专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US09954006B2 Thin film transistor array substrate and method of manufacturing the same 有权
公开(公告)号：US09954006B2
公开(公告)日：2018-04-24
申请号：US15332079
申请日：2016-10-24
申请人： Samsung Display Co., Ltd.
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L29/10 , H01L27/12 , H01L29/51 , H01L29/786 , H01L29/45 , H01L23/532 , H01L29/49 , H01L29/66 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

22. 发明授权

US09647136B2 Thin film transistor, thin film transistor panel, and method for manufacturing the same 有权
公开(公告)号：US09647136B2
公开(公告)日：2017-05-09
申请号：US14743387
申请日：2015-06-18
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Hyun-Jung Lee , Sung-Haeng Cho , Woo-Geun Lee , Jang-Hoon Ha , Hee-Jun Byeon , Ji-Yun Hong , Ji-Soo Oh
IPC分类号： H01L29/786 , H01L27/15 , H01L33/08 , H01L27/12 , H01L29/417
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

23. 发明授权

US09520412B2 Thin film transistor panel having an etch stopper on semiconductor 有权
公开(公告)号：US09520412B2
公开(公告)日：2016-12-13
申请号：US14798123
申请日：2015-07-13
申请人： Samsung Display Co., Ltd.
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L21/00 , H01L21/84 , H01L27/12 , H01L21/4757 , H01L21/441 , H01L21/475 , H01L29/786 , H01L29/66
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

24. 发明授权

US09418861B2 Method of manufacturing a display substrate using two etch masks 有权
标题翻译：使用两个蚀刻掩模制造显示器基板的方法
公开(公告)号：US09418861B2
公开(公告)日：2016-08-16
申请号：US14455771
申请日：2014-08-08
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seung-Ha Choi , Kyoung-Jae Chung , Woo-Geun Lee
IPC分类号： H01L21/308 , H01L27/12 , H01L29/49 , H01L29/66 , H01L29/786 , G02F1/1362
CPC分类号： H01L21/3086 , G02F1/136227 , H01L27/1225 , H01L27/1288 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.
摘要翻译：提供了显示基板，显示装置和制造显示基板的方法。显示基板包括：限定像素区域的基板; 在基板上形成栅电极和栅极焊盘; 形成在栅极电极和栅极焊盘上的栅极绝缘层; 缓冲层图案与栅电极重叠并形成在栅极绝缘层上; 形成在缓冲层图案上的绝缘膜图案; 形成在所述绝缘膜图案上的氧化物半导体图案; 形成在所述氧化物半导体图案上的源电极; 以及形成在氧化物半导体图案上并与源电极分离的漏电极。

25. 发明授权

US08975145B2 Method for manufacturing a display panel 有权
标题翻译：显示面板的制造方法
公开(公告)号：US08975145B2
公开(公告)日：2015-03-10
申请号：US14168971
申请日：2014-01-30
申请人： Samsung Display Co., Ltd.
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L33/44 , H01L27/12 , H01L29/66
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

26. 发明申请

US20140093998A1 THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF 有权
标题翻译：薄膜晶体管面板及其制作方法
公开(公告)号：US20140093998A1
公开(公告)日：2014-04-03
申请号：US14094001
申请日：2013-12-02
申请人： Samsung Display Co., Ltd.
发明人： Hye-Young Ryu , Jin-Won Lee , Woo-Geun Lee , Hee-Jun Byeon , Xun Zhu
IPC分类号： H01L27/12
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L27/1248 , H01L27/3272 , H01L51/5253 , H01L2227/323
摘要： A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.
摘要翻译：薄膜晶体管面板包括基板，基板上的阻光层，遮光层上的第一保护膜，第一保护膜上的第一电极和第二电极，第一保护膜的一部分上的氧化物半导体层在第一电极和第二电极之间暴露的保护膜，绝缘层，与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。遮光层包括第一侧壁，并且第一保护膜包括第二侧壁。第一和第二侧壁沿着基本相同的线设置。

27. 发明申请

US20130234124A1 THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管基板，其制造方法和包括其的显示装置
公开(公告)号：US20130234124A1
公开(公告)日：2013-09-12
申请号：US13871368
申请日：2013-04-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： KAP-SOO YOON , Woo-Geun Lee , Bong-Kyun Kim , Sung-Hoon Yang , Ki-Won Kim , Hyun-Jung Lee
IPC分类号： H01L29/786 , H01L51/52
CPC分类号： H01L29/78693 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L51/5203
摘要： Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
摘要翻译：提供了一种薄膜晶体管（TFT）基板，其制造方法和包括该薄膜晶体管的显示装置。 TFT基板包括形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上的氧化物半导体图案，形成在氧化物半导体图案上的源电极，形成在氧化物上的漏电极面对源电极的半导体图案，以及形成在栅极绝缘层上的像素电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式