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    • 23. 发明申请
    • Method and apparatus for channel equalization
    • 信道均衡的方法和装置
    • US20050025229A1
    • 2005-02-03
    • US10852854
    • 2004-05-24
    • William JonesGeorge Zimmerman
    • William JonesGeorge Zimmerman
    • H04B3/06H04L25/03H03K5/159
    • H04L25/03343H04L25/03146
    • A method and apparatus is disclosed to overcome the effects of intersymbol interference during data transmission. Overcoming the effects of intersymbol interference makes possible higher data transmission rates for a given error rate. In one embodiment a receiver processing system a first, second and third filter, such that the second and third filter comprise feedback filters. Filter coefficients are calculated to reduce the undesirable effects of the channel, such as intersymbol interference. A training process occurs to establish the first filter as a mixed phase filter and the third filter as minimum phase filter. The second filter is configured based on the transfer function of the channel and one or more coefficients may be set to a predetermined value.
    • 公开了一种克服数据传输期间符号间干扰的影响的方法和装置。 克服符号间干扰的影响使给定错误率的数据传输速率更高。 在一个实施例中,接收机处理系统是第一,第二和第三滤波器,使得第二和第三滤波器包括反馈滤波器。 计算滤波器系数以减少信道的不期望的影响,例如符号间干扰。 发生训练过程以建立作为混合相位滤波器的第一滤波器,并且将第三滤波器用作最小相位滤波器。 基于信道的传递函数来配置第二滤波器,并且可以将一个或多个系数设置为预定值。
    • 25. 发明授权
    • Process for the preparation of quasi-crystalline boehmites
    • 制备准晶体勃艮第的方法
    • US06506358B1
    • 2003-01-14
    • US09636694
    • 2000-08-11
    • Dennis StamiresPaul O'ConnorGregory PearsonWilliam Jones
    • Dennis StamiresPaul O'ConnorGregory PearsonWilliam Jones
    • C01F700
    • C01F7/448B01J21/04C01F7/34C01F7/36C01P2002/04C01P2002/72
    • The present invention pertains to an improved process for the preparation of quasi-crystalline boehmite. In this improved process a quasi-crystalline boehmite precursor is aged at a pH below 7, prefereably under hydrothermal conditions. It was found that when conducting the preparation processes for quasi-crystalline aluminas described in the prior art at a pH below 7 and under hydrothermal conditions instead of the high pH and thermal aging used in the prior art, QCBs with higher crystallinity are obtained. In the process according to the invention additives may be added to the quasi-crystalline boehmite precursor. This results in a high quality QCB with additives in a homogeneously dispersed state. Suitable additives are compounds containing elements selected from the group of rare earth metals alkaline earth metals, transition metals, actinides, silicon, gallium, boron, and phosphorus.
    • 本发明涉及制备准晶状勃姆石的改进方法。 在这种改进的方法中,准结晶勃姆石前体在pH低于7的条件下老化,优选在水热条件下。 发现在现有技术中描述的准晶体氧化铝的制备方法在pH低于7且在水热条件下代替现有技术中使用的高pH和热老化,获得具有较高结晶度的QCB。 在根据本发明的方法中,可以将添加剂加入到准结晶勃姆石前体中。 这导致具有均匀分散状态的添加剂的高质量QCB。 合适的添加剂是含有选自稀土金属碱土金属,过渡金属,锕系元素,硅,镓,硼和磷的元素的化合物。
    • 28. 发明授权
    • Circuit and method for interconnecting stacked integrated circuit dies
    • 用于互连堆叠集成电路管芯的电路和方法
    • US08680582B2
    • 2014-03-25
    • US13156265
    • 2011-06-08
    • Jacob Robert AndersonWilliam Jones
    • Jacob Robert AndersonWilliam Jones
    • H01L27/118
    • H01L25/0657H01L23/481H01L2224/16H01L2225/06513H01L2225/06527H01L2225/06541H01L2924/3011Y10T307/76
    • Signals are routed to and from identical stacked integrated circuit dies by selectively coupling first and second bonding pads on each of the dies to respective circuits fabricated on the dies through respective transistors. The transistors connected to the first bonding pads of an upper die are made conductive while the transistors connected to the second bonding pads of the upper die are made non-conductive. The transistors connected to the second bonding pads of a lower die are made conductive while the transistors connected to the first bonding pads of the lower die are made non-conductive. The second bonding pads of the upper die are connected to the second bonding pads of the lower die through wafer interconnects extending through the upper die. Signals are routed to and from the circuits on the first and second dies through the first and second bonding pads, respectively.
    • 通过选择性地将每个管芯上的第一和第二接合焊盘与通过相应的晶体管在管芯上制造的各个电路相耦合,将信号路由至相同的堆叠集成电路管芯。 连接到上模的第一接合焊盘的晶体管导通,而连接到上模的第二焊盘的晶体管是不导电的。 连接到下模的第二接合焊盘的晶体管被​​导通,而连接到下模的第一焊盘的晶体管导通。 上模的第二接合焊盘通过延伸穿过上模的晶片互连连接到下模的第二焊盘。 信号分别通过第一和第二接合焊盘被引导到第一和第二裸片上的电路和从第一和第二裸片上的电路。
    • 29. 发明授权
    • Circuit and method for interconnecting stacked integrated circuit dies
    • 用于互连堆叠集成电路管芯的电路和方法
    • US07679198B2
    • 2010-03-16
    • US11800472
    • 2007-05-04
    • Jacob Robert AndersonWilliam Jones
    • Jacob Robert AndersonWilliam Jones
    • H01L29/40
    • H01L25/0657H01L23/481H01L2224/16H01L2225/06513H01L2225/06527H01L2225/06541H01L2924/3011Y10T307/76
    • Signals are routed to and from identical stacked integrated circuit dies by selectively coupling first and second bonding pads on each of the dies to respective circuits fabricated on the dies through respective transistors. The transistors connected to the first bonding pads of an upper die are made conductive while the transistors connected to the second bonding pads of the upper die are made non-conductive. The transistors connected to the second bonding pads of a lower die are made conductive while the transistors connected to the first bonding pads of the lower die are made non-conductive. The second bonding pads of the upper die are connected to the second bonding pads of the lower die through wafer interconnects extending through the upper die. Signals are routed to and from the circuits on the first and second dies through the first and second bonding pads, respectively.
    • 通过选择性地将每个管芯上的第一和第二接合焊盘与通过相应的晶体管在管芯上制造的各个电路相耦合,将信号路由至相同的堆叠集成电路管芯。 连接到上模的第一接合焊盘的晶体管导通,而连接到上模的第二焊盘的晶体管是不导电的。 连接到下模的第二接合焊盘的晶体管被​​导通,而连接到下模的第一焊盘的晶体管导通。 上模的第二接合焊盘通过延伸穿过上模的晶片互连连接到下模的第二焊盘。 信号分别通过第一和第二接合焊盘被引导到第一和第二裸片上的电路和从第一和第二裸片上的电路。