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21. 发明授权

US06486062B1 Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate 有权
标题翻译：选择性沉积非晶硅用于在N掺杂衬底上形成具有平滑界面的硅化镍
公开(公告)号：US06486062B1
公开(公告)日：2002-11-26
申请号：US09636510
申请日：2000-08-10
申请人： George J. Kluth , Matthew S. Buynoski
发明人： George J. Kluth , Matthew S. Buynoski
IPC分类号： H01L2144
CPC分类号： H01L29/41783 , H01L21/28518 , H01L21/28525 , H01L21/28562 , H01L29/665
摘要： A nickel silicide layer is formed on a semiconductor device having a crystalline silicon source/drain region doped with arsenic. Arsenic is doped into the crystalline silicon, by implantation, for example, so that the concentration of arsenic is slightly below the surface of the silicon. Annealing restores the crystalline structure of the silicon after implantation of the arsenic. Amorphous silicon is selectively deposited over the source/drain regions and over the top of the gate electrode. Nickel is deposited over the entire semiconductor device and a second anneal reacts the nickel with the amorphous silicon. The second anneal is timed so that the nickel reacts with the amorphous silicon, and does not substantially react with the silicon source/drain regions containing arsenic. Preventing the nickel from substantially reacting with the silicon source/drain regions containing arsenic provides a smooth interface between the resulting nickel silicide and the silicon source/drain regions doped with arsenic.
摘要翻译：在具有掺杂有砷的晶体硅源极/漏极区域的半导体器件上形成硅化镍层。例如，通过注入将砷掺杂到晶体硅中，使得砷的浓度略低于硅的表面。在退火后，退火恢复硅的晶体结构。非晶硅选择性地沉积在源极/漏极区域上方并且在栅电极的顶部上方。镍沉积在整个半导体器件上，第二次退火使镍与非晶硅反应。第二退火被定时，使得镍与非晶硅反应，并且基本上不与含有砷的硅源/漏区反应。防止镍与含有砷的硅源/漏区基本反应提供了所得的镍硅化物和掺杂有砷的硅源/漏区之间的平滑界面。

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