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21. 发明申请

US20050040409A1 Semiconductor light emitting device and its manufacturing method 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050040409A1
公开(公告)日：2005-02-24
申请号：US10932697
申请日：2004-09-02
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.
摘要翻译：在使用氮化物III-V族化合物半导体的半导体激光器等半导体发光装置中，在n侧包覆层和p侧覆层之间具有活性层的结构，p侧包覆层由未掺杂或n型第一层9和p型第二层12，其从有源层更接近地远离沉积。第一层9不比50nm薄。 p型第二层12包括其中插入较大带隙的p型第三层作为电子阻挡层。因此，为了确保良好的光学性能，半导体发光器件的操作电压降低，同时保持p侧覆层的厚度。

22. 发明授权

US06995406B2 Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device 失效
标题翻译：多光束半导体激光器，半导体发光器件和半导体器件
公开(公告)号：US06995406B2
公开(公告)日：2006-02-07
申请号：US10486050
申请日：2003-06-06
申请人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
发明人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/02276 , H01S5/042 , H01S5/0421 , H01S5/0425 , H01S5/34333 , H01S5/4031
摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
摘要翻译：在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

23. 发明授权

US07125732B2 Semiconductor light emitting device and its manufacturing method 有权
公开(公告)号：US07125732B2
公开(公告)日：2006-10-24
申请号：US10930009
申请日：2004-08-30
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

24. 发明授权

US06870193B2 Semiconductor light emitting device and its manufacturing method 有权
公开(公告)号：US06870193B2
公开(公告)日：2005-03-22
申请号：US10349609
申请日：2003-01-23
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01L27/15
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

25. 发明申请

US20050023541A1 Semiconductor light emitting device and its manufacturing method 有权
公开(公告)号：US20050023541A1
公开(公告)日：2005-02-03
申请号：US10930009
申请日：2004-08-30
申请人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/02 , H01L33/04 , H01S5/0213 , H01S5/2004 , H01S5/3216 , H01S5/34333
摘要： In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

26. 发明授权

US06991952B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06991952B2
公开(公告)日：2006-01-31
申请号：US10613624
申请日：2003-07-03
申请人： Takashi Mizuno , Motonobu Takeya , Takeharu Asano , Masao Ikeda
发明人： Takashi Mizuno , Motonobu Takeya , Takeharu Asano , Masao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01S5/0224 , H01S5/0021 , H01S5/02212 , H01S5/02224 , H01S5/02272 , H01S5/32341
摘要： Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.
摘要翻译：提供一种制造半导体器件的方法，其适于防止材料沉积在激光发射边缘上，从而能够提高激光器的寿命特性。用具有比激光芯片的振荡波长短的波长的能量束照射安装有激光芯片的基座。由能量束引起的光解和氧化导致从整个基底中去除附着物或其劣化，附带地，粘合剂衍生自用于将激光芯片附着到基底的粘合片等。优选地，例如使用激光或紫外线作为能量束。或者，可以用等离子体照射安装有激光芯片的基座，以便利用等离子体的离子清洁效果去除粘附剂。照射后，将顶部安装在基座上，以从外部切断激光芯片。

27. 发明授权

US07561606B2 Semiconductor laser, method of mounting semiconductor laser, semiconductor laser mounted structure, and optical disk system 有权
标题翻译：半导体激光器，半导体激光器的安装方法，半导体激光安装结构以及光盘系统
公开(公告)号：US07561606B2
公开(公告)日：2009-07-14
申请号：US11264538
申请日：2005-10-31
申请人： Manabu Taniguchi , Motonobu Takeya , Tsuyoshi Fujimoto , Masao Ikeda , Toshihiro Hashidu
发明人： Manabu Taniguchi , Motonobu Takeya , Tsuyoshi Fujimoto , Masao Ikeda , Toshihiro Hashidu
IPC分类号： H01S3/04
CPC分类号： H01S5/2231 , B82Y20/00 , G11B7/127 , H01L24/05 , H01L2224/04042 , H01L2224/05644 , H01L2224/48091 , H01L2224/85444 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01S5/0224 , H01S5/02248 , H01S5/02272 , H01S5/0425 , H01S5/06226 , H01S5/2214 , H01S5/34333 , H01L2224/45099 , H01L2924/00
摘要： An upper portion of a second clad layer and a contact layer are provided with grooves so as to form a ridge therebetween. An electrode is formed on the ridge. An insulation film is formed to extent on side surfaces of the ridge, on the inside of the grooves, and those portions of the contact layer which are located on the outside of the grooves. The thickness of those portions of the insulation film which are located on the contact layer in the areas on the outside of the grooves is set to be greater than at least the thickness of the electrode. Besides, a pad electrode is formed to cover the electrode and to extend on the insulation film on the upper side of the areas on the outside of the grooves. The upper surfaces of those portions of the pad electrode which are located on the upper side of the areas on the outside of the grooves are set to be above the upper surface of that portion of the pad electrode which is located on the upper side of the ridge.
摘要翻译：第二覆盖层和接触层的上部设置有沟槽，以在其间形成脊。在脊上形成电极。在槽的侧面，槽的内侧和接触层的位于槽的外侧的部分形成绝缘膜。位于槽的外侧区域中的接触层上的绝缘膜的那些部分的厚度被设定为大于至少电极的厚度。此外，形成焊盘电极以覆盖电极并且在槽的外侧上的区域的上侧上的绝缘膜上延伸。位于槽的外侧的区域的上侧的焊盘电极的那些部分的上表面被设定在位于焊盘电极的上侧的焊盘电极的该部分的上表面的上方岭。

28. 发明授权

US06797595B2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device 失效
标题翻译：氮化物半导体层的热处理方法及半导体装置的制造方法
公开(公告)号：US06797595B2
公开(公告)日：2004-09-28
申请号：US10350190
申请日：2003-01-24
申请人： Motonobu Takeya
发明人： Motonobu Takeya
IPC分类号： H01L21265
CPC分类号： B82Y20/00 , H01L21/3245 , H01L33/0095 , H01L33/325 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
摘要翻译：一种热处理氮化物半导体层的方法，包括在至少200℃但小于400℃的温度下加热掺杂有p型杂质的氮化物半导体层至少100分钟。

29. 发明授权

US06861340B2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device 失效
标题翻译：氮化物半导体层的热处理方法及半导体装置的制造方法
公开(公告)号：US06861340B2
公开(公告)日：2005-03-01
申请号：US10326072
申请日：2002-12-23
申请人： Motonobu Takeya
发明人： Motonobu Takeya
IPC分类号： C23C16/34 , H01L21/26 , H01L21/268 , H01L21/324 , H01L21/331 , H01L29/205 , H01L29/73 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/323 , H01S5/343 , H01L21/265 , H01L21/425 , H01L21/21
CPC分类号： B82Y20/00 , H01L21/3245 , H01L33/0095 , H01L33/325 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
摘要翻译：一种热处理氮化物半导体层的方法，包括在至少200℃但小于400℃的温度下加热掺杂有p型杂质的氮化物半导体层至少100分钟。

30. 发明授权

US06524882B2 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same 失效
标题翻译：制造p型氮化物的III-V族化合物半导体的方法及使用其制造半导体器件的方法
公开(公告)号：US06524882B2
公开(公告)日：2003-02-25
申请号：US09824238
申请日：2001-04-03
申请人： Motonobu Takeya , Satoshi Taniguchi
发明人： Motonobu Takeya , Satoshi Taniguchi
IPC分类号： H01L2100
CPC分类号： C30B33/00 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/3228 , Y10S438/933
摘要： A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.
摘要翻译：在由蓝宝石制成的基板上形成掺杂有p型杂质的氮化物III-V族化合物半导体。然后将衬底放置在一对RF电极之间，并且在RF电极之间施加射频场。通过该操作，存在于化合物半导体中的电子侵蚀p型杂质与氢之间的键合，从而切断接合。由此解离的氢原子从化合物半导体释放，从而活化p型杂质。在这种情况下，不需要通过加热器等来加热化合物半导体。

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