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21. 发明授权

US6100516A Velocity measurement device and laser range finder using a coherent detection 失效
标题翻译：速度测量装置和激光测距仪采用相干检测
公开(公告)号：US6100516A
公开(公告)日：2000-08-08
申请号：US77201
申请日：1999-07-15
申请人： Philippe Nerin , Pascal Besesty , Engin Molva , Germain Chartier
发明人： Philippe Nerin , Pascal Besesty , Engin Molva , Germain Chartier
IPC分类号： G01S7/481 , G01S17/32 , G01S17/58 , H01S3/00 , G01B9/02
CPC分类号： G01S17/58 , G01S7/4812 , G01S17/325 , H01S3/00
摘要： The invention relates to a velocity measurement device of the coherent detection type comprising:an active laser medium (10),an input mirror (M.sub.1) and a first output mirror (M.sub.3) defining, with the laser medium, a first resonant cavity of quality factor Q.sub.max making it possible to emit a laser beam (4),a second output mirror (M.sub.2) defining, with the active laser medium (10) and the input mirror (M.sub.1), a second resonant cavity of quality factor Q.sub.min (
摘要翻译： PCT No.PCT / FR97 / 01822 Sec。 371日期：1999年7月15日 102（e）日期1999年7月15日PCT提交1997年10月13日PCT公布。第WO98 / 16844号公报日期：1998年04月23日本发明涉及一种相干检测型速度测量装置，包括：激光介质（10），输入反射镜（M1）和第一输出镜（M3），其与激光介质质量因子Qmax的第一谐振腔使得可以发射激光束（4），第二输出镜（M2）用激活的激光介质（10）和输入镜（M1）限定出质量的第二谐振腔因子Qmin（

22. 发明授权

US5349596A Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity 失效
标题翻译：不对称半导体异质结激光腔和激光器配有所述腔
公开(公告)号：US5349596A
公开(公告)日：1994-09-20
申请号：US46744
申请日：1993-04-16
申请人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
发明人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
IPC分类号： H01S5/00 , H01S3/0959 , H01S5/02 , H01S5/024 , H01S5/04 , H01S5/042 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/347 , H01S3/18 , H01L21/203
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/04 , H01S5/34 , H01S3/0959 , H01S5/02272 , H01S5/024 , H01S5/02461 , H01S5/041 , H01S5/3213 , H01S5/3409 , H01S5/3426 , H01S5/343 , H01S5/3432 , H01S5/347
摘要： A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.
摘要翻译：公开了一种半导体异质结构激光腔，其具有在衬底上限定四个区的外延半导体层。激光腔包括第一区，其具有从第一面到第二面连续变化的组合，其间隙从第一面向第二面逐渐减小，第一区确保光学限制和光引导。第二区域构成与第一区域的第二面接触的有源发射区，并且具有至少一个具有小于第一区的间隙的量子阱。第三区域的间隙大于至少一个量子阱的间隙。第三区域确保光学限制和光引导，并且具有从第一面到第二面连续变化的组合，其间隙从第一面增加到第二面，第三区的第一面处于与活性排放区接触。第四区域构成接触第三区域的第二面的缓冲区和基板，第四区域用作光导光学屏障，第一和第三区域相对于有源发射区域是不对称的，以限定不对称的 GRINSCH结构，构成用于确保电子激发和形成电子空穴的半导体异质结构的表面的第一和第三区域之一。

23. 发明授权

US5933444A Monolithic semiconductor infrared emitter pumped by a switched solid microlaser 失效
标题翻译：由开关式固体微型激光器泵浦的单片半导体红外发射器
公开(公告)号：US5933444A
公开(公告)日：1999-08-03
申请号：US637277
申请日：1996-04-25
申请人： Engin Molva , Jean-Louis Pautrat
发明人： Engin Molva , Jean-Louis Pautrat
IPC分类号： H01S3/094 , H01S3/06 , H01S3/113 , H01S5/026 , H01S5/04 , H01S5/183 , H01S5/30 , H01S5/32 , H01S3/091
CPC分类号： H01S3/0627 , H01S5/041 , H01S3/0604 , H01S3/0615 , H01S3/09415 , H01S3/113 , H01S5/026 , H01S5/183 , H01S5/30 , H01S5/3222
摘要： The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.
摘要翻译：本发明涉及一种用于红外光发射器的装置，其包括能够发射红外辐射的半导体元件（12）和布置成能够光学泵浦半导体元件的开关微激光器（2,4,6,8）。

24. 发明授权

US5832010A Switched monolithic microlaser and intracavity nonlinear material 失效
标题翻译：开关单片微激光器和腔内非线性材料
公开(公告)号：US5832010A
公开(公告)日：1998-11-03
申请号：US635388
申请日：1996-04-19
申请人： Laurent Fulbert , Engin Molva
发明人： Laurent Fulbert , Engin Molva
IPC分类号： G02F1/37 , H01S3/06 , H01S3/109 , H01S3/113 , H01S3/10
CPC分类号： H01S3/0627 , H01S3/109 , H01S3/113 , H01S3/0604 , H01S3/0615
摘要： A microlaser cavity to a microlaser incorporating an active solid medium (38) and means (44) for switching the cavity, whilst also having, within said cavity, at least one element (46) of an optically nonlinear material, making it possible to multiply the basic frequency of the laser cavity by a factor n (n.gtoreq.2).
摘要翻译：一种微激光器腔，其结合有活性固体介质（38）的微激光器和用于切换空腔的装置（44），同时在所述空腔内还具有光学非线性材料的至少一个元件（46），使得可以激光腔的基本频率由因子n（n> / = 2）。

25. 发明授权

US5125000A Compact electronic pumping-type semiconductor laser 失效
标题翻译：紧凑型电子泵浦型半导体激光器
公开(公告)号：US5125000A
公开(公告)日：1992-06-23
申请号：US680322
申请日：1991-04-04
申请人： Guy Labrunie , Engin Molva
发明人： Guy Labrunie , Engin Molva
IPC分类号： H01S5/00 , H01J1/304 , H01S3/0959 , H01S5/04 , H01S5/20 , H01S5/32
CPC分类号： H01S5/20 , H01J1/3042 , H01S3/0959 , H01S5/04 , H01S5/2004 , H01S5/3211
摘要： A laser having a volume of less than 1 cubic centimeter comprises a semiconductor constructed to permit the emission of a coherent beam of electromagnetic radiation upon the application of an electron beam to one of its surfaces, and an electron bombardment pumping device for applying the electron beam. The electron bombardment device includes at least one microdot emissive cathode cold electron source having a volume less than 1 cm.sup.3. In a preferred embodiment the laser comprises a plurality of electron bombardment devices formed into a matrix or row of microdot cathodes. A focusing device is provided for focusing the electron beams onto a plurality of excitement strips corresponding to a plurality of semiconductors.
摘要翻译：具有小于1立方厘米的体积的激光器包括半导体，被构造成允许在将电子束施加到其表面之一时发射电磁辐射的相干光束;以及电子轰击泵送装置，用于施加电子束。电子轰击装置包括至少一个体积小于1cm 3的微点发射阴极冷电子源。在优选实施例中，激光器包括形成为矩阵或行的微点阴极的多个电子轰击装置。提供聚焦装置用于将电子束聚焦到对应于多个半导体的多个兴奋条上。

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