahashi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/023
CPC分类号： G03F7/022
摘要： Proposed is a positive-working photosensitive resin composition suitable as a photoresist in the photolithographic patterning work for the manufacture of, for example, semiconductor devices having excellent storage stability and capable of giving a patterned resist layer having excellent contrast of the images, orthogonality of the cross sectional profile of line patterns and heat resistance along with a satisfactorily high photosensitivity and large focusing latitude. The composition comprises, in admixture with an alkali-soluble novolac resin as a film-forming agent, a photosensitizing agent which is an esterification product of a specific tris(hydroxyphenyl) methane compound of which two of the hydroxyphenyl groups each have a cyclohexyl group bonded thereto at a specified position with at least one naphthoquinone-1,2-diazide sulfonyl group as the esterifying group.
摘要翻译：提出了在光刻图案工作中适合作为光致抗蚀剂的正性感光性树脂组合物，用于制造例如具有优异的储存稳定性的半导体器件，并且能够给出具有优异的图像对比度的图案化抗蚀剂层，线图形的横截面轮廓和耐热性以及令人满意的高光敏性和大的聚焦纬度。该组合物与作为成膜剂的碱溶性酚醛清漆树脂的混合物包含作为其中两个羟基苯基各自具有环己基基团的特定三（羟基苯基）甲烷化合物的酯化产物的光敏剂在指定位置与至少一个萘醌-1,2-二叠氮基磺酰基作为酯化基。

25. 发明授权

US5601961A High-sensitivity positive-working photoresist composition 失效
标题翻译：高灵敏度正性光刻胶组合物
公开(公告)号：US5601961A
公开(公告)日：1997-02-11
申请号：US412889
申请日：1995-03-29
申请人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Kazuhiko Nakayama , Taku Nakao , Kousuke Doi , Nobuo Tokutake , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , C08G8/08 , G03F7/023 , H01L21/027
CPC分类号： C08G8/08 , G03F7/0236
摘要： Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin. Namely, the phenolic mixture for the novolac (a) consists of m- and p-cresols, the phenolic mixture for the novolac (b1) consists of m-cresol and a xylenol, the phenolic mixture for the novolac (b2) consists of m- and p-cresols and a xylenol, the phenolic mixture for the novolac (c1) consists of m-cresol and a trimethyl phenol and the phenolic mixture for the novolac (c2) consists of m- and p-cresols and a trimethyl phenol each in a specified molar proportion of the constituent phenolic compounds.
摘要翻译：公开了一种改进的正性光致抗蚀剂组合物，其包含作为成膜剂的碱溶性树脂和含醌二叠氮基的化合物作为感光剂。本发明组合物最具特色的特征在于碱溶性树脂的独特配方，其是选自酚醛清漆树脂（a），（b1）或（b2）和（c1）中的两种或三种酚醛清漆树脂的组合，或（c2），其各自的特征在于酚类化合物作为与醛化合物进行缩合反应以形成酚醛清漆树脂的混合物的独特配方。即，酚醛清漆（a）的酚类混合物由间甲酚和对甲酚组成，酚醛清漆（b1）的酚类混合物由间甲酚和二甲苯酚组成，酚醛清漆（b2）的酚类混合物由 - 酚甲酚和二甲苯酚，酚醛清漆（c1）的酚类混合物由间甲酚和三甲酚组成，酚醛清漆（c2）的酚类混合物由间甲苯酚和对甲酚和三甲酚组成以规定摩尔比例的组成酚类化合物。

26. 发明授权

US06620978B2 Positive photoresist composition and process for synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和合成多酚化合物的方法
公开(公告)号：US06620978B2
公开(公告)日：2003-09-16
申请号：US10207840
申请日：2002-07-31
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： C07C3912
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

27. 发明授权

US5332647A Positive-working quinone diazide composition containing N,N',N"-substituted isocyanurate compound and associated article 失效
标题翻译：含N，N'，N“ - 取代的异氰脲酸酯化合物和相关制品的正性醌醌二叠氮化合物组合物
公开(公告)号：US5332647A
公开(公告)日：1994-07-26
申请号：US111179
申请日：1993-08-24
申请人： Hayato Ohno , Nobuo Tokutake , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hayato Ohno , Nobuo Tokutake , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/09 , G03C1/61 , G03F7/023
CPC分类号： G03F7/0226
摘要： A positive-working photosensitive resin composition useful as a photoresist material in the fine patterning work for the manufacture of semiconductor devices is proposed. The composition is excellent in the storage stability and capable of giving a patterned resist layer having good film thickness retention, cross sectional profile of line patterns, resolution and heat resistance. The composition comprises, in addition to a conventional alkali-soluble novolac resin as a film-forming agent and a quinone diazide group containing compound as a photosensitizing agent, a specific isocyanurate compound substituted at each nitrogen atom with a hydroxy- and ter-butyl-substituted benzyl group.
摘要翻译：提出了用于制造半导体器件的精细图案化工作中用作光致抗蚀剂材料的正性感光性树脂组合物。该组合物的保存稳定性优异，能够得到具有良好的膜厚保持性，线图案的横截面轮廓，分辨率和耐热性的图案化抗蚀剂层。该组合物除了常规的作为成膜剂的碱溶性酚醛清漆树脂和含有醌二叠氮基的化合物作为感光剂之外，还包括在每个氮原子处被羟基和叔丁基取代的异氰脲酸酯化合物，取代的苄基。

28. 发明授权

US06492085B1 Positive photoresist composition and process and synthesizing polyphenol compound 失效
标题翻译：正光致抗蚀剂组合物和工艺合成多酚化合物
公开(公告)号：US06492085B1
公开(公告)日：2002-12-10
申请号：US09635404
申请日：2000-08-10
申请人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Shimatani , Ken Miyagi , Satoshi Niikura , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7023
CPC分类号： G03F7/022
摘要： The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis[4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl]-4-methylphenol, where the average degree of esterification of 20% to 80%.
摘要翻译：本发明提供了包含（A）碱溶性树脂和（B）光敏剂的正性光致抗蚀剂组合物，成分（B）是例如2,6-双[4-羟基-3 - （2-羟基-3,5-二甲基苄基）-2,5-二甲基苄基] -4-甲基苯酚，其中平均酯化度为20％至80％。

29. 发明授权

US5728504A Positive photoresist compositions and multilayer resist materials using the same 失效
标题翻译：正型光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5728504A
公开(公告)日：1998-03-17
申请号：US652389
申请日：1996-05-23
申请人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Hiroshi Hosoda , Satoshi Niikura , Atsushi Sawano , Tatsuya Hashiguchi , Kazuyuki Nitta , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/11 , G03F7/022 , G03F7/26 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： A positive photoresist composition comprising (A) an alkali-soluble resin and (B) a light-sensitive component comprising at least one compound represented by the following general formula (I): ##STR1## where R.sup.1, R.sup.2 and R.sup.3 are each independently a hydrogen atom, an alkyl group having 1-3 carbon atoms or an alkoxy group having 1-3 carbon atoms; R.sup.4 is a hydrogen atom or an alkyl group having 1-3 carbon atoms; a, b and c are an integer of 1-3; l, m and n are an integer of 1-3, in which at least part of the hydroxyl groups present are esterified with a quinonediazidosulfonic acid and a sulfonic acid which has a group represented by the following formula (II): --SO.sub.2 --R.sup.5 (II) where R.sup.5 is a substituted or unsubstituted alkyl group, an alkenyl group or a substituted or unsubstituted aryl group, thereby forming a mixed ester, and a multilayer resist material in which a positive photoresist layer formed of said positive photoresist composition is provided on an anti-reflective coating over a substrate are capable of forming high-resolution resist patterns with good cross-sectional profiles and permit a wider margin of exposure and better depth-of-focus characteristics.
摘要翻译：一种正性光致抗蚀剂组合物，其包含（A）碱溶性树脂和（B）包含至少一种由以下通式（I）表示的化合物的光敏性组分：其中R 1，R 2和R 3是各自独立地为氢原子，具有1-3个碳原子的烷基或具有1-3个碳原子的烷氧基; R4是氢原子或具有1-3个碳原子的烷基; a，b和c为1-3的整数; l，m和n是1-3的整数，其中存在的羟基的至少一部分与醌二叠氮磺酸和具有下式（II）表示的基团的磺酸酯化：-SO 2 -R 5 （II）其中R5是取代或未取代的烷基，烯基或取代或未取代的芳基，从而形成混合酯，以及多层抗蚀剂材料，其中由所述正性光致抗蚀剂组合物形成的正性光致抗蚀剂层设置在衬底上的抗反射涂层能够形成具有良好横截面轮廓的高分辨率抗蚀剂图案，并允许更宽的曝光余量和更好的聚焦深度特性。

30. 发明授权

US5518860A Positive-working quinonediazide photoresist composition containing hydroxyalkyl substituted pyridine compound 失效
标题翻译：含有羟基烷基取代的吡啶化合物的正性醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5518860A
公开(公告)日：1996-05-21
申请号：US463887
申请日：1995-06-05
申请人： Satoshi Niikura , Jun Koshiyama , Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
发明人： Satoshi Niikura , Jun Koshiyama , Tetsuya Kato , Kouichi Takahashi , Hidekatsu Kohara , Toshimasa Nakayama
IPC分类号： G03F7/022 , G03F7/085 , H01L21/027 , G03F7/023 , G03C1/61
CPC分类号： G03F7/0226
摘要： A positive-working photoresist composition comprising a cresol novolac resin as the film-forming agent and a quinonediazido group-containing compound as the photosensitizing agent is admixed with a limited amount of a hydroxyalkyl-substituted pyridine compound so that great improvements can be obtained in the adhesive bonding of the resist layer to the substrate surface and in the stability of the composition by storage still without the problem due to the sublimed material from the resist layer during the patterning process.
摘要翻译：将包含作为成膜剂的甲酚酚醛清漆树脂和含有醌二叠氮基的化合物作为光敏剂的正性光致抗蚀剂组合物与有限量的羟烷基取代的吡啶化合物混合，从而可以在通过存储，抗蚀剂层与基材表面的粘合粘合和组合物的稳定性，在图案化工艺期间由于来自抗蚀剂层的升华材料而没有问题。

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