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21. 发明授权

US08437231B2 Servo control device and optical disc device 有权
标题翻译：伺服控制装置和光盘装置
公开(公告)号：US08437231B2
公开(公告)日：2013-05-07
申请号：US13533378
申请日：2012-06-26
申请人： Nobuyoshi Kobayashi
发明人： Nobuyoshi Kobayashi
IPC分类号： G11B7/00
CPC分类号： G11B20/10037 , G11B7/0906 , G11B20/10222 , G11B2220/2537
摘要： A servo control device includes a plurality of reproduction channels, a plurality of analog/digital (A/D) converters, a servo error detecting circuit that generates a servo error signal, a servo signal processing device that executes predetermined processing for the servo error signal to generate a control signal, and a sampling frequency converter that converts the sampling frequency between the servo error detecting circuit and the servo signal processing device. A first clock is included as a sampling clock of the A/D converters and a processing clock of the servo error detecting circuit. A second clock is included as a processing clock of the servo signal processing device. The sampling frequency converter converts the sampling frequency by processing the servo error signal by the servo error detecting circuit in synchronization with the first clock and processing the signal processed in synchronization with the first clock in synchronization with the second clock.
摘要翻译：伺服控制装置包括多个再现通道，多个模拟/数字（A / D）转换器，产生伺服误差信号的伺服误差检测电路，对伺服误差信号执行预定处理的伺服信号处理装置以产生控制信号;以及采样频率转换器，其转换伺服误差检测电路和伺服信号处理装置之间的采样频率。作为A / D转换器的采样时钟和伺服误差检测电路的处理时钟，包括第一时钟。作为伺服信号处理装置的处理时钟包括第二时钟。采样频率转换器通过与第一时钟同步地由伺服误差检测电路处理伺服误差信号来转换采样频率，并与第二时钟同步地处理与第一时钟同步处理的信号。

22. 发明授权

US08241991B2 Method for forming interconnect structure having airgap 有权
标题翻译：形成具有气隙的互连结构的方法
公开(公告)号：US08241991B2
公开(公告)日：2012-08-14
申请号：US12718731
申请日：2010-03-05
申请人： Julian J. Hsieh , Nobuyoshi Kobayashi , Akira Shimizu , Kiyohiro Matsushita , Atsuki Fukazawa
发明人： Julian J. Hsieh , Nobuyoshi Kobayashi , Akira Shimizu , Kiyohiro Matsushita , Atsuki Fukazawa
IPC分类号： H01L21/76
CPC分类号： H01L21/768
摘要： A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.
摘要翻译：一种用气隙形成互连结构的方法，包括：提供在衬底上形成沟槽的结构; 通过等离子体增强的原子层沉积在沟槽的侧壁上沉积间隔氧化物层作为侧壁间隔物; 用铜填充具有侧壁间隔物的沟槽; 去除侧壁间隔件以形成气隙结构; 并且封装气隙结构，其中在填充的铜和沟槽的侧壁之间形成气隙。

23. 发明申请

US20110216637A1 METHOD OF, AND APPARATUS FOR, RECORDING ADDRESS INFORMATION TO DISC MEDIUM 失效
标题翻译：用于记录DISC介质的地址信息的方法和装置
公开(公告)号：US20110216637A1
公开(公告)日：2011-09-08
申请号：US13109466
申请日：2011-05-17
申请人： Shoei KOBAYASHI , Nobuyoshi Kobayashi , Tamotsu Yamagami , Shinichiro Iimura
发明人： Shoei KOBAYASHI , Nobuyoshi Kobayashi , Tamotsu Yamagami , Shinichiro Iimura
IPC分类号： G11B7/085
CPC分类号： G11B27/24 , G11B7/0053 , G11B7/24082 , G11B20/1833 , G11B27/19
摘要： In step S1, the address generator generates address information composed of a sync signal which is recorded on an optical disc, address data and an error correction code for the address data, pre-encodes and supplies it to a modulator. At the same time, a carrier signal generator generates a carrier signal which is to carry the address information, and supplies it to the modulator. In step S2, the modulator makes MSK modulation of the carrier signal supplied from the carrier signal generator on the basis of the pre-encoded address information supplied from the address generator, and supplies a resultant MSK modulation signal to a wobbling unit. In step S3, the wobbling unit forms, on the optical disc, a spiral groove wobbled adaptively to the MSK modulation signal supplied from the modulator. In this optical disc, a given address can be accessed quickly and accurately.
摘要翻译：在步骤S1中，地址发生器产生由记录在光盘上的同步信号，地址数据和地址数据的纠错码组成的地址信息，并对其进行编码并将其提供给调制器。同时，载波信号发生器产生携带地址信息的载波信号，并将其提供给调制器。在步骤S2中，调制器根据从地址发生器提供的预先编码的地址信息，对从载波信号发生器提供的载波信号进行MSK调制，并将得到的MSK调制信号提供给摆动单元。在步骤S3中，摆动单元在光盘上形成自适应于从调制器提供的MSK调制信号摆动的螺旋槽。在该光盘中，可以快速准确地访问给定的地址。

24. 发明申请

US20100208560A1 Optical disk playback apparatus and optical disk recording/playback apparatus 失效
标题翻译：光盘播放装置和光盘记录/重放装置
公开(公告)号：US20100208560A1
公开(公告)日：2010-08-19
申请号：US12654855
申请日：2010-01-06
申请人： Nobuyoshi Kobayashi
发明人： Nobuyoshi Kobayashi
IPC分类号： G11B15/52
CPC分类号： G11B20/10009 , G11B7/1263 , G11B20/10027 , G11B20/10037 , G11B20/10046 , G11B20/10203 , G11B2220/2537
摘要： Disclosed herein is an optical disk playback apparatus including: a signal playback device configured to read and decode information recorded to an optical disk through an optical pickup unit in order to reproduce the information; the signal playback device including a signal generation circuit, a first signal processing device, a second signal processing device, a modulator, a switch, an analog to digital converter, and a third signal processing device.
摘要翻译：这里公开了一种光盘播放装置，包括：信号重放装置，被配置为通过光学拾取单元读取和解码记录到光盘的信息，以便再现信息; 信号重放装置包括信号产生电路，第一信号处理装置，第二信号处理装置，调制器，开关，模数转换器和第三信号处理装置。

25. 发明申请

US20100124621A1 Method of Forming Insulation Film by Modified PEALD 审中-公开
标题翻译：通过改性PEALD形成绝缘膜的方法
公开(公告)号：US20100124621A1
公开(公告)日：2010-05-20
申请号：US12618355
申请日：2009-11-13
申请人： Akiko Kobayashi , Akira Shimizu , Nobuyoshi Kobayashi , Woo-Jin Lee
发明人： Akiko Kobayashi , Akira Shimizu , Nobuyoshi Kobayashi , Woo-Jin Lee
IPC分类号： C23C16/48
CPC分类号： C23C16/402 , C23C16/325 , C23C16/345 , C23C16/45542 , C23C16/45553 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.
摘要翻译：一种通过交替多次交替形成绝缘膜的方法，将前体吸附到基底上的方法和使用反应气体和等离子体处理吸附表面的方法，其中在提供前体的过程中施加等离子体。

26. 发明授权

US06627497B2 Semiconductor integrated circuit device and method of manufacturing the same 失效
公开(公告)号：US06627497B2
公开(公告)日：2003-09-30
申请号：US10162192
申请日：2002-06-05
申请人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
发明人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
IPC分类号： H01L218242
CPC分类号： H01L21/31604 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/56 , H01L28/60 , H01L28/65
摘要： A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

27. 发明授权

US06340632B1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06340632B1
公开(公告)日：2002-01-22
申请号：US09585629
申请日：2000-06-02
申请人： Shinichi Fukada , Kazuo Nojiri , Takashi Yunogami , Shoji Hotta , Hideo Aoki , Takayuki Oshima , Nobuyoshi Kobayashi
发明人： Shinichi Fukada , Kazuo Nojiri , Takashi Yunogami , Shoji Hotta , Hideo Aoki , Takayuki Oshima , Nobuyoshi Kobayashi
IPC分类号： H01L214763
CPC分类号： H01L21/76874 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76843 , H01L21/76873 , H01L23/53238 , H01L2221/1036 , H01L2924/0002 , H01L2924/00
摘要： Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.
摘要翻译：绝缘膜34至38（其绝缘膜34,36,38是氮化硅膜和绝缘膜35,38是氧化硅膜）依次形成在第四布线层的布线33上，并将凹槽图案40转移到绝缘膜38。形成防反射膜41以填充绝缘膜38的槽40，然后形成承载孔图案43的抗蚀剂膜42。在存在抗蚀剂膜42的情况下对膜进行蚀刻操作，以将孔图案转印到绝缘膜38,37,36和绝缘膜35的一部分中。随后，将抗蚀剂膜42和抗反射膜 41，并且通过使用绝缘膜38作为掩模将槽图案40和孔图案43分别转印到绝缘膜37和绝缘膜35中。

28. 发明授权

US5194939A Digital video signal processing apparatus for data rate down-conversion with half-band filtering 失效
标题翻译：数字视频信号处理设备，用于带宽滤波器的数据速率下变频
公开(公告)号：US5194939A
公开(公告)日：1993-03-16
申请号：US796378
申请日：1991-11-22
申请人： Nobuyoshi Kobayashi , Hisanori Kominami
发明人： Nobuyoshi Kobayashi , Hisanori Kominami
IPC分类号： H04N5/92 , H03H17/06 , H04N5/14 , H04N9/804 , H04N9/808 , H04N19/00 , H04N19/423 , H04N19/59 , H04N19/80
CPC分类号： H03H17/06 , H04N9/8042
摘要： A digital video signal processing apparatus for reducing the data rate of, and interpolating digital, video signals of a component format. The apparatus comprises a half-band high pass filter having a coefficient profile equivalent to that obtained by setting a center coefficient of an odd-order half-band low pass filter to zero, or a notch filter having a coefficient profile equivalent to that obtained by eliminating a center coefficient and even-numbered coefficients of such a low pass filter, and a delay line for giving a predetermined delay time to the signal supplied thereto, whereby the data rate of multiplexed or time-divided signals can be reduced, or the signals interpolated, in a relatively simple design employing a single digital filter.

29. 发明授权

US5013526A Superconducting alloys comprising tungsten, molybdenum, silicon and oxygen 失效
标题翻译：包含钨，钼，硅和氧的超导合金
公开(公告)号：US5013526A
公开(公告)日：1991-05-07
申请号：US438596
申请日：1989-11-17
申请人： Nobuyoshi Kobayashi , Masayuki Suzuki , Seiichi Kondo , Makoto Matsui , Kiichiro Mukai
发明人： Nobuyoshi Kobayashi , Masayuki Suzuki , Seiichi Kondo , Makoto Matsui , Kiichiro Mukai
IPC分类号： C23C14/14 , C23C16/06 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L39/06 , H01L39/12
CPC分类号： H01L23/53285 , H01L39/12 , H01L2924/0002 , Y10S420/901 , Y10T428/12528 , Y10T428/12806
摘要： A superconducting material made of tungsten or molybdenum containing a specified amount of silicon, a wiring made of this superconducting material, and a semiconductor device using this wiring.The above-mentioned superconducting material undegoes no damage even in the steps of heat treatments effected after the formation of a wiring therefrom by virtue of its high melting point, and can be very easily patterned by reactive ion etching using SF.sub.6 as an etching gas, which has heretofore been generally employed. These features, in which conventional superconducting materials are lacking, allow the superconducting material of the present invention to exhibit excellent properties particularly when used in the wirings of a semiconductor device.

30. 发明授权

US10378106B2 Method of forming insulation film by modified PEALD 有权
公开(公告)号：US10378106B2
公开(公告)日：2019-08-13
申请号：US12618355
申请日：2009-11-13
申请人： Akiko Kobayashi , Akira Shimizu , Nobuyoshi Kobayashi , Woo-Jin Lee
发明人： Akiko Kobayashi , Akira Shimizu , Nobuyoshi Kobayashi , Woo-Jin Lee
IPC分类号： C23C16/32 , C23C16/34 , C23C16/40 , H01L21/02 , C23C16/455 , H05H1/24
摘要： A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

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