专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20110147763A1 GROUP III NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE AND PRODUCTION METHOD THEREOF 有权
标题翻译：第III类氮化物半导体多层结构及其制备方法
公开(公告)号：US20110147763A1
公开(公告)日：2011-06-23
申请号：US13057696
申请日：2009-07-30
申请人： Kenzo Hanawa , Yasumasa Sasaki
发明人： Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L33/32
CPC分类号： H01L21/0262 , B82Y20/00 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/325 , H01S5/0213 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.
摘要翻译：根据本发明，具有高结晶度的AlN晶体膜晶种层与选择性/横向生长结合，从而可以获得结晶度更高的III族氮化物半导体多层结构。本发明的III族氮化物半导体多层结构体是III型氮化物半导体多层结构体，其中，在C面蓝宝石衬底表面上形成晶面间距为200nm以上的AlN结晶膜作为晶种层，溅射方法和下层，分别由III族氮化物半导体构成的n型半导体层，发光层和p型半导体层进一步层叠，其中存在种子层的区域并且不存在形成在C面蓝宝石衬底表面上和/或能够外延生长和不能外延生长的区域形成在下层中。

22. 发明申请

US20110084307A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20110084307A1
公开(公告)日：2011-04-14
申请号：US12996329
申请日：2009-06-03
申请人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
发明人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L21/02458 , C23C14/022 , C23C14/0617 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02658 , H01L33/007 , H01L33/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x
摘要翻译：本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层（15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

23. 发明申请

US20090146161A1 GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE 有权
标题翻译： III类氮化物半导体堆叠结构
公开(公告)号：US20090146161A1
公开(公告)日：2009-06-11
申请号：US12300306
申请日：2007-05-08
申请人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
发明人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
IPC分类号： H01L29/205 , H01L21/20 , H01L33/00
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

24. 发明授权

US5885369A Solder powder, method for making the solder powder and solder paste using the solder powder 失效
标题翻译：焊剂粉末，焊料粉末的制造方法和使用焊料粉末的焊膏
公开(公告)号：US5885369A
公开(公告)日：1999-03-23
申请号：US911674
申请日：1997-08-15
申请人： Kenzo Hanawa , Takayuki Araki , Yoshinobu Okamura , Yasuhiro Asano
发明人： Kenzo Hanawa , Takayuki Araki , Yoshinobu Okamura , Yasuhiro Asano
IPC分类号： B23K35/22 , B22F1/02 , B23K35/02 , B23K35/14 , B23K35/26 , B23K35/36 , B23K35/363 , B23K35/40 , C07C55/14 , H05K3/34
CPC分类号： B23K35/0244 , B23K35/3618 , B23K35/262 , B23K35/3613 , H05K3/3484 , Y10T428/2991
摘要： According to the present invention, the oxidation of the surface of solder particles is inhibited and the generation of solder balls in the reflow soldering process is inhibited. More specifically, the present invention protects the surface of the solder particles from oxidation during all steps, including the storage of a solder powder, formation of a paste from the solder powder, printing, transferring to a reflow oven and reflow soldering, to minimize the oxidation of the solder particles at these steps so that the generation of solder balls is minimized. In addition, the present invention provides a method for making the solder powder and a solder paste using the solder powder. The objective of the present invention is achieved by the solder powder, the particles of which have on the surface thereof an organometallic compound composed of adipic acid and a metal of the solder alloy. This solder powder is produced by reacting particles of the solder alloy powder with vaporized adipic acid. According to the present invention, the solder powder, the particles of which have on the surface thereof an adipic acid-derived organometallic compound combined chemically with the surface of the solder particles, is blended with a flux to be made into a paste.
摘要翻译：根据本发明，焊料颗粒表面的氧化被抑制，并且在回流焊接过程中产生焊球被抑制。更具体地说，本发明在所有步骤中保护焊料颗粒的表面免于氧化，包括焊料粉末的存储，焊料粉末的形成，印刷，转移到回流炉和回流焊接，以最小化在这些步骤中焊料颗粒的氧化使得焊球的产生最小化。此外，本发明提供了使用焊料粉末制造焊料粉末和焊膏的方法。本发明的目的是通过在其表面上具有由己二酸和焊料合金的金属组成的有机金属化合物的焊料粉末来实现的。这种焊料粉末是通过将焊料合金粉末的颗粒与汽化的己二酸反应制备的。根据本发明，其表面上具有与焊料颗粒的表面化学结合的己二酸衍生的有机金属化合物的焊料粉末与要制成糊料的助熔剂共混。

25. 发明授权

US5358660A Magnetic particles for perpendicular magnetic recording 失效
标题翻译：用于垂直磁记录的磁性颗粒
公开(公告)号：US5358660A
公开(公告)日：1994-10-25
申请号：US915294
申请日：1992-07-20
申请人： Takanori Kidoh , Katsura Ito , Kenzo Hanawa
发明人： Takanori Kidoh , Katsura Ito , Kenzo Hanawa
IPC分类号： C04B35/26 , G11B5/706
CPC分类号： G11B5/70678 , C04B35/265
摘要： Magnetic particles for perpendicular magnetic recording, which are hexagonal ferrite particles having a hexagonal platelet shape, and are represented by the formula MM'.sub.x M".sub.y Fe.sub.2x-y+2z O.sub.1+4x+3z (wherein M represents at least one element or a combination of elements selected from Ba, Sr, Ca and Pb; M' is at least one element or a combination of elements selected from Co, Zn and Mn; M" is at least one element or a combination of elements selected from Co, Ti, In, Zn, Mn, Ge, Nb, Zr, Ta, V and Sn, x is a number of z/4 to z, inclusive; y is a number of 0 to (x+z)/3, inclusive; and z is a number of 5.5 to 9.0, inclusive), and has an average particle size of from 0.01 to 0.3 .mu.m. The magnetic particles have a novel crystal structure different from both the magnetoplumbite structure and the spinel structure, even internally of the individual particles.
摘要翻译：用于垂直磁记录的磁性颗粒是六方晶系的六方晶系的粒子形状，由式MM'xM''yFe2x-y + 2zO1 + 4x + 3z表示（其中M表示至少一种元素或选自Ba，Sr，Ca和Pb的元素; M'是选自Co，Zn和Mn中的至少一种元素或元素的组合; M“是至少一种元素或选自Co，Ti， In，Zn，Mn，Ge，Nb，Zr，Ta，V和Sn中的x是z / 4〜z的数量，y是0〜（x + z）/ 3的数，是5.5〜9.0的数值），平均粒径为0.01〜0.3μm。磁性颗粒具有与磁铅笔结构和尖晶石结构不同的新型晶体结构，甚至在单个颗粒的内部。

26. 发明授权

US08802187B2 Solar cell and process for producing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08802187B2
公开(公告)日：2014-08-12
申请号：US12820892
申请日：2010-06-22
申请人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
发明人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
IPC分类号： H01L21/203 , H01L51/00
CPC分类号： H01L51/0008 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L31/022425 , H01L31/0687 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
摘要翻译：本发明提供一种太阳能电池的制造方法，其特征在于，使用溅射法在基板上形成由III族氮化物半导体构成的缓冲层，在所述缓冲层上形成III族氮化物半导体层和电极。 III族氮化物半导体层通过选自溅射法，MOCVD法，MBE法，CBE法和MLE法中的至少一种形成在缓冲层上，电极形成在 III族氮化物半导体层。

27. 发明授权

US08378369B2 Light emitting unit, light emitting module, and display device 有权
标题翻译：发光单元，发光模块和显示装置
公开(公告)号：US08378369B2
公开(公告)日：2013-02-19
申请号：US13062152
申请日：2009-09-01
申请人： Kenzo Hanawa , Takaharu Hoshina , Tomoyuki Takei
发明人： Kenzo Hanawa , Takaharu Hoshina , Tomoyuki Takei
IPC分类号： H01L33/00 , F21V1/00
CPC分类号： H01L33/46 , G02F1/133603 , H01L33/44 , H01L33/50 , H01L33/54 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting unit (60) is provided with a resin container (61) in which a recessed portion (61a) is formed, an anode lead portion (62) and a cathode lead portion (63) which are provided so as to be exposed on the bottom surface of the recessed portion (61a), a semiconductor light emitting element (64) attached to the cathode lead portion (63) on the bottom surface (70) of the recessed portion (61a), and a sealing resin (65) provided so as to cover the recessed portion (61a). The resin container (61) is produced from a white resin containing titania as a coloring agent. The anode lead portion (62) and the cathode lead portion (63) are each configured by forming a silver-plated layer with the gloss level set in the range of 0.3-1.0 inclusive on a metal plate based on a copper alloy or the like. Thus, the efficiency of extraction of light outputted from the light emitting unit is improved.
摘要翻译：发光单元（60）设置有形成有凹部（61a）的树脂容器（61），阳极引出部（62）和阴极引出部（63），被设置为露出在凹部（61a）的底面上，在凹部（61a）的底面（70）上安装在阴极引出部（63）上的半导体发光元件（64）和密封树脂）设置成覆盖凹部（61a）。树脂容器（61）由含有二氧化钛作为着色剂的白色树脂制成。阳极引线部分（62）和阴极引线部分（63）各自通过在基于铜合金等的金属板上形成光泽度设定在0.3-1.0范围内的镀银层。因此，提高了从发光单元输出的光的提取效率。

28. 发明授权

US08227284B2 Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp 有权
标题翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯
公开(公告)号：US08227284B2
公开(公告)日：2012-07-24
申请号：US12373655
申请日：2007-08-15
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , C23C14/0036 , C23C14/0641 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
摘要翻译：本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。一种III族氮化物半导体发光元件的制造方法，其特征在于，在基板11上，使用溅射法，将包含Ga作为III族元素的III族氮化物半导体化合物半导体层形成为半导体层。基板11和溅射靶被配置成彼此面对，并且基板11和溅射靶之间的间隙在20〜100mm的范围内。此外，当通过溅射法形成半导体层时，向基板11施加大于0.1W / cm 2的偏压。此外，当形成半导体层时，将氮和氩供应到用于溅射的室中。

29. 发明授权

US08148712B2 Group III nitride compound semiconductor stacked structure 有权
标题翻译： III族氮化物化合物半导体层叠结构
公开(公告)号：US08148712B2
公开(公告)日：2012-04-03
申请号：US12300306
申请日：2007-05-08
申请人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
发明人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
IPC分类号： H01L29/06
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

30. 发明申请

US20120044667A1 LIGHT EMITTING UNIT, LIGHT EMITTING MODULE, AND DISPLAY DEVICE 有权
标题翻译：发光单元，发光模块和显示装置
公开(公告)号：US20120044667A1
公开(公告)日：2012-02-23
申请号：US13062152
申请日：2009-09-01
申请人： Kenzo Hanawa , Takaharu Hoshina , Tomoyuki Takei
发明人： Kenzo Hanawa , Takaharu Hoshina , Tomoyuki Takei
IPC分类号： G09F13/04 , H01J1/70
CPC分类号： H01L33/46 , G02F1/133603 , H01L33/44 , H01L33/50 , H01L33/54 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting unit (60) is provided with a resin container (61) in which a recessed portion (61a) is formed, an anode lead portion (62) and a cathode lead portion (63) which are provided so as to be exposed on the bottom surface of the recessed portion (61a), a semiconductor light emitting element (64) attached to the cathode lead portion (63) on the bottom surface (70) of the recessed portion (61a), and a sealing resin (65) provided so as to cover the recessed portion (61a). The resin container (61) is produced from a white resin containing titania as a coloring agent. The anode lead portion (62) and the cathode lead portion (63) are each configured by forming a silver-plated layer with the gloss level set in the range of 0.3-1.0 inclusive on a metal plate based on a copper alloy or the like. Thus, the efficiency of extraction of light outputted from the light emitting unit is improved.
摘要翻译：发光单元（60）设置有形成有凹部（61a）的树脂容器（61），阳极引出部（62）和阴极引出部（63），被设置为露出在凹部（61a）的底面上，在凹部（61a）的底面（70）上安装在阴极引出部（63）上的半导体发光元件（64）和密封树脂）设置成覆盖凹部（61a）。树脂容器（61）由含有二氧化钛作为着色剂的白色树脂制成。阳极引线部分（62）和阴极引线部分（63）各自通过在基于铜合金等的金属板上形成光泽度设定在0.3-1.0范围内的镀银层。因此，提高了从发光单元输出的光的提取效率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式