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21. 发明授权

US09580310B1 Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum 有权
标题翻译：从固体铝制造氢氧化铝的方法和装置
公开(公告)号：US09580310B1
公开(公告)日：2017-02-28
申请号：US14696281
申请日：2015-04-24
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： C01B3/08 , C01B3/00 , C01F7/42 , C01B3/04 , B01J19/24
CPC分类号： C01B3/08 , B01J19/24 , B01J2219/24 , C01B3/042 , C01F5/04 , C01F7/42 , C01F7/428 , Y02E60/36
摘要： A method and apparatus for producing hydrogen and a passivating oxide using water splitting techniques is disclosed. The apparatus comprises a container filled with a passivating-oxide preventing agent that is substantially inert to water in an effective amount to prevent passivation of a solid-state material during oxidation and a conduit for inserting a solid-state material into the passivating-oxide preventing agent in which the solid-state material is submerged in the passivating-oxide preventing agent without being in direct contact with water. The solid-state material is capable of dissolving in the passivating-oxide preventing agent and reacting with the water. Thus, the method provides continuous dissolution of the solid-state material into the passivating-oxide preventing agent and its alloys in the presence of excess water at or near room temperature to enable continuous generation of hydrogen, passivating oxide and heat.
摘要翻译：公开了一种使用水分解技术生产氢气和钝化氧化物的方法和装置。该装置包括填充有钝化氧化物防止剂的容器，其有效量的水基本上是惰性的，以防止氧化期间固体材料的钝化，以及用于将固态材料插入钝化氧化物防止剂的导管其中固态材料浸没在钝化 - 氧化物防止剂中而不直接与水接触的试剂。固态物质能够溶解在钝化氧化物防止剂中并与水反应。因此，该方法提供了在室温或接近室温的多余水存在下，将固态材料连续溶解到钝化 - 氧化物防止剂及其合金中，以连续产生氢气，钝化氧化物和加热。

22. 发明授权

US09056769B1 Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum 有权
标题翻译：从固体铝制造氢氧化铝的方法和装置
公开(公告)号：US09056769B1
公开(公告)日：2015-06-16
申请号：US14261791
申请日：2014-04-25
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： C01B3/00 , C01B3/08 , C01F7/42 , C01B3/04
CPC分类号： C01B3/08 , B01J19/24 , B01J2219/24 , C01B3/042 , C01F5/04 , C01F7/42 , C01F7/428 , Y02E60/36
摘要： A method and apparatus for producing hydrogen and a passivating oxide using water splitting techniques is disclosed. The apparatus comprises a container filled with a passivating-oxide preventing agent that is substantially inert to water in an effective amount to prevent passivation of a solid-state material during oxidation and a means for inserting a solid-state material into the passivating-oxide preventing agent in which the solid-state material is submerged in the passivating-oxide preventing agent without being in direct contact with water. The solid-state material is capable of dissolving in the passivating-oxide preventing agent and reacting with the water. Thus, the method provides continuous dissolution of the solid-state material into the passivating-oxide preventing agent and its alloys in the presence of excess water at or near room temperature to enable continuous generation of hydrogen, passivating oxide and heat.
摘要翻译：公开了一种使用水分解技术生产氢气和钝化氧化物的方法和装置。该装置包括填充有钝化 - 氧化物防止剂的容器，该钝化氧化物防止剂基本上对水有惰性的有效量，以防止氧化期间固体材料的钝化，以及用于将固态材料插入钝化氧化物防止装置其中固态材料浸没在钝化 - 氧化物防止剂中而不直接与水接触的试剂。固态物质能够溶解在钝化氧化物防止剂中并与水反应。因此，该方法提供了在室温或接近室温的多余水存在下，将固态材料连续溶解到钝化 - 氧化物防止剂及其合金中，以连续产生氢气，钝化氧化物和加热。

23. 发明申请

US20120052001A1 ENERGY STORAGE AND GENERATION OF HYDROGEN AND HEAT ON DEMAND 审中-公开
标题翻译：能源储存和氢发生量
公开(公告)号：US20120052001A1
公开(公告)日：2012-03-01
申请号：US13218033
申请日：2011-08-25
申请人： Jerry M. Woodall , Go Choi
发明人： Jerry M. Woodall , Go Choi
IPC分类号： C01B3/08 , C01F7/02 , C09K3/00
CPC分类号： C01B3/08 , C22C21/00 , Y02E60/36 , Y02P20/128
摘要： A composition for splitting water into hydrogen and a hydroxide component, the composition comprising a solid-state component including at least one of aluminum and tin and a liquid metal alloy that is capable of at least partially dissolving the solid-state component, the liquid metal alloy including at least one of gallium and indium.
摘要翻译：一种用于将水分解成氢气和氢氧化物组分的组合物，所述组合物包含包含铝和锡中的至少一种的固态组分和能够至少部分溶解固态组分的液态金属合金，所述液态金属合金，其包括镓和铟中的至少一种。

24. 发明申请

US20090064922A1 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices 审中-公开
标题翻译：超掺杂半导体材料和超掺杂半导体材料和器件的方法
公开(公告)号：US20090064922A1
公开(公告)日：2009-03-12
申请号：US11708652
申请日：2007-02-20
申请人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
发明人： Thomas D. Boone , Eric S. Harmon , Robert D. Koudelka , David B. Salzman , Jerry M. Woodall
IPC分类号： C30B15/14 , C30B23/02
CPC分类号： H01L33/025 , C30B23/02 , C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02395 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/02579 , H01L21/02631 , H01L29/207 , H01L29/36 , H01L29/66318 , H01L29/66462 , H01L29/66924 , H01L29/7371 , H01L29/7785 , H01L29/802
摘要： Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems.Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.
摘要翻译：公开了用于生产高掺杂半导体材料的方法。使用本发明，可以实现超过传统的已建立的载流子饱和极限而没有有害的副作用的掺杂密度。此外，公开了高度掺杂的半导体材料，以及使用所述材料的改进的电子和光电子器件/部件。通过本发明实现的创新材料和工艺为各种基于半导体的微电子和光电子器件/系统产生显着的性能改进和/或降低成本。材料在富含阴离子的环境中生长，在优选的实施方案中，其在贫氧环境中生长期间由适度的底物温度产生。与现有技术材料相比，这些材料在较高的掺杂浓度下表现出较少的非辐射复合中心，并且高度掺杂的物质状态可以表现出在较高的掺杂水平和较高的多数载流子浓度的情况下以辐射复合为主的少数载流子寿命，。这些新型材料所能实现的重要应用包括高性能电子或光电子器件，可以更小更快地捕获或发光，而高性能电子器件（如可以更小更快更冷却的晶体管）。

25. 发明授权

US5221367A Strained defect-free epitaxial mismatched heterostructures and method of fabrication 失效
标题翻译：应变无缺陷的异种结构异构体和制造方法
公开(公告)号：US5221367A
公开(公告)日：1993-06-22
申请号：US227955
申请日：1988-08-03
申请人： Matthew F. Chisholm , Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall
发明人： Matthew F. Chisholm , Peter D. Kirchner , Alan C. Warren , Jerry M. Woodall
IPC分类号： C30B25/02 , C30B29/40 , C30B29/68 , H01L21/20 , H01L21/203 , H01L29/201
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , Y10S148/072 , Y10S148/097 , Y10S438/933 , Y10S438/938
摘要： Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.

26. 发明授权

US4801984A Semiconductor ohmic contact 失效
标题翻译：半导体欧姆接触
公开(公告)号：US4801984A
公开(公告)日：1989-01-31
申请号：US005321
申请日：1987-01-15
申请人： Jerry M. Woodall
发明人： Jerry M. Woodall
IPC分类号： H01L21/285 , H01L29/205 , H01L29/45 , H01L29/161 , H01L23/48 , H01L29/20
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/205
摘要： An ohmic contact to intermetallic semiconductors with a resistance of much less than 10.sup.-6 ohm cm.sup.2 can be provided by introducing between the semiconductor and an external metal contact an atomically compatible barrier-free graded layer of a conductor having at the interface with a metal external contact an energy gap width of the semiconductor less than 0.5 electron volts. An ohmic contact for gallium arsenide can be provided by a graded region of indium gallium arsenide that decreases to indium arsenide at the interface with a metal.
摘要翻译：通过在半导体和外部金属接触之间引入具有与金属外部的界面处的导体的原子兼容的无障碍梯度层，可以提供电阻远小于10-6欧姆·cm 2的金属间半导体的欧姆接触接触半导体的能隙宽度小于0.5电子伏。砷化镓的欧姆接触可以通过在与金属的界面处降低到砷化铟的砷化铟镓的分级区域来提供。

27. 发明授权

US4638342A Space charge modulation device 失效
标题翻译：空间电荷调制装置
公开(公告)号：US4638342A
公开(公告)日：1987-01-20
申请号：US419381
申请日：1982-09-17
申请人： John L. Freeouf , Thomas N. Jackson , Steven E. Laux , Jerry M. Woodall
发明人： John L. Freeouf , Thomas N. Jackson , Steven E. Laux , Jerry M. Woodall
IPC分类号： H01L29/80 , H01L21/338 , H01L29/772 , H01L29/812 , H01L29/56
CPC分类号： H01L29/8122 , H01L29/7722
摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
摘要翻译：一种在半导体结构中采用二维空间电荷调制的电子装置。该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。整流触点的偏压将影响其他触点之间的导通。

28. 发明授权

US4533940A High spatial resolution energy discriminator 失效
标题翻译：高空间分辨率能量鉴别器
公开(公告)号：US4533940A
公开(公告)日：1985-08-06
申请号：US503945
申请日：1983-06-13
申请人： Barbara A. Chappell , Terry I. Chappell , Jerry M. Woodall
发明人： Barbara A. Chappell , Terry I. Chappell , Jerry M. Woodall
IPC分类号： H04N5/30 , H01J29/45 , H01L27/14 , H01L27/146 , H04N9/04
CPC分类号： H01L27/14647 , H01J29/45
摘要： An energy discriminator is provided wherein energy, entering through a receiving surface into a multilayer semiconductor monocrystalline body is converted into hole-electron pair carriers in different particular energy responsive layers and the electrons thereof are collected in potential wells that are asymmetric to electron flow associated with the particular layer.
摘要翻译：提供了一种能量鉴别器，其中通过接收表面进入多层半导体单晶体的能量被转换成不同特定能量响应层中的空穴 - 电子对载流子，并且其电子被收集在与电子流不对称的势阱中特定层。

29. 发明授权

US10594249B1 Photovoltaic-phase change battery system for converting intermittent solar power into day and night electric power 有权
公开(公告)号：US10594249B1
公开(公告)日：2020-03-17
申请号：US16297149
申请日：2019-03-08
申请人： Jerry M. Woodall , Thomas E. Rowley
发明人： Jerry M. Woodall , Thomas E. Rowley
IPC分类号： H02S10/30 , H02S20/30 , H02S40/44 , H01L31/028 , H01L31/042 , H01L31/0304
摘要： A photovoltaic phase change battery system for converting intermittent solar power into day and night electrical power is disclosed. A photovoltaic array is pointed toward a solar energy source, such as Earth's sun during daytime operation, where a portion of the electricity generated is used to convert a pool of phase change material to a molten state. During night time operation the photovoltaic array is pointed at the phase change material to receive photons from thermal radiation and continue the electricity generating process.

30. 发明授权

US06607932B2 High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region 失效
标题翻译：显示了将少数载流子空间重定位到非辐射复合区域的高调制频率发光器件
公开(公告)号：US06607932B2
公开(公告)日：2003-08-19
申请号：US10229809
申请日：2002-08-28
申请人： Jerry M. Woodall , Robert D. Koudelka
发明人： Jerry M. Woodall , Robert D. Koudelka
IPC分类号： H01L2100
CPC分类号： H01L33/02 , B82Y10/00 , B82Y20/00 , H01S5/041 , H01S5/2009
摘要： A light emitting device providing a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the second part, that includes a region that exhibits a low radiative recombination efficiency and a short minority carrier lifetime. In response to a first stimulus minority carriers are constrained by the second part to remain in the first part, leading to an increase of minority carrier radiative recombination in the first part and an increase in light emission; while in response to a second stimulus the minority carriers are enabled to cross the minority carrier barrier of the second part to enter the third part, leading to a decrease of minority carrier radiative recombination in the first part and a decrease in light emission.
摘要翻译：一种提供第一部分的发光器件，该第一部分包括包含多余电子 - 空穴对的过剩少数载流子源; 第二部分，包括第一部分，包括少数载体障碍; 以及耦合到第二部分的第三部分，其包括呈现低辐射复合效率和少量载流子寿命的区域。响应于第一次刺激，少数载流子被第二部分约束，保留在第一部分，导致第一部分少数载流子辐射复合增加，光发射增加; 而响应于第二次刺激，少数载流子能够跨越第二部分的少数载流子势垒进入第三部分，导致第一部分中少数载流子辐射复合的减少和光发射的减少。

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