会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • Methods of testing fuse elements for memory devices
    • 测试存储器件熔丝元件的方法
    • US07733096B2
    • 2010-06-08
    • US11731960
    • 2007-04-02
    • Sung-Chieh LinPo-Hung Chen
    • Sung-Chieh LinPo-Hung Chen
    • G01R31/02
    • G11C29/02G11C17/165G11C29/027
    • A method of testing a fuse element for a memory device is provided. A first test probe is electrically connected to a program terminal of the memory device. A second test probe is electrically connected to a ground terminal. The fuse element is on an electrical circuit path between the program terminal and the ground terminal. The first and second test probes are electrically connected to a testing device. A first voltage is applied with the testing device between the program terminal and the ground terminal. At least part of a first current of the first voltage flows across the fuse element. The first voltage and the at least part of the first current that flows across the fuse element is not large enough to change the conductivity state of the fuse element. The first current is measured and used to evaluated the conductive state of the fuse element.
    • 提供一种测试用于存储器件的熔丝元件的方法。 第一测试探针电连接到存储器件的程序终端。 第二测试探针电连接到接地端子。 保险丝元件位于程序端子和接地端子之间的电路上。 第一和第二测试探针电连接到测试装置。 测试设备在程序终端和接地端子之间施加第一个电压。 第一电压的第一电流的至少一部分流过熔丝元件。 在熔断元件上流动的第一电流和第一电流的至少一部分不足以改变熔丝元件的导电状态。 测量第一电流并用于评估熔丝元件的导电状态。
    • 22. 发明授权
    • Extension box of storage media
    • 扩展箱的存储介质
    • US07459629B2
    • 2008-12-02
    • US11298539
    • 2005-12-12
    • Po-Hung Chen
    • Po-Hung Chen
    • H02G3/08
    • G11B33/122G11B33/025G11B33/124G11B33/1426
    • The invention discloses an extension box of storage media, which mainly utilized a plurality of heat dissipation fins protruding from a bottom surface of a bottom shell of the extension box. The heat dissipation fins efficaciously dissipate heat from the storage media, so it improves the dissipation heat efficiency and reduces breakdown for the storage media. The extension box of storage media of the present invention is electrically connected with an external electronic apparatus by a universal series bus (USB) or an IEEE 1394 interface connector for transmitting a data.
    • 本发明公开了一种存储介质的扩展箱,主要利用从扩展箱的底壳的底面突出的多个散热片。 散热片有效地从存储介质中散热,从而提高散热效率,减少存储介质的故障。 本发明的存储介质的扩展盒通过通用串行总线(USB)或IEEE 1394接口连接器与外部电子设备电连接,用于发送数据。
    • 27. 发明授权
    • Area efficient global row redundancy scheme for DRAM
    • 用于DRAM的区域有效的全局行冗余方案
    • US06101138A
    • 2000-08-08
    • US358982
    • 1999-07-22
    • Chun ShiahBor-Doou RongJeng-Tzong ShihPo-Hung Chen
    • Chun ShiahBor-Doou RongJeng-Tzong ShihPo-Hung Chen
    • G11C29/00G11C7/00
    • G11C29/808
    • In this invention a global row redundancy scheme for a DRAM is described which effectively uses the resources of the chip to produce an area efficient design. The DRAM is constructed from two types of memory blocks, one that has a redundant cell array and one that does not. Both memory block types contain a memory cell array and bit line sense amplifiers. The bit line sense amplifiers, contained on the block with the redundant cell array, are shared with the memory cell array also contained in the block, and thus eliminating the need for sense amplifiers for use only with the redundant cell array. Although, every block could contain a redundant cell array, only one or two blocks with the redundant cell array are normally used. In the global row redundancy scheme repair can be made to any row containing a failed memory cell located in any memory block by using any unused rows in any redundant cell array, and in doing so provides a maximum effectiveness in repairing DRAM's that provides the opportunity to maximize yield.
    • 在本发明中,描述了用于DRAM的全局行冗余方案,其有效地使用芯片的资源来产生区域有效的设计。 DRAM由两种类型的存储器块构成,一个具有冗余单元阵列,另一个不存在。 这两种存储块类型都包含存储单元阵列和位线读出放大器。 包含在具有冗余单元阵列的块上的位线读出放大器与也包含在该块中的存储单元阵列共享,因此不需要仅用于冗余单元阵列的读出放大器。 尽管每个块都可以包含冗余单元阵列,但通常只使用一个或两个具有冗余单元阵列的块。 在全局行冗余方案中,可以通过使用任何冗余单元阵列中的任何未使用的行来修复任何包含位于任何存储器块中的故障存储器单元的行,并且这样做可以提供修复提供机会的DRAM的最大有效性 最大化产量。