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21. 发明授权

US07660082B2 TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions 有权
标题翻译：具有隧道势垒的TMR元件包括结晶部分和非结晶部分
公开(公告)号：US07660082B2
公开(公告)日：2010-02-09
申请号：US11500379
申请日：2006-08-08
申请人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
发明人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
IPC分类号： G11B5/39 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.
摘要翻译：磁阻元件具有下层，隧道势垒层和上层。下层，隧道势垒层和上层相邻配置并依次层叠。下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

22. 发明授权

US07652854B2 Magneto-resistive or tunneling magneto-resistive element having a shielding film of an amorphous layer above a crystalline layer, and method for manufacturing the same 有权
标题翻译：具有在结晶层上方的非晶层的屏蔽膜的磁阻或隧道式磁阻元件及其制造方法
公开(公告)号：US07652854B2
公开(公告)日：2010-01-26
申请号：US11500311
申请日：2006-08-08
申请人： Takeo Kagami , Naoki Ohta , Kazuki Sato , Satoshi Miura
发明人： Takeo Kagami , Naoki Ohta , Kazuki Sato , Satoshi Miura
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/112 , G11B5/3912 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49044
摘要： A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.
摘要翻译：隧道磁阻元件包括：包括反铁磁层，钉扎层，阻挡层和自由层的隧道磁阻膜; 以及相对于层叠方向设置在隧道磁阻膜下方的下磁屏蔽膜。阻挡层由氧化镁构成。下磁屏蔽膜具有多层结构，其包括结晶层和相对于层叠方向设置在结晶层上方的非晶层。结晶层含有至少一种晶粒尺寸为500nm以上的晶粒。

23. 发明申请

US20080218915A1 Tunnel Magnetoresistive Effect Element With Lower Noise and Thin-Film Magnet Head Having the Element 审中-公开
标题翻译：隧道磁阻效应元件与低噪声和薄膜磁头头元素
公开(公告)号：US20080218915A1
公开(公告)日：2008-09-11
申请号：US11681937
申请日：2007-03-05
申请人： Takumi Uesugi , Satoshi Miura , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
发明人： Takumi Uesugi , Satoshi Miura , Tetsuro Sasaki , Takeo Kagami , Kei Hirata
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906
摘要： Provided is a TMR effect element having no special structures needing much man-hour cost for the formation, in which the high temperature noise and the low temperature noise are suppressed and a sufficiently high resistance-change ratio is provided. The TMR effect element comprises: a tunnel barrier layer formed by oxidizing a base film; and two ferromagnetic layers stacked so as to sandwich the tunnel barrier layer, the base film having a film thickness larger than a film thickness at which a resistance-change ratio of the TMR effect element indicates a maximum value. Here, in the case that the base film is an aluminum film, the film thickness of the aluminum film is preferably in the range of 0.50 nm to 1.5 nm.
摘要翻译：本发明提供一种TMR效应元件，其特征在于，在抑制高温噪声和低温噪声以及提供足够高的电阻变化率的情况下，不需要大量的人工成本。 TMR效应元件包括：通过氧化基膜形成的隧道势垒层; 以及层叠所述隧道势垒层的两个铁磁层，所述基膜的膜厚度大于所述TMR效应元件的电阻变化率为最大值的膜厚度。这里，在基膜是铝膜的情况下，铝膜的膜厚优选在0.50nm〜1.5nm的范围内。

24. 发明申请

US20080218912A1 CPP-type magnetoresistive element having spacer layer that includes semiconductor layer 审中-公开
标题翻译： CPP型磁阻元件具有包括半导体层的间隔层
公开(公告)号：US20080218912A1
公开(公告)日：2008-09-11
申请号：US11715984
申请日：2007-03-09
申请人： Kei Hirata , Satoshi Miura , Takeo Kagami , Tetsuro Sasaki
发明人： Kei Hirata , Satoshi Miura , Takeo Kagami , Tetsuro Sasaki
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes: a free layer whose direction of magnetization changes in response to a signal magnetic field; a pinned layer whose direction of magnetization is fixed; and a spacer layer disposed between these layers. The spacer layer includes: a semiconductor layer made of an n-type semiconductor; and a Schottky barrier forming layer made of a metal material having a work function higher than that of the n-type semiconductor that the semiconductor layer is made of, the Schottky barrier forming layer being disposed in at least one of a position between the semiconductor layer and the free layer and a position between the semiconductor layer and the pinned layer, touching the semiconductor layer and forming a Schottky barrier at an interface between the semiconductor layer and itself The semiconductor layer is 1.1 to 1.7 nm in thickness, and the Schottky barrier forming layer is 0.1 to 0.3 nm in thickness.
摘要翻译： MR元件包括：其磁化方向响应于信号磁场而变化的自由层; 固定磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括：由n型半导体制成的半导体层; 以及肖特基势垒形成层，其由具有比半导体层形成的n型半导体的功函数高的金属材料制成，所述肖特基势垒形成层设置在所述半导体层之间的位置中的至少一个自由层和半导体层与被钉扎层之间的位置，与半导体层接触并在半导体层与其自身之间的界面处形成肖特基势垒。半导体层的厚度为1.1〜1.7nm，形成肖特基势垒层的厚度为0.1〜0.3nm。

25. 发明申请

US20070053114A1 TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions 有权
标题翻译：具有隧道势垒的TMR元件包括结晶部分和非结晶部分
公开(公告)号：US20070053114A1
公开(公告)日：2007-03-08
申请号：US11500379
申请日：2006-08-08
申请人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
发明人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.
摘要翻译：磁阻元件具有下层，隧道势垒层和上层。下层，隧道势垒层和上层相邻配置并依次层叠。下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

26. 发明申请

US20070014053A1 Magnetic field detecting element having a tunnel barrier formed on an amorphous layer 有权
标题翻译：具有在非晶层上形成的隧道势垒的磁场检测元件
公开(公告)号：US20070014053A1
公开(公告)日：2007-01-18
申请号：US11476724
申请日：2006-06-29
申请人： Takumi Uesugi , Satoshi Miura
发明人： Takumi Uesugi , Satoshi Miura
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , G01R33/06 , G11B5/3903 , H01F10/132 , H01F10/3204 , H01F10/3254 , H01F10/3281 , H01L43/08
摘要： A magnetic field detecting element has a lower layer, a tunnel barrier layer, and an upper layer, wherein the lower layer, the tunnel barrier layer, and the upper layer are stacked adjacent to each other in this order, wherein a magnetization direction of either the lower layer or the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other can be changed in accordance with the external magnetic field such that a magnitude of the external magnetic field is detected based on a change in resistance relative to a sense current, the change in resistance depending on the external magnetic field, wherein the lower layer comprises: a first layer that is formed in an amorphous state; and a second layer that is made of cobalt, iron, nickel or a combination thereof and that is formed in a substantially amorphous state, the second layer being adjacent to the first layer and the tunnel barrier layer on both sides.
摘要翻译：磁场检测元件具有下层，隧道势垒层和上层，其中下层，隧道势垒层和上层依次堆叠在一起，其中两者之一的磁化方向下层或上层相对于外部磁场固定，并且可以根据外部磁场改变另一个的磁化方向，使得基于电阻的变化来检测外部磁场的大小相对于感测电流，根据外部磁场的电阻变化，其中所述下层包括：形成为非晶态的第一层; 以及由钴，铁，镍或其组合制成的第二层，其形成为基本非晶态，所述第二层与所述第一层相邻，并且所述隧道势垒层位于两侧。

27. 发明申请

US20050195333A1 Image signal processing apparatus and method 失效
标题翻译：图像信号处理装置及方法
公开(公告)号：US20050195333A1
公开(公告)日：2005-09-08
申请号：US10512517
申请日：2004-02-27
申请人： Satoshi Miura
发明人： Satoshi Miura
IPC分类号： H04N5/14 , H04N5/57 , H04N5/52
CPC分类号： H04N5/57 , H04N21/4318
摘要： In a conventional contrast adjustment circuit, since an entire signal level of a luminance signal is shifted, peak luminance is lowered, and luminance deterioration is undesirably raised. In the present invention, a direct-current component of a luminance signal is shifted according to need, and a predetermined expansion processing to increase a signal level of highlight portion is performed for a luminance signal having its direct-current component shifted.
摘要翻译：在常规的对比度调整电路中，由于亮度信号的整个信号电平偏移，所以峰值亮度降低，并且亮度劣化不期望地提高。在本发明中，根据需要偏移亮度信号的直流分量，对其直流分量偏移的亮度信号进行用于增加高光部分的信号电平的预定的扩展处理。

28. 发明授权

US5339011A Display device 失效
标题翻译：显示设备
公开(公告)号：US5339011A
公开(公告)日：1994-08-16
申请号：US010776
申请日：1993-01-29
申请人： Takahiko Tamura , Satoshi Miura
发明人： Takahiko Tamura , Satoshi Miura
IPC分类号： H04N9/73 , G09G1/06 , G09G1/28 , H04N9/72 , G09G1/04 , H01J1/04 , H04N5/18
CPC分类号： G09G1/06 , G09G1/285 , H04N9/72
摘要： A display device comprising a CRT having a reduced number of components for automatic cutoff adjustment. The device needs an IC having a less number of connection pins. The device adds reference pulses to given portions within every field of video signals. The resulting cathode currents are converted into voltage pulses. These voltage pulses are compared with a reference voltage by a comparator. The output signal from this comparator is counted by forward-backward counters for three primary colors, respectively, and converted into analog form. Level shift circuits for the three primary colors, respectively, control the DC components of the video signals according to the output signals from the D/A converters. In this way, the cutoff characteristics of the CRT are controlled.
摘要翻译：一种显示装置，包括具有减少的用于自动切断调节的部件数量的CRT。该器件需要一个连接引脚数较少的IC。该设备将参考脉冲添加到视频信号的每个场内的给定部分。所得到的阴极电流被转换成电压脉冲。这些电压脉冲通过比较器与参考电压进行比较。来自该比较器的输出信号分别由三原色的前向 - 后向计数器计数，并转换为模拟形式。三原色电平移位电路分别根据D / A转换器的输出信号控制视频信号的直流分量。以这种方式，控制CRT的截止特性。

29. 发明授权

US5196769A Motor control device 失效
标题翻译：电机控制装置
公开(公告)号：US5196769A
公开(公告)日：1993-03-23
申请号：US776292
申请日：1991-12-09
申请人： Hiroshi Chiba , Satoshi Miura , Motonobu Hattori , Takeshi Obata
发明人： Hiroshi Chiba , Satoshi Miura , Motonobu Hattori , Takeshi Obata
IPC分类号： H02P27/06 , D01H1/32 , H02P5/74
CPC分类号： H02P5/74 , D01H1/32 , H02P29/025
摘要： The present invention relates to a motor control device using an inverter or inverters, in particular, it relates to a motor control device suitable for the prevention of inertial rotation of a motor or motors or for the maintenance of synchronized operation of a plurality of motors in a service-interruption time; a DC side voltage is compared with a target voltage and a correction signal relating to the deviation voltage is added to a speed instruction for the inverter; thereby in a service-interruption time a motor can be continuously and smoothly decelerated keeping the DC side voltage of an inverter at a target voltage value. By utilizing a motor control device according to the present invention for a spinning machine etc., unevenness in thread winding or thread cut in a service interruption time can be prevented.

30. 发明授权

US08957924B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08957924B2
公开(公告)日：2015-02-17
申请号：US13807753
申请日：2011-07-01
申请人： Satoshi Miura , Yukihide Kohtoku
发明人： Satoshi Miura , Yukihide Kohtoku
IPC分类号： G09G5/10 , G09G3/36 , F21V8/00 , G02F1/1335 , G09G3/34 , G02F1/133
CPC分类号： G09G3/3611 , G02B6/0028 , G02B6/0038 , G02F1/13318 , G02F1/133615 , G02F2001/133618 , G02F2001/133626 , G09G3/3406 , G09G2320/0626 , G09G2360/144
摘要： A light-collecting type liquid crystal display device capable of displaying an image properly is provided. The liquid crystal display device 100 includes a liquid crystal panel 10; an irradiation section 31, a control device 61, and a plate-like member 20 attached to a part (10a) of the liquid crystal panel 10. A light guiding section 40 for collecting natural light 51 and propagating the light is located on a first surface 21 of the plate-like member 20; and the light guiding section 40 is connected to the irradiation section 31. A plurality of optical sensors 46 are provided on the first surface 21 of the plate-like member 20. The irradiation section 31 includes a plurality of LED elements 30. The control device 61 is connected to an LED driving section 63. The control device 61 is connected to the optical sensors 46. The control device 61 is structured to control an amount of light to be emitted from each of the plurality of LED elements 30 by use of the LED driving section 63 based on the amounts of light detected by the optical sensors 46.
摘要翻译：提供能够适当地显示图像的集光型液晶显示装置。液晶显示装置100包括液晶面板10; 照射部31，控制装置61和安装在液晶面板10的一部分（10a）上的板状构件20.用于收集自然光51并传播光的导光部40位于第一板状构件20的表面21; 导光部40与照射部31连接。多个光传感器46设置在板状部件20的第一面21上。照射部31包括多个LED元件30.控制装置 61连接到LED驱动部分63.控制装置61连接到光学传感器46.控制装置61被构造成通过使用控制装置61来控制从多个LED元件30中的每一个发射的光量 LED驱动部63基于由光传感器46检测出的光量。

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