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    • 25. 发明申请
    • PORTABLE MEMORY PRINTING DEVICE AND METHOD
    • 便携式存储打印设备和方法
    • US20080239364A1
    • 2008-10-02
    • US11693051
    • 2007-03-29
    • David NelsonMithila PatwardhanDavid P. Rich
    • David NelsonMithila PatwardhanDavid P. Rich
    • G06K3/02
    • G06F3/1273G06F3/1222G06F3/1239
    • A method comprises collecting printing information relating to an electronic document stored on a computer. The printing information comprises printing attributes according to which the electronic document should be printed. In response to input from a user of the computer, the method causes the electronic document and the printing information to be stored on a portable memory device temporarily connected to the computer. The method causes the electronic document and the printing attributes to be automatically supplied to a printing device after the portable memory device is disconnected from the computer and subsequently connected to the printing device. The method causes the printing device to print the electronic document with the printing attributes based solely on the electronic document and the printing information maintained within the portable memory device.
    • 一种方法包括收集与存储在计算机上的电子文档有关的打印信息。 打印信息包括打印属性,根据该打印属性应打印电子文档。 响应于来自计算机的用户的输入,该方法使得电子文档和打印信息被存储在临时连接到计算机的便携式存储设备上。 在便携式存储装置与计算机断开连接并随后连接到打印装置之后,该方法使电子文档和打印属性自动提供给打印装置。 该方法使得打印设备仅基于电子文档和保持在便携式存储设备内的打印信息来打印具有打印属性的电子文档。
    • 28. 发明授权
    • Efficient water filters
    • 高效水过滤器
    • US07297263B2
    • 2007-11-20
    • US11461993
    • 2006-08-02
    • David NelsonEdward R. Rinker
    • David NelsonEdward R. Rinker
    • B01D39/16C02F1/28
    • B01J20/28004C02F1/28C02F1/281C02F1/283C02F1/285C02F2307/04C02F2307/06
    • Water treatment devices that include filtration media with specified grain size distributions are provided. In one arrangement, the device contains a volume of grains such that between about 1 and 15 vol % of the grains have a grain size in a range between a first grain size and a second grain size, a first portion of the grains have grain sizes smaller than the first grain size, and a second portion of the grains have grain sizes larger than the second grain size. The first grain size can be between about 50 and 100 μm and the second grain size can be between about 100 and 150 μm. In other arrangements, the first grain size can be between about 70 and 90 μm and the second grain size can be between about 100 and 130 μm. The difference between the first grain size and the second grain size can be at least 20 μm. In other arrangements, the difference between the first grain size and the second grain size can be at least 10 μm.
    • 提供包括具有特定粒度分布的过滤介质的水处理装置。 在一种布置中,该装置包含一定体积的晶粒,使得约1至15体积%的晶粒具有在第一晶粒尺寸和第二晶粒尺寸之间的范围内的晶粒尺寸,晶粒的第一部分具有晶粒尺寸 小于第一晶粒尺寸,并且第二部分晶粒具有大于第二晶粒尺寸的晶粒尺寸。 第一粒度可以在约50-100um之间,第二粒度可以在约100和150μm之间。 在其他布置中,第一粒度可以在约70和90μm之间,第二粒度可以在约100和130μm之间。 第一颗粒尺寸和第二颗粒尺寸之间的差可以至少为20μm。 在其他布置中,第一晶粒尺寸和第二晶粒尺寸之间的差可以至少为10um。
    • 29. 发明申请
    • Method and system for analyzing single event upset in semiconductor devices
    • 用于分析半导体器件中的单事件不正常的方法和系统
    • US20070096754A1
    • 2007-05-03
    • US11265824
    • 2005-11-03
    • Michael JohnsonKeith GolkePamela VogtDavid Nelson
    • Michael JohnsonKeith GolkePamela VogtDavid Nelson
    • G01R31/302
    • G01R31/3181G01R31/31816
    • A simulation model is used to predict a semiconductor device's response to a single event upset. The simulation model is connected to a model of the semiconductor device to be tested. The simulation model switches in an impedance path between a node to be tested in the semiconductor device model and an opposite voltage supply until a predefined amount of charge has been reached via sourcing (for a low to high voltage transition) or sinking (for a high to low voltage transition). When the predefined amount of charge has been reached, the impedance path is switched out. The switching of the impedance path approximates the charge movement that occurs from a heavy ion strike passing through a sensitive volume. By varying the predefined amount of charge, the semiconductor device's susceptibility to SEU can be predicted without having to resort to physical testing.
    • 模拟模型用于预测半导体器件对单个事件不安的响应。 仿真模型连接到要测试的半导体器件的模型。 模拟模型切换半导体器件模型中要测试的节点之间的阻抗路径和相反的电源,直到通过源(达到低电压转换)或下沉(达到高电平)达到预定量的电荷 到低压转换)。 当达到预定量的电荷时,阻抗路径被切断。 阻抗路径的切换近似于通过敏感体积的重离子冲击发生的电荷运动。 通过改变预定量的电荷,可以预测半导体器件对SEU的敏感性,而无需诉诸于物理测试。