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21. 发明授权

US09376758B2 Electroplating method 有权
标题翻译：电镀法
公开(公告)号：US09376758B2
公开(公告)日：2016-06-28
申请号：US13311020
申请日：2011-12-05
申请人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
发明人： Shingo Yasuda , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
IPC分类号： C25D5/18 , C25D7/12
CPC分类号： C25D5/18 , C25D7/123
摘要： An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.
摘要翻译：电镀方法可以以自下而上的方式可靠且有效地将电镀金属填充到深高纵横比的通孔中，而不会在电镀金属中产生缺陷。电镀方法包括：在基板的表面上设置阳极，将具有在表面中形成的通孔的基板和阳极浸入电镀槽中的电镀液中; 并以这样的方式间歇地通过基板和阳极之间的恒定电流值的电镀电流，使得电镀电流的供应和停止重复，并且提供电镀电流的电流供应时间的比例随着电镀的进行而增加，从而将电镀金属填充到通孔中。

22. 发明申请

US20120255864A1 ELECTROPLATING METHOD 审中-公开
标题翻译：电镀方法
公开(公告)号：US20120255864A1
公开(公告)日：2012-10-11
申请号：US13439937
申请日：2012-04-05
申请人： Mizuki Nagai , Yusuke Tamari , Shingo Yasuda
发明人： Mizuki Nagai , Yusuke Tamari , Shingo Yasuda
IPC分类号： C25D5/34
CPC分类号： C25D5/34 , C23C18/1653 , C23C18/54 , C25D3/38 , C25D5/40
摘要： An electroplating method is capable of reliably embedding via holes with a plated metal such as copper or the like when a substrate with a seed layer of a metal having a greater ionization tendency than hydrogen is electroplated using an acidic plating solution such as a copper sulfate plating solution. The electroplating method including preparing a substrate having via holes covered with a first metal, which has a greater ionization tendency than hydrogen, in a surface thereof, pretreating the substrate by immersing the substrate in a pretreatment solution in which a second metal that is more noble than the first metal or a salt thereof is dissolved, and then electroplating the surface of the substrate to embed the second metal or a third metal in the via holes.
摘要翻译：当使用具有比氢的电离倾向大的金属种子层的基板使用诸如硫酸铜电镀的酸性电镀液电镀时，电镀方法能够可靠地嵌入具有诸如铜等的电镀金属的通孔解。该电镀方法包括在其表面制备具有覆盖有比氢更大的离子化趋势的第一金属的通孔的基板，通过将基板浸入其中更高贵的第二金属的预处理溶液中来预处理基板溶解第一金属或其盐，然后电镀基板的表面以将第二金属或第三金属嵌入通孔中。

23. 发明申请

US20090139870A1 Plating apparatus and plating method 有权
标题翻译：电镀装置及电镀方法
公开(公告)号：US20090139870A1
公开(公告)日：2009-06-04
申请号：US12314080
申请日：2008-12-03
申请人： Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
发明人： Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
IPC分类号： C25D5/02 , C25D17/00
CPC分类号： H01L21/76847 , C23C14/046 , C23C14/16 , C23C14/584 , C25D5/003 , C25D5/022 , C25D5/08 , C25D5/10 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/2885 , H01L21/76849 , H01L21/76879 , H05K3/108 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.
摘要翻译：一种方法可以形成导电结构，其可用于具有通孔塞的三维封装，在更短的时间内缩短常规的长电镀时间，这是阻碍电镀实际使用的障碍。该方法包括在具有形成在表面中的通孔的基板的整个表面上形成导电膜，包括通孔的内表面; 在导电膜上的预定位置处形成抗蚀剂图案; 在第一电镀条件下进行第一次电镀，使用导电膜作为供电层，从而将第一镀膜填充到通孔中; 并且在第二电镀条件下进行第二次电镀，使用导电膜和第一镀膜作为供电层，从而允许第二镀膜在导电膜和第一镀膜上生长，两者都暴露在抗蚀图案

24. 发明授权

US06793794B2 Substrate plating apparatus and method 有权
标题翻译：基板电镀装置及方法
公开(公告)号：US06793794B2
公开(公告)日：2004-09-21
申请号：US10098415
申请日：2002-03-18
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D500
CPC分类号： C25D21/14 , C25D7/12 , C25D17/001
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

25. 发明授权

US08784636B2 Plating apparatus and plating method 有权
标题翻译：电镀装置及电镀方法
公开(公告)号：US08784636B2
公开(公告)日：2014-07-22
申请号：US12314080
申请日：2008-12-03
申请人： Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
发明人： Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
IPC分类号： C25D7/12 , C25D5/10 , C25D5/08 , C25D21/10 , C25D5/00
CPC分类号： H01L21/76847 , C23C14/046 , C23C14/16 , C23C14/584 , C25D5/003 , C25D5/022 , C25D5/08 , C25D5/10 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/2885 , H01L21/76849 , H01L21/76879 , H05K3/108 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要： A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.
摘要翻译：一种方法可以形成导电结构，其可用于具有通孔塞的三维封装，在更短的时间内缩短常规的长电镀时间，这是阻碍电镀实际使用的障碍。该方法包括在具有形成在表面中的通孔的基板的整个表面上形成导电膜，包括通孔的内表面; 在导电膜上的预定位置处形成抗蚀剂图案; 在第一电镀条件下进行第一次电镀，使用导电膜作为供电层，从而将第一镀膜填充到通孔中; 并且在第二电镀条件下进行第二次电镀，使用导电膜和第一镀膜作为供电层，从而允许第二镀膜在导电膜和第一镀膜上生长，两者都暴露在抗蚀图案

26. 发明申请

US20120152749A1 ELECTROPLATING METHOD 有权
标题翻译：电镀方法
公开(公告)号：US20120152749A1
公开(公告)日：2012-06-21
申请号：US13311020
申请日：2011-12-05
申请人： Shingo YASUDA , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
发明人： Shingo YASUDA , Fumio Kuriyama , Masashi Shimoyama , Mizuki Nagai , Yusuke Tamari
IPC分类号： C25D5/02 , C25D5/00
CPC分类号： C25D5/18 , C25D7/123
摘要： An electroplating method can securely and efficiently fill a plated metal into deep high-aspect ratio vias in a bottom-up manner without producing defects in the plated metal. The electroplating method includes: immersing a substrate, having vias formed in a surface, and an anode in a plating solution in a plating tank, the anode being disposed opposite the surface of the substrate; and intermittently passing a plating current at a constant current value between the substrate and the anode in such a manner that the supply and the stop of the plating current are repeated, and that the proportion of a current supply time during which the plating current is supplied increases with the progress of plating, thereby filling a plated metal into the vias.
摘要翻译：电镀方法可以以自下而上的方式可靠且有效地将电镀金属填充到深高纵横比的通孔中，而不会在电镀金属中产生缺陷。电镀方法包括：在基板的表面上设置阳极，将具有在表面中形成的通孔的基板和阳极浸入电镀槽中的电镀液中; 并以这样的方式间歇地通过基板和阳极之间的恒定电流值的电镀电流，使得电镀电流的供应和停止重复，并且提供电镀电流的电流供应时间的比例随着电镀的进行而增加，从而将电镀金属填充到通孔中。

27. 发明授权

US06365017B1 Substrate plating device 有权
标题翻译：基板电镀装置
公开(公告)号：US06365017B1
公开(公告)日：2002-04-02
申请号：US09530805
申请日：2000-05-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D1700
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

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