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21. 发明申请

US20140057417A1 Method for Producing an Optoelectronic Semiconductor Chip 审中-公开
标题翻译：制造光电半导体芯片的方法
公开(公告)号：US20140057417A1
公开(公告)日：2014-02-27
申请号：US14002968
申请日：2012-02-15
申请人： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
发明人： Christian Leirer , Anton Vogl , Andreas Biebersdorf , Joachim Hertkorn , Tetsuya Taki , Rainer Butendeich
IPC分类号： H01L21/02 , H01L33/00 , H01L31/18
CPC分类号： H01L21/02513 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/03044 , H01L31/03529 , H01L31/1856 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L33/24
摘要： A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner.
摘要翻译：公开了一种制造光电半导体芯片的方法。在外延装置中提供生长衬底。通过在生长衬底上的外延沉积至少一个中间层。在远离生长衬底的中间层的侧面上产生面向生长衬底的结构化表面。活性层通过外延沉积在结构化表面上。结构化表面在外延装置中产生，并且活性层至少在一些区域中以保形方式或至少在某些部分基本上以共形方式结构化结构化表面。

22. 发明授权

US08592840B2 Optoelectronic semiconductor chip and use of an intermediate layer based on AlGaN 有权
标题翻译：光电子半导体芯片和基于AlGaN的中间层的使用
公开(公告)号：US08592840B2
公开(公告)日：2013-11-26
申请号：US13519345
申请日：2010-12-20
申请人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
发明人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0
摘要翻译：光电半导体芯片包括基于GaN，InGaN，AlGaN和/或InAlGaN的外延生长的半导体层序列，p掺杂层序列，n掺杂层序列，产生电磁辐射并位于 p掺杂层序列和n掺杂层序列，以及至少一个Al x Ga 1-x N基中间层，其中0≤x≤1，其位于与n掺杂层序列相同的有源区的一侧。

23. 发明申请

US20120319126A1 Optoelectronic Semiconductor Chip and Method for Fabrication Thereof 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US20120319126A1
公开(公告)日：2012-12-20
申请号：US13516676
申请日：2010-12-23
申请人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L33/32 , H01L33/08
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region the first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
摘要翻译：光电子半导体芯片具有包括多个微二极管的第一半导体层序列，以及第二半导体层序列，其包含第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料的有源区，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管为有源区形成ESD保护。

24. 发明申请

US20120313138A1 OPTOELECTRONIC SEMICONDUCTOR CHIP AND USE OF AN INTERMEDIATE LAYER BASED ON AlGaN 有权
标题翻译：光电半导体芯片和基于AlGaN的中间层的使用
公开(公告)号：US20120313138A1
公开(公告)日：2012-12-13
申请号：US13519345
申请日：2010-12-20
申请人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
发明人： Matthias Peter , Tobias Meyer , Nikolaus Gmeinwieser , Tetsuya Taki , Hans-Jürgen Lugauer , Alexander Walter
IPC分类号： H01L33/02
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa 1-xN-based intermediate layer where 0
摘要翻译：光电半导体芯片包括基于GaN，InGaN，AlGaN和/或InAlGaN的外延生长的半导体层序列，p掺杂层序列，n掺杂层序列，产生电磁辐射并位于 p掺杂层序列和n掺杂层序列，以及至少一个Al x Ga 1-x N基中间层，其中位于与n掺杂层序列相同的一侧的有源区，其中0

25. 发明申请

US20120298951A1 Optoelectronic Semiconductor Body with a Quantum Well Structure 审中-公开
标题翻译：具有量子阱结构的光电子体
公开(公告)号：US20120298951A1
公开(公告)日：2012-11-29
申请号：US13386861
申请日：2010-07-22
申请人： Tobias Meyer , Matthias Peter , Rainer Butendeich , Tetsuya Taki , Juergen Off , Alexander Walter
发明人： Tobias Meyer , Matthias Peter , Rainer Butendeich , Tetsuya Taki , Juergen Off , Alexander Walter
IPC分类号： H01L33/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/305 , H01S5/3063 , H01S5/3213 , H01S5/3215 , H01S5/34 , H01S5/347
摘要： An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5). The quantum well structure consists of following elements: one single quantum well layer 31 or a layer stack (3), which consists of a plurality of quantum well layers (31) and at least one barrier layer (32), one barrier layer (32) being arranged between each pair of successive quantum wall layers (31), which barrier layer adjoins both quantum wall layers (31); an n-side terminating layer (2), which adjoins the n-conducting layer (1) and the single quantum well layer (31) or the layer stack (3); and a p-side terminating layer (4), which is arranged between the p-conducting layer (5) and the single quantum well layer (31) or the layer stack (3) and adjoins the layer stack (3) or the single quantum well layer (31).
摘要翻译：提供了一种光电半导体体，其包含由第一组分和与第一组分不同的第二组分组成的半导体材料。半导体本体包括量子阱结构，其布置在n导电层（1）和p导电层（5）之间。量子阱结构由以下元件组成：由多个量子阱层（31）和至少一个阻挡层（32），一个势垒层（32）和一个势垒层（32）构成的单个量子阱层31或层堆叠）布置在每对连续的量子壁层（31）之间，该阻挡层邻接量子壁层（31）; 邻接n导电层（1）和单量子阱层（31）或层叠体（3）的n侧端接层（2）; 和p侧端接层（4），其布置在导电层（5）和单量子阱层（31）或层堆叠（3）之间并且邻接层堆叠（3）或单层量子阱层（31）。

26. 发明授权

US07244957B2 Group III nitride compound semiconductor light-emitting device and method for producing the same 有权
标题翻译： III族氮化物化合物半导体发光器件及其制造方法
公开(公告)号：US07244957B2
公开(公告)日：2007-07-17
申请号：US11063747
申请日：2005-02-24
申请人： Naoki Nakajo , Masao Kamiya , Tetsuya Taki
发明人： Naoki Nakajo , Masao Kamiya , Tetsuya Taki
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/32
摘要： In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3 and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.
摘要翻译：在从具有Mg掺杂的Mg掺杂的p型GaN制成的III族氮化物化合物半导体投影部150的半导体平面的高度为1.5μm的III族氮化物化合物半导体发光装置中， 8×10 9 / cm 3，并且通过选择性生长形成，形成在p型接触层（第二p层）108上。并且通过金属沉积在其上形成透光性电极110。 III族氮化物化合物半导体投影部150形成用于输出光的坚固的表面，并且实际临界角被加宽，这能够提高发光效率。并且由于不采用蚀刻来形成耐磨性，所以驱动电压不增加。

27. 发明申请

US20060097283A1 Group III-nitride-based compound semiconductor device 审中-公开
标题翻译： III族氮化物系化合物半导体器件
公开(公告)号：US20060097283A1
公开(公告)日：2006-05-11
申请号：US10542780
申请日：2004-09-01
申请人： Tetsuya Taki
发明人： Tetsuya Taki
IPC分类号： H01L31/109
CPC分类号： H01L33/32 , H01L33/02 , H01L33/14
摘要： In a group III-nitride-based compound semiconductor device 100, an intermediate layer 108 is 5 provided between a p-AlGaN layer 107 and a p-GaN layer 109, to each of which an acceptor impurity is added. On this occasion, the intermediate layer 108 is doped with a donor impurity in a concentration, by which holes generated by an acceptor impurity introduced into the intermediate layer 108 during the formation of the p-AlGaN layer 107 are substantially compensated. As a result, the conductivity of the intermediate layer 108 becomes extremely low, and therefore the electrostatic withstand voltage of the group III-nitride-based compound semiconductor device 100 improves significantly.
摘要翻译：在III族氮化物类化合物半导体器件100中，在p-AlGaN层107和p-GaN层109之间设置有中间层108，其中添加有受主杂质。在这种情况下，中间层108被掺杂有施主杂质，其浓度通过在形成p-AlGaN层107期间由引入到中间层108中的受主杂质产生的空穴被基本上补偿。结果，中间层108的导电性变得非常低，因此III族氮化物系化合物半导体器件100的静电耐受电压显着提高。

28. 发明授权

US6118485A Card type camera with image processing function 失效
标题翻译：具有图像处理功能的卡式相机
公开(公告)号：US6118485A
公开(公告)日：2000-09-12
申请号：US976581
申请日：1997-11-24
申请人： Sadahiko Hinoue , Tetsuya Taki , Masako Nakanishi , Hiroyoshi Toda , Toyofumi Horikawa
发明人： Sadahiko Hinoue , Tetsuya Taki , Masako Nakanishi , Hiroyoshi Toda , Toyofumi Horikawa
IPC分类号： G06F3/00 , H04N1/00 , H04N1/21 , H04N5/225 , H04N5/232
CPC分类号： G06F1/1632 , G06F3/005 , H04N1/00129 , H04N1/2112 , H04N1/2137 , H04N5/2251 , H04N5/232 , H04N1/00204 , H04N2101/00 , H04N2201/0051 , H04N2201/0077
摘要： An IC card unit has a memory, various types of image processing sections, and an IC card interface and, when fitted to an external information processing device, it is contained therein. An image input unit, which has an image forming part and an image pick-up part and which is protruded outward of the information processing device, captures an image of a subject. The image processing sections execute image processing on image data written into the memory, and converts the data into image data optimum for display by an image display of the information processing device. The IC card interface transmits image data that has undergone the image processing to the information processing device side, enabling real-time monitoring. Access from the information processing device side is enabled so that image processing conditions and the like can be set.
摘要翻译： IC卡单元具有存储器，各种类型的图像处理部分和IC卡接口，并且当装配到外部信息处理装置时，它被包含在其中。具有图像形成部分和图像拾取部分并且在信息处理装置的外部突出的图像输入单元捕获被摄体的图像。图像处理部对写入存储器的图像数据执行图像处理，并且通过信息处理装置的图像显示将数据转换为最佳的图像数据以供显示。 IC卡接口将经过图像处理的图像数据发送到信息处理装置侧，实现实时监视。能够从信息处理装置侧进行访问，能够设定图像处理条件等。

29. 发明授权

US6099627A Dispersion ink 失效
标题翻译：分散油墨
公开(公告)号：US6099627A
公开(公告)日：2000-08-08
申请号：US123577
申请日：1998-07-28
申请人： Shoji Saibara , Shigeo Aoyama , Tetsuya Taki
发明人： Shoji Saibara , Shigeo Aoyama , Tetsuya Taki
IPC分类号： C09D11/00 , C09D11/02
CPC分类号： C09D11/326
摘要： The present invention provides a dispersion ink excellent not only high-definition print quality but also re-dispersibility. More particularly, the present invention provides a dispersion ink comprising at least a pigment or a disperse dye, which has a particle diameter of 75 nm or less, an amphiphilic compound, and water, said amphiphilic compound having a hydrophilic portion composed of a poly(ethylene oxide) and a hydrophobic portion composed of an alkyl group and/or an aromatic group and bonded to the hydrophilic portion, said amphiphilic compound containing at least one ionic group at the end of the poly(ethylene oxide) constituting the hydrophilic portion which is not bonded to the hydrophobic portion, and the whole amphiphilic compound having a molecular weight of 5,000 or less, wherein between the particle diameter of said pigment or said disperse dye and the molecular weight of said amphiphilic compound, there is the relationship represented by the following expression (1):0.004.ltoreq.(the particle diameter (nm) of the pigment or the disperse dye)/(the molecular weight of the amphiphilic compound).ltoreq.0.04. (1)
摘要翻译：本发明提供一种不仅具有高清晰度打印质量而且再分散性优异的分散油墨。更具体地说，本发明提供一种分散油墨，其至少含有粒径为75nm以下的颜料或分散染料，两亲性化合物和水，所述两亲性化合物具有由聚（环氧乙烷）和由烷基和/或芳族基团组成并与亲水部分结合的疏水部分，所述两亲化合物在构成亲水部分的聚（环氧乙烷）末端含有至少一个离子基团，其为不与疏水部分结合的整体两亲性化合物和分子量为5,000以下的整体两亲性化合物，其中在所述颜料或所述分散染料的粒径与所述两亲性化合物的分子量之间存在以下关系：表达式（1）：0.004

30. 发明授权

US09337388B2 Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component 有权
标题翻译：用于制造半导体层序列的方法，辐射发射半导体芯片和光电子部件
公开(公告)号：US09337388B2
公开(公告)日：2016-05-10
申请号：US13878212
申请日：2011-09-30
申请人： Joachim Hertkorn , Tetsuya Taki , Jürgen Off
发明人： Joachim Hertkorn , Tetsuya Taki , Jürgen Off
IPC分类号： H01L21/00 , H01L33/24 , H01L33/22 , H01L33/00 , H01L33/16
CPC分类号： H01L33/24 , H01L33/007 , H01L33/0079 , H01L33/16 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A method can be used for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.
摘要翻译：一种方法可以用于制造基于氮化物化合物半导体材料并且包括微结构化外表面的半导体层序列。该方法具有以下步骤：A）在衬底上生长半导体层序列的至少一个第一半导体层; B）在第一半导体层上施加耐蚀刻层; C）在步骤B）中获得的层序列上生长至少一个另外的半导体层; D）从衬底分离半导体层序列，至少部分地去除半导体层序列的分离区; E）通过蚀刻装置蚀刻所获得的半导体层序列的分离表面，使得进行第一半导体层的微结构化并形成微结构化的外表面。

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