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21. 发明申请

US20050023539A1 Semiconductor light-emitting device 有权
公开(公告)号：US20050023539A1
公开(公告)日：2005-02-03
申请号：US10900281
申请日：2004-07-28
申请人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
发明人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
IPC分类号： B41J2/45 , H01L29/06 , H01L33/00 , H01L33/08 , H01L33/30 , H01L33/58 , H01S5/10 , H01S5/183
CPC分类号： H01L33/465 , B41J2/45 , H01L33/405
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting thin film, the thickness h of which satisfies the following conditional equation: 0.9 × ( 2 ⁢ m + 1 ) ⁢ λ 0 4 ⁢ n ≦ h ≦ 1.1 × ( 2 ⁢ m + 1 ) ⁢ λ 0 4 ⁢ n and m in the conditional equation satisfies the following conditional equation: 2 ⁢ m + 1 m ⁡ ( m + 1 ) ⁢ λ 0 2 > ξ where λ0 is a center wavelength of light generated in the semiconductor light-emitting thin film, n is a refractive index of the semiconductor light-emitting thin film, m is 0 or a positive integer, and ξ is a half bandwidth of a light emission spectrum when there is no interference between light rays generated in the semiconductor light-emitting thin film.

22. 发明授权

US06563138B2 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
标题翻译：低成本，高密度发光二极管阵列及其制造方法
公开(公告)号：US06563138B2
公开(公告)日：2003-05-13
申请号：US09750299
申请日：2000-12-29
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.
摘要翻译：在具有半导体材料的上层和绝缘或半绝缘材料的下层的基板上形成发光二极管阵列。上层通过完全穿过上层的隔离通道分成块。通过将杂质选择性地扩散到上层中而形成的发光二极管以单列排列，在上层的每个块中至少有两个发光二极管。每个块具有驱动块中的发光二极管的块电极。这排发光二极管与穿过隔离通道的多条共用线并联。每个共享线路连接到不同块中的多个发光二极管。

23. 发明授权

US06222208B1 Light-emitting diode and light-emitting diode array 失效
标题翻译：发光二极管和发光二极管阵列
公开(公告)号：US06222208B1
公开(公告)日：2001-04-24
申请号：US09089093
申请日：1998-06-02
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L27/153 , H01L33/025 , H01L33/24
摘要： A light-emitting diode includes a first semiconductor epitaxial layer of a first conduction type, a second semiconductor epitaxial layer of the first conduction type laminated upon the first semiconductor epitaxial layer and having an energy band gap greater than that of the first semiconductor epitaxial layer, and an area of impurities formed within the first semiconductor epitaxial layer and the second semiconductor epitaxial layer by doping impurity of a second conduction type from the side of the second semiconductor epitaxial layer. A front of the diode is located within the first semiconductor epitaxial layer.
摘要翻译：发光二极管包括第一导电类型的第一半导体外延层，第一导电类型的第二半导体外延层，层压在第一半导体外延层上并具有大于第一半导体外延层的能带隙的能带隙，以及通过从第二半导体外延层的侧面掺杂第二导电类型的杂质而形成在第一半导体外延层和第二半导体外延层内的杂质区域。二极管的前部位于第一半导体外延层内。

24. 发明授权

US06190935B1 Low-cost, high-density light-emitting-diode array and fabrication method thereof 有权
公开(公告)号：US06190935B1
公开(公告)日：2001-02-20
申请号：US09359789
申请日：1999-07-26
申请人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Kazuo Tokura , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L27/153
摘要： A light-emitting-diode array is formed on a substrate having an upper layer of a semiconducting material and a lower layer of an insulating or semi-insulating material. The upper layer is divided into blocks by isolation channels that cut completely through the upper layer. The light-emitting diodes, which are formed by selective diffusion of an impurity into the upper layer, are arranged in a single row, with at least two light-emitting diodes in each block of the upper layer. Each block has a block electrode that drives the light-emitting diodes in the block. The row of light-emitting diodes is paralleled by a number of shared lines which cross the isolation channels. Each shared line is coupled to a plurality of light-emitting diodes in different blocks.

25. 发明授权

US06180961B2 Light emitting semiconductor device with stacked structure 失效
标题翻译：具有层叠结构的发光半导体器件
公开(公告)号：US06180961B2
公开(公告)日：2001-01-30
申请号：US09093609
申请日：1998-06-09
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Takatoku Shimizu
IPC分类号： H01L3300
CPC分类号： H01L33/025 , H01L27/153 , H01L33/24
摘要： A high-density semiconductor device and semiconductor device array exhibiting high light emission efficiency which can be mass-produced at low cost with high yield is provided. An LED array comprises a structure wherein an n-type GaAs buffer layer 102 is formed on an n-type GaAs substrate 101, on which are then stacked an n-type AlzGa1−zAs layer 103, an n-type AlyGa1−yAs layer 104, a semi-insulating AlxGa1−xAs layer 105, and a semi-insulating GaAs layer 106. The energy band gaps of the AlzGa1−zAs layer 103 and AlxGa1−xAs layer 105 are at least larger than the energy band gap of the AlyGa1−yAs layer 104. A pn junction is formed by selective diffusion, having a diffusion front in the semiconductor layer having the smaller energy band gap sandwiched between the semiconductor layers having the larger energy band gaps. The outermost layer forming ohmic contact is made a p-type GaAs region formed by zinc diffusion in a semi-insulating GaAs layer.
摘要翻译：提供了一种可以以低成本，高产率批量生产的高发光效率的高密度半导体器件和半导体器件阵列。 LED阵列包括其中n型GaAs缓冲层102形成在n型GaAs衬底101上的结构，然后将n型GaAs缓冲层102层叠在n型AlzGa1-zAs层103，n型AllyGa1-yAs层104 ，半绝缘Al x Ga 1-x As层105和半绝缘GaAs层106.AlzGa1-zAs层103和AlxGa1-xAs层105的能带隙至少大于Al y Ga 1-x As层105的能带隙。通过选择性扩散形成pn结，在半导体层中具有在具有较大能带间隙的半导体层之间具有较小能带隙的扩散前沿。形成欧姆接触的最外层是在半绝缘GaAs层中通过锌扩散形成的p型GaAs区。

26. 发明授权

US6136627A High-resolution light-sensing and light-emitting diode array and fabrication method thereof 有权
标题翻译：高分辨率光感应和发光二极管阵列及其制造方法
公开(公告)号：US6136627A
公开(公告)日：2000-10-24
申请号：US137073
申请日：1998-08-20
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0224 , H01L31/10 , H01L31/12 , H01L33/00 , H01L21/225
CPC分类号： H01L31/022408 , H01L27/1446 , H01L27/14601 , H01L27/14643 , H01L27/14683 , H01L27/153 , H01L31/125 , H01L33/0008 , H01L27/156
摘要： A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 .mu.m but not more than 2 .mu.m in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or sensing light, and a wider second region, used for electrode contact. The second regions are located on alternate sides of the array line, permitting a small array pitch to be combined with a large contact area. In a wafer process for fabrication of the chips, a diffusion mask has both windows defining the impurity diffusion regions, and dicing line marks. The dicing line marks are narrowed where they pass adjacent to the windows at the ends of the chip. In the electrode fabrication step, a photomask with an enlarged pattern is used, to allow for misalignment with the diffusion mask.
摘要翻译：光敏/发光二极管阵列芯片在半导体衬底中具有深度至少为0.5μm但不大于2μm的杂质扩散区域。每个杂质扩散区优选分为用于发射或感测光的第一区域和用于电极接触的较宽的第二区域。第二区域位于阵列线的另一侧，允许小的阵列间距与大的接触面积组合。在用于制造芯片的晶片工艺中，扩散掩模具有限定杂质扩散区域的两个窗口和切割线标记。切割线标记在其靠近芯片端部的窗口的地方变窄。在电极制造步骤中，使用具有放大图案的光掩模，以允许与扩散掩模的未对准。

27. 发明授权

US6054724A Light-emitting diode, light-emitting diode array 失效
标题翻译：发光二极管，发光二极管阵列
公开(公告)号：US6054724A
公开(公告)日：2000-04-25
申请号：US923816
申请日：1997-09-04
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Masumi Taninaka , Hiroshi Hamano
IPC分类号： H01L27/15 , H01L33/00 , H01L33/30 , H01L33/34
CPC分类号： H01L27/153 , H01L33/0008
摘要： A compound semiconductor layer of a first conductivity type is formed on a substrate, and a diffusion region of a second conductivity type is formed on the compound semiconductor layer. The light-emitting diode has a high emitted light power, using a large-diameter wafer.
摘要翻译：在衬底上形成第一导电类型的化合物半导体层，并且在化合物半导体层上形成第二导电类型的扩散区域。发光二极管使用大直径晶片具有高发射光功率。

28. 发明授权

US5530268A Light-emitting diode array with anti-reflection coating providing reduced internal reflection 失效
标题翻译：具有抗反射涂层的发光二极管阵列提供减少的内部反射
公开(公告)号：US5530268A
公开(公告)日：1996-06-25
申请号：US326499
申请日：1994-10-20
申请人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
发明人： Mitsuhiko Ogihara , Yukio Nakamura , Takatoku Shimizu , Masumi Taninaka
IPC分类号： H01L27/15 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/40 , H01L33/44 , H01L33/00
CPC分类号： H01L33/44 , H01L27/153
摘要： An LED array is fabricated by forming an insulating film on a semiconductor substrate of a first conductive type, forming a plurality of windows in the insulating film, and diffusing an impurity of a second conductive type through these windows to create a plurality of diffusion regions. In addition, an anti-reflection coating consisting of one or more transparent dielectric thin films is formed on the diffusion regions where they are exposed in the windows. The thickness of the anti-reflection coating, or of its constituent thin films, is optimized for maximum transmission of light.
摘要翻译：通过在第一导电类型的半导体衬底上形成绝缘膜，在绝缘膜中形成多个窗口并且通过这些窗口扩散第二导电类型的杂质以形成多个扩散区域来制造LED阵列。此外，在由窗口露出的扩散区域上形成由一个或多个透明电介质薄膜组成的防反射涂层。抗反射涂层或其组成薄膜的厚度被优化用于光的最大透射。

29. 发明授权

US09093562B2 Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head 有权
标题翻译：半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
公开(公告)号：US09093562B2
公开(公告)日：2015-07-28
申请号：US12926743
申请日：2010-12-07
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , B41J2/45 , H01L27/15
CPC分类号： H01L24/83 , B41J2/45 , H01L24/29 , H01L24/32 , H01L27/153 , H01L2224/27444 , H01L2224/2747 , H01L2224/2908 , H01L2224/29082 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29114 , H01L2224/29117 , H01L2224/29139 , H01L2224/29144 , H01L2224/29155 , H01L2224/29164 , H01L2224/32502 , H01L2224/83005 , H01L2224/83011 , H01L2224/83013 , H01L2224/83192 , H01L2224/83203 , H01L2224/8382 , H01L2224/83825 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/00014 , H01L2924/01007 , H01L2924/00
摘要： A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.
摘要翻译：半导体复合装置包括半导体薄膜层和基板。半导体薄膜层和基板通过形成在半导体薄膜层和基板之间的高熔点金属和低熔点金属的合金层彼此接合。该合金的熔点高于低熔点金属。该合金层含有由低熔点金属与所述半导体薄膜层的材料反应产生的产物。

30. 发明授权

US08415680B2 Semiconductor composite apparatus, print head, and image forming apparatus 有权
标题翻译：半导体复合装置，打印头和图像形成装置
公开(公告)号：US08415680B2
公开(公告)日：2013-04-09
申请号：US11385699
申请日：2006-03-22
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masataka Muto , Takahito Suzuki , Tomoki Igari
IPC分类号： H01L31/12
CPC分类号： B41J2/45 , H01L25/167 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014
摘要： A semiconductor composite apparatus, includes a first substrate, a semiconductor thin film layer, active devices, first driving circuits, and second driving circuits. The semiconductor thin film layer is formed on the first substrate and is formed of a first semiconductor material. The active devices are formed in the semiconductor thin film layer. The first driving circuits is formed of a second semiconductor material and performing a first function in which the active devices are driven. The second driving circuits are formed of a third semiconductor material and performing a second function in which the active devices are driven, the second function being different from the first function.
摘要翻译：半导体复合设备包括第一衬底，半导体薄膜层，有源器件，第一驱动电路和第二驱动电路。半导体薄膜层形成在第一基板上并由第一半导体材料形成。有源器件形成在半导体薄膜层中。第一驱动电路由第二半导体材料形成并且执行驱动有源器件的第一功能。第二驱动电路由第三半导体材料形成，并且执行驱动有源器件的第二功能，第二功能不同于第一功能。

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