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21. 发明授权

US08618621B2 Semiconductor device layer structure and method of fabrication 有权
标题翻译：半导体器件层结构及其制造方法
公开(公告)号：US08618621B2
公开(公告)日：2013-12-31
申请号：US12938568
申请日：2010-11-03
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L29/84
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

22. 发明申请

US20130043961A1 DUPLEXER WITH SHIELDING BONDWIRES BETWEEN FILTERS 审中-公开
标题翻译：过滤器之间具有屏蔽粘合剂的双面器
公开(公告)号：US20130043961A1
公开(公告)日：2013-02-21
申请号：US13209499
申请日：2011-08-15
申请人： Bernhard Gebauer , Martin Handtmann
发明人： Bernhard Gebauer , Martin Handtmann
IPC分类号： H03H9/70
CPC分类号： H03H9/0566
摘要： A duplexer includes first and second filters, and a first shielding bondwire. The first filter includes a first bondwire connecting the first filter to a printed circuit board, the first bondwire forming a portion of a first virtual loop having a first virtual area, where first current passing through the first bondwire generates a first magnetic field. The second filter includes a second bondwire connecting the second filter to the printed circuit, the second bondwire forming a portion of a second virtual loop having a second virtual area. The first shielding bondwire includes first and second ends connected to a conductor of the printed circuit board to form a closed electrical first shielding loop having a corresponding first shielding area. The magnetic field induces shielding current in the first shielding loop, which generates a first compensating magnetic field that attenuates the first magnetic field.
摘要翻译：双工器包括第一和第二滤波器以及第一屏蔽接合线。第一滤波器包括将第一滤波器连接到印刷电路板的第一接合线，第一接合线形成具有第一虚拟区域的第一虚拟环路的一部分，其中通过第一接合线的第一电流产生第一磁场。第二过滤器包括将第二过滤器连接到印刷电路的第二接合线，第二接合线形成具有第二虚拟区域的第二虚拟环路的一部分。第一屏蔽接合线包括连接到印刷电路板的导体的第一和第二端，以形成具有对应的第一屏蔽区域的封闭的电气第一屏蔽环路。该磁场在第一屏蔽环路中产生屏蔽电流，其产生使第一磁场衰减的第一补偿磁场。

23. 发明授权

US08258894B2 Coupled resonator filter with a filter section 失效
标题翻译：带滤波器的耦合谐振滤波器
公开(公告)号：US08258894B2
公开(公告)日：2012-09-04
申请号：US11756571
申请日：2007-05-31
申请人： Robert Thalhammer , Martin Handtmann
发明人： Robert Thalhammer , Martin Handtmann
IPC分类号： H03H9/58 , H01L41/22
CPC分类号： H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/605 , Y10T29/42
摘要： A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.
摘要翻译：体声波（BAW）滤波器装置包括第一端口，第二端口，第一耦合谐振器滤波器级，第二耦合谐振器滤波器级和滤波器部分。第一耦合谐振器滤波器级包括连接到第一端口的第一BAW谐振器和声耦合到第一BAW谐振器的第二BAW谐振器。第二耦合谐振器滤波器级包括连接到第二端口的第三BAW谐振器和声耦合到第三BAW谐振器的第四BAW谐振器。滤波器部分包括第五个BAW谐振器，第五个BAW谐振器连接在第二个BAW谐振器和第四个BAW谐振器之间。

24. 发明申请

US20090096550A1 Bulk acoustic wave device 有权
标题翻译：体声波装置
公开(公告)号：US20090096550A1
公开(公告)日：2009-04-16
申请号：US11871711
申请日：2007-10-12
申请人： Martin Handtmann , Jyrki Kaitila , Robert Thalhammer , Bernhard Gebauer
发明人： Martin Handtmann , Jyrki Kaitila , Robert Thalhammer , Bernhard Gebauer
IPC分类号： H03H9/58
CPC分类号： H03H9/585 , H03H9/0095 , H03H9/583 , H03H9/584 , H03H9/589 , H03H9/60
摘要： An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.
摘要翻译：一种装置包括声耦合的堆叠晶体滤波器和体声波谐振器。

25. 发明申请

US20080055020A1 Acoustic Resonator 有权
标题翻译：声谐振器
公开(公告)号：US20080055020A1
公开(公告)日：2008-03-06
申请号：US11513895
申请日：2006-08-31
申请人： Martin Handtmann , Jyrki Kaitila , Andreas Meckes , Lueder Elbrecht
发明人： Martin Handtmann , Jyrki Kaitila , Andreas Meckes , Lueder Elbrecht
IPC分类号： H03H9/58
CPC分类号： H03H9/585 , H03H9/0095 , H03H9/589 , H03H9/605
摘要： An acoustic resonator is described, the acoustic resonator comprising a stack of a first and a second piezoelectric body, wherein said first and second piezoelectric bodies have substantially the same spatial piezoelectric orientation, an intermediate intermediate electrode being arranged between said first and said second piezoelectric body forming a first terminal of said acoustic resonator, and first and second electrodes, wherein said first electrode is arranged such that said first piezoelectric body is arranged between said first electrode and said intermediate electrode, wherein said second electrode is arranged such that said second piezoelectric body is arranged between said second electrode and said intermediate electrode, and wherein said first and said second electrode are electrically connected to each other forming a second terminal of said acoustic resonator.
摘要翻译：描述了声谐振器，声谐振器包括第一和第二压电体的堆叠，其中所述第一和第二压电体具有基本上相同的空间压电取向，中间中间电极设置在所述第一和第二压电体之间形成所述声谐振器的第一端子，以及第一和第二电极，其中所述第一电极被布置成使得所述第一压电体布置在所述第一电极和所述中间电极之间，其中所述第二电极被布置成使得所述第二压电体布置在所述第二电极和所述中间电极之间，并且其中所述第一和所述第二电极彼此电连接，形成所述声共振器的第二端子。

26. 发明授权

US08330325B1 Bulk acoustic resonator comprising non-piezoelectric layer 有权
标题翻译：包含非压电层的体声波谐振器
公开(公告)号：US08330325B1
公开(公告)日：2012-12-11
申请号：US13161946
申请日：2011-06-16
申请人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
发明人： Dariusz Burak , Jyrki Kaitila , Alexandre Shirakawa , Martin Handtmann , Phil Nikkel
IPC分类号： H03H9/15 , H03H9/125
CPC分类号： H03H9/173 , H03H9/585
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.
摘要翻译：在代表性的实施例中，体声波（BAW）谐振器结构包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层; 设置在所述第一压电层上的第二电极，其中所述第一压电层的晶体的c轴取向基本上彼此对准; 设置在所述第二电极上的第二压电层; 非压电层; 以及设置在第二压电层上的第三电极。

27. 发明申请

US20110042764A1 APPARATUS COMPRISING A DEVICE AND METHOD FOR PRODUCING SAME 有权
标题翻译：包含装置的装置及其制造方法
公开(公告)号：US20110042764A1
公开(公告)日：2011-02-24
申请号：US12938568
申请日：2010-11-03
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L29/84
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

28. 发明授权

US07786825B2 Bulk acoustic wave device with coupled resonators 有权
标题翻译：具有耦合谐振器的体声波器件
公开(公告)号：US07786825B2
公开(公告)日：2010-08-31
申请号：US11756521
申请日：2007-05-31
申请人： Martin Handtmann , Jyrki Kaitila
发明人： Martin Handtmann , Jyrki Kaitila
IPC分类号： H03H9/58
CPC分类号： H03H9/605 , H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/60
摘要： A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel.
摘要翻译：体声波器件包括第一和第二谐振器，它们是声学耦合的并且并联电连接。

29. 发明申请

US20080297279A1 Coupled Resonator Filter with a Filter Section 失效
标题翻译：带过滤器部分的耦合谐振滤波器
公开(公告)号：US20080297279A1
公开(公告)日：2008-12-04
申请号：US11756571
申请日：2007-05-31
申请人： Robert Thalhammer , Martin Handtmann
发明人： Robert Thalhammer , Martin Handtmann
IPC分类号： H03H9/58 , H01L41/22
CPC分类号： H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/605 , Y10T29/42
摘要： A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.
摘要翻译：体声波（BAW）滤波器装置包括第一端口，第二端口，第一耦合谐振器滤波器级，第二耦合谐振器滤波器级和滤波器部分。第一耦合谐振器滤波器级包括连接到第一端口的第一BAW谐振器和声耦合到第一BAW谐振器的第二BAW谐振器。第二耦合谐振器滤波器级包括连接到第二端口的第三BAW谐振器和声耦合到第三BAW谐振器的第四BAW谐振器。滤波器部分包括第五个BAW谐振器，第五个BAW谐振器连接在第二个BAW谐振器和第四个BAW谐振器之间。

30. 发明授权

US08209826B2 Method for manufacturing a coupled resonator device 失效
标题翻译：制造耦合谐振器装置的方法
公开(公告)号：US08209826B2
公开(公告)日：2012-07-03
申请号：US12110961
申请日：2008-04-28
申请人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
发明人： Martin Handtmann , Klaus-Guenter Oppermann , Martin Fritz
IPC分类号： H04R17/00 , C23F1/00
CPC分类号： H03H3/02 , H03H9/584 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.
摘要翻译：一种耦合谐振器装置的制造方法包括在第一基板上形成第一BAW器件，在第二基板上形成第二BAW器件，以及将第一和第二BAW器件接合，使得结合的第一和第二BAW- 器件夹在第一和第二衬底之间。

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