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21. 发明授权

US06836668B1 Portable communication apparatus with voice/character conversion direction switch 失效
标题翻译：带语音/字符转换方向开关的便携式通讯设备
公开(公告)号：US06836668B1
公开(公告)日：2004-12-28
申请号：US09654535
申请日：2000-09-01
申请人： Motoo Nakano
发明人： Motoo Nakano
IPC分类号： H04M100
CPC分类号： H04M1/7255 , H04M1/271 , H04M1/72552 , H04M2250/70
摘要： A portable communication apparatus allowing increased flexibility and convenience is disclosed. A switch is provided to select one of a voice-character conversion communication mode and a character-voice conversion communication mode depending on a setting instruction. A voice-character converter performs a selected one of a first conversion from voice to character data and a second conversion from character to voice data according to the selected communication mode.
摘要翻译：公开了一种允许增加灵活性和便利性的便携式通信设备。提供开关以根据设置指令选择语音 - 字符转换通信模式和字符 - 语音转换通信模式之一。语音字符转换器根据所选择的通信模式执行从语音到字符数据的第一转换中的一个以及从字符到语音数据的第二转换。

22. 发明授权

US06639941B1 Radio-signal transceiver 有权
标题翻译：无线电信号收发器
公开(公告)号：US06639941B1
公开(公告)日：2003-10-28
申请号：US09454410
申请日：1999-12-03
申请人： Motoo Nakano
发明人： Motoo Nakano
IPC分类号： H04B138
CPC分类号： H04W88/023 , H04W88/022
摘要： There is provided a radio-signal transceiver including an antenna, a radio-signal receiver receiving a message having been received through the antenna, addressed to a calling number of the radio-signal transmitter, a main controller controlling an operation of the radio-signal receiver, an interface through which a command is input into the radio-signal receiver, an auxiliary controller analyzing the command and transmitting a signal indicative of an operation represented by the command, to the main controller, a display screen displaying the message, and a message analyzer analyzing the message and extracting data to be registered, the auxiliary controller making judgement as to whether a received message is able to be registered, based on analysis made by the message analyzer, and registering a received message automatically or manually, if a received message is judged to be able to be registered. The radio-signal transceiver makes it possible for a base station as a radio-signal transmitter to register various data in the radio-signal transceiver, which ensures simplification in input operation to be carried out by an operator.
摘要翻译：提供了一种无线电信号收发器，包括天线，接收已经通过天线接收的消息的无线电信号接收器，寻址到无线电信号发射机的主叫号码，控制无线电信号的操作的主控制器接收器，将命令输入到无线电信号接收器中的接口，分析命令并将指示由命令表示的操作的信号发送到主控制器的辅助控制器，显示消息的显示屏幕，以及消息分析器分析消息并提取要注册的数据，辅助控制器基于消息分析器进行的分析来判断接收到的消息是否能够被注册，并且如果接收到的，则自动或手动地注册接收到的消息消息被判断为能够被注册。无线电信号收发器使得作为无线电信号发射机的基站可以在无线电信号收发器中注册各种数据，这确保操作者执行的输入操作的简化。

23. 发明授权

US5648676A Semiconductor device with protective element 失效
标题翻译：具有保护元件的半导体器件
公开(公告)号：US5648676A
公开(公告)日：1997-07-15
申请号：US591955
申请日：1996-01-23
申请人： Takashi Iwai , Motoo Nakano
发明人： Takashi Iwai , Motoo Nakano
IPC分类号： H01L27/02 , H01L29/00
CPC分类号： H01L27/0248
摘要： A semiconductor device has a first-conduction-type semiconductor substrate (19), an internal circuit including a vertical bipolar transistor (18) formed in a second-conduction-type semiconductor layer (20), and a protective element (14). The protective element comprises a first-conduction-type diffusion layer (22a) formed at an upper part of a second-conduction-type semiconductor layer (20a) disposed on the semiconductor substrate (19), and a second-conduction-type diffusion layer (27, 30) formed in the first-conduction-type diffusion layer (22a). The diffusion layer (27, 30) is at least partly deeper than an emitter diffusion layer (23) of the vertical bipolar transistor (18).
摘要翻译：半导体器件具有第一导电型半导体衬底（19），包括形成在第二导电型半导体层（20）中的垂直双极晶体管（18）的内部电路和保护元件（14）。保护元件包括形成在设置在半导体衬底（19）上的第二导电型半导体层（20a）的上部的第一导电型扩散层（22a）和第二导电型扩散层（27,30）形成在第一导电型扩散层（22a）中。扩散层（27,30）至少部分地比垂直双极晶体管（18）的发射极扩散层（23）更深。

24. 发明授权

US5331180A Porous semiconductor light emitting device 失效
标题翻译：多孔半导体发光器件
公开(公告)号：US5331180A
公开(公告)日：1994-07-19
申请号：US53562
申请日：1993-04-28
申请人： Masao Yamada , Motoo Nakano , George J. Collins , Tetsuro Tamura , Akira Takazawa
发明人： Masao Yamada , Motoo Nakano , George J. Collins , Tetsuro Tamura , Akira Takazawa
IPC分类号： H01L21/04 , H01L21/306 , H01L33/34 , H01L33/00
CPC分类号： H01L33/346 , B82Y10/00 , H01L21/0445 , H01L21/306 , H01L33/34 , Y10S438/911 , Y10S438/96 , Y10S438/962
摘要： An Si or SiC semiconductor layer is subjected to anodic oxidization in an HF solution to form a porous semiconductor layer. Without drying the porous semiconductor layer, it is then dipped in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
摘要翻译： Si或SiC半导体层在HF溶液中进行阳极氧化以形成多孔半导体层。不干燥多孔半导体层，然后将其浸入纯水中。施加到纯水的超声波缩短了反应时间并帮助气泡与多孔区域的表面分离。多孔半导体层用于形成pn结，载流子注入到pn结中。

25. 发明授权

US4841349A Semiconductor photodetector device with light responsive PN junction gate 失效
标题翻译：具有光响应PN结门的半导体光电探测器
公开(公告)号：US4841349A
公开(公告)日：1989-06-20
申请号：US113324
申请日：1987-10-28
申请人： Motoo Nakano
发明人： Motoo Nakano
IPC分类号： H01L27/146 , H01L31/10 , H01L31/113 , H04N5/335 , H04N5/347 , H04N5/353 , H04N5/357 , H04N5/369 , H04N5/374
CPC分类号： H01L31/1136
摘要： A semiconductor photodetector device comprises an insulating gate field effect transistor having a gate in which a PN junction (J) is formed on an insulating layer. The gate is formed of a gate electrode (14) of P.sup.+ -type single crystalline silicon and a gate extension portion (17) of N.sup.+ -type single crystalline silicon. Electric charges generated by a light falling on an area including the PN junction are accummulated in the gate electrode (14). A signal of the accumulated electric charge is amplified by the transistor to obtain an output signal (V.sub.out) for detection.
摘要翻译：半导体光检测器件包括具有栅极的绝缘栅场效应晶体管，其中PN结（J）形成在绝缘层上。栅极由P +型单晶硅的栅电极（14）和N +型单晶硅的栅延伸部分（17）形成。由栅极电极（14）累积由落在包含PN结的区域上的光产生的电荷。累积电荷的信号被晶体管放大，以获得用于检测的输出信号（Vout）。

26. 发明授权

US4806769A Disk exchangeable target mechanism with effective cooling means, for ion implantation system 失效
标题翻译：具有有效冷却手段的磁盘可更换目标机构，用于离子注入系统
公开(公告)号：US4806769A
公开(公告)日：1989-02-21
申请号：US51397
申请日：1987-05-19
申请人： Haruhisa Mori , Motoo Nakano
发明人： Haruhisa Mori , Motoo Nakano
IPC分类号： H01L21/265 , H01J37/317 , G21K5/08
CPC分类号： H01J37/3171
摘要： An improved disk exchangeable target mechanism for an ion implantation system includes an effective cooling means for preventing thermal damage to a resist and for improving an implantation quality of semiconductor wafers. The target mechanism includes a metal disk on which a semiconductor wafer(s) to be ion-implanted are mounted on a first face thereof, a support including a metal base having the target disk mounted thereon, and a shaft incorporated with the base, and a medium, provided between a second face of the target disk opposite to the first face and the base, for thermally contact therebetween. Preferably, the base of the support is provided with a cavity and the shaft is provided with holes communicating with the cavity, whereby a cooling medium is inserted into the cavity through one hole and is drained from the cavity through another hole. Furthermore, preferably, the target disk is provided with a thermal transportation unit, such as heat pipes, for transporting thermal energy from a portion(s) at which a high temperature is caused by ion implantation energy, to another portion(s) at which the temperature is low.
摘要翻译：用于离子注入系统的改进的盘可更换靶机构包括有效的冷却装置，用于防止对抗蚀剂的热损伤并改善半导体晶片的植入质量。目标机构包括在其第一面上安装有被离子注入的半导体晶片的金属盘，包括安装有目标盘的金属基座的支撑体和与基座结合的轴，以及介质，设置在与第一面相对的目标盘的第二面与基座之间，用于与它们之间的热接触。优选地，支撑件的基部设置有空腔，并且轴设置有与空腔连通的孔，由此冷却介质通过一个孔插入空腔中，并且通过另一个孔从空腔排出。此外，优选地，目标盘设置有热传递单元，例如热管，用于将热能从由离子注入能量引起高温的部分传送到另一部分，其中温度低。

27. 发明授权

US4503315A Semiconductor device with fuse 失效
标题翻译：带保险丝的半导体器件
公开(公告)号：US4503315A
公开(公告)日：1985-03-05
申请号：US453099
申请日：1982-12-27
申请人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
发明人： Hajime Kamioka , Mikio Takagi , Noriaki Sato , Motoo Nakano , Takashi Iwai
IPC分类号： G11C17/06 , G11C17/14 , H01L21/82 , H01L23/525 , H01L27/10 , H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002
摘要： A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.
摘要翻译：一种具有熔丝的半导体器件，包括具有至少一个台阶的绝缘层。绝缘层上的可熔薄膜穿过该步骤，并且在可熔膜，台阶和绝缘层上形成覆盖膜。当穿过该台阶的可熔膜的部分被激光束照射时，绝缘层上表面上的可熔膜的部分熔化并流到绝缘层的下表面，而不形成孔，从而将可熔体电影在一步。

28. 发明授权

US4461072A Method for preparing an insulated gate field effect transistor 失效
标题翻译：绝缘栅场效应晶体管的制备方法
公开(公告)号：US4461072A
公开(公告)日：1984-07-24
申请号：US483701
申请日：1983-05-20
申请人： Kunihiko Wada , Motoo Nakano
发明人： Kunihiko Wada , Motoo Nakano
IPC分类号： H01L21/205 , H01L21/762 , H01L29/04 , H01L29/78 , H01L29/786 , H01L21/265
CPC分类号： H01L29/78 , H01L21/76216 , H01L29/045 , Y10S438/973
摘要： Disclosed here is an IGFET formed on the single crystal silicon substrate where the major plane surface is deviated within the range from 22 degree to 34 degree toward the crystallographic surface {1,1,1} from {1,0,0} or on the silicon epitaxial layer formed on said substrate. Here, generation of silicon nitride is suppressed, which is newly formed under the mask in the selective oxidation process using the silicon nitride as the mask and also is the main cause of lowering the breakdown voltage of the gate insulating film. In addition, various kinds of functional characteristics depending on the crystallographic surface orientation are not interfered at all. Thereby, the present invention can offer an IGFET which drastically improved the breakdown voltage failure rate of the gate insulating film while keeping the functional characteristics at the best condition.

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