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21. 发明授权

US07872906B2 Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus 有权
标题翻译：单向电流磁化反转磁阻元件和磁记录装置
公开(公告)号：US07872906B2
公开(公告)日：2011-01-18
申请号：US12337657
申请日：2008-12-18
申请人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
发明人： Katsuya Miura , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
摘要翻译：通过使用单向写入电流进行写入的存储器。电流脉冲宽度不同的电流被施加到由具有固定磁化方向的第一铁磁性层，具有可变磁化方向的第二铁磁层构成的磁阻元件的膜厚度方向上的磁阻元件，具有可变磁化方向的第二铁磁层，位于第一铁磁层和第二铁磁层之间的第一非磁性层和位于第二铁磁层和第三铁磁层之间的第二非磁性层，以使第二铁磁层和第二铁磁层之间的第二非磁性层的磁化方向反转，铁磁层或第三铁磁层通过使用自旋转移扭矩。

22. 发明申请

US20070230007A1 Magnetic recording device 失效
公开(公告)号：US20070230007A1
公开(公告)日：2007-10-04
申请号：US11712395
申请日：2007-03-01
申请人： Hiromasa Takahashi , Kenchi Ito
发明人： Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11B5/02
CPC分类号： G11B5/02 , G11B5/1278 , G11B11/08
摘要： A magnetic recording device which can write magnetic information with high density. The device uses, for a magnetic recording layer of a magnetic recording medium, a magnetic material whose anisotropy energy varies with an applied electric field. The head has an electrode for applying an electric field to a recording area of the magnetic recording medium. Magnetic recording is performed by applying an AC electric field from the electrode while a DC magnetic field is applied to the recording area of the magnetic recording layer.

23. 发明授权

US09042165B2 Magnetoresistive effect element, magnetic memory cell using same, and random access memory 有权
标题翻译：磁阻效应元件，使用其的磁存储单元和随机存取存储器
公开(公告)号：US09042165B2
公开(公告)日：2015-05-26
申请号：US13575387
申请日：2011-01-25
申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11C11/00 , H01L27/22 , B82Y25/00 , H01F10/32 , H01L43/08 , H01F10/16 , H01F10/12
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetoresistive effect element uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer, an MgO barrier layer, and a CoFeB layer. By inserting the intermediate layers, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
摘要翻译：磁阻效应元件使用垂直磁化材料并具有高TMR比。由熔点为1600℃的元素金属构成的中间层或由CoFeB层，MgO阻挡层和CoFeB层构成的结构的外部含有金属的合金。通过插入中间层，退火过程中CoFeB层的结晶从MgO（001）晶体侧前进，使得CoFeB层具有bcc（001）中的结晶取向。

24. 发明申请

US20090180312A1 Unidirectional-Current Magnetization-Reversal Magnetoresistance Element and Magnetic Recording Apparatus 有权
标题翻译：单向电流磁化反转磁阻元件和磁记录装置
公开(公告)号：US20090180312A1
公开(公告)日：2009-07-16
申请号：US12337657
申请日：2008-12-18
申请人： Katsuya MIURA , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
发明人： Katsuya MIURA , Jun Hayakawa , Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11C11/02 , G11C11/14 , G11C11/416
CPC分类号： H01L27/224 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A memory for which writing is conducted by using a unidirectional write current. Currents which differ in current pulse width are applied to a magnetoresistance element in a film thickness direction of the magnetoresistance element consisting of a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a third ferromagnetic layer having a variable magnetization direction, a first non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer located between the second ferromagnetic layer and the third ferromagnetic layer, to reverse a magnetization direction of either the second ferromagnetic layer or the third ferromagnetic layer by using a spin-transfer torque.
摘要翻译：通过使用单向写入电流进行写入的存储器。电流脉冲宽度不同的电流被施加到由具有固定磁化方向的第一铁磁性层，具有可变磁化方向的第二铁磁层构成的磁阻元件的膜厚度方向上的磁阻元件，具有可变磁化方向的第二铁磁层，位于第一铁磁层和第二铁磁层之间的第一非磁性层和位于第二铁磁层和第三铁磁层之间的第二非磁性层，以使第二铁磁层和第二铁磁层之间的第二非磁性层的磁化方向反转，铁磁层或第三铁磁层通过使用自旋转移扭矩。

25. 发明授权

US07508625B2 Magnetic recording device 失效
标题翻译：磁记录装置
公开(公告)号：US07508625B2
公开(公告)日：2009-03-24
申请号：US11698929
申请日：2007-01-29
申请人： Hiromasa Takahashi , Kenchi Ito
发明人： Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11B5/127
CPC分类号： G11B5/02 , G11B5/1278 , G11B11/08
摘要： A magnetic recording device which can write magnetic information with high density. The device uses, for a magnetic recording layer of a magnetic recording medium, a magnetic material whose anisotropy energy varies with an applied electric field. The head has an electrode for applying an electric field to a recording area of the magnetic recording medium. Magnetic recording is performed by applying an AC electric field from the electrode while a DC magnetic field is applied to the recording area of the magnetic recording layer.
摘要翻译：一种可以高密度写入磁信息的磁记录装置。该装置对于磁记录介质的磁记录层使用其各向异性能量随施加的电场而变化的磁性材料。头部具有用于向磁记录介质的记录区域施加电场的电极。通过施加来自电极的交流电场来执行磁记录，同时向磁记录层的记录区域施加直流磁场。

26. 发明授权

US07436613B2 Magnetic recording device 失效
标题翻译：磁记录装置
公开(公告)号：US07436613B2
公开(公告)日：2008-10-14
申请号：US11712395
申请日：2007-03-01
申请人： Hiromasa Takahashi , Kenchi Ito
发明人： Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11B5/127
CPC分类号： G11B5/02 , G11B5/1278 , G11B11/08
摘要： A magnetic recording device which can write magnetic information with high density. The device uses, for a magnetic recording layer of a magnetic recording medium, a magnetic material whose anisotropy energy varies with an applied electric field. The head has an electrode for applying an electric field to a recording area of the magnetic recording medium. Magnetic recording is performed by applying an AC electric field from the electrode while a DC magnetic field is applied to the recording area of the magnetic recording layer.
摘要翻译：一种可以高密度写入磁信息的磁记录装置。该装置对于磁记录介质的磁记录层使用其各向异性能量随施加的电场而变化的磁性材料。头部具有用于向磁记录介质的记录区域施加电场的电极。通过施加来自电极的交流电场来执行磁记录，同时向磁记录层的记录区域施加直流磁场。

27. 发明授权

US06917088B2 Magneto-resistive devices 失效
标题翻译：磁阻器件
公开(公告)号：US06917088B2
公开(公告)日：2005-07-12
申请号：US10331664
申请日：2002-12-31
申请人： Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
发明人： Hiromasa Takahashi , Jun Hayakawa , Susumu Soeya , Kenchi Ito
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/14 , H01L29/82 , H01L29/84 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3903 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.
摘要翻译：磁阻装置具有高的再现输出，并且适合用作CPP-GMR装置。磁阻装置具有形成在第一和第二磁性层之间的第一磁性层，第二磁性层和非磁性间隔物。第一磁性层包含导电电子属于第一能带的磁性材料，第二磁性层含有导电电子属于第二能带的磁性材料。第一和第二能带可归因于相同轨道，从而增加磁阻变化率和调整电阻。

28. 发明授权

US06876523B2 Magnetic head, and the magnetic read-write devices, and the magnetic memory with magnetic sensors 失效
标题翻译：磁头，磁读写装置，以及带磁性传感器的磁存储器
公开(公告)号：US06876523B2
公开(公告)日：2005-04-05
申请号：US10225150
申请日：2002-08-22
申请人： Hiromasa Takahashi , Susumu Soeya , Jun Hayakawa , Kenchi Ito
发明人： Hiromasa Takahashi , Susumu Soeya , Jun Hayakawa , Kenchi Ito
IPC分类号： G11C11/14 , G11B5/31 , G11B5/39 , G11C11/15 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetic head at high sensitivity and with enhanced output having a magnetoresistive element of high output and optimal for use in CPP-GMR, the magnetoresistive element comprising a pinned layer 606 containing a half-metal, a free layer 608 formed on one main surface of the pinned layer 606, a spacer 607 formed between the pinned layer 606 and the free layer 608, an anti-ferromagnetic layer 603 formed on the main surface of the pinned layer 606, a soft magnetic layer 604 formed between the pinned layer 606 and the anti-ferromagnetic layer 606, and a noble-metallic layer 605 formed between the pinned layer 606 and the soft magnetic layer.
摘要翻译：具有高灵敏度和增强输出的磁头具有高输出的磁阻元件，并且最适用于CPP-GMR，该磁阻元件包括一个钉扎层606，该固定层606包含半金属，形成在一个主表面上的自由层608 被钉扎层606，形成在被钉扎层606和自由层608之间的隔离物607，形成在被钉扎层606的主表面上的反铁磁层603，形成在钉扎层606和被钉扎层606之间的软磁性层604。反铁磁层606和形成在被钉扎层606和软磁性层之间的贵金属层605。

29. 发明申请

US20090168501A1 Magnetic memory and method for writing to magnetic memory 失效
标题翻译：磁存储器和写入磁存储器的方法
公开(公告)号：US20090168501A1
公开(公告)日：2009-07-02
申请号：US12314577
申请日：2008-12-12
申请人： Kenchi Ito
发明人： Kenchi Ito
IPC分类号： G11C11/14 , G11C11/00 , G11C11/416
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： Provided is a magnetic random access memory employing spin torque magnetization reversal having a small write current value is applied. The memory includes: a switching element the conduction of which is controlled by a gate electrode, and three magnetoresistance effect elements connected to the switching element in series. Each magnetoresistance effect element may be a TMR element or a GMR element that includes a multilayered film composed of a fixed layer, a non-magnetic layer and a free layer. The central element serves as a storage element. The magnetoresistance effect elements are manufactured such that an absolute value of current necessary for changing a magnetization direction of at least one of the magnetoresistance effect elements located at both ends is larger than an absolute value of current necessary for changing a magnetization direction of the central magnetoresistance effect element.
摘要翻译：提供了采用具有小的写入电流值的自旋转矩磁化反转的磁性随机存取存储器。存储器包括：其导通由栅电极控制的开关元件，以及串联连接到开关元件的三个磁阻效应元件。每个磁阻效应元件可以是包括由固定层，非磁性层和自由层构成的多层膜的TMR元件或GMR元件。中心元件用作存储元件。制造磁阻效应元件使得位于两端的至少一个磁阻效应元件的磁化方向的变化所需的电流绝对值大于改变中心磁阻的磁化方向所需的电流的绝对值效果元素。

30. 发明申请

US20060215442A1 Conduction control device 有权
公开(公告)号：US20060215442A1
公开(公告)日：2006-09-28
申请号：US11386737
申请日：2006-03-23
申请人： Jorg Wunderlich , Kenchi Ito
发明人： Jorg Wunderlich , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1693 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A conduction control device comprises a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity and a junction region disposed between the first and second ferromagnetic regions. The device also comprises a gate for applying a field to the junction region so as to control charge carrier density within the junction region.

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